JPS58142627A - 自己消弧形半導体素子のゲ−ト回路 - Google Patents

自己消弧形半導体素子のゲ−ト回路

Info

Publication number
JPS58142627A
JPS58142627A JP57023553A JP2355382A JPS58142627A JP S58142627 A JPS58142627 A JP S58142627A JP 57023553 A JP57023553 A JP 57023553A JP 2355382 A JP2355382 A JP 2355382A JP S58142627 A JPS58142627 A JP S58142627A
Authority
JP
Japan
Prior art keywords
voltage
gate
photocoupler
semiconductor element
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57023553A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0352256B2 (enrdf_load_html_response
Inventor
Yukinori Tsuruta
幸憲 弦田
Kosaku Ichikawa
耕作 市川
Nagataka Seki
関　長隆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57023553A priority Critical patent/JPS58142627A/ja
Publication of JPS58142627A publication Critical patent/JPS58142627A/ja
Publication of JPH0352256B2 publication Critical patent/JPH0352256B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/722—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit
    • H03K17/723—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit using transformer coupling

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Thyristor Switches And Gates (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
JP57023553A 1982-02-18 1982-02-18 自己消弧形半導体素子のゲ−ト回路 Granted JPS58142627A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57023553A JPS58142627A (ja) 1982-02-18 1982-02-18 自己消弧形半導体素子のゲ−ト回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57023553A JPS58142627A (ja) 1982-02-18 1982-02-18 自己消弧形半導体素子のゲ−ト回路

Publications (2)

Publication Number Publication Date
JPS58142627A true JPS58142627A (ja) 1983-08-24
JPH0352256B2 JPH0352256B2 (enrdf_load_html_response) 1991-08-09

Family

ID=12113679

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57023553A Granted JPS58142627A (ja) 1982-02-18 1982-02-18 自己消弧形半導体素子のゲ−ト回路

Country Status (1)

Country Link
JP (1) JPS58142627A (enrdf_load_html_response)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63102334U (enrdf_load_html_response) * 1986-12-23 1988-07-04

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5465466A (en) * 1977-11-04 1979-05-26 Hitachi Ltd Control circuit for thyristor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5465466A (en) * 1977-11-04 1979-05-26 Hitachi Ltd Control circuit for thyristor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63102334U (enrdf_load_html_response) * 1986-12-23 1988-07-04

Also Published As

Publication number Publication date
JPH0352256B2 (enrdf_load_html_response) 1991-08-09

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