JPS58141444A - Production of magnetic recording medium - Google Patents

Abstract

PURPOSE:To form a long-sized medium to be used for a vertical recording system with high productivity while maintaining the component ratio of Cr with which the control of the rate of vapor deposition is difficult, at a stable state, by directing vapor flow contg. Co to a substrate and passing the vapor flow through the inside of plasma formed by a gaseous Cr compd. as a discharge gas. CONSTITUTION:A tape-like sustrate 1 moves along the peripheral side surface of a cylindrical can 2 under temp. control and is vapor-deposited through the aperture part of a mask 5. Co or a Co alloy 6 is evaporated by heating with electron beams, and Cr is supplied from plasma. More specifically, a gaseous Cr compd. such as Cr(C9H12)2 is introduced as a discharge gas by each specified amt. into the system through an introducing nozzle 13, and high frequency plasma is formed by a coiled high frequency electrode 9.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to the manufacturing capacity θ of a recording medium used in a perpendicular recording system, and an object of the present invention is to enable stable manufacturing of long media.

The perpendicular recording method has attracted attention as a recording method suitable for short wavelength recording, and research on media development and recording methods is active in various fields.

11 (having an axis of easy magnetization in the perpendicular direction. The so-called perpendicular magnetization film is made by adding Or to Co to lower the MS, and
A film in which the C axis of a c,p structure crystal is oriented with small dispersion in the direction perpendicular to the substrate surface is well known.

Known methods for manufacturing this film include high frequency sputtering and electron beam evaporation. Since the high-frequency sputtering method has a low film formation rate, it is difficult to put it into practical use.

Since the m1 electron beam evaporation method involves difficulties in keeping the Or component ratio constant, it requires some ingenuity to take advantage of the high film formation rate.

This is because Or sublimes, making it difficult to control the deposition rate.

The present invention has been made in view of this point, and uses H as an evaporation source.
, co or CoNi.

The addition of Cjr and Or is performed by precipitation from gas plasma using a combination of substances with similar vapor pressures, and the component ratio is kept stable. The present invention will be described in detail below using the drawings.

The figure shows an example of a device for implementing the invention.

As shown in the figure, a Tezo-shaped substrate 1 made of a polymer molded product or the like is moved from a feed-out shaft 3 to a take-up shaft 4 on the circumferential side of a cylindrical can 2 whose temperature is controlled. meanwhile,
The vapor deposition is completed through the opening of the mask 6.

CO or Co alloy 6 is vaporized by electron beam heating. 8 schematically shows an electron beam source.

This is a 7 ton evaporation source container.

The supply of Or is configured to be performed by plasma.

For example, by adjusting the matching hook 10 to a coil-shaped high-frequency electrode 9 with one end open, high-frequency electricity and power can be efficiently supplied from the high-frequency electrode 11 to generate high-frequency plasma. Configure to generate.

Gaseous C such as Or(09H+ 2)2 as a discharge electric body
The r compound is introduced into the system by adjusting the needle size 12. Not only the introduction nozzle 13 but also the outside of the vacuum chamber 14.

180' (: It is necessary to hold the
11; This is to control the introduction of gas jt'(r to be constant).

The negative empty tank 14 has an upper chamber 16 in which a single winding machine □ structure is arranged.

To the plasma chamber 16 and the evaporation chamber 17, there is @18°19
I was asked. Since the electron beam evaporation source requires a high vacuum of 16' Torr or more, it is also necessary to provide a certain degree of pressure difference, so it is preferable to provide each source with a vacuum evacuation system 20.21°22.

23 is a shutter, and 24 is an insulated terminal for introducing high voltage.

Next, the present invention will be specifically explained in detail.

[Example 1] As a substrate, a polyethylene terephthalate film (thickness: 12 μm, width: 16011 m, length: 1.ooo
m) was used.

The high frequency electrode is configured with 4 turns, and high frequency power ij,
It was controlled to 490W on 13.6611.

The GO evaporation source uses an electron beam heating method with aokV and maximum of 4 μm, and the evaporation source container is made of ZrO2 and C.

was supplied by melting and replenishing the evaporation source container with a rond having a diameter of 16 mm using a part of the power of the electron beam. The experimental results are shown in Table 1.

Kui Shimo White The invention in Table 1 has a can diameter of 5Q (ff.

This shows the case where a magnetic film with a thickness of 0.2 μm was formed at the same temperature of 70° C. 1 Invention B has a can diameter of 1100 cm.

The case where a magnetic film with a thickness of 0.2 μm was formed at the same temperature of 80'C is shown.

[Example 2] Using polyimide film (thickness 26 μm).

Table 2 shows the results of comparing the productivity and characteristics when implementing the present invention at a can temperature of 200'C with those using other methods.
show.

As is clear from the results shown in Table 19 and Table 2 above, the products manufactured by the non-inventive method have extremely small variations in properties in the longitudinal direction of the long products. Moreover, productivity is at an all-time high.

Note that the present invention is effective not only when a nonmagnetic base is disposed on the substrate, or when a two-layer structure is provided with a permalloy thin film, but also when such a structure is obtained on both sides of the substrate.

In addition, it is effective regardless of the type of substrate, and furthermore, as a magnetic film, C
This effect is not limited to o-Or, but is common to other perpendicular magnetization films containing Or.

As is clear from the above description, one aspect of the present invention is as follows.

It is capable of achieving both high productivity and production of high-quality perpendicularly magnetized films, and is ideal for obtaining long lengths of material regardless of the form of tape or disk.

Its industrial value is significant.

BRIEF DESCRIPTION OF THE DRAWINGS The figure is a diagram showing an example of an apparatus used to carry out the present invention. 1... Base body, 2... Cylindrical can, 6...
...00 go 3.9...High frequency electrode, 13
...Introduction nozzle.

Claims (2)

[Claims] (1) G on the base body moving along the circumferential side of the cylindrical can.
A method for producing a magnetic recording medium, which comprises directing a vapor flow containing O 2 and causing the vapor flow to pass through a plasma containing a gaseous Or 2 compound as a discharge material. (2) Claim 1, wherein the Or compound is a compound represented by 0r(C9H+S2)
A method for producing a magnetic recording medium as described in .