JPS58153412A - 圧電薄膜複合振動子 - Google Patents
圧電薄膜複合振動子Info
- Publication number
- JPS58153412A JPS58153412A JP3616682A JP3616682A JPS58153412A JP S58153412 A JPS58153412 A JP S58153412A JP 3616682 A JP3616682 A JP 3616682A JP 3616682 A JP3616682 A JP 3616682A JP S58153412 A JPS58153412 A JP S58153412A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film
- substrate
- zno
- vibrator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 30
- 239000002131 composite material Substances 0.000 title claims abstract description 7
- 239000010408 film Substances 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 8
- 239000010703 silicon Substances 0.000 claims abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 6
- 238000004544 sputter deposition Methods 0.000 abstract description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052796 boron Inorganic materials 0.000 abstract description 4
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 239000002305 electric material Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 5
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3616682A JPS58153412A (ja) | 1982-03-08 | 1982-03-08 | 圧電薄膜複合振動子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3616682A JPS58153412A (ja) | 1982-03-08 | 1982-03-08 | 圧電薄膜複合振動子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58153412A true JPS58153412A (ja) | 1983-09-12 |
| JPS6357966B2 JPS6357966B2 (enrdf_load_stackoverflow) | 1988-11-14 |
Family
ID=12462169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3616682A Granted JPS58153412A (ja) | 1982-03-08 | 1982-03-08 | 圧電薄膜複合振動子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58153412A (enrdf_load_stackoverflow) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4719383A (en) * | 1985-05-20 | 1988-01-12 | The United States Of America As Represented By The United States Department Of Energy | Piezoelectric shear wave resonator and method of making same |
| US5162691A (en) * | 1991-01-22 | 1992-11-10 | The United States Of America As Represented By The Secretary Of The Army | Cantilevered air-gap type thin film piezoelectric resonator |
| US5233259A (en) * | 1991-02-19 | 1993-08-03 | Westinghouse Electric Corp. | Lateral field FBAR |
| US5852337A (en) * | 1996-05-27 | 1998-12-22 | Ngk Insulators, Ltd. | Piezoelectric film-type element |
| US6842088B2 (en) | 2001-05-11 | 2005-01-11 | Ube Industries, Ltd. | Thin film acoustic resonator and method of producing the same |
| US6885262B2 (en) | 2002-11-05 | 2005-04-26 | Ube Industries, Ltd. | Band-pass filter using film bulk acoustic resonator |
| WO2005060091A1 (ja) | 2003-12-19 | 2005-06-30 | Ube Industries, Ltd. | 圧電薄膜デバイスの製造方法および圧電薄膜デバイス |
| US6936837B2 (en) | 2001-05-11 | 2005-08-30 | Ube Industries, Ltd. | Film bulk acoustic resonator |
| US6989723B2 (en) | 2002-12-11 | 2006-01-24 | Tdk Corporation | Piezoelectric resonant filter and duplexer |
| US7124485B2 (en) | 2003-04-11 | 2006-10-24 | Tdk Corporation | Method of manufacturing a piezoelectric thin film resonator |
| US7239067B2 (en) | 2003-03-31 | 2007-07-03 | Tdk Corporation | Method of manufacturing a piezoelectric thin film resonator, manufacturing apparatus for a piezoelectric thin film resonator, piezoelectric thin film resonator, and electronic component |
| US7388318B2 (en) | 2002-06-20 | 2008-06-17 | Ube Industries, Ltd. | Thin film piezoelectric resonator, thin film piezoelectric device, and manufacturing method thereof |
| JP2013506334A (ja) * | 2009-09-28 | 2013-02-21 | テクノロギアン トゥトキムスケスクス ヴェーテーテー | マイクロメカニカル共振器 |
-
1982
- 1982-03-08 JP JP3616682A patent/JPS58153412A/ja active Granted
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4719383A (en) * | 1985-05-20 | 1988-01-12 | The United States Of America As Represented By The United States Department Of Energy | Piezoelectric shear wave resonator and method of making same |
| US5162691A (en) * | 1991-01-22 | 1992-11-10 | The United States Of America As Represented By The Secretary Of The Army | Cantilevered air-gap type thin film piezoelectric resonator |
| US5233259A (en) * | 1991-02-19 | 1993-08-03 | Westinghouse Electric Corp. | Lateral field FBAR |
| US5852337A (en) * | 1996-05-27 | 1998-12-22 | Ngk Insulators, Ltd. | Piezoelectric film-type element |
| US6842088B2 (en) | 2001-05-11 | 2005-01-11 | Ube Industries, Ltd. | Thin film acoustic resonator and method of producing the same |
| US6936837B2 (en) | 2001-05-11 | 2005-08-30 | Ube Industries, Ltd. | Film bulk acoustic resonator |
| US7140084B2 (en) | 2001-05-11 | 2006-11-28 | Ube Industries, Ltd. | Method of producing thin film bulk acoustic resonator |
| US7388318B2 (en) | 2002-06-20 | 2008-06-17 | Ube Industries, Ltd. | Thin film piezoelectric resonator, thin film piezoelectric device, and manufacturing method thereof |
| US6885262B2 (en) | 2002-11-05 | 2005-04-26 | Ube Industries, Ltd. | Band-pass filter using film bulk acoustic resonator |
| US6989723B2 (en) | 2002-12-11 | 2006-01-24 | Tdk Corporation | Piezoelectric resonant filter and duplexer |
| US7239067B2 (en) | 2003-03-31 | 2007-07-03 | Tdk Corporation | Method of manufacturing a piezoelectric thin film resonator, manufacturing apparatus for a piezoelectric thin film resonator, piezoelectric thin film resonator, and electronic component |
| US7124485B2 (en) | 2003-04-11 | 2006-10-24 | Tdk Corporation | Method of manufacturing a piezoelectric thin film resonator |
| US7212082B2 (en) | 2003-12-19 | 2007-05-01 | Ube Industries, Ltd. | Method of manufacturing piezoelectric thin film device and piezoelectric thin film device |
| WO2005060091A1 (ja) | 2003-12-19 | 2005-06-30 | Ube Industries, Ltd. | 圧電薄膜デバイスの製造方法および圧電薄膜デバイス |
| JP2013506334A (ja) * | 2009-09-28 | 2013-02-21 | テクノロギアン トゥトキムスケスクス ヴェーテーテー | マイクロメカニカル共振器 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6357966B2 (enrdf_load_stackoverflow) | 1988-11-14 |
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