JPS58147943A - Electron gun - Google Patents

Electron gun

Info

Publication number
JPS58147943A
JPS58147943A JP16731982A JP16731982A JPS58147943A JP S58147943 A JPS58147943 A JP S58147943A JP 16731982 A JP16731982 A JP 16731982A JP 16731982 A JP16731982 A JP 16731982A JP S58147943 A JPS58147943 A JP S58147943A
Authority
JP
Japan
Prior art keywords
grid
diameter
lens
insulating support
electron gun
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16731982A
Other languages
Japanese (ja)
Inventor
Masahiro Kikuchi
正博 菊地
Yuzuru Kobori
小堀 譲
Kanemitsu Murakami
村上 兼光
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP16731982A priority Critical patent/JPS58147943A/en
Priority to CA000422243A priority patent/CA1196677A/en
Priority to GB08305131A priority patent/GB2115605B/en
Priority to DE19833306498 priority patent/DE3306498A1/en
Priority to FR8303173A priority patent/FR2522440B1/en
Publication of JPS58147943A publication Critical patent/JPS58147943A/en
Priority to US06/778,769 priority patent/US4649318A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/46Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
    • H01J29/48Electron guns
    • H01J29/488Schematic arrangements of the electrodes for beam forming; Place and form of the elecrodes

Abstract

PURPOSE:To reduce spherical aberration further by mechanically integrating the third grid and the fifth grid mutually and supporting the fourth grid through a window section using an insulating support rod in such a condition that the large diameter section of the fourth grid is arranged inside the fifth grid. CONSTITUTION:The fifth grid G5 and the third grid G3 are integrated mechanically and the fifth grid G5 is simultaneously retained by the support of the third grid G3 onto an insulating support rod without being supported by the insulating support rod 4 of the fifth grid 5. Besides, the fourth grid G4 is supported by the linear insulating support rod 4 through the window section 3 of the extended section 2 of the fifth grid together with the third, second, and first grids G3, G2, and G1. For this reason, the distance between the outside surfaces of the both opposed insulating support rods 4 can be made smaller than the diameter D3 of the fifth grid G5. As a result, the diameter D3 of the fifth grid G5 can be increased until the diameter sufficiently approaches the inner diameter D4 of a neck section 6 and the spherical aberration of the main electronic lens can be reduced.

Description

【発明の詳細な説明】 本発明は、低収差のユニポテンシャル型電子銃に係わる
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a unipotential electron gun with low aberrations.

ユニポテンシャル型電子銃は、高電流域におけるブルー
ミンク特性か優れているために、カラー受像管あるいは
プロジェクタ−管等に使用されている。ユニボテンシ、
トル型電子銃は、カソードIく、第1クリソ1−′(制
御電極)G1、第2グリンi(加速電極)G2、第3グ
リソト(第1陽極電極)G3、第4グリツド(集束電極
)04及び第5クリット−(第2陽極電極)G5の順序
で配列されζ成る。ごの電子銃において、螢光体スクリ
ーン曲−ヒに入射−」る電子ヒームのスポット径を小さ
くJるためには、電子レンズ特に第3クリツドG3、第
4クリツトG4及び第5グリソト(J5 ご構成する主
電子レンズの球面収差をできるたけ少くするごとが重要
ごある。その為には、主電子レンス糸の各グリッドの[
1径を大きくずれは良いものであるが、クリット「1径
を大きくするには電子銃を収容する陰極線管管体のネッ
ク部の内径を大きくするIν・要かlbる。しかし、ネ
ック部の内i4を人き(すると偏向ヨークの偏向感度が
低トする。
Unipotential electron guns are used in color picture tubes, projector tubes, etc. because they have excellent blooming characteristics in high current ranges. Unibotense,
The Tor type electron gun has a cathode I, a first grid 1-' (control electrode) G1, a second grid (acceleration electrode) G2, a third grid (first anode electrode) G3, and a fourth grid (focusing electrode). They are arranged in the order of 04 and 5th crit-(second anode electrode) G5 and consist of ζ. In order to reduce the spot diameter of the electron beam incident on the phosphor screen in the electron gun of It is important to reduce the spherical aberration of the main electron lens as much as possible.To do this, it is necessary to
It is good to have a large deviation from the diameter of 1, but in order to increase the diameter by 1, the inner diameter of the neck of the cathode ray tube housing the electron gun must be increased. (The deflection sensitivity of the deflection yoke decreases.)

一方、第1図にポずようにユニポテンシャルレンズが、
第3グリフ 1’ G z及び第4グリソl” C4か
らなる減速レンズ(Lens 1 )と第4グリフFG
4及び第5グリソ[G5からなる加速レンズ(Lens
 2 )とより構成させられている場合におい′ζは、
互に電子レンズ作用領域が分離できるので、主電子レン
ズ糸の収差係数を減速レンズ(Lens 1 )と加速
レンズ(Lens2)とに分けて考えることが出来る。
On the other hand, as shown in Figure 1, the unipotential lens is
A deceleration lens (Lens 1) consisting of the third glyph 1' G z and the fourth glyph C4 and the fourth glyph FG
Accelerating lens (Lens) consisting of 4th and 5th Gliso [G5
2), then the smell ′ζ is
Since the electron lens action areas can be separated from each other, the aberration coefficient of the main electron lens thread can be considered separately for the deceleration lens (Lens 1 ) and the acceleration lens (Lens 2).

この収差係数は、減速レンズが小さく、加速レンズが大
きいことがわかっている。従5.で、加速レンズの収差
量を改善し、加速レンズをさらにレンズ作用の弱いレン
ズにずれば全体のユニボテンシートルレンスの収差量は
改善される。
It is known that this aberration coefficient is small for the deceleration lens and large for the acceleration lens. 5. If the amount of aberration of the accelerating lens is improved and the accelerating lens is further shifted to a lens with a weaker lens effect, the amount of aberration of the entire unipotency toll lens can be improved.

第2図は上述の主電子レンズ糸の収差係数が減速レンズ
と加速レンズとに分げて考え・うることに基づいて特願
昭52−155881号において提案された低収差の電
子銃である。この電子銃は、カソードK、第1グリツド
G+、第2グリツドG2、第3クリツド03、第4グリ
ソトG4及び第5グリツドG5が順次配列され、第3グ
リツドG3及び第5グリツドG5に陽極電圧■6が与え
られ、第4グリツドG4にフォーカス電圧V、が与えら
れて第3クリツトG3〜第5グリツドG5によ−、てユ
ニポテンシャル型の主電子レンズ系が構成されて成る電
r−銃において、」:電子レンズ糸を構成する前段の減
速レンズ(Lensl)の電子レンズl口径I)1(即
ち第3グリツドG3と第4クリツトG4の各対向端の口
径)を、後段の加速レンズ(Lens2)の電子レンス
ロ径D2 (即ち第4クリツドG4と第5グリツドG5
の各対向端の口径)より小に選定L7(D2 <01)
 、且つ第4グリツドG4の長さ7!l+ +7!2)
を前段及び1&段のレンズ(Lensl)及び(1、e
ns2)の電子レンズ作用領域が分離できる長さに選び
、主電子レンズ基の収差係数を小さくしたものである。
FIG. 2 shows an electron gun with low aberrations proposed in Japanese Patent Application No. 155881/1983 based on the fact that the aberration coefficient of the main electron lens thread mentioned above can be considered and divided into the deceleration lens and the acceleration lens. In this electron gun, a cathode K, a first grid G+, a second grid G2, a third grid 03, a fourth grid G4, and a fifth grid G5 are arranged in sequence, and an anode voltage of 6 is applied, a focus voltage V is applied to the fourth grid G4, and a unipotential type main electron lens system is constructed by the third grid G3 to the fifth grid G5. , ": The electron lens l aperture I)1 of the front stage deceleration lens (Lensl) constituting the electron lens thread (i.e. the aperture of each opposing end of the third grid G3 and the fourth crit G4) is replaced with the rear stage acceleration lens (Lens2). ) of the electron lens throttle diameter D2 (i.e., the fourth grid G4 and the fifth grid G5)
diameter of each opposing end) is selected to be smaller than L7 (D2 <01)
, and the length of the fourth grid G4 is 7! l+ +7!2)
The front and 1 & stage lenses (Lensl) and (1, e
The length is selected so that the electron lens action area of ns2) can be separated, and the aberration coefficient of the main electron lens group is made small.

従来一般に第1グリソト01〜第5グリツドG5の各グ
リッドは、共通の絶縁支持棒(所dWビープインクガラ
ス)によって支持され−(いる。従っ゛ζ絶縁支持棒に
よって支持された電子銃をネック部内に収容する場合、
絶縁支持棒弁を見込んで、グリッドのL]径の大きさに
は限度がある。例えば内径が29鶴のネック部内に収容
する場合にはグリッドの有効内径は18i々14+u稈
度であった。第2図の電子銃はこのような状況におい゛
(減速レンズ(Lens 1 )の口(4Diを小さく
することにより収差係数を小さくしようとするものであ
った。
Conventionally, each of the first to fifth grids G5 is generally supported by a common insulating support rod (dW beep ink glass).Therefore, the electron gun supported by the insulating support rod is placed inside the neck. If accommodated in
To allow for insulated support rod valves, there is a limit to the size of the grid L] diameter. For example, when the grid is housed in a neck with an inner diameter of 29 tsuru, the effective inner diameter of the grid is 18i/14+u culm. In such a situation, the electron gun shown in FIG. 2 was designed to reduce the aberration coefficient by reducing the aperture (4Di) of the deceleration lens (Lens 1).

本考案を適用°4−る電子銃は、」一連の点に鑑の、さ
らに球面収差を小さくした構成を採るものである。
The electron gun to which the present invention is applied employs a configuration in which spherical aberration is further reduced in view of the above points.

以り本考案による電子銃につい′C説明する。Hereinafter, the electron gun according to the present invention will be explained.

第3図はその基本例を示ずユニポテンシャル型の電子銃
でありカソードI(、第1クリソF G 1〜第5クリ
ツドG5が順次配列され、第3グリソFG3及び第5グ
リツドG5に電圧の例えば陽極電圧■8かり、えられ、
第4グリソ]゛G1にはこれより十分低いフォーカス塩
1+h V pが与えられて第3グリツドGa”第5グ
リツドG5によってユニポテンシャル型の4−電子レン
ズ基が構成され−C成る。
Fig. 3 does not show a basic example, but is a unipotential type electron gun in which cathode I (first grid FG1 to fifth grid G5 are arranged in sequence, and voltage is applied to third grid FG3 and fifth grid G5). For example, anode voltage ■8 is obtained,
A focus salt 1+h V p which is sufficiently lower than this is given to the fourth grid G1, and a unipotential type 4-electron lens group is formed by the third grid Ga and the fifth grid G5, and is composed of -C.

本発明においても、第3グリツドG3と第4クリツドG
4とによっ°ζ減速型の前段の電子レンズ(1,ens
 1 )が構成され、第4グリツドG4と第5クリツド
G・iとによ−、゛ζ加速型の(ル段の電子レンズ(L
ens 2 )が構成されるが、前段の電子し7ス(L
ens l )と、後段の電子レンズ(Lens 2 
)とを、!1.に電子作用領域が分離されるように第4
グリソ1′G 4の長さlを設定し、前段の電子レンズ
(Lensl)の電子レンスロ径を後段の電子レンズ(
Lens2)の電子レンズ口径より小に選定するととも
に、1&段の電子レンズ(Lens2)においてその第
5グリツドG6の口径を第4グリツドG4の口径より大
に選定する。即ち、第4グリツドG4の第3グリツドG
3側の口径D1より第4グリツドG4の第5グリツド側
の口径D2を大にし、さらに第5グリツドG5の口径D
3を大にする(Ds < D2 < 1)3)。また、
前段の電子レンズ(Lens I )と後段の電子レン
ズ(Lens2)とが、tJ、に電子レンズ作用領域が
分離されるように、第4クリツト’ G 4の長さ!(
I!1+J2)を第3グリツドG3の口径、従って第4
グリツドG4の小径部の口径D1の1.5倍以上、即ち
1≧ 1.5rl+に選定する。ごの構成によって、加
速型の後段の市、子レンズ(’Lens2)の収差量が
改善され、全体の−1,電子レンズ基の収v晴がさらに
改善される。
Also in the present invention, the third grid G3 and the fourth grid G3
4 and °ζ deceleration type front-stage electron lens (1, ens
1) is constructed, and the fourth grid G4 and the fifth grid G.
ens 2) is configured, but the previous stage electronic 7s (L
ens l) and the subsequent electronic lens (Lens 2
) and! 1. The fourth
Set the length l of Griso 1'G4, and change the electron lens diameter of the front electron lens (Lensl) to the rear electron lens (Lensl).
The aperture of the fifth grid G6 is selected to be smaller than the aperture of the fourth grid G4 in the 1st & stage electron lens (Lens2). That is, the third grid G of the fourth grid G4
The diameter D2 on the fifth grid side of the fourth grid G4 is made larger than the diameter D1 on the third side, and the diameter D of the fifth grid G5 is further increased.
Increase 3 (Ds < D2 < 1) 3). Also,
The length of the fourth crit' G 4 is such that the front electron lens (Lens I) and the rear electron lens (Lens 2) have their electron lens action areas separated by tJ. (
I! 1+J2) is the diameter of the third grid G3, therefore the fourth
The diameter is selected to be at least 1.5 times the diameter D1 of the small diameter portion of the grid G4, that is, 1≧1.5rl+. With this configuration, the amount of aberration of the child lens ('Lens 2) in the latter stage of the acceleration type is improved, and the overall aberration of the -1 electron lens group is further improved.

第6図は、本発明による電子銃と従来の電子銃との球面
収差係数について比較した曲線図である。
FIG. 6 is a curve diagram comparing the spherical aberration coefficients of an electron gun according to the present invention and a conventional electron gun.

同図におい゛ζ縦軸は球面収差係数に係わる量g3(こ
れについてはト記の収差係数の関係式に示す)をとり、
横軸に物点(クロスオーバ点)側の焦点距離f1をとっ
て示す。曲線(1)は第4図で示す第3グリソトG3、
第4グリツドG<及び第5グリツドG5の各口径をtL
に同じにし、第4グリソF’ G 4の長さA=21.
0關とした一般的ユニポテンシャル型電子銃の場合であ
る。曲線(U)は、第5図に示した後段の電子レンズ(
Lens2>の口14D2 (第5グリツドG5と第4
グリツドG4の第5グリツド側の口径が互に等径である
)を前段の電子レンズ(Lensl)の[1径D1より
人に選定し、  D+=13.81第、  I)2  
 =  16.4m諷、  12  =  28.1m
m。
In the same figure, the vertical axis of ζ represents the quantity g3 related to the spherical aberration coefficient (this is shown in the relational expression for the aberration coefficient described above),
The focal length f1 on the object point (crossover point) side is plotted on the horizontal axis. Curve (1) is the third Grisotho G3 shown in FIG.
Each diameter of the fourth grid G< and the fifth grid G5 is tL
and the length A of the fourth gliso F' G 4 = 21.
This is the case of a general unipotential electron gun with a zero angle. The curve (U) is the latter electron lens (
Lens2> mouth 14D2 (5th grid G5 and 4th grid
The apertures on the 5th grid side of grid G4 are the same diameter) are selected from the [1 diameter D1 of the front stage electronic lens (Lensl), D+=13.81th, I)2
= 16.4m, 12 = 28.1m
m.

62=IOmmとした場合である。曲線(III A 
)、(■8)、(m c )は夫々第3図に示したユニ
ポテンシャル型電子銃で夫々β−□28.1mm、33
.1朋、38.1菖1、とした場合である(但し、I)
+=13.8墓鵬、D 2−16.4mm、l) 3−
22.(b+i、、(12−10+u一定)。
This is the case where 62=IOmm. Curve (III A
), (■8), and (m c ) are β-□28.1 mm and 33 mm, respectively, for the unipotential electron gun shown in Figure 3.
.. This is the case where 1 ho, 38.1 iris 1, (however, I)
+=13.8 Tomohei, D 2-16.4mm, l) 3-
22. (b+i,, (12-10+u constant).

なお、収差係数の関係式を第7図を参照し′ζボず。収
差量(結像面(1)でのヒームスボソト半1ψ)Δrは
、球面収差係数をC5、レンズの倍率をM、ヒームのり
「Iスオーハ点(物点)からの最大発散角の半角をC0
とすると、 Δr−MCSα。j でり、えられる。そして第6図で与えたC3は1・記に
ボず厨をパっ。
In addition, please refer to FIG. 7 for the relational expression of the aberration coefficient. The amount of aberration (Heems Bosoto half 1ψ at the imaging plane (1)) Δr is the spherical aberration coefficient C5, the magnification of the lens M, and the half angle of the maximum divergence angle from the Heems glue point (object point) C0.
Then, Δr−MCSα. j It is possible to obtain. And the C3 given in Figure 6 is 1.

g3°CSO/ f2 Δr二(Lα−1勺 C3 但し、 「、は像側の焦点!i′L!l1lI、Lは物
点から結像面までの距離である。
g3°CSO/ f2 Δr2(Lα−1勺C3 However, , is the focal point on the image side!i'L!l1lI, and L is the distance from the object point to the imaging plane.

上記の第6図で明らかなように第3図で示した電子銃は
、第5図で不ず従来の電子銃よりもさらに良好な収差係
数を示し、約15%〜20%の収差係数が改善されCい
る。また、本発明におい”ζ、第4グリソFC4を第5
グリツド C5内に入れて市ね合一けても収差量はほと
んど変化しないことも実験で確かめられている。
As is clear from Fig. 6 above, the electron gun shown in Fig. 3 clearly shows a better aberration coefficient than the conventional electron gun in Fig. 5, with an aberration coefficient of about 15% to 20%. It has been improved. In addition, in the present invention, "ζ", the fourth Gliso FC4 is replaced with the fifth Gliso FC4.
It has also been confirmed through experiments that the amount of aberration hardly changes even if the lens is placed in Grid C5 and assembled together.

次に本発明の具体構成を第8図及び第9図を参照して説
明する。この場合においても、カッ−]K、第1グリツ
ドG1〜第5グリツドG5が同軸心上に順次配列される
が、特に口径D3を有する第5クリソ1′G5と口径D
1を有する第3グリツドG3とを機械的一体構造(=一
体成型、もしくは第3クリツドG3と第5グリソt” 
c sを溶接等で一体化する)となし、第4クリッドG
−+を一体化した第5グリソF’ G sの内部に配す
るようにする。
Next, a specific configuration of the present invention will be explained with reference to FIGS. 8 and 9. In this case as well, the first grid G1 to the fifth grid G5 are sequentially arranged coaxially, but in particular, the fifth grid 1'G5 having the diameter D3 and the fifth grid G5 having the diameter D3 are arranged sequentially on the same axis.
The third grid G3 and the fifth grid G3 have a mechanically integrated structure (=integral molding, or the third grid G3 and the fifth grid t"
c s is integrated by welding etc.), and the 4th clid G
-+ is arranged inside the integrated fifth Gliso F' G s.

この場合、実質的な第5クリツドG5より等径で廷臣し
て第3クリソF’ G 3側に接縁・される延長部(2
)においては、相対向する位置において夫々窓部(3)
を形成する。従って、この延長部(2)は実質的には第
5グリツドG5と第3クリツドG3を電気的に接続する
り一重部に相当する。そして、口径D1を有する小径部
と[1径り、を有する大径部からなる第4グリソF’ 
G 4はその大径部が実質的な第5クリツドG5内に入
り込め、小径部が窓部(3)に臨むように第3グリツド
G3と対向するように配置する。この第4グリツド’ 
G−1の小径部と第3グリツドG3によって前段の電子
レンズ基(Lensl)が形成され、第4グリツドG4
の大径部と第5クリノFG6によって後段の電子レンズ
系(Lens2)が形成される。この状態で第1グリソ
ト’ G s〜第4グリッドG4を共通の絶縁支持棒(
4)によって支持する。第4グリツドG4の支持は窓部
(3)に臨む部分において行う。なお、第5グリツドG
5の後端部にはケソターシールド用のシールド板(5)
が設LJられる。従って第4グリツドG1とシールド扱
(5)間の間隔13は、第4グリツドG1とシールドJ
h、(5)間で電子レンズが構成されないvllfil
l(例えばI!3/D3と0.57)に選ばれる。この
ように構成された電子銃は陰極線管体のネック部(6)
内に配置される。ごごで、第5グリソI” G 6のL
l(苓D3はネック部(6)の内径をD4とするときD
4 >D3 >0.65D4となるように選び(ηる。
In this case, an extension part (2
), the windows (3) are located at opposite positions.
form. Therefore, this extension part (2) substantially corresponds to a single part that electrically connects the fifth grid G5 and the third grid G3. and a fourth gliso F' consisting of a small diameter part having a diameter D1 and a large diameter part having a diameter of [1].
The grid G4 is arranged so that its large diameter part can fit into the substantial fifth grid G5, and its small diameter part faces the window part (3) so as to face the third grid G3. This fourth grid'
A front-stage electron lens group (Lensl) is formed by the small diameter part of G-1 and the third grid G3, and the fourth grid G4
A rear-stage electronic lens system (Lens2) is formed by the large diameter portion of the lens and the fifth clino FG6. In this state, connect the first grid Gs to the fourth grid G4 with a common insulating support rod (
4). The fourth grid G4 is supported at the portion facing the window (3). In addition, the fifth grid G
At the rear end of 5 is a shield plate (5) for the Kesotar shield.
LJ is established. Therefore, the distance 13 between the fourth grid G1 and the shield (5) is the same as that between the fourth grid G1 and the shield J
vllfil in which no electronic lens is configured between h and (5)
l (for example, I!3/D3 and 0.57). The electron gun configured in this way has a neck part (6) of the cathode ray tube body.
placed within. Gogode, 5th Griso I” G 6 L
l (D3 is D when the inner diameter of the neck part (6) is D4)
4 >D3 >0.65D4 (η).

この構成によれは、第5クリツドG5が第3グリソIG
3と機械的に一体となり、絶縁支持棒(7I)に支持さ
れない状態にあるので、第5クリツトG5のr1径T’
J3をネック部(6)ノ内?4 D 4 ニiFr −
j (はどに大きくできる。これが為、後段の電子レン
ズ系(Lens2)においては第5グリソf” Is 
5の口i41) 3を第4グリツドG4の口径D2より
大きくすることができ、ネック部(6)の内j¥D4を
変えることなく、さらに主電子レンス糸の球面収差を小
さくすることができる。
According to this configuration, the fifth clitoris G5 is connected to the third glisso IG.
3 and is not supported by the insulating support rod (7I), the r1 diameter T' of the fifth crit G5
J3 inside the neck part (6)? 4 D 4 NiFr −
j (can be made larger at the end. For this reason, in the latter stage electronic lens system (Lens 2), the fifth gliso f" Is
5, i41) 3 can be made larger than the aperture D2 of the fourth grid G4, and the spherical aberration of the main electron lens thread can be further reduced without changing the diameter D4 of the neck part (6). .

第11図は、上記の本発明により電子銃と、第4図に示
す従来のユニポテンシャル型電子銃との電流量(mA)
と螢光面上でのビームスポットの平均径(mm)の関係
をボした曲線図である。同図中、曲線(IV)は従来の
電子銃、曲線(V)は本発明の電子銃である。この第1
1図から明らかなように全電流域で大Illにビームス
ポットが改善される。
FIG. 11 shows the amount of current (mA) between the electron gun according to the present invention and the conventional unipotential electron gun shown in FIG.
It is a curve diagram showing the relationship between the average diameter (mm) of the beam spot on the fluorescent surface and the average diameter (mm) of the beam spot on the fluorescent surface. In the figure, curve (IV) is the conventional electron gun, and curve (V) is the electron gun of the present invention. This first
As is clear from FIG. 1, the beam spot is greatly improved in the entire current range.

尚、後段の電子レンズ(Lens2)を電界延長型レン
スとなし最終電極の内径を人となす電子銃もiJ能であ
り、この場合も球面収差をより小さくすることができる
Incidentally, an electron gun in which the subsequent electron lens (Lens 2) is an electric field extension type lens and the inner diameter of the final electrode is rounded is also an iJ type, and in this case as well, the spherical aberration can be made smaller.

上述せる如く本発明においては、従来の互に電子レンス
作用領域が分離された前段の電子レンズ系の電子レンス
ロ径を単に後段の電子レンズ系の1 電子レンスロ経より小に選んだ電子銃まり史にその球面
収差が小さくなるもので、従っζカラー受像管あるいは
プロジェクタ−管等に適用して好適ならしめるものであ
る。
As mentioned above, in the present invention, the electron lens diameter of the front-stage electron lens system in which the electron lens action areas are separated from each other is simply selected to be smaller than the electron lens diameter of the rear-stage electron lens system. In addition, the spherical aberration is reduced, making it suitable for application to ζ color picture tubes, projector tubes, and the like.

そして、特に本発明では第8図及び第9図に示す如く第
5グリツドG5と第3グリソlG3が機械的に一体化さ
れ、第5グリツドG5が絶縁支持棒(4)に°ζ支持さ
れることなく第3グリツドG3の絶縁支持棒−の支持に
て同時に保持され、しかも第4グリソl’  G4が第
5グリソトの延長部(2)の窓部(3)を通して第3、
第2及び第1グリツドG3、G2及びG1と共に直線状
の絶縁支持棒(4)にて支持される。この為に、相対す
る両絶縁支持棒(4)の外側面間の距割が第5グリソ]
−G5の[1径D3より小さくすることがごき、したが
って第5グリツドG5の口径1)3をネック部(6)の
内径D4に充分近づくまで大きくすることがCき、さら
に主電子レンス系の球面収差を小さくするごとができる
In particular, in the present invention, as shown in FIGS. 8 and 9, the fifth grid G5 and the third grid G3 are mechanically integrated, and the fifth grid G5 is supported by the insulating support rod (4). The fourth grid G4 is simultaneously held by the support of the insulating support rod of the third grid G3 without any problems, and the fourth grid G4 passes through the window (3) of the extension (2) of the fifth grid G3 to the third grid G3.
The second and first grids G3, G2 and G1 are supported by straight insulating support rods (4). For this reason, the distance between the outer surfaces of both opposing insulating support rods (4) is 5th gris.]
- The diameter D3 of the fifth grid G5 can be made larger than the diameter D3 of the fifth grid G5, and the diameter D3 of the fifth grid G5 can be increased until it approaches the inner diameter D4 of the neck (6), and the main electron lens system The spherical aberration can be reduced.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明に供する電子銃の主型イレンス2 糸の部分をボず断面図、第2図は従来のユニポテンシャ
ル型電子銃の例を示す断面図、第3図は本発明による電
子銃の基本例を示す断面図、第4図及び第5図は従来例
の電子銃の要部の断面図、第6図は本発明と従来の電子
銃におりる球面収差係数と焦点距離に関する曲線図、第
7図は収差係数の関係式を求めるための説明図、第8図
及び第9図は本発明による電子銃の長体的構成を示す平
面図及びその断面図、第10図は本発明と従来の電子銃
の電流量とビームスポット径との関係をボず曲線図ごあ
る。 Kはカソード、G1−G5は第1〜第5クリツトである
。 3 第1図 第2図 槓し〉モ 第3図 第4図 焦、!、距離f1 第8図 第9図 第10図 電流f   7F1A 手続補正書 昭和57年12  月27日 1、事件の表示 昭和57年特許願第 167319号 2、発明の名称 電子鏡 3、補正をする者 事件との関係   特許出願人 住所 東京部品用凶兆品用6丁目7番35号名称421
8)  ソニー株式会社 代表取締役 大 賀 典 雄 4、代 理 人 東京都新宿区西新宿1丁目8番1号(
新宿ビル)置東京(03)343−5821 (代表)
6、補正により増加する発明の数 以  上
Fig. 1 is a cross-sectional view of the main electron gun according to the present invention, with the thread part removed, Fig. 2 is a cross-sectional view showing an example of a conventional unipotential electron gun, and Fig. 3 is a cross-sectional view of the electron gun according to the present invention. 4 and 5 are cross-sectional views showing the main parts of a conventional electron gun, and FIG. 6 is a cross-sectional view showing a basic example of a gun, and FIG. FIG. 7 is an explanatory diagram for determining the relational expression of aberration coefficients, FIGS. 8 and 9 are plan views and cross-sectional views showing the longitudinal structure of the electron gun according to the present invention, and FIG. There is a curve diagram showing the relationship between the current amount and the beam spot diameter of the present invention and the conventional electron gun. K is a cathode, and G1-G5 are first to fifth crits. 3 Fig. 1, Fig. 2, 〉Mo Fig. 3, Fig. 4, ! , Distance f1 Figure 8 Figure 9 Figure 10 Current f 7F1A Procedural amendment December 27, 1982 1, Display of the incident 1982 Patent Application No. 167319 2, Title of the invention Electronic mirror 3, Make the amendment Relationship with the case Patent applicant address Tokyo Parts Co., Ltd. 6-7-35 Name 421
8) Sony Corporation Representative Director Norio Ohga 4, Agent 1-8-1 Nishi-Shinjuku, Shinjuku-ku, Tokyo (
Shinjuku Building) Tokyo (03) 343-5821 (Representative)
6. The number of inventions increased by amendment or more

Claims (1)

【特許請求の範囲】[Claims] ユニポテンシャル型電子銃において、第4クリツドの第
5クリッド例の口径が第3クリツト′側の口径より大に
選定されると共に、さらに前記第5グリツドの口径か前
記第4クリツトの口径より大に選定され、前記第3グリ
ツドと前記第5クリツドとが該第5クリツトより等径で
延長され窓部が形成された延長部を介して互に機械的に
一体化され、前記第4クリツトの大口径側を前記第5ク
リット内部に配した状態で前記第4グリソトが前記窓部
を通じて絶縁支持棒にて支持されて成る電子銃。
In the unipotential electron gun, the diameter of the fifth grid of the fourth grid is selected to be larger than the diameter of the third grid' side, and further, the diameter of the fifth grid is selected to be larger than the diameter of the fourth grid. The third grid and the fifth grid are mechanically integrated with each other through an extension portion extending from the fifth grid by an equal diameter and having a window portion formed therein, An electron gun in which the fourth gris is supported by an insulating support rod through the window with its caliber side disposed inside the fifth clit.
JP16731982A 1982-02-26 1982-09-25 Electron gun Pending JPS58147943A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP16731982A JPS58147943A (en) 1982-09-25 1982-09-25 Electron gun
CA000422243A CA1196677A (en) 1982-02-26 1983-02-23 Electron gun
GB08305131A GB2115605B (en) 1982-02-26 1983-02-24 Electron guns
DE19833306498 DE3306498A1 (en) 1982-02-26 1983-02-24 ELECTRONIC CANNON
FR8303173A FR2522440B1 (en) 1982-02-26 1983-02-25 ELECTRON CANON
US06/778,769 US4649318A (en) 1982-02-26 1985-09-23 Electron gun with low spherical aberration

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16731982A JPS58147943A (en) 1982-09-25 1982-09-25 Electron gun

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP57031351A Division JPS58147942A (en) 1982-02-26 1982-02-26 Electron gun

Publications (1)

Publication Number Publication Date
JPS58147943A true JPS58147943A (en) 1983-09-02

Family

ID=15847539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16731982A Pending JPS58147943A (en) 1982-02-26 1982-09-25 Electron gun

Country Status (1)

Country Link
JP (1) JPS58147943A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4722168U (en) * 1971-04-10 1972-11-13
JPS509851U (en) * 1973-05-24 1975-01-31
JPS54157076A (en) * 1978-05-31 1979-12-11 Sony Corp Electron gun

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4722168U (en) * 1971-04-10 1972-11-13
JPS509851U (en) * 1973-05-24 1975-01-31
JPS54157076A (en) * 1978-05-31 1979-12-11 Sony Corp Electron gun

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