JPS58147150A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS58147150A
JPS58147150A JP57030035A JP3003582A JPS58147150A JP S58147150 A JPS58147150 A JP S58147150A JP 57030035 A JP57030035 A JP 57030035A JP 3003582 A JP3003582 A JP 3003582A JP S58147150 A JPS58147150 A JP S58147150A
Authority
JP
Japan
Prior art keywords
silicon
window
emitter
film
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57030035A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0371771B2 (enrdf_load_stackoverflow
Inventor
Toshio Kurahashi
倉橋　敏男
Toshihiko Ono
敏彦 小野
Kiyoshi Watabe
渡部　潔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57030035A priority Critical patent/JPS58147150A/ja
Publication of JPS58147150A publication Critical patent/JPS58147150A/ja
Publication of JPH0371771B2 publication Critical patent/JPH0371771B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Formation Of Insulating Films (AREA)
  • Bipolar Transistors (AREA)
JP57030035A 1982-02-26 1982-02-26 半導体装置の製造方法 Granted JPS58147150A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57030035A JPS58147150A (ja) 1982-02-26 1982-02-26 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57030035A JPS58147150A (ja) 1982-02-26 1982-02-26 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58147150A true JPS58147150A (ja) 1983-09-01
JPH0371771B2 JPH0371771B2 (enrdf_load_stackoverflow) 1991-11-14

Family

ID=12292560

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57030035A Granted JPS58147150A (ja) 1982-02-26 1982-02-26 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58147150A (enrdf_load_stackoverflow)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5587442A (en) * 1978-12-25 1980-07-02 Fujitsu Ltd Manufacture of semiconductor device
JPS55156327A (en) * 1979-05-23 1980-12-05 Fujitsu Ltd Manufacture for semiconductor
JPS5633841A (en) * 1979-08-29 1981-04-04 Sony Corp Manufacture of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5587442A (en) * 1978-12-25 1980-07-02 Fujitsu Ltd Manufacture of semiconductor device
JPS55156327A (en) * 1979-05-23 1980-12-05 Fujitsu Ltd Manufacture for semiconductor
JPS5633841A (en) * 1979-08-29 1981-04-04 Sony Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPH0371771B2 (enrdf_load_stackoverflow) 1991-11-14

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