JPS58140143A - Composite type semiconductor device - Google Patents

Abstract

PURPOSE:To contrive the super high density and enhance the mechanical strength, by solidly constituting a plurality of semiconductor substrates whereon a various kind of elements are formed. CONSTITUTION:The first semiconductor substrate 1 and the second semiconductor substrate 11 are so arranged that the main surfaces thereof become internal surfaces each other. The conduction guide 14 of the substrate 11 is connected to the conduction guide 4 of the substrate 1 corresponded thereto via a conductive ball 6 and soldering 7. Thereby, the both surfaces of the substrate 11 are used, and accordingly many circuit elements can be provided within a fixed space.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a composite semiconductor integrated circuit device, and is intended to achieve ultra-high density by three-dimensionally configuring the device.

Semiconductor integrated circuits (so-called IO), in which various elements are formed on a single semiconductor substrate and circuits are constructed from conductive paths printed on the surface of the substrate, are developed with the intention of increasing the density of electronic circuit devices. However, the circuit becomes complicated, and when resistors, capacitors, etc. that occupy a relatively large area are provided on a semiconductor substrate, the entire circuit inevitably becomes larger. Semiconductor substrates are limited in size due to manufacturing technology, and if a large circuit is to be made, the integrated circuit device itself must be made into a composite device.

Most conventional integrated circuit devices have a structure in which the main surface opposite the main surface on which the element is formed is fixed on a strong insulating support plate such as ceramic, so when compounded, it spreads horizontally in a plane. Therefore, the opposing principal surfaces cannot be used as a circuit.

SUMMARY OF THE INVENTION An object of the present invention is to eliminate the above-mentioned drawbacks and provide a three-dimensional integrated circuit device that can be easily assembled, has mechanical strength, and is stable in electrical connection.

The composite semiconductor device of the present invention includes a first semiconductor thin plate including a plurality of circuit elements disposed along a main surface and a conductive path extending on the main surface connected to the circuit elements, and at least one a second semiconductor thin plate including a circuit element and another conductive path connected to the circuit element and extending on the main surface, the first and second semiconductor thin plates having their main surfaces facing each other; The conductive path on the second semiconductor thin plate is connected to the corresponding conductive path on the first semiconductor thin plate via a conductive material portion, and the conductive path is connected to the first semiconductor thin plate through the conductive material portion. The second semiconductor thin plates are characterized in that they are integrally fixed to each other.

Embodiments according to the present invention will be described below with reference to the drawings.

In the figure, reference numerals 1 and 11 each represent a semiconductor single crystal thin plate made of silicon or the like, and the thin plate 1 includes a plurality of circuit elements 2 arranged on one main surface thereof. On the other hand, the thin plate 11 includes a plurality of circuit elements 12 along both main surfaces thereof. The circuit elements 2 and 12 are active elements such as transistors and diodes, or passive elements such as resistive capacitors, using Pn junctions formed by selective diffusion of impurities. The main surface of each thin plate is covered with silicon oxide G5 or 15 thermally generated from the silicon substrate. Insulating film 3 or 1
3 may be siag or silicon nitride deposited from the gas phase. On each thin plate, a conductive path 4 or 14 is provided which connects to each circuit element 2 or 12 and extends over an insulating film 3 or 13, and is further covered with an insulating layer 5 or 15, respectively. As the insulating layer 5 or 15, a common glass containing components such as rP*oi, Room, PbO or silicon nitride deposited from the vapor phase can be used. The bidirectional conductive thin plates 1 and 11 are arranged so that their main surfaces face each other, and the conductive path on one main surface of one thin plate is connected to the conductive ball 6 and the conductive path on one main surface of the other thin plate. They are electrically connected by solder material 7, and both thin plates are fixed together by such conductive mail 6 and solder material 7.

Each i-conductor can be connected to an external circuit by providing an electrode layer on the side surface of the semiconductor thin plate or on the other main surface. Further, instead of being provided as a circuit element in the semiconductor thin plate, a resistive material layer or a passive element having a metal layer-dielectric layer-metal layer structure may be provided on the glass layer 5 or 15.

Since the present invention has the configuration described above, compared to the structure of conventional integrated circuits, (1) both sides of a semiconductor thin plate can be used, and (2) a large number of circuit elements can be configured within a certain space. (3) electrical connections between circuit elements can be made reliably and easily; and (4) mechanical strength is high.

[Brief explanation of drawings]

FIG. 1 is a sectional view showing an embodiment according to the present invention. 1...First semiconductor substrate 11...Second semiconductor substrate 2.12... @ path element 3.13...Oxide film 4.14... Conductive path 5.15...Insulating layer 6... Conductive adhesive material 7...Solder material that's all

Claims (1)

[Claims] a first semiconductor thin plate including a plurality of circuit elements arranged over a main surface and a conductive path extending on the main surface connected to the circuit elements; at least one circuit element and a conductive path connected to the circuit element; a second semiconductor thin plate including another conductive path extending on the main surface, the first and second semiconductor thin plates are arranged such that their main surfaces face each other, and the second semiconductor thin plate The conductive path is connected to the corresponding conductive path on the first semiconductor thin plate via a conductive material portion, and the first and second semiconductor thin plates are integrally fixed to each other by the conductive material portion. Composite semiconductor device.