JPS58147942A - Electron gun - Google Patents

Electron gun

Info

Publication number
JPS58147942A
JPS58147942A JP57031351A JP3135182A JPS58147942A JP S58147942 A JPS58147942 A JP S58147942A JP 57031351 A JP57031351 A JP 57031351A JP 3135182 A JP3135182 A JP 3135182A JP S58147942 A JPS58147942 A JP S58147942A
Authority
JP
Japan
Prior art keywords
grid
lens
diameter
electron
electron gun
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57031351A
Other languages
Japanese (ja)
Other versions
JPH0379813B2 (en
Inventor
Masahiro Kikuchi
正博 菊地
Yuzuru Kobori
小堀　譲
Kanemitsu Murakami
村上　兼光
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP57031351A priority Critical patent/JPS58147942A/en
Priority to CA000422243A priority patent/CA1196677A/en
Priority to KR1019830000761A priority patent/KR900009078B1/en
Priority to GB08305131A priority patent/GB2115605B/en
Priority to DE19833306498 priority patent/DE3306498A1/en
Priority to FR8303173A priority patent/FR2522440B1/en
Publication of JPS58147942A publication Critical patent/JPS58147942A/en
Priority to US06/778,769 priority patent/US4649318A/en
Publication of JPH0379813B2 publication Critical patent/JPH0379813B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
    • H01J29/48—Electron guns
    • H01J29/488—Schematic arrangements of the electrodes for beam forming; Place and form of the elecrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
    • H01J29/48—Electron guns
    • H01J29/50—Electron guns two or more guns in a single vacuum space, e.g. for plural-ray tube

Abstract

PURPOSE:To obtain an electron gun with more reduced spherical aberration in an electronic lens system at the rear stage of a low aberration unipotential type electron gun by selecting the diameter of the fifth grid larger than that of the fourth grid. CONSTITUTION:Since the fifth grid G5 is mechanically integrated with the third grid G3 or the fourth grid G4 and is not supported by an insulating support rod 4, the diameter D3 of the fifth grid G5 can be increased as said diameter approaches the inner diameter D4 of a neck section 6. As a result, in an electronic lens system (Lens 2) at the rear stage, the diameter D3 of the fifth grid G5 can be increased larger than the diameter D2 of the fourth grid G4 and the spherical aberration of the main electronic lens can be reduced without changing the inner diameter of the neck section 6.

Description

【発明の詳細な説明】 本発明は、低収差のユニポテンシャル型電子ａに係わる
。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a unipotential electron a with low aberration.

ユニポテンシャル型電子銃は、高電流域におけるブルー
ミング特性が優れているために、カラー受像管あるいは
プロジェクタ−管等に使用さｔている。ユニポテンシャ
ル型電子鏡は、カソードに１第１グリツド（制御電極）
Ｇ１、第２グリツド（加速電極）　Ｇ２、第３グリツド
（第１陽極′電極）　０３、第４グリツド（集束電極）
　Ｇ４及び第５グリツド（第２陽極電極）　Ｇｓの順序
で配列されて成る。この電子銃において、螢光体スクリ
ーン面上に入射する電子ビームのスポット径を小さくす
るためには、′電子レンズ特に第３グリツドＧ３、第４
グリツドＧ４及び第５グリツドＧ５で構成する主電子レ
ンズの球面収差をできるたけ少くすることが重要である
。その為には、主電子レンズ系の各グリッドの口径を大
きくすれば良いものであるが、グリッド口径を大きくす
るには電子銃を収容する陰極線管体のネック部の内径を
大きくする必要かある。Unipotential electron guns are used in color picture tubes, projector tubes, and the like because they have excellent blooming characteristics in a high current range. A unipotential electron mirror has a first grid (control electrode) on the cathode.
G1, 2nd grid (acceleration electrode) G2, 3rd grid (first anode' electrode) 03, 4th grid (focusing electrode)
G4 and the fifth grid (second anode electrode) are arranged in the order of Gs. In this electron gun, in order to reduce the spot diameter of the electron beam incident on the phosphor screen surface, it is necessary to
It is important to minimize the spherical aberration of the main electron lens constituted by the grid G4 and the fifth grid G5. To achieve this, it is sufficient to increase the aperture of each grid in the main electron lens system, but in order to increase the aperture of the grid, it is necessary to increase the inner diameter of the neck of the cathode ray tube housing the electron gun. .

しかし、ネック部の内径を犬きくすると偏向ヨークの偏
向感度が低下する。However, if the inner diameter of the neck portion is increased, the deflection sensitivity of the deflection yoke decreases.

一方、第１図に示すようにユニポテンシャルレンズが、
第３グリツドＧ３及び第４グリツドｑ４かうなる減速レ
ンズ（Ｌｅ’ｎｓ　１　）と第４グリツドｑ４及び第５
グリツドＧ５かうなる加速レンズ（Ｌｅｎｓ　２　）と
より構成さぜられている場会においては、互に亀子レン
ズ作用領域が分離できるので、主電子レンズ系の収差係
数を減速レンズ（Ｌｅｎｓ　１　）と加速レンズ（Ｌｅ
ｎｓ　２　）とに分けて考えることか出来る。On the other hand, as shown in Figure 1, the unipotential lens
The third grid G3 and the fourth grid q4 have a deceleration lens (Le'ns 1) and the fourth grid q4 and the fifth grid
In cases where grid G5 is configured with an accelerating lens (Lens 2), the Kameko lens active areas can be separated from each other, so the aberration coefficient of the main electron lens system can be adjusted to the decelerating lens (Lens 1) and the accelerating lens. Lens (Le
ns 2 ) and can be considered separately.

この収差係数は、減速レンズが小さく、加速レンズが大
きいことがわがっている。従って、加速レンズの収差量
を改善し、加速レンズをさらにレンズ作用の弱いレンズ
にすれば全体のユニポテンシャルレンズの収差量は改善
される。It is known that this aberration coefficient is small for the deceleration lens and large for the acceleration lens. Therefore, by improving the amount of aberration of the accelerating lens and making the accelerating lens a lens with a weaker lens effect, the amount of aberration of the entire unipotential lens can be improved.

第２図は上述の主電子レンズ系の収差係数が減速レンズ
と刀Ｕ速レンズとに分けて考えうろことに基づいて特願
昭５２−１５５８８１号において提案された低収差の電
子銃である。この電子銃は、カソード１ぐ、第１グリツ
ド０１、第２グリツドＧ２　、第３グリツドｑ３　、第
４グリツドＧ４及び第５グリツドｑ５がノ貝次配列され
、第３グリツドＧ３及び第５グリツドＧ５に陽極電圧■
Ａが与えられ、第４グリツド０４に７．ｔ’−カス電圧
ＶＦが与えられて第３グリツド０３〜第５グリツドＧ５
によってユニポテンシャルｕｆ７）主電子レンズ系が構
成されて成る電子銃において、主電子レンズ系を構成す
る前段の減速レンズ（Ｌｅｎｓ　１　）の電子レンズ口
径Ｄｓ　（即ち第３グリツドＧ３と第４グリツドＧ４の
各対向端の１０径）を、後段の加速レンズ（Ｌｅｎｓ　
２　）の電子レンズ口径Ｄ２（即ち第４グリツド０４と
第５グリツドｑ５の各対向端の口径）より小に選定しく
Ｄ２＜ＤＩ）、且つ第４グリツドＧ４の長さε（Ｑｌ＋
ｈ）を前段及び後段のレンズ（Ｌｅｎｓ　１　）及び（
Ｌｅｎｓ　２　）の電子レンズ作用領域が分離できる長
さに選び、主電子レンズ系の収差係数を小さくしたもの
である。従来一般に第１グリツドＧｌ〜第５グリツドＧ
５の各グリッドは、共通の絶縁支持棒（新開ビーディン
グガラス）によって支持されている。従って絶縁支持棒
によって支持された電子銃をネック部内に収容する場合
、絶縁支持棒弁を見込んで、グリッドの口径の大きさに
は限度がある。例えば内径が２９ｍｍのネック部内に収
容する場合にはグリッドの有効内径は筒４１４ｍｍ８度
であった。第２図の電子銃はこのような状況において減
速レンズ（Ｌｅｎｓ　１　）の口径Ｄｌを小さくするこ
とにより収差量ａを小さくしようとするものであった。FIG. 2 shows an electron gun with low aberrations proposed in Japanese Patent Application No. 155881/1983 based on the fact that the aberration coefficients of the above-mentioned main electron lens system can be divided into a deceleration lens and a U-speed lens. In this electron gun, a cathode 1, a first grid 01, a second grid G2, a third grid q3, a fourth grid G4, and a fifth grid q5 are arranged in the same order, with the third grid G3 and the fifth grid G5. Anode voltage■
A is given and the fourth grid 04 is given 7. The t'-cus voltage VF is applied to the third grid 03 to the fifth grid G5.
In an electron gun in which the main electron lens system is constructed by unipotential uf7), the electron lens aperture Ds of the front-stage deceleration lens (Lens 1) constituting the main electron lens system (i.e., the diameter of the third grid G3 and the fourth grid G4) is 10 diameter) at each opposing end, and the latter acceleration lens (Lens).
2) is selected to be smaller than the electron lens aperture D2 (that is, the aperture of each opposing end of the fourth grid 04 and the fifth grid q5), and the length ε (Ql+
h) as the front and rear lenses (Lens 1) and (
The length is selected so that the electron lens action area of Lens 2) can be separated, and the aberration coefficient of the main electron lens system is made small. Conventionally, the first grid Gl to the fifth grid G
Each grid of 5 is supported by a common insulating support rod (Shinkai Beading Glass). Therefore, when an electron gun supported by an insulated support rod is accommodated in the neck portion, there is a limit to the size of the aperture of the grid, taking into account the insulated support rod valve. For example, when the grid was accommodated in a neck portion with an inner diameter of 29 mm, the effective inner diameter of the grid was 414 mm and 8 degrees. The electron gun shown in FIG. 2 is designed to reduce the amount of aberration a by reducing the aperture Dl of the deceleration lens (Lens 1 ) in such a situation.

本発明は、上述の点に鑑み、さらに球面収差を小さくし
た電子銃、特にユニポテンシャル型の電子銃を提供する
ものである。In view of the above points, the present invention provides an electron gun, particularly a unipotential type electron gun, with further reduced spherical aberration.

以下、本発明による電子銃について説明する。The electron gun according to the present invention will be explained below.

第３図は本発明の基本例を示すユニポテンシャル型の゛
電子銃であり、カソードに１第１グリツドｑ１〜第５グ
リツドｑ５が順次配列され、第３グリツドＧ３及び第５
グリツド０５に高圧の例えば陽極電圧ＶＡが与えられ、
第４グリツドｑ４にはこれより十分低いフォーカス電圧
ＶＦが与えられて第３グリツド０３〜第５グリツドＧ５
によってユニポテンシャル型の主電子レンズ系が構成さ
れて成る。FIG. 3 shows a unipotential type electron gun showing a basic example of the present invention, in which first grid q1 to fifth grid q5 are sequentially arranged at the cathode, and third grid G3 and fifth grid
A high voltage, for example, an anode voltage VA, is applied to the grid 05,
The fourth grid q4 is given a focus voltage VF that is sufficiently lower than this, and the third grid 03 to the fifth grid G5 are
A unipotential main electron lens system is constructed by:

本発明においても、第３グリツドＧ３と第４グリツドＧ
４とによって減速型の前段の′電子レンズ（Ｌｅｎｓｌ
）が構成され、第４グリツドＧ４と第５グリツドＧ５と
によって加速型の後段の電子レンズ（Ｌｅｎｓ　２　）
が構成されるが、特に本発明においては、前段の電子レ
ンズ（Ｌｅｎｓ　１　）と、後段の電子レンズ（Ｌｅｎ
ｓ２）ど゛を、Ｍａｔ子作用顧域が分離されるように第
４グリツドＧ４の長さｅを設定し、前段の電子レンズ（
Ｌｅｎｓ　１　）の電子レンズ口径を後段の電子レンズ
（Ｌｅｎｓ２）の電子レンズ口径より小に選定すると共
に、後段の電子レンズ（Ｌｅｎｓ２）においてその第５
グリツドｑ５の口径を第４グリツドＧ４の口径より大に
選定する。即ち、第４グリツドｑ４の第３グリツドＧ３
側の口径Ｄ１より第４グリツドＧ４の第５グリツド側の
口径Ｄ２を犬にし、さらに第５グリツドｑ５の口径Ｄ３
を大にする（　Ｄｌ＜　Ｄ２　＜　Ｄａ　）。Also in the present invention, the third grid G3 and the fourth grid G
4, the front-stage deceleration-type electron lens (Lensl)
) is constructed, and the fourth grid G4 and the fifth grid G5 form an accelerating type rear-stage electron lens (Lens 2).
In particular, in the present invention, a front-stage electron lens (Lens 1) and a rear-stage electron lens (Lens 1) are constructed.
s2) The length e of the fourth grid G4 is set so that the Mat child effect area is separated, and the front electron lens (
The electron lens aperture of Lens 1) is selected to be smaller than the electron lens aperture of the subsequent electronic lens (Lens 2), and the fifth
The diameter of grid q5 is selected to be larger than the diameter of fourth grid G4. That is, the third grid G3 of the fourth grid q4
The diameter D2 on the fifth grid side of the fourth grid G4 is made smaller than the diameter D1 on the side, and the diameter D3 on the fifth grid q5 is
Increase (Dl<D2<Da).

また、前段の電子レンズ（Ｌｅｎｓ　１　）と後段の電
子レンズ（Ｌｅｎｓ　２　）とが、互に電子レンズ作用
領域が分離されるように、第４グリツドｑ４の長さ妃（
Ｑｌ十Ｑ２）を第３グリツドｑ３の口径Ｉ従って第４グ
リツドＧ４の小径部の口径Ｄｌの１．５倍以上、即ち氾
≧１．５　ＤＢに選定する。この構成によって、加速型
の後段の電子レンズ（Ｌｅｎｓ　２　）の収差量が改善
され、全体の主電子レンズ系の収差量がさらに改善され
る。Further, the length of the fourth grid q4 is adjusted so that the front-stage electron lens (Lens 1) and the rear-stage electron lens (Lens 2) have their electron lens action areas separated from each other.
Ql+Q2) is selected to be at least 1.5 times the diameter I of the third grid q3, and thus the diameter Dl of the small diameter portion of the fourth grid G4, that is, flood≧1.5 DB. With this configuration, the amount of aberration of the accelerating type subsequent electron lens (Lens 2) is improved, and the amount of aberration of the entire main electron lens system is further improved.

第６図は、本発明による電子銃と従来の成子１５との球
面収差係数について比較した曲線図である。FIG. 6 is a curve diagram comparing the spherical aberration coefficients of the electron gun according to the present invention and the conventional Seiko 15.

同図において縦軸は球面収差係数に係わるｉｔｇ３（こ
れについては下記の収差係数の関係式に示す）をとり、
横軸に物点（クロスオーバ点）側・の焦点距離ｆｌをと
って示す。曲線（Ｉ）は第４図で示す第３グリツドｑ３
、第４グリツドＧ４及び第５グリツドＧ５の各口径を互
に同じにし、第４グリツドｑ４の長さＱ　＝　２１．０
　ｍｍとした一般的ユニポテンシャル型電子銃の場合で
ある。曲線（Ｉ［）は、第５図で示す後段の電子レンズ
（Ｌｅｎｓ　２　）の口径Ｄ２　（第５グリツドＧ５と
第４グリツドｑ４の第５グリツド側の口径が互に等径で
ある）を前段の電子レンズ（Ｌｅｎｓｌ）の口径Ｄ１よ
り大に選定し、Ｄｌ　＝　１３．８　ａｍ。In the figure, the vertical axis represents itg3 related to the spherical aberration coefficient (this is shown in the relational expression of the aberration coefficient below),
The focal length fl on the object point (crossover point) side is plotted on the horizontal axis. Curve (I) is the third grid q3 shown in FIG.
, the diameters of the fourth grid G4 and the fifth grid G5 are the same, and the length Q of the fourth grid q4 is 21.0.
This is the case of a general unipotential electron gun with mm. The curve (I[) indicates that the aperture D2 of the rear electron lens (Lens 2) shown in FIG. The aperture D1 of the electronic lens (Lensl) is selected to be larger than that of Dl = 13.8 am.

Ｄ２　＝　１６．４ｍｍ、　　Ｑ　＝　２８．１ｍｍ、
Ｃ２＝　１０ｃｎｍ　トＬ　タ場合のユニポテンシャル
型電子銃である。曲＃（ＩＡ）、（Ｉｆｎ）、（Ｉｃ）
は夫々第３図で示す本発明によるユニポテンシャル型゛
電子銃で夫々Ｑ　＝　２８．１ｍｍ、　３３．１ｍｍ。D2 = 16.4mm, Q = 28.1mm,
This is a unipotential electron gun where C2=10cnm. Song #(IA), (Ifn), (Ic)
are unipotential type electron guns according to the present invention shown in FIG. 3, with Q = 28.1 mm and 33.1 mm, respectively.

３８．１　ａｕ＋＋　、とした場合テする（但し、ＤＩ
　＝　１３．８ｎ＋ｎ＋　。38.1 au++ , it is true (however, DI
= 13.8n+n+.

Ｄ２　＝　１６．４ｍｍ、　Ｄ３　＝　２２．０ｍｍ、
　１２　＝　１０ｍｍ一定）。D2 = 16.4mm, D3 = 22.0mm,
12 = 10mm constant).

なお、収差係数の関係式を第７図を８照して示す。Incidentally, the relational expression of the aberration coefficients is shown with reference to FIG.

収差量（結像面（１）でのビームスポット半径）Δｒは
、球面収差係数をＣ８、レンズの倍率なＭ、ビームのク
ロスオーバ点（物点）からの最大発散角の半角をα０と
すると、 Δｒ　＝　ＭＣ８α。３ で与えられる。そして第６図で与えたｇａは下記に示す
量を云う。The amount of aberration (beam spot radius at imaging surface (1)) Δr is given by C8 as the spherical aberration coefficient, M as the magnification of the lens, and α0 as the half angle of the maximum divergence angle from the beam crossover point (object point). , Δr = MC8α. It is given by 3. And ga given in FIG. 6 refers to the amount shown below.

ｇ　３　”　Ｃ８Ｏ／ｆ　２ Δｒご（Ｌαｏ）ｇａ 但し、ｆ２は像側の焦点距離、Ｌは物点から結像面まで
の距離である。g 3 ” C8O/f 2 Δrgo(Lαo)ga However, f2 is the focal length on the image side, and L is the distance from the object point to the imaging plane.

上記の第６図で明らかなように本発明による電子銃は、
第５図で示す従来の電子銃よりもさらに良好な収差係数
を示し、約１５％〜２０　％の収差係数が改善されてい
る。また、本発明において、第４グリツドＧ４を第５グ
リツドＧ５内に入れて屯ね合せても収差量はほとんど変
化しないことも実験で確かめられている。As is clear from FIG. 6 above, the electron gun according to the present invention is
It shows an even better aberration coefficient than the conventional electron gun shown in FIG. 5, and the aberration coefficient has been improved by about 15% to 20%. Furthermore, in the present invention, it has been experimentally confirmed that even if the fourth grid G4 is inserted into the fifth grid G5 and combined together, the amount of aberration hardly changes.

次に本発明の具体的な実施例について述べる。Next, specific examples of the present invention will be described.

第８図及び第９図は本発明の一実施例である。FIGS. 8 and 9 show an embodiment of the present invention.

本例においては、カソードに、第１グリツド０１〜第５
グリツドＧ５が同軸心上に順次配列されるが、特に口径
Ｄ３を有する第５グリツドＧ５と口径Ｄ１を有する第３
グリツドｑ３とを一体構造となし、第４グリツドＧ４を
一体化した第５グリツドＧ５の内部に配するようにする
。この場合、実質的な第５グリツドＧ５より等径で延長
して第３グリツドＧ３側に接続される延長部（２）にお
いては、相対回す、る位置において夫々窓部（３）を形
成する。従って、この延長部（２）は実質的には第５グ
リツドＧ５と第３グリツドＧ３を電気的に接続するリー
ド部に相当する。In this example, the cathode is connected to the first grid 01 to the fifth grid.
Grids G5 are arranged in sequence on the same axis, in particular a fifth grid G5 having a diameter D3 and a third grid G5 having a diameter D1.
The grid q3 is formed into an integral structure, and the fourth grid G4 is disposed inside the integrated fifth grid G5. In this case, in the extension portions (2) that extend substantially the same diameter from the fifth grid G5 and are connected to the third grid G3 side, window portions (3) are formed at respective positions where the grids are rotated relative to each other. Therefore, this extension part (2) substantially corresponds to a lead part that electrically connects the fifth grid G5 and the third grid G3.

そして、口径Ｄ１を有する小径部と口径Ｄ２を有する大
径部からなる第４グリツドＧ４はその大径部が実質的な
第５グリツドＧｓ内に入り込み、小径部が窓部（３）に
臨むように第３グリツドＧ３と対向するように配置ゴす
る。この第４グリツドＧ４の小径部と第３グリツドＧ３
によって前段の電子レンズ系（Ｌｅｎｓｌ）が形成され
、第４グリツドＧ４の大径部と第５グリツドｑ５によっ
て後段の′電子レンズ系（Ｌｅｎｓ　２　）が形成され
る。この状態で第１グリッドＧｌ−第４グリツドＧ４を
共通の絶縁支持棒（４）によって支持する。第４グリツ
ドＧ４の支持は窓部（３）に臨む部分において行う。な
お、第５グリツドＧ５の後端部にはゲッターシールド用
のシールド板（５）が設けられる。The fourth grid G4 consists of a small diameter part having a diameter D1 and a large diameter part having a diameter D2, so that the large diameter part enters into the substantial fifth grid Gs and the small diameter part faces the window part (3). It is arranged so as to face the third grid G3. The small diameter part of this fourth grid G4 and the third grid G3
A front-stage electron lens system (Lensl) is formed, and a rear-stage electron lens system (Lens 2) is formed by the large diameter portion of the fourth grid G4 and the fifth grid q5. In this state, the first grid Gl to the fourth grid G4 are supported by a common insulating support rod (4). The fourth grid G4 is supported at the portion facing the window (3). Note that a shield plate (5) for a getter shield is provided at the rear end of the fifth grid G5.

従って第４グリツドＧ４とシールド板（５）間の間隔ｅ
３は、第４グリツドＧ４とシールド板（５）間で電子レ
ンズが構成されない距離に選ばれる。このように構成さ
れた電子銃は陰極線管体のネック部（６）内に配鉗され
る。ここで、第５グリツドＧ５の口径Ｄ３はネック部（
６）の内径をＤ４とするときＤ４　＞　Ｄ３　＞　０．
６５Ｄ４となるように選び得る。Therefore, the distance e between the fourth grid G4 and the shield plate (5)
3 is selected as a distance at which no electron lens is formed between the fourth grid G4 and the shield plate (5). The electron gun configured in this manner is installed within the neck portion (6) of the cathode ray tube body. Here, the diameter D3 of the fifth grid G5 is the neck portion (
When the inner diameter of 6) is D4, D4 > D3 > 0.
65D4.

第１０図は本発明の他の実施例である。本例においては
第３グリツドＧ３、第４グリツドＧ４及び第５グリツド
Ｇ５を独立に形成し、第４グリツドＧ４の大径部を第５
グリツドＧ５内に挿入した状！線で第４グリツドＧ４と
第５グリッド０５間をリング状のセラミック絶縁体（７
）を介してろう材にてｆｆ１ｆｄ的に連Ｍする。そして
、第１グリツド０１〜第４グリツドｑ４を共通の絶縁支
持棒（４）によって支持し、また第３グリツドｑ３と第
５グリツドＧ５は適当なリード線を介して接続し目的の
電子銃を構成する。FIG. 10 shows another embodiment of the invention. In this example, the third grid G3, the fourth grid G4, and the fifth grid G5 are formed independently, and the large diameter part of the fourth grid G4 is replaced by the fifth grid.
As inserted into grid G5! A ring-shaped ceramic insulator (7
) are connected in a ff1fd manner with a brazing filler metal. Then, the first grid 01 to the fourth grid q4 are supported by a common insulating support rod (4), and the third grid q3 and the fifth grid G5 are connected via appropriate lead wires to form the target electron gun. do.

斯る第９図乃至第１０図に示す電子銃によれば、第５グ
リツドＧ５が第３グリツドＧ３又は第４グリツドＧ４と
機械的に一体となり、絶縁支持棒（４）に支持されない
状態にあるので、第５グリツドＧ５の口径Ｄ３をネック
部（６）の内径Ｄ４に近づくほどに大きくできる。これ
が為、後段の電子レンズ系（Ｌｅｎｓ２）においては第
５グリツドＧ５の口径Ｄ３を第４グリツドＧ４の口径Ｄ
２より大きくすることができ、ネック部（６）の内径Ｄ
４を変えることなく、さらに主電子レンズ系の球面収差
を小さくすることができる。According to the electron gun shown in FIGS. 9 and 10, the fifth grid G5 is mechanically integrated with the third grid G3 or the fourth grid G4, and is not supported by the insulating support rod (4). Therefore, the diameter D3 of the fifth grid G5 can be increased as it approaches the inner diameter D4 of the neck portion (6). For this reason, in the subsequent electronic lens system (Lens2), the aperture D3 of the fifth grid G5 is set to the aperture D3 of the fourth grid G4.
The inner diameter D of the neck (6) can be larger than 2.
4, it is possible to further reduce the spherical aberration of the main electron lens system.

第１１図は、上記の本発明による電子銃と、第４図に示
す従来のユニポテンシャル型電子銃との電流量（ｍ　Ａ
　）と螢光面上でのビームスポットの平均径（＋＋＋ｍ
）の関係を示した曲線図である。同図中、曲線（１■）
は従来の電子銃、曲線（Ｖ）は本発明の電子銃である。FIG. 11 shows the amount of current (m A
) and the average diameter of the beam spot on the fluorescent surface (+++ m
) is a curve diagram showing the relationship. In the same figure, the curve (1■)
is the conventional electron gun, and curve (V) is the electron gun of the present invention.

この第１１図から明らかなように全区流域で大巾にビー
ムスポットが改善される。As is clear from FIG. 11, the beam spot is greatly improved in the entire basin.

尚、後段の電子レンズ（Ｌｅｎｓ　２　）を′電界延長
型レンズとなし最終電極の内径を犬となす電子銃も可能
であり、この場合も球面収差をより小さくすることがで
きる。It is also possible to use an electron gun in which the subsequent electron lens (Lens 2) is an electric field extension type lens and the final electrode has a dog-shaped inner diameter, and in this case as well, the spherical aberration can be further reduced.

上述せる如く本発明においては、従来の互に電子レンズ
作用領域が分離された前段の電子レンズ系の電子レンズ
口径を単に後段の電子レンズ系の電子レンズ口径より小
に遺んだ電子銃より更にその球面収差が小さくなるもの
で、従ってカラー受像管あるいはプロジェクタ−管等に
適用して好適ならしめるものである。As described above, in the present invention, the electron lens system is further improved than the conventional electron gun in which the electron lens system in the front stage is simply made smaller in diameter than the electron lens diameter in the rear stage electron lens system in which the electron lens action areas are separated from each other. Its spherical aberration is reduced, and therefore it is suitable for use in color picture tubes, projector tubes, and the like.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明に供する電子銃の主電子レンズ系の部分
を示す断面図、第２図は従来のユニポテンシャル型゛成
子銃の例を示す断面図、第３図は本発明による′電子銃
の基本例を示す断面図、第４図かび第５図は従来例の電
子銃の要部の断面図、第６図は本発明と従来の電子銃に
おける球面収差係数と焦点距離に関する曲線図、第７図
は収差係数の関係式を求めるための祝明図、第８図及び
第９図は本発明による電子銃の一犬施例な示す平面図及
びその断面図、第１０図は本発明による′電子銃の他の
実施例を示す断面図、第１１図は本発明と従来の電子銃
の＊流量とビームスポット径との関係を示す曲線図であ
る。 Ｋはカソード、Ｇ１−Ｇ５は第１〜第５グリツドである
。 第１図 第２図 第７図 第３嵩 第４区 第５図 第Ｓ図 第’ｊ　ｌ」 第１０図 ニー右−−−−も−□ 、東点！巨灘ｆ１ 第１１図 電流量　　ｍＡ 手続補正書 昭和５８年１　月　１３日 １、事件の表示 昭和５７年特許願第　３１３５１　　号２、発明の名称
　電子銃 ３、補正をする者 事件との関係　　　特許出願人 住所　東京部品用凶兆品用６丁目７番３５号名称（２１
８）ソニー株式会社 代伽締役大賀典雄 ６、補正により増加する発明の数 ７、補　正　ノ月象　　明細書の発明の詳細な説明の欄
及び図面。 ８、補正の内容 （１）明細書中、第４頁５行ｒ（Ｄ２＜ＤＩ）Ｊをｒ（
Ｄ２＞ＤＩ）Ｊと訂正する。 （２）図面中、第１０図を別紙の通り補正する。 以上FIG. 1 is a cross-sectional view showing the main electron lens system of the electron gun used in the present invention, FIG. 2 is a cross-sectional view showing an example of a conventional unipotential type electron gun, and FIG. A sectional view showing a basic example of a gun, FIGS. 4 and 5 are sectional views of main parts of a conventional electron gun, and FIG. 6 is a curve diagram relating to spherical aberration coefficient and focal length in the present invention and a conventional electron gun. , FIG. 7 is a diagram for determining the relational expression of aberration coefficients, FIGS. 8 and 9 are a plan view and a cross-sectional view of an example of an electron gun according to the present invention, and FIG. FIG. 11 is a sectional view showing another embodiment of the electron gun according to the invention, and is a curve diagram showing the relationship between flow rate and beam spot diameter of the present invention and the conventional electron gun. K is a cathode, and G1-G5 are first to fifth grids. Fig. 1 Fig. 2 Fig. 7 Fig. 3 Bulk 4th section Fig. 5 S Fig. 'j l' Fig. 10 Knee right ---- also -□, east point! Giant sea f1 Figure 11 Current amount mA Procedural amendment January 13, 1981 1, Display of the case Patent Application No. 31351 of 1982 2, Title of the invention Electron gun 3, Relationship with the person making the amendment Patent Applicant Address Tokyo Parts 6-7-35 Name (21
8) Sony Corporation Daiga Director Norio Oga 6, Number of inventions increased by amendment 7, Amendment Detailed description of the invention column and drawings in the specification. 8. Contents of amendment (1) In the specification, page 4, line 5 r (D2<DI) J is changed to r (
Correct it as D2>DI)J. (2) In the drawings, Figure 10 will be corrected as shown in the attached sheet. that's all

Claims (1)

【特許請求の範囲】[Claims] ユニポテンシャル型電子銃において、主電子レンズ系が
互に電子レンズ作用領域を分離した前段の第３グリツド
及び第４グリツドからなる電子レンズ系と後段の第４グ
リツド及び第５グリツドからなる電子レンズ系とにより
構成され、前記前段の電子レンズ系の電子レンズ口径が
前記後段の電子レンズ系の電子レンズ口径より小に選定
されると共に、前記後段の電子レンズ系において前記第
５グリツドの口径が前記第４グリツドの口径より犬に選
定されて成る電子銃。In a unipotential electron gun, the main electron lens system is an electron lens system consisting of a third grid and a fourth grid in the front stage and a fourth grid and a fifth grid in the rear stage, with the electron lens action areas separated from each other. The electron lens aperture of the front-stage electron lens system is selected to be smaller than the electron lens aperture of the rear-stage electron lens system, and the aperture of the fifth grid in the rear-stage electron lens system is selected to be smaller than the diameter of the fifth grid. An electron gun selected from the 4-grid caliber.
JP57031351A 1982-02-26 1982-02-26 Electron gun Granted JPS58147942A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP57031351A JPS58147942A (en) 1982-02-26 1982-02-26 Electron gun
CA000422243A CA1196677A (en) 1982-02-26 1983-02-23 Electron gun
KR1019830000761A KR900009078B1 (en) 1982-02-26 1983-02-24 Electron gun
GB08305131A GB2115605B (en) 1982-02-26 1983-02-24 Electron guns
DE19833306498 DE3306498A1 (en) 1982-02-26 1983-02-24 ELECTRONIC CANNON
FR8303173A FR2522440B1 (en) 1982-02-26 1983-02-25 ELECTRON CANON
US06/778,769 US4649318A (en) 1982-02-26 1985-09-23 Electron gun with low spherical aberration

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57031351A JPS58147942A (en) 1982-02-26 1982-02-26 Electron gun

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP16731982A Division JPS58147943A (en) 1982-02-26 1982-09-25 Electron gun

Publications (2)

Publication Number Publication Date
JPS58147942A true JPS58147942A (en) 1983-09-02
JPH0379813B2 JPH0379813B2 (en) 1991-12-20

Family

ID=12328802

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57031351A Granted JPS58147942A (en) 1982-02-26 1982-02-26 Electron gun

Country Status (2)

Country Link
JP (1) JPS58147942A (en)
KR (1) KR900009078B1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62133647A (en) * 1985-12-04 1987-06-16 Hitachi Ltd Electron gun structure for cathode-ray tube
JPS6372040A (en) * 1986-09-12 1988-04-01 Hitachi Ltd Electron gun structure
JPS63198239A (en) * 1987-02-12 1988-08-16 Hitachi Ltd Electron gun structure body for cathode-ray tube

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53146531A (en) * 1977-05-27 1978-12-20 Hitachi Ltd Pickup tube

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53146531A (en) * 1977-05-27 1978-12-20 Hitachi Ltd Pickup tube

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62133647A (en) * 1985-12-04 1987-06-16 Hitachi Ltd Electron gun structure for cathode-ray tube
JPH0731985B2 (en) * 1985-12-04 1995-04-10 株式会社日立製作所 Cathode ray tube electron gun assembly
JPS6372040A (en) * 1986-09-12 1988-04-01 Hitachi Ltd Electron gun structure
JPS63198239A (en) * 1987-02-12 1988-08-16 Hitachi Ltd Electron gun structure body for cathode-ray tube

Also Published As

Publication number Publication date
KR900009078B1 (en) 1990-12-20
KR840003917A (en) 1984-10-04
JPH0379813B2 (en) 1991-12-20

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