JPS58140123A - ドライエツチング方法 - Google Patents

ドライエツチング方法

Info

Publication number
JPS58140123A
JPS58140123A JP57023819A JP2381982A JPS58140123A JP S58140123 A JPS58140123 A JP S58140123A JP 57023819 A JP57023819 A JP 57023819A JP 2381982 A JP2381982 A JP 2381982A JP S58140123 A JPS58140123 A JP S58140123A
Authority
JP
Japan
Prior art keywords
etching
pressure
etching chamber
discharge
chamber pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57023819A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0312453B2 (OSRAM
Inventor
Hitoshi Kudo
均 工藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP57023819A priority Critical patent/JPS58140123A/ja
Publication of JPS58140123A publication Critical patent/JPS58140123A/ja
Publication of JPH0312453B2 publication Critical patent/JPH0312453B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P50/00

Landscapes

  • Drying Of Semiconductors (AREA)
JP57023819A 1982-02-16 1982-02-16 ドライエツチング方法 Granted JPS58140123A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57023819A JPS58140123A (ja) 1982-02-16 1982-02-16 ドライエツチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57023819A JPS58140123A (ja) 1982-02-16 1982-02-16 ドライエツチング方法

Publications (2)

Publication Number Publication Date
JPS58140123A true JPS58140123A (ja) 1983-08-19
JPH0312453B2 JPH0312453B2 (OSRAM) 1991-02-20

Family

ID=12120958

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57023819A Granted JPS58140123A (ja) 1982-02-16 1982-02-16 ドライエツチング方法

Country Status (1)

Country Link
JP (1) JPS58140123A (OSRAM)

Also Published As

Publication number Publication date
JPH0312453B2 (OSRAM) 1991-02-20

Similar Documents

Publication Publication Date Title
KR920010726B1 (ko) 반도체 제조장치의 크리닝 종점 판정방법
EP0151947B1 (en) Method of plasma etching
US4383431A (en) Auto-zero system for pressure transducers
US20140295583A1 (en) Plasma processing apparatus and plasma processing method
US4936967A (en) Method of detecting an end point of plasma treatment
US6964187B2 (en) Vacuum sensor
EP0086816B1 (en) Plasma etching apparatus and method including end point detection
JPS58140123A (ja) ドライエツチング方法
JP3372840B2 (ja) ドライエッチング装置およびガス流量制御の検査方法
JPS63200533A (ja) プラズマ処理装置
JPS58140127A (ja) ドライエツチング方法
JPS58140126A (ja) ドライエツチング方法
JP4143176B2 (ja) プラズマ処理方法
JPH05102087A (ja) プラズマエツチング終点モニタリング方法
JPS6315133A (ja) 真空リ−クチエツク方法
JP3195695B2 (ja) プラズマ処理方法
JPH0597579A (ja) 半導体製造装置
JP3181388B2 (ja) 観測信号の変動周期算出方法及びそれを用いたプラズマ装置
JP2934415B2 (ja) リーク量測定装置
JP3371924B2 (ja) 逆拡散測定によるヘリウムリーク量検出方法
RU2832004C1 (ru) Способ детектирования момента окончания кондиционирования реактора установки плазмохимического травления
JP2000124198A (ja) プラズマエッチング装置及びプラズマエッチング方法
JPH0468772B2 (OSRAM)
US20180068908A1 (en) Smart in situ chamber clean
JPH0922900A (ja) プラズマ処理方法