JPS63172939A - Analysis of composition of thin film - Google Patents
Analysis of composition of thin filmInfo
- Publication number
- JPS63172939A JPS63172939A JP62004086A JP408687A JPS63172939A JP S63172939 A JPS63172939 A JP S63172939A JP 62004086 A JP62004086 A JP 62004086A JP 408687 A JP408687 A JP 408687A JP S63172939 A JPS63172939 A JP S63172939A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- metals
- material layer
- backing material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 54
- 238000004458 analytical method Methods 0.000 title claims abstract description 12
- 239000000203 mixture Substances 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 239000000463 material Substances 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 19
- 239000010408 film Substances 0.000 claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 14
- 230000001681 protective effect Effects 0.000 claims abstract description 14
- 229910052755 nonmetal Inorganic materials 0.000 claims abstract description 13
- 150000002739 metals Chemical class 0.000 claims description 11
- 238000000682 scanning probe acoustic microscopy Methods 0.000 claims description 11
- 150000002843 nonmetals Chemical class 0.000 claims description 9
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 claims description 5
- 238000000992 sputter etching Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 abstract description 7
- 229920006332 epoxy adhesive Polymers 0.000 abstract description 6
- 239000000853 adhesive Substances 0.000 abstract description 5
- 239000004033 plastic Substances 0.000 abstract description 4
- 229920003023 plastic Polymers 0.000 abstract description 4
- 229910052737 gold Inorganic materials 0.000 abstract description 3
- 239000010931 gold Substances 0.000 abstract description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 13
- 229910052786 argon Inorganic materials 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000005289 physical deposition Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- -1 argon ions Chemical class 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- FBOUIAKEJMZPQG-AWNIVKPZSA-N (1E)-1-(2,4-dichlorophenyl)-4,4-dimethyl-2-(1,2,4-triazol-1-yl)pent-1-en-3-ol Chemical compound C1=NC=NN1/C(C(O)C(C)(C)C)=C/C1=CC=C(Cl)C=C1Cl FBOUIAKEJMZPQG-AWNIVKPZSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000001227 electron beam curing Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000000123 paper Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Analysing Materials By The Use Of Radiation (AREA)
- Sampling And Sample Adjustment (AREA)
Abstract
Description
【発明の詳細な説明】
（発明の利用分野）
この発明は、基板上に形成された薄膜の組成分析法に関
するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Application of the Invention) The present invention relates to a method for analyzing the composition of a thin film formed on a substrate.
（発明の背景）
基板と接する薄膜の界面の組成分布は、一般的に薄膜の
表面からス・ぐツタイオンエツチングとＡＥＳ （オー
ジェ電子分光）法、ｘｐｓ （Ｘ線光電子分光）法を併
用して分析を行なう方法が用いられている。(Background of the Invention) The composition distribution at the interface of a thin film in contact with a substrate is generally determined from the surface of the thin film using a combination of ion etching, AES (Auger electron spectroscopy), and XPS (X-ray photoelectron spectroscopy). A method of conducting analysis is used.
しかし、２成分以上の金属・非金属を含む薄膜を通常用
いられているアルゴンイオンでス／４’ ツタイオンエ
ツチングを行なう場合、薄膜を構成する成分のスパッタ
率が異なり均一に膜の厚さ方向に掘れているか疑問が残
シ、真の界面の金属・非金属の組成分布の情報であるか
判らない。However, when a thin film containing two or more components of metals and non-metals is subjected to S/4' ion etching using commonly used argon ions, the sputtering rate of the components that make up the thin film is different and the sputtering rate is uniform across the thickness of the film. There remains some doubt as to whether this information is well-known, and it is unclear whether this is information on the true compositional distribution of metals and non-metals at the interface.
（発明の目的）
したがって本発明の目的は、基板上に形成された薄膜の
基板に接している薄膜の界面の金属・非金属の組成分布
を直接分析する技術を提供することにある。(Objective of the Invention) Therefore, an object of the present invention is to provide a technique for directly analyzing the composition distribution of metals and non-metals at the interface of a thin film formed on a substrate and in contact with the substrate.
この目的を達成するために、本発明は基板上に形成され
た薄膜を基板から剥離することにょシ、薄膜の界面の金
属・非金属の組成分布を直接分析できることを発見し本
発明に到達した。In order to achieve this objective, the present invention has been made by discovering that it is possible to directly analyze the composition distribution of metals and non-metals at the interface of the thin film by peeling the thin film formed on the substrate from the substrate, and this has led to the present invention. .
（発明の構成）
本発明は、各種基板上に形成された２成分以上の金属・
非金属を含む薄膜と基板が接する界面の上記薄膜の金属
・非金属の組成分布を分析する方法において、該薄膜の
表面に、必要に応じて保護膜を形成した後、裏打ち材層
を付着させ、この裏打ち材層と薄膜を基板から剥離する
ことによシ、薄膜の界面の金属・非金属の組成分布を直
接分析することを特徴とする薄膜の組成分析法である。(Structure of the Invention) The present invention provides a method for forming metals of two or more components formed on various substrates.
In the method of analyzing the composition distribution of metals and nonmetals in the thin film mentioned above at the interface where a thin film containing a nonmetal and a substrate are in contact, a protective film is formed as necessary on the surface of the thin film, and then a backing material layer is attached. , is a thin film composition analysis method characterized by directly analyzing the composition distribution of metals and nonmetals at the interface of the thin film by peeling the backing material layer and the thin film from the substrate.
上記基板は金属、ガラス、プラスチ、り、紙、繊維等の
任意の材料からなる板、ディスク、テープ、カード、ウ
ェブ、フィルム、シート、ブロック等の任意の物品でよ
い。例えば、本発明が適用できる基板は、ポリカーゲネ
ート、ポリメチルメタクリレート、塩化ビニル、ポリエ
ステル、エポキシ等のプラスチ、り材料及びガラス、ア
ルミナ、シリコン等の無機材料によって作られている。The substrate may be any article such as a plate, disk, tape, card, web, film, sheet, block, etc. made of any material such as metal, glass, plastic, paper, fiber, etc. For example, substrates to which the present invention is applicable are made of plastic materials such as polycargenate, polymethyl methacrylate, vinyl chloride, polyester, and epoxy, and inorganic materials such as glass, alumina, and silicon.
上記の薄膜を構成する金属は、周期表のＩａ族〜■族、
Ｉｂ族ｎｂ族、例えば鉄、コバルト、ニッケル、バナジ
ウム、チタン、銅、亜鉛等が挙げられる。また非金属は
、周期表の［［ｂ族〜■ｂ族例えば、炭素、アルミニウ
ム、−ケイ素、インジウム、スズ、セレン、テルル等が
挙げられる。しかし、これに限定されるものではない。The metals constituting the above thin film are Groups Ia to Group II of the periodic table,
Examples of the Ib group and nb group include iron, cobalt, nickel, vanadium, titanium, copper, and zinc. Examples of the non-metal include groups B to B of the periodic table, such as carbon, aluminum, silicon, indium, tin, selenium, and tellurium. However, it is not limited to this.
基板上に形成された薄膜の平均の厚みは、５０Ｘから１
０μとすることができる。The average thickness of the thin film formed on the substrate is 50X to 1
It can be set to 0μ.
上記薄膜を基板から剥離するためには裏打ち材層を用い
る。この裏打ち材としては上記薄膜と基板との間の剥離
強度よシも薄膜と裏打ち材層との間の剥離強度が高くな
るような裏打ち材層であれば任意の材料が使える。一般
には室温で硬化する材料、例えばエポキシ系接着剤、Ｕ
ｖ硬化あるいはＥＢ硬化性樹脂が好ましい。裏打ち材を
塗布する方法は、へらはけハンドローラーを用いて手作
業で行なってもよいし、フローがンポールガン等の接着
剤塗付機器を用いて行なってもよい。この裏打ち材の厚
みは敷部程度でよい。A backing material layer is used to peel the thin film from the substrate. As this backing material, any material can be used as long as the backing material layer has a higher peel strength between the thin film and the backing material layer than the peel strength between the thin film and the substrate. Generally, materials that cure at room temperature, such as epoxy adhesives,
V-curing or EB-curing resins are preferred. The backing material may be applied manually using a spatula hand roller, or may be applied using an adhesive application device such as a flow gun. The thickness of this lining material may be about the same as the thickness of the lining.
本発明においては、薄膜を基板から剥離する際、薄膜の
損傷を防ぐために上記薄膜上に裏打ち材を形成する前に
予め保護膜を形成しておくのが特に好ましい。この保護
膜としては、真空蒸着法、スミ４ツタリング法、イオン
ブレーティング法等のＰＶＤ （物理的堆積）法で薄膜
化可能な物質であればよい。例えば、金、銀、銅、白金
、炭素等が挙げられる。In the present invention, in order to prevent damage to the thin film when peeling the thin film from the substrate, it is particularly preferable to form a protective film in advance before forming a backing material on the thin film. This protective film may be made of any material that can be made into a thin film by a PVD (physical deposition) method such as a vacuum evaporation method, a sumi 4 tsuttering method, or an ion blasting method. Examples include gold, silver, copper, platinum, carbon, and the like.
薄膜の表面上に保護膜を形成する方法は、一般的なＰＶ
Ｄ （物理的堆積）法が適用できる。The method of forming a protective film on the surface of a thin film is the general PV
D (physical deposition) method can be applied.
本発明では、上記のようにして、保護膜を介して、また
は介さずに、裏打ち材層上に転写された薄膜について組
成分布分析を行う。薄膜−裏打ち材層あるいは薄膜−保
護膜−裏打ち材層より成る試験片を基板から剥離するの
は容易にできる。通常は基板を固定した後、上記試験片
を片側から順次剥離すればよい。In the present invention, a composition distribution analysis is performed on the thin film transferred onto the backing material layer with or without a protective film as described above. A specimen consisting of a thin film-backing material layer or a thin film-protective film-backing material layer can be easily peeled off from the substrate. Normally, after fixing the substrate, the test pieces may be peeled off from one side in sequence.
上記試験片に対する薄膜の組成分析は公知の任意分析法
が適用できる。本発明は特に薄膜の厚さ方向の組成分布
の分析に適している。この場合にはアルゴンガスエツチ
ングとオージェ電子分光（ＡＥＳ ）法あるいはＸ線光
電子分光（ｘｐｓ ）法とを併用するのが好ましい。以
下、具体例にょシ、本発明を説明する。Any known analytical method can be applied to the thin film composition analysis for the above test piece. The present invention is particularly suitable for analyzing the composition distribution in the thickness direction of a thin film. In this case, it is preferable to use argon gas etching in combination with Auger electron spectroscopy (AES) or X-ray photoelectron spectroscopy (XPS). The present invention will be explained below using specific examples.
第１図に示した様に、プラスチック基板１に接している
薄膜２０表面に、金をスパッタリング法で形成し、保護
膜３とした。As shown in FIG. 1, gold was formed on the surface of the thin film 20 in contact with the plastic substrate 1 by sputtering to form a protective film 3. As shown in FIG.
この保護膜の上側に、薄膜を基板から剥離する場合の裏
打ち材層４として、エポキシ系接着剤を室温ではけで塗
布した。接着剤が完全に硬化した後、このエポキシ系接
着剤と保護膜と薄膜よ構成る試験片を基板から１８０度
剥離し、ＡＥＳ法による組成分析用試験片とした。On the upper side of this protective film, an epoxy adhesive was applied with a brush at room temperature as a backing material layer 4 when the thin film was peeled off from the substrate. After the adhesive was completely cured, the test piece consisting of the epoxy adhesive, protective film, and thin film was peeled off from the substrate at 180 degrees to obtain a test piece for compositional analysis by AES method.
上記薄膜はＢ、Ｃ，Ｄ、Ｅで示した４元素の金属と非金
属を含む膜である。（なお、ＡＥＳで検出される上記基
板１とエポキシ接着剤４の炭素は以下の第２，３図では
ＡおよびＦで示しである）比較のために、従来法によっ
て、アルゴンガスエツチングとＡＥＳ法とを併用して、
基板上に形成された薄膜をこの薄膜表面から深さ方向に
組成分布分析した結果を第２図に示す。The above-mentioned thin film is a film containing metals and non-metals of four elements shown as B, C, D, and E. (The carbon in the substrate 1 and the epoxy adhesive 4 detected by AES is indicated by A and F in Figures 2 and 3 below.) For comparison, argon gas etching and AES etching were performed using the conventional method. In combination with
FIG. 2 shows the results of analyzing the composition distribution of a thin film formed on a substrate in the depth direction from the surface of the thin film.
この分析結果から、薄膜と基板の界面と考えられる位置
（すなわち薄膜のＤ成分のオージェ信号の強度が減少し
、基板のＡ成分のオージェ信号の強度が増加しはじめる
）で、薄膜のＣ成分が偏在している可能性を示している
が界面の位置が推定の域を出ないことと、Ｃ成分は薄膜
の他の成分と比較して、アルゴンガスに対するスパッタ
率が低くスパッタリング速度が遅いため、Ｃ成分のオー
ジェ信号が遅れる可能性があシ、界面の偏在を断定する
ことはできない。From this analysis result, we can see that the C component of the thin film increases at a position considered to be the interface between the thin film and the substrate (i.e., the intensity of the Auger signal of the D component of the thin film decreases, and the intensity of the Auger signal of the A component of the substrate begins to increase). This indicates the possibility that the C component is unevenly distributed, but the location of the interface is only a guess, and the C component has a low sputtering rate for argon gas and a slow sputtering speed compared to other components of the thin film. There is a possibility that the Auger signal of the C component will be delayed, and it is not possible to determine the uneven distribution of the interface.
第３図は本発明方法によって上記薄膜を転写した上記試
験片について、アルゴンガスエツチングとＡＥＳ法を併
用し、薄膜の界面からの深さ方向の組成分布令ｉ′ある
。FIG. 3 shows the composition distribution range i' in the depth direction from the interface of the thin film using a combination of argon gas etching and the AES method for the test piece to which the thin film was transferred by the method of the present invention.
会社聴者
この試料を用いた場合、スパッタリング時間が０の位置
が確かに薄膜が基板と接している界面であシ、界面にＣ
成分が偏在していることを確認することができる。Company Auditor: When using this sample, the position where the sputtering time is 0 is certainly the interface where the thin film is in contact with the substrate, and there is C at the interface.
It can be confirmed that the components are unevenly distributed.
第１図は本発明による分析用試験片の作成工程を示す概
念図、
第２図は従来法によって基板上に形成された薄膜をその
表面からアルゴンガスエツチングとＡＥＳを用いて分析
した膜厚方向の組成分布図で、Ｂ。
Ｃｔ Ｄ ｔ Ｅは薄膜の構成元素、Ａは基板の構成元
素（Ｃ）である。
第３図は本発明によシ転写した薄膜についてアルゴンエ
ツチングとＡＥＳを用いて分析した場合の第２図と同様
な図で、Ｆは裏打ち材層の構成元素（Ｃ）である。Figure 1 is a conceptual diagram showing the process of creating an analytical test piece according to the present invention. Figure 2 is a film thickness direction analysis of a thin film formed on a substrate by a conventional method from its surface using argon gas etching and AES. In the composition distribution map of B. Ct D t E is a constituent element of the thin film, and A is a constituent element (C) of the substrate. FIG. 3 is a diagram similar to FIG. 2 in which a thin film transferred according to the present invention is analyzed using argon etching and AES, and F is a constituent element (C) of the backing material layer.
Claims (1)
む薄膜と基板が接する界面の上記薄膜の金属・非金属の
組成分布を分析する方法において、上記薄膜上に裏打ち
材層を付着させ、この裏打ち材層と上記薄膜とが一体に
なった試験片を上記基板から剥離し、この試験片上の上
記薄板について上記の組成分布を分析をすることを特徴
とする方法。 ２）上記薄膜上に保護膜を形成した後に、この保護膜上
に上記裏打ち材層を付着させ、これら裏打ち材層と保護
膜と上記薄膜とが一体になった試験片を上記基板から剥
離することを特徴とする特許請求の範囲第１項記載の方
法。 ３）上記組成分析がスパッタイオンエッチングとオージ
ェ電子分光法および／またはＸ線光電子分光法とを併用
して行われることを特徴とする特許請求の範囲第１項ま
たは第２項に記載の方法。[Scope of Claims] 1) A method for analyzing the composition distribution of metals and non-metals in the thin film formed on the substrate at an interface where the thin film containing two or more metals and non-metals is in contact with the substrate. A backing material layer is attached to the substrate, a test piece in which the backing material layer and the thin film are integrated is peeled off from the substrate, and the composition distribution of the thin plate on the test piece is analyzed. Method. 2) After forming a protective film on the above-mentioned thin film, the above-mentioned backing material layer is attached on this protective film, and a test piece in which the backing material layer, the protective film, and the above-mentioned thin film are integrated is peeled off from the above-mentioned substrate. A method according to claim 1, characterized in that: 3) The method according to claim 1 or 2, wherein the compositional analysis is performed using sputter ion etching in combination with Auger electron spectroscopy and/or X-ray photoelectron spectroscopy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62004086A JPS63172939A (en) | 1987-01-13 | 1987-01-13 | Analysis of composition of thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62004086A JPS63172939A (en) | 1987-01-13 | 1987-01-13 | Analysis of composition of thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63172939A true JPS63172939A (en) | 1988-07-16 |
Family
ID=11574976
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62004086A Pending JPS63172939A (en) | 1987-01-13 | 1987-01-13 | Analysis of composition of thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63172939A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008134242A (en) * | 2006-10-31 | 2008-06-12 | Semiconductor Energy Lab Co Ltd | Manufacturing method of analysis sample |
| JP2011247825A (en) * | 2010-05-28 | 2011-12-08 | Kyoto Univ | Method for manufacturing neutron mirror, and neutron mirror |
-
1987
- 1987-01-13 JP JP62004086A patent/JPS63172939A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008134242A (en) * | 2006-10-31 | 2008-06-12 | Semiconductor Energy Lab Co Ltd | Manufacturing method of analysis sample |
| JP2011247825A (en) * | 2010-05-28 | 2011-12-08 | Kyoto Univ | Method for manufacturing neutron mirror, and neutron mirror |
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