JPS58157A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS58157A
JPS58157A JP56098557A JP9855781A JPS58157A JP S58157 A JPS58157 A JP S58157A JP 56098557 A JP56098557 A JP 56098557A JP 9855781 A JP9855781 A JP 9855781A JP S58157 A JPS58157 A JP S58157A
Authority
JP
Japan
Prior art keywords
fuse
wiring
molybdenum
semiconductor device
cutting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56098557A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0328069B2 (enExample
Inventor
Hajime Kamioka
上岡　元
Seiichiro Kawamura
河村　誠一郎
Yoshihiko Higa
比嘉　良彦
Takashi Mitsuida
高 三井田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56098557A priority Critical patent/JPS58157A/ja
Publication of JPS58157A publication Critical patent/JPS58157A/ja
Publication of JPH0328069B2 publication Critical patent/JPH0328069B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment

Landscapes

  • Design And Manufacture Of Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP56098557A 1981-06-25 1981-06-25 半導体装置 Granted JPS58157A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56098557A JPS58157A (ja) 1981-06-25 1981-06-25 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56098557A JPS58157A (ja) 1981-06-25 1981-06-25 半導体装置

Publications (2)

Publication Number Publication Date
JPS58157A true JPS58157A (ja) 1983-01-05
JPH0328069B2 JPH0328069B2 (enExample) 1991-04-17

Family

ID=14222986

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56098557A Granted JPS58157A (ja) 1981-06-25 1981-06-25 半導体装置

Country Status (1)

Country Link
JP (1) JPS58157A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63160268A (ja) * 1986-12-05 1988-07-04 テキサス　インスツルメンツ　インコーポレイテツド 金属ヒューズリンクを用いた書込み可能なｍｏｓメモリ及びその製造方法
US4826785A (en) * 1987-01-27 1989-05-02 Inmos Corporation Metallic fuse with optically absorptive layer
US4875971A (en) * 1987-04-05 1989-10-24 Elron Electronic Industries, Ltd. Fabrication of customized integrated circuits
US4924287A (en) * 1985-01-20 1990-05-08 Avner Pdahtzur Personalizable CMOS gate array device and technique
JP2012178587A (ja) * 2005-08-31 2012-09-13 Internatl Business Mach Corp <Ibm> ランダム・アクセス電気的プログラム可能なｅヒューズｒｏｍ

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57139958A (en) * 1981-02-23 1982-08-30 Seiko Instr & Electronics Ltd Fuse type non-volatile memory

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57139958A (en) * 1981-02-23 1982-08-30 Seiko Instr & Electronics Ltd Fuse type non-volatile memory

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4924287A (en) * 1985-01-20 1990-05-08 Avner Pdahtzur Personalizable CMOS gate array device and technique
JPS63160268A (ja) * 1986-12-05 1988-07-04 テキサス　インスツルメンツ　インコーポレイテツド 金属ヒューズリンクを用いた書込み可能なｍｏｓメモリ及びその製造方法
US4826785A (en) * 1987-01-27 1989-05-02 Inmos Corporation Metallic fuse with optically absorptive layer
US4875971A (en) * 1987-04-05 1989-10-24 Elron Electronic Industries, Ltd. Fabrication of customized integrated circuits
JP2012178587A (ja) * 2005-08-31 2012-09-13 Internatl Business Mach Corp <Ibm> ランダム・アクセス電気的プログラム可能なｅヒューズｒｏｍ

Also Published As

Publication number Publication date
JPH0328069B2 (enExample) 1991-04-17

Similar Documents

Publication Publication Date Title
EP0327535B1 (en) Thin film platinum resistance thermometer with high temperature diffusion barrier
JPS63160268A (ja) 金属ヒューズリンクを用いた書込み可能なｍｏｓメモリ及びその製造方法
WO1990003650A1 (en) Metallization systems for heater/sensor elements
US4459321A (en) Process for applying closely overlapped mutually protective barrier films
US4916397A (en) Semiconductor device with bonding pad
DE1648241C3 (de) Maximumthermometer für Oberflächentemperaturen
JPH0328069B2 (enExample)
JPS62113421A (ja) 半導体装置の製造方法
Magee et al. Investigation of solid–solid reactions of Au films on silicon
JPH0332229B2 (enExample)
JPS6030110B2 (ja) 半導体装置およびその製造方法
JPS57167669A (en) Capacitor and manufacture thereof
JPH0472764A (ja) 半導体装置の裏面電極
JPS5863165A (ja) 多層電極構造を有した半導体装置
JPS6321871A (ja) 半導体装置
JPS59150430A (ja) 半導体デバイス
JPS59131B2 (ja) 半導体装置
JPS6221283A (ja) 超伝導集積回路
JPH0463148B2 (enExample)
US3787233A (en) METHOD OF GROWING MOBILE POSITIVE ION FREE SiO{11 {11 FILMS
JPS60186038A (ja) 半導体装置
Bali et al. Laser light induced oxidation of tantalum in air
JP2790825B2 (ja) 熱式空気流量計の発熱抵抗体製造方法およびその発熱抵抗体
Goikhman The Effectiveness of Diffusion Coatings of Noble Metals in Improving Oxidation Resistance
JPS6331158A (ja) 半導体メモリ装置