JPS58140393A - 単結晶シリコン引上装置 - Google Patents

単結晶シリコン引上装置

Info

Publication number
JPS58140393A
JPS58140393A JP57023328A JP2332882A JPS58140393A JP S58140393 A JPS58140393 A JP S58140393A JP 57023328 A JP57023328 A JP 57023328A JP 2332882 A JP2332882 A JP 2332882A JP S58140393 A JPS58140393 A JP S58140393A
Authority
JP
Japan
Prior art keywords
crystal silicon
pulling
cylinder
silicon
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57023328A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0142920B2 (enExample
Inventor
Hideyasu Matsuo
松尾　秀逸
Akio Karita
刈田　昭夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Priority to JP57023328A priority Critical patent/JPS58140393A/ja
Publication of JPS58140393A publication Critical patent/JPS58140393A/ja
Publication of JPH0142920B2 publication Critical patent/JPH0142920B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP57023328A 1982-02-16 1982-02-16 単結晶シリコン引上装置 Granted JPS58140393A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57023328A JPS58140393A (ja) 1982-02-16 1982-02-16 単結晶シリコン引上装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57023328A JPS58140393A (ja) 1982-02-16 1982-02-16 単結晶シリコン引上装置

Publications (2)

Publication Number Publication Date
JPS58140393A true JPS58140393A (ja) 1983-08-20
JPH0142920B2 JPH0142920B2 (enExample) 1989-09-18

Family

ID=12107508

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57023328A Granted JPS58140393A (ja) 1982-02-16 1982-02-16 単結晶シリコン引上装置

Country Status (1)

Country Link
JP (1) JPS58140393A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62138386A (ja) * 1985-12-11 1987-06-22 Shin Etsu Handotai Co Ltd 単結晶の引上装置
JPH0193489A (ja) * 1987-10-01 1989-04-12 Kyushu Electron Metal Co Ltd 半導体用単結晶の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62138386A (ja) * 1985-12-11 1987-06-22 Shin Etsu Handotai Co Ltd 単結晶の引上装置
JPH0193489A (ja) * 1987-10-01 1989-04-12 Kyushu Electron Metal Co Ltd 半導体用単結晶の製造方法

Also Published As

Publication number Publication date
JPH0142920B2 (enExample) 1989-09-18

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