JPS58144493A - Formation of metal plating layer onto metal electrode - Google Patents

Formation of metal plating layer onto metal electrode

Info

Publication number
JPS58144493A
JPS58144493A JP2649982A JP2649982A JPS58144493A JP S58144493 A JPS58144493 A JP S58144493A JP 2649982 A JP2649982 A JP 2649982A JP 2649982 A JP2649982 A JP 2649982A JP S58144493 A JPS58144493 A JP S58144493A
Authority
JP
Japan
Prior art keywords
metal
film
plating layer
thin film
metal plating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2649982A
Other languages
Japanese (ja)
Inventor
Taizo Yoshida
泰三 吉田
Koji Mori
孝二 森
Masakuni Itagaki
板垣 雅訓
Tatsumi Ishiwatari
石渡 辰巳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP2649982A priority Critical patent/JPS58144493A/en
Publication of JPS58144493A publication Critical patent/JPS58144493A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To efficiently form a metal plating layer on a metal electrode, by a method wherein a metal thin film is laminated to the entire surface of an insulating substrate while an insulator film having a window at a part to be provided with a metal plating layer is provided thereon to apply metal plating to said window part and, after the insulator film is removed, the metal thin film is etched into a predetermined shape. CONSTITUTION:A NiCr film and an Au film are laminated to the entire surface of a substrate 1 such as a glass substrate to form a metal thin layer 2 and a photoresist film 3 is applied thereon. In the next step, a window is provided to a predetermined part where an Au film is desirably formed and a plating lead wire 5 is connected thereto. To the part of the window 4, a metal plating layer 6 comprising Au is provided by electroplating. Subsequently, the photoresist film 3 and the plating lead wire 5 are removed and a photoresist layer 7 is coated to cover the plating layer 6 therewith. In this state, etching treatment is applied to remove the metal thin film 2 at an unnecessary part and, after metal electrodes 2a are formed in a mutually parted pattern, the photoresist layer 7 is removed to form a metal plating layer.

Description

【発明の詳細な説明】 〔発明の背景〕 本発明は、基板上に、設けられた金属薄膜表面上に金属
メッキを形成するための方法に関し、さらに詳しくは簡
単な工程によって経済的に、〃・つ画像読取装置、ある
いは画像記録装置に用いられる金属電極を形成するため
の電解メッキ方法に関する。
DETAILED DESCRIPTION OF THE INVENTION [Background of the Invention] The present invention relates to a method for forming metal plating on the surface of a metal thin film provided on a substrate, and more particularly, it relates to a method for forming metal plating on the surface of a metal thin film provided on a substrate, and more particularly, it relates to a method for forming metal plating on the surface of a metal thin film provided on a substrate, and more particularly, it relates to a method for forming metal plating on the surface of a metal thin film provided on a substrate, and more particularly, it relates to a method for forming metal plating on the surface of a metal thin film provided on a substrate, and more particularly, it relates to a method for forming metal plating on the surface of a metal thin film provided on a substrate. -Relates to an electrolytic plating method for forming metal electrodes used in image reading devices or image recording devices.

パターンを画成するためのマスクを用いる電解メッキの
方法においては一層の価格の低減化1品質の向上のため
の改善が要求されるようになってきている。このため1
種々の方法が開発されてきているが、従来の方法は、複
雑で、多数の工程を必要とするという共通した欠点を持
つものであった。
In the electrolytic plating method using a mask for defining a pattern, improvements are being required to further reduce costs and improve quality. For this reason 1
Although various methods have been developed, conventional methods have the common drawback of being complex and requiring multiple steps.

第1図には1画像読取装置などに用いられる光センサ一
部が示されており、この光センサ一部は、基板/上に、
相・互に離間した個別形状をなすNiCr−Auなど力
・らなる簿膜状電極コaが設けられており、この相互に
離間した薄膜状室@、2a上の一部に、内外部配線をボ
ンディングするための金属メッキ層lが設けられて形成
されている。従来知られている方法によシ、金属メッキ
層tを薄膜状電極膜上に形成するには、1ず基板l上の
所要範囲に薄膜状電極を一面にわたって真空蒸着法など
によシ積層し1次いでホトレジストなどを用いてエツチ
ングして相互に離間した形状の薄膜状電極2aを形成し
、その後この相互に離間した薄膜状電極、2aを任意の
場所で結線し、メ・ツキ用電源に配線する。そしてメッ
キしたい部分以外を絶縁体にて被覆してメッキ層を形成
したのち、絶縁体および結線部を除去する。このような
従来法においては、相互に離間した電極をあら〃・しめ
結線した後に、絶縁被覆の形成、メッキの実施次いで絶
縁部・結線部の除去という工程を行なうこと力・ら。
FIG. 1 shows a part of an optical sensor used in an image reading device, etc., and this part of the optical sensor is mounted on a substrate/top.
Membrane-like electrode cores a made of NiCr-Au are provided in individual shapes spaced apart from each other, and internal and external wiring A metal plating layer l for bonding is provided. In order to form a metal plating layer t on a thin film electrode film by a conventionally known method, first, a thin film electrode is laminated over a required area of the substrate l by vacuum evaporation or the like. 1. Next, etching is performed using photoresist or the like to form mutually spaced thin film electrodes 2a, and then these mutually spaced thin film electrodes 2a are connected at arbitrary locations and wired to a power source for metal fittings. do. Then, after forming a plating layer by covering the parts other than the parts to be plated with an insulator, the insulator and the connection part are removed. In such a conventional method, after the electrodes spaced apart from each other are connected, the steps of forming an insulating coating, plating, and removing the insulating part and the connecting part are performed.

メッキ工程全体の工程が複雑で、力・つ作業上の能率も
悪いという欠点をもっていたのである。
The overall plating process was complicated, and it had the drawbacks of low power and work efficiency.

〔発明の概要〕[Summary of the invention]

本発明は、このような欠点を解決しようとするものであ
り1画像読取装置あるいは画像記録装置の製造に際して
相互に離間している電極の結線、およびメッキ後の結線
部の除去という工程を省略することのできる簡略化され
た工程により、薄膜状電極の一部分上に内外部配線をポ
ンディングするための金属メッキ層を形成する方法を提
供することを目的としている。
The present invention aims to solve these drawbacks by omitting the steps of connecting electrodes that are spaced apart from each other and removing the connected portions after plating when manufacturing an image reading device or image recording device. It is an object of the present invention to provide a method for forming a metal plating layer for bonding internal and external wiring on a portion of a thin film electrode using a simplified process.

本発明による金属電極上への金属メッキ層の形成方法は
、ガラス、セラミックスなどの絶縁性基板の所要範囲に
金属薄膜を一面にわたって積層し、その表面上の金属メ
ッキ層を設ける場所に相当する部分に窓を有する絶縁体
膜を金属薄膜上に設け。
The method of forming a metal plating layer on a metal electrode according to the present invention involves laminating a thin metal film over a required range of an insulating substrate such as glass or ceramics, and forming a portion of the surface corresponding to the location where the metal plating layer is to be provided. An insulator film with a window is provided on the metal thin film.

前記金属薄膜にメッキ用リード線を接続して前記窓部分
に金属メッキ層を形成した後に、絶縁体膜を除去し、次
いで金属薄膜を所定の形状にエツチングすることを特徴
としている。
The present invention is characterized in that after connecting a plating lead wire to the metal thin film and forming a metal plating layer on the window portion, the insulating film is removed, and then the metal thin film is etched into a predetermined shape.

〔発明の詳細な説明〕[Detailed description of the invention]

金属薄膜を形成する金属は特定のものに限定されること
はないが−NiCr膜とAu膜との積層体またはNi 
Cr膜−Ni膜およびAu膜の積層体とするか。
Although the metal forming the metal thin film is not limited to a specific one, it may be a laminate of a NiCr film and an Au film or a Ni film.
Will it be a laminate of Cr film-Ni film and Au film?

あるいはNiCr膜またはNi膜とすることが好ましい
。メッキ金属についても同様であるが、目的に応じてA
u + Ni−ハンダ、あるいはSn を選択すること
が好ましい。
Alternatively, it is preferable to use a NiCr film or a Ni film. The same applies to plated metals, but A depending on the purpose.
It is preferable to select u+Ni-solder or Sn.

絶縁体の被覆は、金属薄膜層の上にホトレジストを塗布
することにより、また、ホトリソグラフ技術によって、
この絶縁膜に所定の窓を開けることにより実施される。
The insulator coating can be applied by applying photoresist on top of the metal thin film layer or by photolithographic techniques.
This is carried out by opening a predetermined window in this insulating film.

この絶縁膜の窓の部分は、将来金属メッキ層を形成する
場所に相当している。
The window portion of this insulating film corresponds to a location where a metal plating layer will be formed in the future.

以下1本発明による金属電極上への金属メッキ層の形成
方法を図面を参照して例示するが1本発明はこれらの実
施例に限定されるものではない。
The method of forming a metal plating layer on a metal electrode according to the present invention will be illustrated below with reference to the drawings, but the present invention is not limited to these examples.

第2図には1本発明による金属電極上への金属メッキ層
の形成方法の工程の概要を示す。
FIG. 2 shows an outline of the steps of a method for forming a metal plating layer on a metal electrode according to the present invention.

第2図(a)に示すように、ガラス、セラミックスなど
の基板l上に、真空蒸着法、スパッタ法、CVD法など
によって、NiCr膜次いでAu膜を積層して金属薄膜
λを形成する。このNi Cr膜およびAu膜コは、は
とんど基板lの全面にわたって付着している。
As shown in FIG. 2(a), a metal thin film λ is formed by laminating a NiCr film and then an Au film on a substrate l made of glass, ceramics, or the like by vacuum evaporation, sputtering, CVD, or the like. The Ni Cr film and the Au film are attached almost entirely over the entire surface of the substrate 1.

とのNiCr −Au7)aらなる金属薄膜コの上に。on a metal thin film made of NiCr-Au7)a.

AZ−/3jOJなどのホトレジスト膜3を塗布する。A photoresist film 3 such as AZ-/3jOJ is applied.

次いで第2図(b)に示すようにホトリフグラフィ技術
にてAuメッキ層を形成したい所定の部分に窓≠を設け
、この時に、同時にメッキ用リード線を接続するための
窓も設ける。
Next, as shown in FIG. 2(b), a window is provided at a predetermined portion where an Au plating layer is to be formed using photolithography, and at the same time, a window for connecting a lead wire for plating is also provided.

次いで金属薄膜λにメッキ用リード線jを接続した後、
前記窓部分に電解メッキ法によって+ Auなどの金属
メッキ層tを設ける。その後第2図(c)に示すように
、ホトレジスト膜3およびメッキリード線jを除去する
と、Ni Cr −Au膜力・らなる金属薄膜λ上に金
属メッキ層6が相互に離間した形状で形成されている状
態となる。
Next, after connecting the plating lead wire j to the metal thin film λ,
A metal plating layer t of + Au or the like is provided on the window portion by electrolytic plating. Thereafter, as shown in FIG. 2(c), when the photoresist film 3 and the plated lead wires j are removed, metal plating layers 6 are formed in a shape spaced apart from each other on the metal thin film λ made of Ni Cr - Au film. The state is as follows.

次に、第2図(d)に示すように、ホトレジスト層7を
再び塗布し、これをパターニングして、金属メッキ層を
部分および相互に離間した形状をなす金属電極を形成し
たい部分をホトレジスト層7で被覆する。
Next, as shown in FIG. 2(d), the photoresist layer 7 is applied again and patterned to form a portion of the metal plating layer and a portion of the metal electrode spaced apart from each other using the photoresist layer. Cover with 7.

次に第2図(、)に示すように、エツチング処理により
、不要な部分の金属薄膜λを除去して、相互に離間した
形状をなす金属電極Xaを形成し、そしてホトレジスト
層7を除去することにより1本発明による金属メッキ層
が形成される。
Next, as shown in FIG. 2(,), unnecessary portions of the metal thin film λ are removed by etching to form metal electrodes Xa spaced apart from each other, and the photoresist layer 7 is removed. As a result, a metal plating layer according to the present invention is formed.

本発明によれば、従来法において必要であった相互に離
間した金属電極の結線およびその除去という極めて複雑
な工程が省略できるため、能率的に金属電極上へ金属メ
ッキ層を形成することができる。
According to the present invention, the extremely complicated process of connecting and removing metal electrodes separated from each other, which was necessary in the conventional method, can be omitted, so that a metal plating layer can be efficiently formed on the metal electrodes. .

【図面の簡単な説明】[Brief explanation of drawings]

第1図は画像読取装置などに用いられる光センサ一部の
概略図であり、第2図(、)〜(、)は本発明の金属電
極上への金属メッキ層を形成する工程を示す図である。 /・・・絶縁性基板、λ・・・金属薄膜1.2a・・・
金属電極−3・・・ホトレジスト膜、t・・・金属メッ
キ層田願人代理人   猪 股    清 (7) 躬 1 図 活 2 圃(G) も 2 民(C) 氾 2 口(e) 躬 2 図(b) 躬 2 図(d)
FIG. 1 is a schematic diagram of a part of an optical sensor used in an image reading device, etc., and FIG. 2 (,) to (,) are diagrams showing the process of forming a metal plating layer on a metal electrode according to the present invention. It is. /...Insulating substrate, λ...Metal thin film 1.2a...
Metal electrode-3...Photoresist film, t...Metal plating layered agent Kiyoshi Inomata (7) Tsutomu 1 Zukatsu 2 Farm (G) Mo 2 People (C) Flood 2 Kuchi (e) Tsutomu 2 Figure (b) 2 Figure (d)

Claims (1)

【特許請求の範囲】[Claims] 絶縁性基板の所要範囲に金属薄膜を一面にわたって積層
し、その表面上の金属メッキ層を設ける場所に相当する
部分に窓を有する絶縁体膜を金属薄膜上に設け、前記金
属薄膜にメッキ用リード線を接続して窓部分に金属メッ
キ層を形成し1次いで絶縁体膜を除去した後に金属薄膜
を所定の形状にエツチングすることを特徴とする。金属
電極上への金属メッキ層の形成方法。
A thin metal film is laminated over the entire surface in a required range of an insulating substrate, an insulating film having a window on the surface of the insulating substrate corresponding to the location where the metal plating layer is to be provided is provided on the metal thin film, and a plating lead is attached to the metal thin film. The method is characterized in that the wires are connected, a metal plating layer is formed on the window portion, the insulating film is removed first, and then the metal thin film is etched into a predetermined shape. A method for forming a metal plating layer on a metal electrode.
JP2649982A 1982-02-20 1982-02-20 Formation of metal plating layer onto metal electrode Pending JPS58144493A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2649982A JPS58144493A (en) 1982-02-20 1982-02-20 Formation of metal plating layer onto metal electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2649982A JPS58144493A (en) 1982-02-20 1982-02-20 Formation of metal plating layer onto metal electrode

Publications (1)

Publication Number Publication Date
JPS58144493A true JPS58144493A (en) 1983-08-27

Family

ID=12195177

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2649982A Pending JPS58144493A (en) 1982-02-20 1982-02-20 Formation of metal plating layer onto metal electrode

Country Status (1)

Country Link
JP (1) JPS58144493A (en)

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