JPS58134431A - プラズマｃｖｄ装置 - Google Patents

プラズマｃｖｄ装置

Info

Publication number
JPS58134431A
JPS58134431A JP1690982A JP1690982A JPS58134431A JP S58134431 A JPS58134431 A JP S58134431A JP 1690982 A JP1690982 A JP 1690982A JP 1690982 A JP1690982 A JP 1690982A JP S58134431 A JPS58134431 A JP S58134431A
Authority
JP
Japan
Prior art keywords
electrode
plasma cvd
substrate
heater
heated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1690982A
Other languages
English (en)
Japanese (ja)
Other versions
JPH029446B2 (enrdf_load_stackoverflow
Inventor
Yoshimi Shiotani
喜美 塩谷
Yasushi Ooyama
泰 大山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP1690982A priority Critical patent/JPS58134431A/ja
Publication of JPS58134431A publication Critical patent/JPS58134431A/ja
Publication of JPH029446B2 publication Critical patent/JPH029446B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
JP1690982A 1982-02-04 1982-02-04 プラズマｃｖｄ装置 Granted JPS58134431A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1690982A JPS58134431A (ja) 1982-02-04 1982-02-04 プラズマｃｖｄ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1690982A JPS58134431A (ja) 1982-02-04 1982-02-04 プラズマｃｖｄ装置

Publications (2)

Publication Number Publication Date
JPS58134431A true JPS58134431A (ja) 1983-08-10
JPH029446B2 JPH029446B2 (enrdf_load_stackoverflow) 1990-03-02

Family

ID=11929257

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1690982A Granted JPS58134431A (ja) 1982-02-04 1982-02-04 プラズマｃｖｄ装置

Country Status (1)

Country Link
JP (1) JPS58134431A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60182131A (ja) * 1984-02-28 1985-09-17 Sumitomo Electric Ind Ltd 薄膜製造装置
JPS62165910A (ja) * 1986-01-17 1987-07-22 Hitachi Ltd 半導体製造装置
US6450803B2 (en) 1998-01-12 2002-09-17 Tokyo Electron Limited Heat treatment apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50748A (enrdf_load_stackoverflow) * 1973-05-02 1975-01-07
JPS5559727A (en) * 1978-10-27 1980-05-06 Hitachi Ltd Plasma deposition device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50748A (enrdf_load_stackoverflow) * 1973-05-02 1975-01-07
JPS5559727A (en) * 1978-10-27 1980-05-06 Hitachi Ltd Plasma deposition device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60182131A (ja) * 1984-02-28 1985-09-17 Sumitomo Electric Ind Ltd 薄膜製造装置
JPS62165910A (ja) * 1986-01-17 1987-07-22 Hitachi Ltd 半導体製造装置
US6450803B2 (en) 1998-01-12 2002-09-17 Tokyo Electron Limited Heat treatment apparatus

Also Published As

Publication number Publication date
JPH029446B2 (enrdf_load_stackoverflow) 1990-03-02

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