JPS58153302A - Method of producing voltage nonlinear resistor - Google Patents

Method of producing voltage nonlinear resistor

Info

Publication number
JPS58153302A
JPS58153302A JP57035862A JP3586282A JPS58153302A JP S58153302 A JPS58153302 A JP S58153302A JP 57035862 A JP57035862 A JP 57035862A JP 3586282 A JP3586282 A JP 3586282A JP S58153302 A JPS58153302 A JP S58153302A
Authority
JP
Japan
Prior art keywords
oxide
antimony
nonlinear resistor
resistor
diffraction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57035862A
Other languages
Japanese (ja)
Other versions
JPH0131682B2 (en
Inventor
加藤 好朗
大熊 英夫
桜井 善治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP57035862A priority Critical patent/JPS58153302A/en
Publication of JPS58153302A publication Critical patent/JPS58153302A/en
Publication of JPH0131682B2 publication Critical patent/JPH0131682B2/ja
Granted legal-status Critical Current

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  • Thermistors And Varistors (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は酸化亜鉛あるいは酸化亜鉛と酸化マグネシウム
を主成分とし、焼結体自体が非直線抵抗特性をもつ非直
線抵抗体の製造方法に関する−のである。
[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to a method for manufacturing a non-linear resistor whose main components are zinc oxide or zinc oxide and magnesium oxide, and whose sintered body itself has non-linear resistance characteristics. be.

〔発明の技術的背景と問題点〕[Technical background and problems of the invention]

非直線抵抗体は一般にはバリスタと呼ばれ、その優れた
非直線電圧−電流特性が利用されて電圧安定化、あるい
はサージ吸収を目的とした避雷器やサージアブソーバに
広く利用されでいる。代表的なものとして、近年開発さ
れた酸化亜鉛バリスタがある。これは酸化亜鉛あるいは
酸化亜鉛と酸化マグネシウムを主成分とし、これに少量
のビスマス、アンチモン、コバルト、マンガン、クロム
等の酸化物を添加し、混合造粒、成形した後、空気中で
高温焼成し、その焼結体に電極を取〕付けて構成される
ものである。その非直線抵抗特性は非常に優れておル、
焼結体は酸化亜鉛粒子とその周囲を取シま〈添加物によ
p形成される粒界層からなり、優れた非直線抵抗特性は
酸化亜鉛粒子と粒界層との界面に起因すると考えられて
いる。
A nonlinear resistor is generally called a varistor, and its excellent nonlinear voltage-current characteristics are utilized to make it widely used in lightning arresters and surge absorbers for the purpose of voltage stabilization or surge absorption. A typical example is the recently developed zinc oxide varistor. It is mainly composed of zinc oxide or zinc oxide and magnesium oxide, to which small amounts of oxides such as bismuth, antimony, cobalt, manganese, and chromium are added, mixed, granulated, molded, and then fired at high temperature in air. It is constructed by attaching electrodes to the sintered body. Its non-linear resistance characteristics are very good.
The sintered body consists of zinc oxide particles and a grain boundary layer formed around them by additives, and the excellent nonlinear resistance characteristics are thought to be due to the interface between the zinc oxide particles and the grain boundary layer. It is being

しかしながら、これらの非直線抵抗体を工業的に量産製
造すると非直線抵抗特性の低下やその特性上のバラツキ
ばか夛でなく、課電寿命、放電耐電等の他の性能低下を
もが発生するという問題点があった。
However, when these nonlinear resistors are industrially mass-produced, they not only cause a decrease in nonlinear resistance characteristics and variations in their characteristics, but also other performance decreases such as energized life and discharge durability. There was a problem.

その原因は、主成分である酸化亜鉛あるいは酸化亜鉛と
酸化マグネシウムに添加され、粒界ノーを形成スるビス
マス、アンチモン、コバルト、マンガン、クロム等の酸
化物の量が極めて少量であることである。(添加物全体
でも10%以下、各成分によっては0,5−以下)した
がって主成分と添加物の混合方法が重要である事は勿論
であるが、一方反応機構上からは、出発原料の物性バラ
ツキ、特に粒界中のスピネル層形成((ZnMg)、 
8b、O□又はZn8b、O・〕 上大きな役割を果た
している酸化アンチモン自体の組成に基づく物性が特に
大きく影響しているものと考えられる。一般に市販され
ている酸化アンチモンは、製法の関係から8b、O,の
結晶形が、第1図に示すX線回折ライン121と222
から推測できる様に斜方晶形と等軸晶形の混在系−t”
アn、又、8b、04ヤ8b禦Os $ 1〜2 %混
入しているのが通常である。
The reason for this is that the amount of oxides such as bismuth, antimony, cobalt, manganese, and chromium, which are added to the main component zinc oxide or zinc oxide and magnesium oxide and form grain boundary holes, is extremely small. . (The total amount of additives is less than 10%, and depending on each component, it is less than 0.5%.) Therefore, it goes without saying that the method of mixing the main components and additives is important, but on the other hand, from the reaction mechanism point of view, the physical properties of the starting materials Variations, especially spinel layer formation in grain boundaries ((ZnMg),
8b, O□ or Zn8b, O.] It is thought that the physical properties based on the composition of antimony oxide itself, which plays a major role, have a particularly large influence. Generally commercially available antimony oxide has a crystal form of 8b, O, due to the manufacturing method, as shown in the X-ray diffraction lines 121 and 222 shown in Figure 1.
As can be inferred from the above, it is a mixed system of orthorhombic and equiaxed crystals.
Usually, 1 to 2% of Anne, 8b, 04 and 8b Os are mixed.

この様に酸化アンチモンの出発原料にsb、o、で結晶
形態が混在しているものヤsb、o、 、 sb、o、
等が混入しているものを使用した場合、混在、混入比率
によって反応機構に微妙な影響をおよぼし、最終的に形
成するスピネル層の安定性、即ち非直線抵抗体の特性安
定性に直結するものと考えられる。
In this way, the starting raw material for antimony oxide contains a mixture of crystal forms of sb, o, sb, o, sb, o,
When using a material that contains substances such as these, the reaction mechanism is subtly affected depending on the mixture and mixing ratio, and this is directly linked to the stability of the spinel layer that is finally formed, that is, the stability of the characteristics of the nonlinear resistor. it is conceivable that.

〔発明の目的〕[Purpose of the invention]

本発明は上記点に艦みなされたもので、出発原料として
の識化アンチモン組成の三酸化アンチモン(8btOs
)純度、結晶形1粒径を規制したものを使用する事によ
って安定した非直線抵抗特性を有する非直線抵抗体の製
造方法を提供することを目的とするものである。
The present invention is based on the above points, and uses antimony trioxide (8btOs) having a composition of antimony as a starting material.
) It is an object of the present invention to provide a method for manufacturing a nonlinear resistor having stable nonlinear resistance characteristics by using a material with controlled purity, crystal shape, and grain size.

〔発明の概要〕[Summary of the invention]

本発明は酸化亜鉛あるいは酸化亜鉛と酸化マグネシウム
を主成分としてこれに少くとも一種類以上の金属酸化物
を添加温合し、この混合物を成形した後焼成する電圧非
直線抵抗体の製造方法において、前記金属酸化物として
の酸化アンチモン組成はa+)三酸化アンチモノの純度
99.0 S以上、b)三酸化アンチモノのX1ll[
回折によって得られる回折ライン121(斜方晶形)と
回折ライン122(等軸晶形)の強度ピーク比(回折ラ
イフ121強度ピーク比/回折ライン122の強度ビー
ク)が0.3以下C)平均粒径0.5#以下であること
をその特徴とする。
The present invention provides a method for manufacturing a voltage nonlinear resistor, which comprises adding and heating at least one metal oxide to zinc oxide or zinc oxide and magnesium oxide as main components, molding the mixture, and then firing it. The composition of antimony oxide as the metal oxide is a+) purity of antimono trioxide of 99.0 S or more, b) X1ll of antimono trioxide [
The intensity peak ratio of diffraction line 121 (orthorhombic form) and diffraction line 122 (equiaxed form) obtained by diffraction (diffraction life 121 intensity peak ratio/intensity peak of diffraction line 122) is 0.3 or lessC) Average particle size Its characteristic is that it is 0.5# or less.

〔発明の実施例〕[Embodiments of the invention]

次に本発明の実施例を図面を参照して説明する。 Next, embodiments of the present invention will be described with reference to the drawings.

ZnOを例えば80モル−と、少なくと4一種類の金属
酸化物、例えばMg014モルチ、B輸o、 2モル%
 、 8b、O,L5モsp−、C001,1モA/ 
% 、cr、o。
For example, 80 mol of ZnO and 2 mol % of at least four metal oxides, such as Mg014mol, B2O,
, 8b, O, L5 mo sp-, C001, 1 mo A/
%, cr, o.

0.54&ルlG1Mn00.5−%ル%、’elol
 o、4 % ル% (D割合で秤量す為。
0.54&lG1Mn00.5-%le%,'elol
o, 4% le% (to weigh in D proportion.

この鳩舎酸化アンチモノは三酸化アンチモンsb、Os
 M駅が99.S係以上、sb、o、の結晶形は第2図
の121回衝ラインが示す様な斜方晶形をほとんど含ま
ない等軸晶形のもの及び平均粒径2−5μのもの使用し
たー 次に秤量した酸化物を例えばボールミルに入れ、脱イオ
ン水を一諸に24時間ボールンルを作動させて、混合す
る〇 混合物を乾燥させ、電気Fに入れて仮焼する。
This pigeon house antimony oxide is antimony trioxide sb, Os
M station is 99. The crystal forms of S, sb, and o were those in the equiaxed crystal form containing almost no orthorhombic crystals, as shown by the 121st stroke line in Figure 2, and those with an average grain size of 2-5μ. The weighed oxide is placed in a ball mill, for example, and mixed with deionized water by operating the ball for 24 hours. The mixture is dried, and then placed in an electric F for calcining.

仮焼温度は例えば900°0で2時間が適当である。The appropriate calcination temperature is, for example, 900° for 2 hours.

仮焼すると酸化物は塊状になるので、粉砕して微粒子に
する。粉砕前の酸化物に例えばポリビニルアルコールを
酸化物に対する重量比で例えば100分の1混合する。
When calcined, the oxide becomes lumpy, so it is crushed into fine particles. For example, polyvinyl alcohol is mixed with the oxide before pulverization in a weight ratio of, for example, 1/100 to the oxide.

微粉砕にはボールミルを用いる。これKよ)微粉砕され
た酸化物とポリビニルアルコールとは実質的に均質に混
合されている。
A ball mill is used for fine grinding. (K) The finely ground oxide and polyvinyl alcohol are substantially homogeneously mixed.

次に酸化物を造粒装置例えばスプレードライヤーに入れ
、粒径が例えば100ないし300キクロンの球状団粒
にする。
Next, the oxide is placed in a granulating device, such as a spray dryer, to form spherical aggregates having a particle size of, for example, 100 to 300 kilometres.

この粉末状混合物をプレスにかけ1例えば直径10Qm
、厚さ25の円板に成形する。
This powdery mixture is pressed to give a diameter of, for example, 10Qm.
, formed into a disk with a thickness of 25 mm.

この成形物を電気炉に入れ焼成する。焼成温度は例えば
1300℃で1時間は6時間が適当である。
This molded product is placed in an electric furnace and fired. The firing temperature is, for example, 1300° C. and 6 hours is suitable for 1 hour.

焼成後の円板状焼成物は焼成前よル収縮するがほぼ均質
な鳳虞、蜜度を有する。
After firing, the disc-shaped fired product shrinks before firing, but has a nearly homogeneous texture and consistency.

次に円板状焼成物の両面を軽く研磨して焼成物を露出さ
せ為、この露出flK例えばアル<ニウムを溶射して、
電極を形成し非直線抵抗体を形成する・ このようにして得られた非直線抵抗体の電気特性を11
3図及び第4図に示す。
Next, both sides of the disc-shaped fired product are lightly polished to expose the fired product, and this exposure flK is thermally sprayed with, for example, aluminum.
Form the electrodes and form the nonlinear resistor.The electrical characteristics of the nonlinear resistor thus obtained are shown in 11.
This is shown in Figures 3 and 4.

第3図は90℃の恒温槽中でV1m人(1mAを非直線
抵抗体に流し丸場合の端子間電圧)の8596を非直線
抵抗体に印加し走時の漏洩電流の変化を示す。
FIG. 3 shows the change in leakage current during running when a voltage of V1m (voltage between terminals when 1 mA is applied to the non-linear resistor) is applied to the non-linear resistor in a constant temperature bath at 90°C.

また114図は101人の電流を100回まで印加した
ときのV、閣ムの値の変化率(ΔV/V、mA)を示す
Further, Figure 114 shows the rate of change (ΔV/V, mA) in the values of V and V when the current was applied up to 100 times by 101 people.

各図にシいて、夷纏ムは従来の非直線抵抗体の特性を、
鎖線農は本実!J1による非直線抵抗体の特性を示す。
In each figure, Yoshimu shows the characteristics of a conventional nonlinear resistor,
Chain line farming is the real deal! The characteristics of the nonlinear resistor according to J1 are shown.

第3図から嘴らかなように本発明による非直線抵抗体は
、I!来の非直線抵抗体く比べて課電電圧に対する漏洩
電流の変化が著しく改善され、換言すれば、寿命**が
#cjLされている。更に、第4図から明らかなように
、本発明による非直線抵抗体は、従来の非直線抵抗体に
比べて、衝撃電流耐量特性をも著しく改善されている。
As is clear from FIG. 3, the nonlinear resistor according to the present invention has I! Compared to conventional non-linear resistors, the change in leakage current with respect to applied voltage is significantly improved, in other words, the life ** is extended to #cjL. Furthermore, as is clear from FIG. 4, the non-linear resistor according to the present invention has significantly improved impact current withstand characteristics as compared to the conventional non-linear resistor.

この様な第3図及び第4図に示す優れた特性が得られる
のは、sb、o、の出発原料の物性を規制する事によっ
て、他の添加物と反応してできる較界中のスピネル層が
安定化して匹るものと思われる。
The excellent properties shown in Figures 3 and 4 can be obtained by controlling the physical properties of the starting materials of sb, o, and the spinel in the range that is produced by reacting with other additives. It seems that the layer is stabilized and equalized.

本発明者らが種々検討した結果特性の安定度はsb、o
、の純度が9量チ以上、X11回折ライン121と22
2の回折強度ピーク比が9−0.3以下及び平均粒径が
5μ以下のものを使用した時良好であることが判明した
。又、微細構造分析によれば、酸化アンチモンの出発原
料物性の差は生成スピンネル層の1量、及び1厚さ、に
有意差を生じ、反応機構の違いの一端を窺うことができ
る。
As a result of various studies conducted by the inventors, the stability of the characteristics is sb, o
, purity of 9% or higher, X11 diffraction lines 121 and 22
It was found that good results were obtained when the diffraction intensity peak ratio of No. 2 was 9-0.3 or less and the average particle size was 5 μm or less. Further, according to microstructural analysis, differences in the physical properties of the starting material of antimony oxide cause significant differences in the amount and thickness of the produced spinel layer, and it is possible to get a glimpse of the difference in the reaction mechanism.

なお、第3図及び第4図に示され九特性上の違いは第5
図で示す様に量童時の管理特性であるV、mA%In(
抵抗分もれ電流)C(静電容量)等の基本特性バラツキ
の大きさくも見られる・第5図の8曲線の様に、管理幅
から例えば3量チ以上外れたものが出現し九場合を10
ツト不良。
In addition, the differences in nine characteristics shown in Figures 3 and 4 are as follows.
As shown in the figure, V, mA%In (
The magnitude of variation in basic characteristics such as resistance leakage current (resistance leakage current) C (capacitance), etc. can also be seen. ・As shown in curve 8 in Figure 5, curves that deviate from the control range by, for example, 3 or more, appear in 9 cases. 10
Tuto is defective.

と判定し九場合、*来の酸化アンチモン出発原料物性を
規制しない時の標準バラツキはDIIII線で代表され
為が、不良の1自線になる危険確率も約10−含んでい
え。
If it is judged as 9, the standard variation when the physical properties of the antimony oxide starting material are not regulated is represented by the DIII line, and it also includes the risk probability of becoming a defective 1-self line.

本発明によれば標準バラツキはC11lllで代表され
、最悪の場合で4DIll線内に収ま〕、不良ロット発
生を蕾−にできることがわかる。
According to the present invention, the standard variation is represented by C11ll, and falls within the 4DIll line in the worst case], and it can be seen that the occurrence of defective lots can be suppressed.

上記実施例で示した材料組成及び、贋造設備一方法は酸
化亜鉛あるいは酸化亜鉛と酸化マグネシウムを主成分と
し、バリスタ特性が得られるものであれば上記実施例に
必ずしも限定されるものではない。
The material composition and counterfeiting equipment method shown in the above embodiments are not necessarily limited to the above embodiments as long as they contain zinc oxide or zinc oxide and magnesium oxide as main components and can provide varistor properties.

〔発明の効果〕〔Effect of the invention〕

以上説明した様に本発明によれば、11!化アンチモノ
の出発原料物性を規制する事によって、特性が安定化し
九非直線抵抗体を提供することができる・
As explained above, according to the present invention, 11! By controlling the physical properties of the starting material of anti-monocarbons, the properties can be stabilized and a non-linear resistor can be provided.

【図面の簡単な説明】[Brief explanation of the drawing]

s1因は従来の酸化アンチ七ン組成のX線回折図で示す
説明図、112図は本発明の一実施例の酸化アンチモン
組成のX線回折図、第3図は本発明の一実施例に係る電
圧非直線抵抗体の峰′鑞時間−漏洩電流の関係を示す特
性図、第4図は衝撃電流耐量特性線図、第5図はバリス
タ特性のバラツキを示す特性図である。 (7317)  代理人 弁理士 則 近 憲 佑 (
ほか1名)第3図 課責 簡閲 (N) 第4図 友L(ン臥)ぐル人仁eμロ凹軟(回)第5図 手続補正書(自発) 1.事件の表示 電圧非直線抵抗体OII!方法 3、補正をする者 事件との関係 特許出願人 (307)  東京芝浦′成気株式会社4、代濁人 〒100 東京都千代田区内幸町1−1−6 1、明−書金文 2、  I!gl  lfl & 補正の内容 明     繻     書 1、発明の名称 電圧非直−逢抗体の製造方法 λ 特許請求OSS 鹸化亜鉛あ為いは酸化亜鉛と酸化マグネクラムを主成分
として、これに少くとも酸化アンチモノを含む金属鹸化
物を添加混合し、この1合物を成形し九後焼成する電圧
非直線抵抗体の製造方法において、前記嚢a駿化物とし
ての酸化アンチモンは a)三酸化アyf*yoj1度が910−以上b)三酸
化アyチモンOx@鴎折によって得られる回折ライン1
21(斜方晶形)と回折ライン222 (等軸晶Jli
 ) o**ヒ−1比(llN? 4 y121 O@
gピータ/Il#rライフ222t)@Rピータ)こと
を03秦件を満1するものである電圧非直−抵抗体O展
造方法・ λ 発−O詳mなll@ 〔発明の技術分野〕 本発明は酸化亜鉛あるいは鹸化亜鉛と鹸化マグネシウム
を主成分とし、焼結体自体が非直線抵抗特性をもつ非直
線抵抗体の製造方法に関するものである。 〔発明の接衝的背景と問題点〕 非直線抵抗体は一般にはバリスタと呼ばれ、その優れた
非直線電圧−電流特性が利用されて電圧安定化、あるb
はサージ吸収を目的とした避雷器ヤサージアプノーパに
広く利用されている。代表的なものとして、近年開発畜
れた酸化亜鉛/(リスクがある。これは鹸化亜鉛あるい
は鹸化亜鉛と鹸化マグネシウムを主成分とし、これに少
量のビスマス、ア/チ、l−y、コバルト、マンガン、
クロム等の酸化物を添加し、混合造粒、成形した後、空
気中で高温焼成し、その焼結体に電橋を履り付けて構成
されるものであるOその非直線抵抗特性は非常に優れて
お)、焼結体は鹸化亜鉛粒子とその58tinまく添加
物により形成される粒界層からなり、優れた非直線抵抗
特性は鹸化亜鉛粒子と粒界層との界■に起因すると考え
られている。 しかしながら、これらの非直線抵抗体を工婁的に量讃製
造すると非直線抵抗特性の低下やその特性上のバッフ中
ばか)でなく、1lIE寿命、放電耐電等の他の性能低
下をもが発生するという問題点があった。 その原因は、主成分である酸化捏給あるいは酸化亜鉛と
酸化マグネシウムに添加され、粒界層をm成するビスマ
ス、アンチモン、コバルト、マンカン、クロム等の酸化
物の量が極めて少量であることである。(添加物全体で
も10’1以下、各成分によっては0.591以下)し
たがって主成分と添加物の1合方法が重要である事は勿
論であるが、一方反応機構上からは、出発原料の物性バ
ラツキ、善に着界中のスピネル層形成((ZnMg )
y 8b雪01鵞 又社Zn51blO@ )上大きな
役@を果九している酸化アンチ4ノ自体の繊成に基づく
物性が特に大きく影響して^るものと考えられる。一般
に市販されて^る酸化アンチモノは、方法の関係からs
b、o、の結晶形が、111図に示すXfli回H5イ
ン12t ト222カら推測できる様に斜方晶形と等軸
晶形の混在系であ〕、又、8b、0. ヤ8b、0. 
カ1−214人しt”イるのが通常である。 この機に酸化アンチモンの出発原料[8b、Osで結晶
Jitlll’bEIAEE シティb % O+ 8
b、04,8b、0. 等カ混入しているものを使用し
た場合、混在、混入比率によって反応機構に微妙な影響
を釦よ・了し、最終的に形成するスピネル層の安定性、
即ち非直線抵抗体の特性安定性に直結するものと考えら
れる。 〔発明の目的〕 本発明は上記点に鑑みなされ友もので、出発原料として
の酸化アンチモン組成の三酸化アンチモン(8b−s)
純度、*晶形9粒径を規制しtものを使用する事によっ
て安定した非直線抵抗特性を有する非直線抵抗体の製造
方法を提供することを目的とするものである。 〔発明の低要〕 本発明は鹸化I!鉛あるいは酸化亜鉛と酸化マグネシウ
ムを主成分としてこれに少くとも一種類以上の金tsi
*化物を添〃01会し、この混合物を成形し先後焼成す
る電圧非直線抵抗体の製造方法において、鍵紀金属酸化
物としての酸化アンチモン組成はa)三酸化アンチモノ
の純度99、O係以上、 b)三酸化アンチモンのx1
1回折によって得られるI折うイン121 (斜方晶形
)と回折ライン222(等軸晶形)の強電ピータ比(回
折ライン121の強電ピーク/回折ライy222の1i
!1度ピーク)が0.3以下C)平均粒径511j&4
下であることをその特徴とする〇〔発明のgA論例〕 次に本発明の実施例を図面を参照して説明する。 Zfioを例えば80モル嗟と、少なくとも一種類の會
all!化物% fill、ttfMgo 14モA[
、Bi、0.2%ルー、8b*Oa 1.54 w 慢
、Coo 1.1モル嗟% ”l0IQ、5モル−1M
、aOQ、5−t−ル1. iFe、O,Q、44ル%
O割合で秤量する。 この場合酸化アンチモノは三酸化アンチモン8bmOs
 14Kが99.s−以上、8b、o、 o結晶tf4
ki第2図の121−折ラインが示す様な斜方晶形をほ
とんど含まない等軸晶形のもの及び平均粒径2.5μの
ものil!喝し九〇 次に秤量し九酸化物管例えばボールミルに入れ、脱イオ
ン水を−MK 24時間ボールミルを作動させて%混合
する。 混合物を乾燥させ、電気炉に入れて仮焼する。 仮焼温度は例えば900℃で2時間が適当である。 仮焼すると酸化物は権状になるので、粉砕して微粒子に
する。粉砕前の酸化−K例えばポリビニルアルコールを
酸化物に対する重量比で例えば100分の11合する。 微粉砕にはボールミルを用りる。これにより微粉砕され
た酸化物とポリビニルアルコールとは実質的に均質yc
混合されている。 次に酸化物を造粒装置例えばスプレードライヤーに入れ
、粒径が例えば100ないし300 tクロンの球状団
粒にする。 この粉床状混合物をプレスにかけ、例えば直径100鵡
、厚さ25の円板に成形する。 この成形物を電気炉に入れ焼成する。焼成温度は例えば
1300℃で、時14は6時間が適当である◇焼成後の
円板状焼成物は焼成−よ勤収縮するがほぼ均質な鑑成、
密度を有する。 次く円板状焼成物の両mを軽く研磨して焼成物を露出さ
せゐ・この露出(TiK例えばアル々ニウムを溶射して
、電極を形成し非直線抵抗体を形成するO このようにして得られた非直線抵抗体の電気特性を11
3図及び@4図に示す。 113図は90℃の恒温槽中でV、mA(lnaAを非
直線抵抗体に流した場合の端子間電圧)の85係を非直
線抵抗体に印加した時の漏洩電流の変化を示す。 また1141mはIOKムの電流を100回まで印加し
たときのマ、aAO値の変化率(ΔV/V1mA )を
示す。 各図に:)いて、夷−人は従来の非直線抵抗体の特性を
、鎖−1は本実@(よる非直線抵抗体の特性を示す。 第3glかも明らかなように本発明による非直線抵抗体
は、従来の非直線抵抗体に比べてIiI電電圧電圧する
漏洩電流の変化が著しく改讐され。換言すれば、寿命4
114!!が改良されている。更に、第4図から嘴もか
なように、本発明による非直−抵抗体は、従来の非直線
抵抗体に比べて、債撃電流耐量特性をも著しく改善され
て^る。 この磯な第3図及び第4図に示す優れた特性が得られる
のは、sb、osの出発原料の物性を規制する事によっ
て、他の添加物と反応してできる粒界中のスピネル層が
安定化しているものと思われる。 本発明者らが種々検討した結果特性の安定ばは81)v
 Os ノN IJj カ99% 以上、X*a折9 
(7121と以丁及び平均粒径梯5μ以下のものを使用
した時良好であることが判明した。又、微硼構造分析に
よれば、al化アンチモノの出発原料物性の差は生成ス
ピンネル1の“量、及び0厚さ、iC有意差を生じ、反
応機構の違いの一端を窺うことができる。 なお、113図及び114図に示された特性上の違いは
第5図で示す様に量産時の14特性であるv、 mム、
In(抵抗分もれ1tfI&)C(静電移鐘)等の基本
特性バラツキの大きさにも見られる。 −5図の2曲線の謙に、蕾珊幅から例えば30−以上外
れた−のが出現した場合を“ロット不良。 と判定した場合、従来の酸化アンチ七ン出発原料物性を
風調しない時の標準バラツキはD―線で代表されるが、
不良の1曲線になる危険確率も約10畳含んで^た。 本発明によれば標準バラツキはC曲線で代表され、最悪
の場合でも9曲線内に収まり、不良ロフト発生を皆無に
できることがわかる。 上記実施例で示し丸材料組成及び、製造設備一方法は酸
化亜鉛あるーは酸化亜鉛と酸化マグネシウムを主成分と
し、バリスタ特性が得られるものであれば上記実施例に
争ずしも限定されるものではな−。 〔発明の効果〕 以上説明したIIK本発明によれば、酸化アンチ毫ンO
出*g料物性を規制する事によって、特性が安定化した
非直線抵抗体を提供することができる・ 4、図面の簡単な説明 111図は従来の酸化アンチモン組成のx4回折図で示
す説明図、112図は本発明の一実施例の酸化アンチモ
ン組成のXlitgI折図、113図は本発明の一実施
例に係る1正非直線抵抗体のd4時間−漏洩一流の関係
を示す特性図、第4図は衝撃電流耐を特性線図、第5図
はバリスタ特性のバラツキを示す特性図である。
The s1 factor is an explanatory diagram showing the X-ray diffraction diagram of the conventional anti-septane oxide composition, Figure 112 is the X-ray diffraction diagram of the antimony oxide composition of one embodiment of the present invention, and Figure 3 is the X-ray diffraction diagram of the antimony oxide composition of one embodiment of the present invention. FIG. 4 is a characteristic diagram showing the relationship between peak soldering time and leakage current of such a voltage non-linear resistor, FIG. 4 is a characteristic diagram showing shock current withstand capability, and FIG. 5 is a characteristic diagram showing variations in varistor characteristics. (7317) Agent: Patent Attorney Noriyuki Chika (
(and 1 other person) Figure 3 Responsibility Simple review (N) Figure 4 Tomo L (n 臥) Gurujinjin eμrocontinuously soft (times) Figure 5 Procedural amendment (voluntary) 1. Incident display voltage non-linear resistor OII! Method 3, Relationship with the case of the person making the amendment Patent applicant (307) Tokyo Shibaura'Seiki Co., Ltd. 4, Yokoto 1-1-6 Uchisaiwai-cho, Chiyoda-ku, Tokyo 100 1, Mei-Sho Kinbun 2, I! gl lfl & Description of amendments Summary 1, Name of the invention Method for producing voltage non-direction antibody In the method for manufacturing a voltage non-linear resistor, in which saponified metals containing metals are added and mixed, the mixture is molded, and then fired, the antimony oxide as the capsule a sulfide is a) trioxide yf * yoj 1 degree 910- or more b) Diffraction line 1 obtained by Athymon trioxide Ox@Omoori
21 (orthorhombic) and diffraction lines 222 (equiaxed Jli
) o**He-1 ratio (llN? 4 y121 O@
g Peter/Il#r Life 222t) @R Peter) A method for manufacturing a voltage non-direct resistor O that satisfies the requirements 03 Qin 1 λ Derivation - O detailed ll@ [Technical field of the invention] The present invention relates to a method for manufacturing a nonlinear resistor whose main components are zinc oxide or saponified zinc and saponified magnesium and whose sintered body itself has nonlinear resistance characteristics. [Contact Background and Problems of the Invention] Nonlinear resistors are generally called varistors, and their excellent nonlinear voltage-current characteristics are used to stabilize voltage.
is widely used in the lightning arrester Yasajia Apnopa for the purpose of absorbing surges. A typical example is zinc oxide, which has been developed in recent years (there is a risk).This is mainly composed of saponified zinc or saponified zinc and saponified magnesium, and small amounts of bismuth, a/thi, ly, cobalt, manganese,
After adding oxides such as chromium, mixing, granulating and molding, it is fired at high temperature in the air, and an electric bridge is attached to the sintered body.The non-linear resistance characteristics are extremely high. The sintered body consists of a grain boundary layer formed by saponified zinc particles and their additives, and the excellent non-linear resistance characteristics are attributed to the boundaries between the saponified zinc particles and the grain boundary layer. It is considered. However, if these non-linear resistors are manufactured in an engineered manner, they will not only result in a decrease in non-linear resistance characteristics (or buffing of the characteristics), but will also cause other performance deteriorations such as 1lIE life and discharge resistance. There was a problem with that. The reason for this is that the amount of oxides such as bismuth, antimony, cobalt, manganese, and chromium, which are added to the main components of oxidation or zinc oxide and magnesium oxide and form grain boundary layers, is extremely small. be. (The additives as a whole are less than 10'1, and depending on each component, it is less than 0.591.) Therefore, it goes without saying that the method of combining the main ingredients and additives is important, but on the other hand, from the viewpoint of the reaction mechanism, it is important to Spinel layer formation ((ZnMg) with variation in physical properties and good adhesion
It is thought that the physical properties based on the fiber composition of anti-4 oxide itself, which plays a major role in the process, have a particularly large influence. Generally commercially available antimono oxides are s
The crystal forms of 8b, 0, and 8b, as can be inferred from the Xfli times H5 in 12t diagram shown in Figure 111, are a mixed system of orthorhombic and equiaxed crystals. Y8b, 0.
Normally, 1-214 people are added. At this time, the starting raw material for antimony oxide [8b, Os is crystallized].
b, 04, 8b, 0. When using spinel mixed with the same amount, the reaction mechanism may be slightly affected depending on the mixture and mixing ratio, and the stability of the spinel layer that is finally formed may be affected.
In other words, it is thought that this is directly connected to the characteristic stability of the nonlinear resistor. [Object of the Invention] The present invention was developed in view of the above points, and uses antimony trioxide (8b-s) having an antimony oxide composition as a starting material.
The object of the present invention is to provide a method for manufacturing a non-linear resistor having stable non-linear resistance characteristics by controlling the purity and *crystal form 9 grain size and using t. [Summary of the Invention] The present invention provides saponification I! The main ingredients are lead or zinc oxide and magnesium oxide, and at least one kind of gold.
*In the method for manufacturing a voltage nonlinear resistor in which a compound is added, the mixture is molded, and pre-fired, the composition of antimony oxide as a key metal oxide is a) purity of antimono trioxide of 99, O coefficient or higher. , b) x1 of antimony trioxide
Strong electric peak ratio of I-fold in 121 (orthorhombic form) and diffraction line 222 (equiaxed crystal form) obtained by one diffraction (strong electric peak of diffraction line 121/1i of diffraction line y222)
! 1 degree peak) is 0.3 or less C) Average particle size 511j & 4
The following is a characteristic of the GA theory of the invention, which is a characteristic. For example, 80 moles of Zfio and at least one kind of meeting all! Compound % fill, ttfMgo 14 moA [
, Bi, 0.2% Lu, 8b*Oa 1.54 w arrogance, Coo 1.1 mol % ”l0IQ, 5 mol-1M
, aOQ, 5-t-ru1. iFe, O, Q, 44%
Weigh in O proportion. In this case, antimono oxide is antimony trioxide 8bmOs
14K is 99. s- or higher, 8b, o, o crystal tf4
ki, as shown by the 121-fold line in Fig. 2, which contains almost no orthorhombic crystals, and those with an average grain size of 2.5μ! Boil, weigh, and place the nonaoxide tube in a ball mill, for example, and mix with deionized water by -MK% by running the ball mill for 24 hours. The mixture is dried and calcined in an electric furnace. The appropriate calcination temperature is, for example, 900° C. for 2 hours. When calcined, the oxide becomes solid, so it is crushed into fine particles. Oxidized K before pulverization, such as polyvinyl alcohol, is added in a weight ratio of, for example, 11/100 to the oxide. A ball mill is used for fine grinding. As a result, the pulverized oxide and polyvinyl alcohol are substantially homogeneous.
mixed. The oxide is then placed in a granulating device, such as a spray dryer, to form spherical agglomerates having a particle size of, for example, 100 to 300 tons. This powder bed-like mixture is pressed and formed into a disk having a diameter of 100 mm and a thickness of 25 mm, for example. This molded product is placed in an electric furnace and fired. The firing temperature is, for example, 1300°C, and 6 hours is appropriate for time 14. ◇The disc-shaped fired product after firing shrinks during firing, but is almost homogeneous.
It has density. Next, both m of the disc-shaped fired product are lightly polished to expose the fired product. This exposure (TiK, for example, aluminum is thermally sprayed to form electrodes and a non-linear resistor). The electrical characteristics of the nonlinear resistor obtained by
Shown in Figure 3 and Figure @4. Figure 113 shows the change in leakage current when a voltage of 85 V, mA (voltage between terminals when lnaA is applied to the non-linear resistor) is applied to the non-linear resistor in a constant temperature bath at 90°C. Further, 1141m indicates the rate of change (ΔV/V1mA) in the value of aAO when the current of IOK is applied up to 100 times. In each figure:), chain-1 shows the characteristics of the conventional non-linear resistor, and chain-1 shows the characteristics of the non-linear resistor according to the present invention. Compared to conventional non-linear resistors, linear resistors have a significantly improved change in leakage current to IiI voltage.
114! ! has been improved. Furthermore, as can be clearly seen from FIG. 4, the non-linear resistor according to the present invention has significantly improved shock current withstand characteristics as compared to the conventional non-linear resistor. The excellent properties shown in Figures 3 and 4 can be obtained by controlling the physical properties of the starting materials for sb and os, and by controlling the physical properties of the starting materials for sb and os, spinel layers are formed in the grain boundaries that form when they react with other additives. appears to be stabilizing. As a result of various studies by the present inventors, it was found that the characteristics were stable81)v
Os no N IJj more than 99%, X*a fold 9
(It was found that the results were good when using 7121 and 7121 with an average particle size of 5μ or less. Also, according to the microstructure analysis, the difference in the physical properties of the starting material of the aluminized antimono There are significant differences in the amount, zero thickness, and iC, and we can get a glimpse of the difference in the reaction mechanism. The 14 characteristics of time are v, mm,
This can also be seen in the magnitude of the variation in basic characteristics such as In (resistance leakage 1tfI &) C (electrostatic transfer). -If a deviation of, for example, 30 degrees or more from the bud coral width appears in the two curves in Figure 5, it is determined that the lot is defective. The standard variation of is represented by the D-line,
The risk probability of falling into one defective curve was also about 10 tatami. According to the present invention, the standard variation is represented by the C curve, and even in the worst case, it falls within the 9 curve, and it can be seen that the occurrence of defective lofts can be completely eliminated. The material composition, manufacturing equipment, and method shown in the above examples are limited to the above examples as long as the main ingredients are zinc oxide or zinc oxide and magnesium oxide, and varistor characteristics can be obtained. It's nothing. [Effects of the Invention] According to the IIK present invention explained above, oxidized antipropylene O
* By controlling the physical properties of the raw material, it is possible to provide a non-linear resistor with stabilized characteristics. 4. Brief explanation of the drawings Figure 111 is an explanatory diagram showing the x4 diffraction diagram of the conventional antimony oxide composition. , 112 is an XlitgI diagram of the antimony oxide composition according to an embodiment of the present invention, and 113 is a characteristic diagram showing the relationship between d4 time and leakage current of a positive nonlinear resistor according to an embodiment of the present invention. FIG. 4 is a characteristic diagram showing impact current resistance, and FIG. 5 is a characteristic diagram showing variations in varistor characteristics.

Claims (1)

【特許請求の範囲】 酸化亜鉛あるいは鹸化亜鉛と酸化マグネシウムを主成分
として、これに少くとも酸化アンチモンを含む金属酸化
物を添加温合し、この混合物を成形した後焼成する電圧
非直線抵抗体の製造方法に分いて、前記金[1g111
化物としての酸化アンチモンは a)三酸化アンチモンの純度が99.0−以上b)三酸
化アンチモンのX線回折によって得られる回折ライン1
21(斜方晶形)と回折ライン122(等軸晶形)の強
度ピーク比(回折ライン121の強度ピーク/@折ライ
ン122の強度ピーク)が0.3以下 C)平均粒11O,5μ以下である ことをの3条件を満足するものである電圧非直線抵抗体
の製造方法。
[Claims] A voltage nonlinear resistor whose main components are zinc oxide or saponified zinc and magnesium oxide, which are heated with the addition of a metal oxide containing at least antimony oxide, and which is molded and then fired. According to the manufacturing method, the gold [1g111
Antimony oxide as a compound has a) purity of antimony trioxide of 99.0- or higher b) diffraction line 1 obtained by X-ray diffraction of antimony trioxide
The intensity peak ratio of 21 (orthorhombic form) and diffraction line 122 (equiaxed form) (intensity peak of diffraction line 121/@intensity peak of diffraction line 122) is 0.3 or less C) Average grain 11O, 5μ or less A method for manufacturing a voltage nonlinear resistor that satisfies the following three conditions.
JP57035862A 1982-03-09 1982-03-09 Method of producing voltage nonlinear resistor Granted JPS58153302A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57035862A JPS58153302A (en) 1982-03-09 1982-03-09 Method of producing voltage nonlinear resistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57035862A JPS58153302A (en) 1982-03-09 1982-03-09 Method of producing voltage nonlinear resistor

Publications (2)

Publication Number Publication Date
JPS58153302A true JPS58153302A (en) 1983-09-12
JPH0131682B2 JPH0131682B2 (en) 1989-06-27

Family

ID=12453791

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57035862A Granted JPS58153302A (en) 1982-03-09 1982-03-09 Method of producing voltage nonlinear resistor

Country Status (1)

Country Link
JP (1) JPS58153302A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6197801A (en) * 1984-10-18 1986-05-16 株式会社東芝 Non-linear resistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6197801A (en) * 1984-10-18 1986-05-16 株式会社東芝 Non-linear resistor
JPH0577164B2 (en) * 1984-10-18 1993-10-26 Tokyo Shibaura Electric Co

Also Published As

Publication number Publication date
JPH0131682B2 (en) 1989-06-27

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