JPH01209746A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH01209746A JPH01209746A JP63035908A JP3590888A JPH01209746A JP H01209746 A JPH01209746 A JP H01209746A JP 63035908 A JP63035908 A JP 63035908A JP 3590888 A JP3590888 A JP 3590888A JP H01209746 A JPH01209746 A JP H01209746A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- polyimide
- electrode
- stress
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 229910000679 solder Inorganic materials 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 229920006015 heat resistant resin Polymers 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 abstract description 18
- 239000004642 Polyimide Substances 0.000 abstract description 16
- 239000004020 conductor Substances 0.000 abstract description 10
- 229920005989 resin Polymers 0.000 abstract description 10
- 239000011347 resin Substances 0.000 abstract description 10
- 230000004888 barrier function Effects 0.000 abstract description 9
- 239000002184 metal Substances 0.000 abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 229910010272 inorganic material Inorganic materials 0.000 abstract description 2
- 239000011147 inorganic material Substances 0.000 abstract description 2
- 239000007769 metal material Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 35
- 230000000694 effects Effects 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000005260 alpha ray Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置に関し、特にはんだバンブ電極を有
するフリップチップ型の半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device, and particularly to a flip-chip type semiconductor device having a solder bump electrode.
第3図は従来の半導体装置の一例の断面図である。 FIG. 3 is a sectional view of an example of a conventional semiconductor device.
半導体装置は、シリコン基板1の表面に設けられた電極
2上にバリアメタル9を介してはんだバンプ10を有し
て構成されている。The semiconductor device includes solder bumps 10 on electrodes 2 provided on the surface of a silicon substrate 1 with barrier metal 9 interposed therebetween.
パッシベーション膜3としては、シリコン酸化膜や窒化
膜、あるいはポリイミド樹脂等の樹脂パッシベーション
膜が使用される場合もあった。As the passivation film 3, a silicon oxide film, a nitride film, or a resin passivation film such as polyimide resin has been used in some cases.
上述した従来の半導体装置は、はんだバンブ電極がAN
電極上に直接バリアメタルを形成しているので、バンプ
の下地層の構造には、はんだバンブ電極を設けた半導体
装置を搭載基板上に搭載した後で接続部分が受ける機械
的応力を吸収する機能がなく、その応力の大部分がバン
ブ電極そのものに委ねられていた。In the conventional semiconductor device described above, the solder bump electrode is AN
Since the barrier metal is formed directly on the electrode, the structure of the bump underlayer has a function to absorb the mechanical stress that is applied to the connection part after the semiconductor device with the solder bump electrode is mounted on the mounting board. There was no stress, and most of the stress was left to the bump electrode itself.
一般にフリッ、ブチツブを実装する場合に信頼性上特に
問題とされる点は、搭載基板とフリップチップ間の熱膨
張係数の差によって生じる応力による接続部分の劣化で
あるが、従来のはんだバンプ構造にはこれら応力を吸収
する働きが非常に小さいので、半導体装置が劣化すると
いう問題があった。Generally speaking, when mounting flip-chips, a particular problem in terms of reliability is deterioration of the connection part due to stress caused by the difference in thermal expansion coefficient between the mounting board and the flip-chip. Since the function of absorbing these stresses is very small, there is a problem that the semiconductor device deteriorates.
本発明の目的は、はんだバンプを搭載基板に接続した後
の応力による劣化の生じない半導体装置を提供すること
にある。An object of the present invention is to provide a semiconductor device that does not suffer from deterioration due to stress after solder bumps are connected to a mounting board.
本発明の半導体装置は、半導体基板の一主面に形成され
たAe電極と前記半導体基板の上に設けられかつ前記へ
2電極に接続するはんだバンプとを有する半導体装置に
おいて、前記^e電極と前記はんだバンプの下部電極と
の間に複数の低応力耐熱性樹脂層及び少なくとも1層の
導電層からなる多層配線層を含んで構成されている。The semiconductor device of the present invention includes an Ae electrode formed on one main surface of a semiconductor substrate and a solder bump provided on the semiconductor substrate and connected to the two electrodes. A multilayer wiring layer including a plurality of low stress heat resistant resin layers and at least one conductive layer is provided between the solder bump and the lower electrode.
次に、本発明の実施例について図面を参照して説明する
。Next, embodiments of the present invention will be described with reference to the drawings.
第1図は本発明の第1の実施例の断面図である。FIG. 1 is a sectional view of a first embodiment of the invention.
半導体装置は、シリコン基板1の表面のke電極2の上
に、第1導電層5と第2ポリイミド層6と第2導電層7
の多層配線層を介してはんだバンプ10を接続するバリ
アメタル層9を形成している。The semiconductor device includes a first conductive layer 5, a second polyimide layer 6, and a second conductive layer 7 on the ke electrode 2 on the surface of a silicon substrate 1.
A barrier metal layer 9 is formed to connect the solder bumps 10 via the multilayer wiring layer.
第1導体層5はAf電極2の上から横の第1ポリイミド
層の上に延び、そこで第2導体層7とP面で接続し、A
N電極2とバリアメタル層9はジグザグに接続され、機
械的にも柔い構造である。The first conductor layer 5 extends from above the Af electrode 2 to the lateral first polyimide layer, and is connected there to the second conductor layer 7 in the P plane.
The N electrode 2 and the barrier metal layer 9 are connected in a zigzag pattern and have a mechanically flexible structure.
ポリイミドは耐熱性を有し、微細パターン化の可能な樹
脂として広く用いられているが、無機材料、金属材料に
比較して弾性係数が約2折紙いために発生する応力は小
さいものとなる。Polyimide has heat resistance and is widely used as a resin that can be formed into fine patterns, but compared to inorganic materials and metal materials, polyimide has an elastic modulus of about 2 or less, so the stress generated is small.
また、他から加わる応力を吸収する効果も生じる。It also has the effect of absorbing stress applied from other sources.
本実施例では、この低応力樹脂であるポリイミド層をは
んだバンプ10の下方に厚く形成している。In this embodiment, a polyimide layer, which is a low-stress resin, is formed thickly below the solder bumps 10.
樹脂層と導体層の暦数を増減することにより所望の厚み
を設定できる
ポリイミドの場合、その弾性率と膜厚によって応力が異
なってくるが(たとえば昭和59年電子通信学会総合全
国大会1−24)、適度な応力吸収の効果を得、かつポ
リイミドそのものから発生する応力の影響を受けぬ様に
するためには、ポリイミドの膜厚は20〜200μmぐ
らいが適切である。In the case of polyimide, the desired thickness can be set by increasing or decreasing the number of resin layers and conductor layers, and the stress varies depending on its elastic modulus and film thickness (for example, the 1981 IEICE General National Conference 1-24 ), in order to obtain an appropriate stress absorption effect and to avoid being influenced by the stress generated by the polyimide itself, the appropriate thickness of the polyimide film is about 20 to 200 μm.
通常、ポリイミドの場合、良好にパターン化可能な一層
の厚みは2〜20μm程度であるため、十分な厚みを得
るためには本実施例のように多層構造にする必要がある
。Normally, in the case of polyimide, the thickness of one layer that can be well patterned is about 2 to 20 μm, so in order to obtain a sufficient thickness, it is necessary to have a multilayer structure as in this example.
また、各導体層は、スパッタ法、蒸着法、めっき法にて
形成可能な単層又は多層構造とすることができる。Furthermore, each conductor layer can have a single layer or multilayer structure that can be formed by sputtering, vapor deposition, or plating.
第2図は本発明の第2の実施例の断面図である。FIG. 2 is a sectional view of a second embodiment of the invention.
半導体装置は、耐熱性樹脂層と配線層とにより多層配線
を行なう事は第1の実施例と同様であるが、第2導電層
7を一方のはんだバンプ10の下のバリアメタル層9及
び第1導電層5の面Pに接続だけでなく、他方のバリア
メタル層9.及び第1導電層51の面Qに接続する配線
または電極引出し配線として兼用している。The semiconductor device is similar to the first embodiment in that multilayer wiring is formed using a heat-resistant resin layer and a wiring layer, but the second conductive layer 7 is connected to the barrier metal layer 9 under one solder bump 10 and the second conductive layer 7. 1 conductive layer 5, as well as the other barrier metal layer 9. It also serves as a wiring connected to the surface Q of the first conductive layer 51 or an electrode lead wiring.
厚い低応力樹脂層と電極引き出し配線とによってバンプ
下部構造を形成する場合に、バンブ電極の配置はAl電
極2.2fiの垂直上方に限定する必要はなくなるとい
う効果がある。When the bump lower structure is formed by a thick low-stress resin layer and electrode lead wiring, there is an effect that the arrangement of the bump electrodes does not need to be limited to vertically above the Al electrodes 2.2fi.
以上説明したように本発明は、バンプ下地層を耐熱性低
応力樹脂層と導体配線層とによって形成することにより
、フリップチップ形の半導体装置を搭載後に発生する応
力をバンプの下地層により吸収させることができる。As explained above, the present invention allows the bump underlayer to absorb stress generated after a flip-chip type semiconductor device is mounted by forming the bump underlayer with a heat-resistant, low-stress resin layer and a conductive wiring layer. be able to.
また、導体層を利用して半導体チップ上に配線を行なう
ことができ、バンブ電極を任意の場所に配置させること
ができ、この際、半導体チップの機能部に与えるダメー
ジについて考慮する必要が少なくなる。Additionally, it is possible to conduct wiring on the semiconductor chip using the conductor layer, and bump electrodes can be placed anywhere, reducing the need to consider damage to the functional parts of the semiconductor chip. .
またその結果、半導体チップ表面に厚い(M脂層を形成
することができ、半導体素子表面の保護効果やα線遮へ
い効果を付与することも容易となる。Further, as a result, a thick M fat layer can be formed on the surface of the semiconductor chip, and it becomes easy to provide a protective effect on the surface of the semiconductor element and an α-ray shielding effect.
本発明によって得られるフリップチップ形半導体装置は
、従来のように搭載基板との熱膨張係数の差を考慮する
必要が少なくなり、バンプ配置やバンプサイズを自由に
設定できることから、チップ搭載基板は廉価なセラミッ
ク基板や樹脂基板を使用するも可能となり、同時に高い
接続信頼性を得ることができる。The flip-chip type semiconductor device obtained by the present invention eliminates the need to consider the difference in thermal expansion coefficient with the mounting substrate as in the past, and the bump arrangement and bump size can be freely set, making the chip mounting substrate inexpensive. This makes it possible to use ceramic substrates or resin substrates, and at the same time, it is possible to obtain high connection reliability.
第1図は本発明の第1の実施例の断面図、第2図は本発
明の第2の実施例の断面図、第3図は従来の半導体装置
の一例の断面図である。
1・・・シリコン基板、2・・・Ae主電極3・・・表
面保護膜、4・・・第1ポリイミド層、5・・・第1導
電膜、6・・・第2ポリイミド層、7・・・第2導電層
、8・・・第2ポリイミド層、9・・・バリヤメタル層
、10・・・はんだバンプ。
第 1 図FIG. 1 is a sectional view of a first embodiment of the invention, FIG. 2 is a sectional view of a second embodiment of the invention, and FIG. 3 is a sectional view of an example of a conventional semiconductor device. DESCRIPTION OF SYMBOLS 1... Silicon substrate, 2... Ae main electrode 3... Surface protective film, 4... First polyimide layer, 5... First conductive film, 6... Second polyimide layer, 7 ... second conductive layer, 8 ... second polyimide layer, 9 ... barrier metal layer, 10 ... solder bump. Figure 1
Claims (1)
体基板の上に設けられかつ前記Al電極に接続するはん
だバンプとを有する半導体装置において、前記Al電極
と前記はんだバンプの下部電極との間に複数の低応力耐
熱性樹脂層及び少なくとも1層の導電層からなる多層配
線層を含むことを特徴とする半導体装置。In a semiconductor device having an Al electrode formed on one main surface of a semiconductor substrate and a solder bump provided on the semiconductor substrate and connected to the Al electrode, between the Al electrode and the lower electrode of the solder bump. 1. A semiconductor device comprising: a multilayer wiring layer comprising a plurality of low-stress heat-resistant resin layers and at least one conductive layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63035908A JPH01209746A (en) | 1988-02-17 | 1988-02-17 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63035908A JPH01209746A (en) | 1988-02-17 | 1988-02-17 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01209746A true JPH01209746A (en) | 1989-08-23 |
Family
ID=12455129
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63035908A Pending JPH01209746A (en) | 1988-02-17 | 1988-02-17 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01209746A (en) |
Cited By (16)
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---|---|---|---|---|
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US6191493B1 (en) | 1993-02-18 | 2001-02-20 | Mitsubishi Denki Kabushiki Kaisha | Resin seal semiconductor package and manufacturing method of the same |
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-
1988
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EP1589329A4 (en) * | 2003-01-30 | 2011-09-28 | Fujikura Ltd | Semiconductor pressure sensor and process for fabricating the same |
EP1589329A1 (en) * | 2003-01-30 | 2005-10-26 | Fujikura Ltd. | Semiconductor pressure sensor and process for fabricating the same |
DE102004028572B4 (en) * | 2004-06-15 | 2008-08-14 | Qimonda Ag | Redistribution device for electronic components |
DE102004028572A1 (en) * | 2004-06-15 | 2006-01-12 | Infineon Technologies Ag | Re-wiring device for electronic component, has conducting paths arranged in two sections, which run in respective planes arranged over one another, where planes are insulated form each other and lengths of sections are same |
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