JPS58152252A - Information recording material - Google Patents

Information recording material

Info

Publication number
JPS58152252A
JPS58152252A JP57034608A JP3460882A JPS58152252A JP S58152252 A JPS58152252 A JP S58152252A JP 57034608 A JP57034608 A JP 57034608A JP 3460882 A JP3460882 A JP 3460882A JP S58152252 A JPS58152252 A JP S58152252A
Authority
JP
Japan
Prior art keywords
thin film
resistance
film
titanium nitride
information recording
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57034608A
Other languages
Japanese (ja)
Inventor
Norio Isomatsu
礒松 則夫
Nagayoshi Tsukane
永芳 塚根
Shiro Kuwayama
桑山 嗣郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daicel Corp
Original Assignee
Daicel Corp
Daicel Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daicel Corp, Daicel Chemical Industries Ltd filed Critical Daicel Corp
Priority to JP57034608A priority Critical patent/JPS58152252A/en
Publication of JPS58152252A publication Critical patent/JPS58152252A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/10Bases for charge-receiving or other layers
    • G03G5/104Bases for charge-receiving or other layers comprising inorganic material other than metals, e.g. salts, oxides, carbon

Abstract

PURPOSE:To obtain an information recording material having superior resistance to scratch, oxidation and moisture and undergoing little change in the surface resistance with the passage of time, by coating one side or both sides of a support with a thin film of titanium carbide or titanium nitride. CONSTITUTION:One side or both sides of a support such as a film of a transparent flexible org. polymer such as polyethylene terephthalate are coated with a thin film of titanium carbide or titanium nitride. The film has high scratch resistance and resistance to oxidation and moisture. Accordingly, the surface resistance is hardly changed, and stable performance is maintained. By the coating an information recording film applicable to electrostatic recording, electrophotographic recording, etc. is obtd.

Description

【発明の詳細な説明】 本ll@は替電記−9電子写真記会等に用い褥ゐ情報記
―用材料、l1ivc情報記銀用フイルムに―す為@ 従来よ珈、この種の記―用材料としては、ガラス中、有
機高分子から1に石支持体上に導電性薄膜を薯−ティン
グしえものが知られている◎例えば導電性薄膜として、
金、銀、鋼、ムt。
[Detailed Description of the Invention] This ll@ is for use as a substitute telegraph material for use in electrophotographic meetings, etc., and as a film for livc information recording. ◎For example, as a conductive thin film, a conductive thin film made of organic polymers in glass and on a stone support is known.
Gold, silver, steel, mutt.

mt 、 orgo金属単体%★九は金属合金およびイ
シジクム、スズ勢の酸化物等種々の薄膜が提案されてい
る@しかしながら、これらの金属1九は金属合金および
金属酸化物等はその体積■有鑞抗が10−6〜10−1
9・個の範−にあるO質って1例えば静電記―等に使用
される10〜1がρ/ロ の表両抵抗を有する導電性フ
ィルムを得る九めには少くとも1oo 輩以上望★しく
は1011ム以上の厚与を要求され、所望の表面抵抗を
得為丸めに轢厚みO制御を厳しくし亀ければならない。
mt, orgoMetal single substance % ★9 Various thin films such as metal alloys and oxides of tin group have been proposed. resistance is 10-6 to 10-1
The O quality in the range of 9.1 is at least 10 to 10 used for electrostatics, etc., to obtain a conductive film with a resistance of ρ/ro. Desirably, a thickness of 1011 μm or more is required, and the track thickness O must be strictly controlled in order to obtain the desired surface resistance.

又、これらO金属を九は金属合金および金属酸化物の薄
膜は非常に県かく、傷がつ自1く、空気にさら1れゐζ
七によって酸化され鳥いという欠点を持っている・この
丸め、情報記―用材料として要求され為経時変化の少い
表II抵抗を有する材料を得ゐことが難しかつ九〇本1
ill1者ら#i従来のかかる欠点を克服し、情報記借
用材料として畳求畜れ為諸性能を満足し得る材料を得る
べく、支持体上に着覆す為透―導電薄膜の光学的性質、
電気的性質1機械的性質等に閤し鋭意研究の#果、支持
体O片画又は両INKチタンカーバイド又はチタンナイ
トライドを主成分とす為薄膜をコーティングするととに
よって、情報記最期フィルムとして充分な性―を具備し
え透―導電性フィルムー得られ纂ことを見い出し本轟−
に周遍しえもo”tt6番〇即ち本抛−は支持体0片両
又は岡IIIKチタンカーバイド又はチタンナイトライ
ドを主成分とす為薄膜をコーティングしたことを譬徽と
する情@I!一層材料で参ゐ〇 本発11の薄膜は、1w纏傷性が高く、耐酸化愉が畠如
、璽に耐瀝嫌があp、質って表両抵抗の変化が少く安電
し丸性能が―持され↓・叉、体sn有#に抗が比較的大
魯い丸め情報記#M#科として有用な表II抵抗が10
〜1がめz、  @1101111層を得るためKFi
%質楽の金属*o*i+uc砿べて厚拳制御が厳しく要
求1れ1に−ので劇途上も有刹で参る0 本1lIIIK使用される支持体としてはポリエチレン
テレ7メレート、ポリブチレンテレ7声レート、ポリエ
チレン−!、4−?7)レンジカルがキシレート等のポ
リエステル鎖、ポシイ電ド。
In addition, thin films of metal alloys and metal oxides are very sensitive to scratches, and are not exposed to air.
It has the disadvantage of being oxidized by 7, and it is difficult to obtain a material with Table II resistance that does not change over time because it is required as a material for rounding and information records.
In order to overcome these conventional drawbacks and obtain a material that satisfies the various performance requirements of tatami mats as an information storage material, we developed optical properties of a transparent conductive thin film to be deposited on a support.
As a result of intensive research into electrical properties 1, mechanical properties, etc., by coating the support with a thin film containing titanium carbide or titanium nitride as the main component, it is sufficient as the final film for information recording. Todoroki discovers that it is possible to obtain a transparent conductive film with the following characteristics.
This article is based on the fact that the main component is Oka IIIK titanium carbide or titanium nitride, so it is coated with a thin film. In terms of materials, the thin film of No. 11 has high scratch resistance, oxidation resistance is excellent, and corrosion resistance is excellent. However, the resistance is relatively large compared to the body sn existence.Table II resistance is 10 which is useful as a rounding information record #M# class.
~1 gamez, KFi to get @1101111 layer
% quality metal *o*i+uc The thickness control is strictly required 1 to 1-, so there will be some trouble on the way.0 This 1lIIIK The supports used are polyethylene tele 7 merate and polybutylene tele 7. Voice rate, polyethylene-! , 4-? 7) Rangecal is polyester chain such as xylate, positive electrode.

竜ルーースアセテート、セル謬−スア竜テートブチレー
ト、ポリスチレン、ポリメチルメタアタリレート、ポリ
カーボネート、ポリスルフォン、ポリ7ツ化エチレン等
の有機高分子物質あるいはガラス臀が挙げられるo *
 K ’a @で可撓性Oある有機高分子物質のフィル
ムが有用であ為O 本**0チタンカーバイド又はチタンナイトライドを主
成分とす為薄膜とはn1llの中等性を示す透−な薄膜
であって%!0vt91以下O倫の元素例えば鴎、アル
1−ラム、鋼、タ曹ム、JLツケル、鉄、コバルト、カ
ド電つム、又はこれらO化金物などをll、mして4j
Lい0本発明KJI)いて支持体O片面又は両1IIK
チタンカーバイド又はチタンナイトライドを主成分とす
る薄膜を;−ティングするには物思化学的方法が用いら
れる。かかる方法としては真空蒸着9反応性真空蒸着、
イオンプレーテインダ。
Examples include organic polymer substances such as loose acetate, cellulose tate butyrate, polystyrene, polymethyl metatallate, polycarbonate, polysulfone, and polysulfate ethylene, or glass.
A film of an organic polymer substance that is flexible and has K'a@ is useful because it is a thin film that is mainly composed of titanium carbide or titanium nitride. % thin film! Elements of 0vt91 or less, such as seaweed, aluminum, steel, aluminum, iron, cobalt, copper, or these O-based metals, etc., are ll, m and 4j
L 0 Invention KJI) Support O on one side or on both sides 1IIK
Physical and chemical methods are used to deposit thin films based on titanium carbide or titanium nitride. Such methods include vacuum evaporation 9 reactive vacuum evaporation;
Ionpreteinda.

カソードスパッタすyダ6反応性スパッタリング、プラ
ズマ連射法等O種々の方法が拳けられる◇形成され為薄
膜の均一性、ll造の容重さ。
Various methods are used such as cathode sputtering, reactive sputtering, and continuous plasma firing. ◇ Due to the uniformity of the thin film formed and the volume of the construction.

薄膜の1着f!に1にどの点からチタンカーバイド又は
チタンナイトライドO直鎖マダネト覆ン★ソードスパッ
タリングもしくは金属チタン6j[応愉マダネトロンカ
ソードスパッタリン/##41に好重しい〇 チタンカーバイド又はチタンナイトライドの薄膜の厚さ
は機械的、化学約11度、透11性、導電性をどに対す
る要求41mKよって異t&が。
Thin film first place f! 1. From what point do you cover titanium carbide or titanium nitride O straight chain ★ Sword sputtering or metal titanium 6j [favorable for Cathode sputtering/##41 〇 Thin film of titanium carbide or titanium nitride The thickness varies depending on the mechanical and chemical requirements of approximately 11 mK, permeability of 11 mK, and electrical conductivity of 11 mK.

少くとも100ム以上、均一で安弯倉導電愉を確保す為
えめKFisooム以上が轡に好會しい。
At least 100 μm or more, and in order to ensure uniform conductivity, it is preferable to use KFisoom or more.

本尭−に於ける支持体の片面又は両IFKチタン★−バ
イト又はチタンナイトライドを主成分とすみ薄膜をコー
ティングしえ構成は基本構成であ壷、必@に応じて上記
支持体にシリコーン系、ポジエステル系、ポリウレタン
系、ポジアクリレートIA、エポキシ系等のアンダーコ
ート層を設けてから、チタンカーバイド叉はチタンナイ
トライド薄膜を形成させえ砂、あるいはチタンカーバイ
ド又はチタンナイトライド薄膜の上(、シリコーン、チ
タネート、金属アルコキシド、ゼラチン、′3−ジオン
などの保臘コート層を設けゐことも可能である0更に高
次の目的の九めにこのチタンカーバイド又はチタンナイ
トライド薄膜O上に光電導性物質の層を設けた)、高置
電体物質層、熱可履性薄膜、エレクトロル建ネツセンス
材料等の層を設けることも可能である〇 即ち、本発明の情報記会期材料は電子写真記録)静電記
録、サーモプラスチック記脅、ヒートモード記録、ディ
スプレイ用電極等の量適に使用でiiA。
One or both sides of the support in this case can be coated with a thin film mainly composed of IFK titanium or titanium nitride. After providing an undercoat layer of positive ester, polyurethane, positive acrylate IA, epoxy, etc., a titanium carbide or titanium nitride thin film is formed on the sand or on the titanium carbide or titanium nitride thin film. It is also possible to provide a protective coating layer of silicone, titanate, metal alkoxide, gelatin, 3-dione, etc. For even higher purposes, it is possible to form a photoconductor on this titanium carbide or titanium nitride thin film. It is also possible to provide a layer of a high-voltage electrolyte material, a thermoplastic thin film, an electrolyte material, etc. In other words, the information material of the present invention is an electrophotographic material. Recording) Appropriate use of electrostatic recording, thermoplastic recording, heat mode recording, display electrodes, etc. iiA.

以下、本発明の情報記会期材料の一つOII造法として
si+u*例を持って説−するが、本発明がこれK11
ji!される一〇ではない。
Hereinafter, the si+u* example will be explained as one of the OII manufacturing methods of the information material of the present invention.
ji! It's not 10 that will be done.

mm例 1 ポリエチレンテレ7メレートの12!!P厚味の二輪延
伸フィルムを支持体として、この片画にチタンカーバイ
ド(テ10)のターゲットで、低温高遣スパッIリンダ
装置(日電アネルパ(株)@ 8F?−210Hml 
’)を使用して真空IIIL1x1o−’テOffに保
ちながら加速電圧4にマ、ビーム電11401+ムで高
周波スパツタリングし九〇仁の時のメツ(ツタ適度はt
oA/i−で、4I秒間スノ(ツタした曽果、得られた
チタンカーバイド薄膜の厚味は約?00ムであつ九〇こ
の透明導電!にフィルムの表面抵抗は2X1@’め々で
あ抄、逓−性は可視光−透過率でybs  1着薄膜の
密着性はセジテープによるビーリングテストによりても
剥離されないはと充分な**を持ってい九〇を九ガーゼ
による摩擦テストで1002の荷重で100往復し九が
チタンカーバイド薄膜の剥離Fiはとんと起らず、表面
抵抗は1.2倍に増加するに留壕った〇 輿論例 冨 ポリエチレンテレ7タレー)01!I、**jl味の二
軸延伸フィルムを支持体としてこの片爾にチタンナイト
ライド(テ1創のターゲットで、僑温高這スパッタリン
グ装置(日電アネルパ(株)@ 5py−z 10 !
Ill )を値用して、真空11叩Xl0−’テorr
  K保ちながら加速電圧4にマ、ビーム電流40mム
で^周波スパッタリングした。この時のスパッタ適度は
!GA71−で15秒間スパッタし九曽果、得られ九チ
タンナイトライドの薄膜の厚味は約rtooム であり
九。この透明導電性フィルムの表面抵抗は5XIO’〜
墨X10”Ω沖 であに、透明性は可視光−透過率で7
4嘔あ塾。
mm example 1 12 of polyethylene tele7 merate! ! Using a P-thick two-wheeled stretched film as a support, a titanium carbide (TE10) target was applied to this piece using a low-temperature, high-temperature sputter I-linda device (Nichiden Anelpa Co., Ltd. @ 8F?-210Hml).
') using a vacuum IIIL1x1o-' while keeping it off, set the acceleration voltage to 4, and perform high frequency sputtering with a beam electric 11401+.
The thickness of the obtained titanium carbide thin film was about 00 μm, and the surface resistance of the film was 2×1@' for this transparent conductive film. The adhesion of the first thin film is 1002 in the friction test with gauze. After 100 reciprocations under load, the titanium carbide thin film did not peel off at all, and the surface resistance increased by 1.2 times. Using a biaxially stretched film as a support, titanium nitride (T1) was applied to this layer using a high-temperature high-temperature sputtering device (Nichiden Anelpa Co., Ltd. @ 5py-z 10!).
Using the value of Ill ), the vacuum 11 stroke
Frequency sputtering was performed at an acceleration voltage of 4 and a beam current of 40 mm while maintaining K. The spatter is moderate at this time! After sputtering with GA71- for 15 seconds, the resulting thin film of titanium nitride has a thickness of about 100 mm. The surface resistance of this transparent conductive film is 5XIO'~
Ink
4. A cram school.

蒸着薄膜の密着性はセロテープによるビーリンダテス)
Kよって剥離されない充分な11IIJImを持ってい
え。
The adhesion of the vapor-deposited thin film was determined by adhesive tape using cellophane tape.
It has enough 11IIJIm that it will not be peeled off by K.

會九ガーゼによる摩擦テストで100tの荷重で100
往復したが、チタンナイトライド薄膜の剥離は認められ
ず表面抵抗は1.1倍に増加するに1壕った。更にカッ
ターナイフを10Ofの荷重て押しつけて纏傷をつけた
後、−徹鏡によ)傷面を観察し九が、剥離は認めもれな
かつ九〇 出願人代理人  吉 41    i
100 at a load of 100 tons in a friction test using Aikyu gauze.
Although the titanium nitride thin film was moved back and forth, no peeling of the titanium nitride thin film was observed, and the surface resistance increased by 1.1 times. After applying a cutter knife with a force of 100 mph to create a wound, the wound surface was observed (through a mirror) and no peeling was observed.

Claims (1)

【特許請求の範囲】[Claims] 支持体の片面又は両画にチタンカーバイド又はチタンナ
イトライドを主成分とする薄膜を;−ティングし九こと
を轡黴とする情報記−用材料O
A thin film mainly composed of titanium carbide or titanium nitride is coated on one or both sides of the support to prevent mold and mildew.
JP57034608A 1982-03-05 1982-03-05 Information recording material Pending JPS58152252A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57034608A JPS58152252A (en) 1982-03-05 1982-03-05 Information recording material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57034608A JPS58152252A (en) 1982-03-05 1982-03-05 Information recording material

Publications (1)

Publication Number Publication Date
JPS58152252A true JPS58152252A (en) 1983-09-09

Family

ID=12419070

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57034608A Pending JPS58152252A (en) 1982-03-05 1982-03-05 Information recording material

Country Status (1)

Country Link
JP (1) JPS58152252A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0120581A2 (en) * 1983-02-15 1984-10-03 Xerox Corporation Layered photoresponsive imaging device
EP0161933A2 (en) * 1984-05-15 1985-11-21 Xerox Corporation Electrophotographic imaging

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58137151A (en) * 1982-02-04 1983-08-15 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Information disc readable optically
JPS58142893A (en) * 1982-02-19 1983-08-25 Toshiba Corp Optical information recording medium

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58137151A (en) * 1982-02-04 1983-08-15 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Information disc readable optically
JPS58142893A (en) * 1982-02-19 1983-08-25 Toshiba Corp Optical information recording medium

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0120581A2 (en) * 1983-02-15 1984-10-03 Xerox Corporation Layered photoresponsive imaging device
EP0161933A2 (en) * 1984-05-15 1985-11-21 Xerox Corporation Electrophotographic imaging

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