JPS58140123A - ドライエツチング方法 - Google Patents

ドライエツチング方法

Info

Publication number
JPS58140123A
JPS58140123A JP57023819A JP2381982A JPS58140123A JP S58140123 A JPS58140123 A JP S58140123A JP 57023819 A JP57023819 A JP 57023819A JP 2381982 A JP2381982 A JP 2381982A JP S58140123 A JPS58140123 A JP S58140123A
Authority
JP
Japan
Prior art keywords
etching
pressure
chamber pressure
end point
value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57023819A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0312453B2 (enExample
Inventor
Hitoshi Kudo
均 工藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP57023819A priority Critical patent/JPS58140123A/ja
Publication of JPS58140123A publication Critical patent/JPS58140123A/ja
Publication of JPH0312453B2 publication Critical patent/JPH0312453B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP57023819A 1982-02-16 1982-02-16 ドライエツチング方法 Granted JPS58140123A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57023819A JPS58140123A (ja) 1982-02-16 1982-02-16 ドライエツチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57023819A JPS58140123A (ja) 1982-02-16 1982-02-16 ドライエツチング方法

Publications (2)

Publication Number Publication Date
JPS58140123A true JPS58140123A (ja) 1983-08-19
JPH0312453B2 JPH0312453B2 (enExample) 1991-02-20

Family

ID=12120958

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57023819A Granted JPS58140123A (ja) 1982-02-16 1982-02-16 ドライエツチング方法

Country Status (1)

Country Link
JP (1) JPS58140123A (enExample)

Also Published As

Publication number Publication date
JPH0312453B2 (enExample) 1991-02-20

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