JPS58128779A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS58128779A JPS58128779A JP57011372A JP1137282A JPS58128779A JP S58128779 A JPS58128779 A JP S58128779A JP 57011372 A JP57011372 A JP 57011372A JP 1137282 A JP1137282 A JP 1137282A JP S58128779 A JPS58128779 A JP S58128779A
- Authority
- JP
- Japan
- Prior art keywords
- base
- semiconductor device
- semiconductor element
- semiconductor
- metallic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 66
- 239000011521 glass Substances 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims description 49
- 238000007789 sealing Methods 0.000 claims 1
- 238000004891 communication Methods 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 9
- 239000013307 optical fiber Substances 0.000 description 9
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/4823—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a pin of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は金属基台上に半導体素子を載置した半導体装置
の構造に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to the structure of a semiconductor device in which a semiconductor element is mounted on a metal base.
一般に前記金属基台、たとえば金属ステムを用いた半導
体装置に於いては、ガラスを介して外部導出リードを固
着してなる金属ステム上に半導体素子を固定し、半導体
素子の電極と外部導出リードとを金属細線で電気的に接
続した後、金属キヤ、プで半導体装置内部を気密に封止
した構造を有し℃いる。最近、これら半導体装置に対し
半導体装置が組み込まれて使用されるシステムの実装密
度をあげるため半導体装置を小１化する要求が高まって
いる。Generally, in a semiconductor device using a metal base, for example, a metal stem, a semiconductor element is fixed on a metal stem with external leads fixed through glass, and the electrodes of the semiconductor element and the external leads are connected. It has a structure in which the inside of the semiconductor device is hermetically sealed with a metal cap and a metal cap after electrically connecting them with thin metal wires. Recently, there has been an increasing demand for miniaturization of these semiconductor devices in order to increase the packaging density of systems in which the semiconductor devices are incorporated and used.
しかるに上述した従来の半導体装置に於いては、半導体
素子の電極と外部導出リード間を接続するための金属細
線はどうしてもステムベース上に突出してしまう為、小
屋化のために金属キャップの高さを低くしようとしても
、金属細線が金属キャップに接触して電気的に短絡する
と−・う欠点があり、小型化が制限されるという問題を
有している。However, in the above-mentioned conventional semiconductor device, the thin metal wire for connecting the electrode of the semiconductor element and the external lead inevitably protrudes above the stem base, so the height of the metal cap has to be reduced in order to form a shed. Even if an attempt is made to lower the cap, there is a problem in that if the thin metal wire comes into contact with the metal cap and causes an electrical short circuit, miniaturization is restricted.
また、このような金属ステムな使用した半導体装置で特
に光通信に使用される半導体装置に於いては、半導体素
子より発光した光もしくは受光すべき光を伝達する媒体
、例えば光ファイバーと効率よく結合するには、光ファ
イバーの端面な半導体素子の発光面に近接させることが
１豐となる。In addition, in semiconductor devices using such a metal stem, especially those used for optical communication, it is possible to efficiently couple the light emitted from the semiconductor element or the light to be received with a medium for transmitting it, such as an optical fiber. One way to do this is to bring the end of the optical fiber close to the light emitting surface of the semiconductor element.
この為、従来の光通信用半導体装置に於いては、金属ス
テム上に半導体素子を固定し、半導体素子の電極と外部
溝ｍ ＩＪ−ドとを金属細線で電気−に接続した後、半
導体素子を保護する為の樹脂をボッティングして素子な
封止した構造を有している。For this reason, in conventional semiconductor devices for optical communication, the semiconductor element is fixed on a metal stem, and the electrodes of the semiconductor element and the external groove are electrically connected with thin metal wires. It has a structure in which the element is sealed with resin to protect it.
しかしこの構造によれば、半導体素子を封止することは
できても、金属細線が樹脂より突出してしまう為、光フ
ァイバーを半導体素子に近接させ固定する際、光ファイ
バーが容易に金属細線に接触してしまう。このため、金
属細線が変形しステムベースと電気的に短絡したり、金
属細線が断線する等の危険が多く信頼度上の欠点を有し
ている。However, with this structure, although the semiconductor element can be sealed, the thin metal wire protrudes from the resin, so when the optical fiber is fixed close to the semiconductor element, the optical fiber easily comes into contact with the thin metal wire. Put it away. For this reason, there are many risks such as deformation of the thin metal wire and electrical short circuit with the stem base, or breakage of the thin metal wire, which has drawbacks in terms of reliability.
本発明は従来のかかる欠点を除去し、金属細線の短絡事
故や新線事故をおこすことなく形状を小型化した半導体
装置を提供することを目的とするもので、金属細線の接
続経路に対応して基台上に凹部を設け、これによって金
属細線の橋絡位置を従来よりも下げたことを特徴とする
。尚、このために素子な凹部内に載置するよ５にし【も
−向差し支えない。The present invention aims to eliminate such drawbacks of the conventional technology and provide a semiconductor device whose size is reduced without causing short-circuit accidents or new line accidents in thin metal wires. A feature is that a concave portion is provided on the base, thereby lowering the bridging position of the thin metal wires compared to the conventional method. Incidentally, for this purpose, the element may be placed in the recessed portion in either direction.
以下本発明をよりよく理解できるように従来の半導体装
置ならびに本発明の半導体装置の実施例につき図面を参
照して説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS In order to better understand the present invention, examples of a conventional semiconductor device and a semiconductor device of the present invention will be described below with reference to the drawings.
第１図、第２図はそれぞれ従来の金属キャップ型半導体
装置および光通信用の樹脂封止型半導体装曾の縦断面図
である。第１図（第２図）に於いて、１００（２’００
）は金属ステムで、ステムベース１０１（２０１）の貫
通孔１０２（２０２）を通し、ガラス１０３（２０３）
によってこれと絶縁された外部導出リー゛ド１０４（２
０４）が封着されている。半導体素子１０５（２０５）
は表面が平担なステムベース１０１（２０１）上に固定
され、半導体素子１０５（２０５）のｔ硬（図示せず）
と前記外部導出リード１０４（２０４）とは金属線１ｓ
１０６（２０６）Ｋより電気的に接続されている。しか
る後、第１図の従来の半導体装置に於いては、金属キャ
ップ１０７で半導体装置内部を気密に封止している。1 and 2 are vertical sectional views of a conventional metal cap type semiconductor device and a conventional resin-sealed semiconductor device for optical communication, respectively. In Figure 1 (Figure 2), 100 (2'00
) is a metal stem, which is passed through the through hole 102 (202) of the stem base 101 (201) and inserted into the glass 103 (203).
External lead 104 (2) insulated from this by
04) is sealed. Semiconductor element 105 (205)
is fixed on the stem base 101 (201) with a flat surface, and the t hardness (not shown) of the semiconductor element 105 (205) is fixed on the stem base 101 (201) with a flat surface.
and the external lead-out lead 104 (204) is a metal wire 1s.
It is electrically connected from 106 (206)K. Thereafter, in the conventional semiconductor device shown in FIG. 1, the inside of the semiconductor device is hermetically sealed with a metal cap 107.
このような第１図の従来の半導体装置に於いては、半導
体素子１０５の電極と外部導出リード１０４間を接続す
る金属細線１０６はすべてステムベース１０１上に突出
している為、金属キャップ１０７の高さを低くすると、
金属線＠１０６が金属キャップ１０７に＠触し電気的に
短絡するという欠点があり、半導体装置の小部化が制限
されるという問題を有している。In the conventional semiconductor device shown in FIG. If you lower the
There is a drawback that the metal wire @106 touches the metal cap 107 and causes an electrical short circuit, and there is a problem that miniaturization of the semiconductor device is restricted.
ま、た、第２図に示す従来の光通信用半導体装置に於い
ては、金属ステム２００の表面が平担なステムベース２
０１上に半導体素子２０５を固定し半導体素子２０５の
電極と外部導出リード２０４とを金属細線２０・６で電
気的Ｋｌ！続した後、半導体素子２０５上に保膜用の樹
脂２０７をボッティングし封止した構造を有し【いる。Furthermore, in the conventional optical communication semiconductor device shown in FIG. 2, the metal stem 200 has a flat surface.
The semiconductor element 205 is fixed on the 01, and the electrodes of the semiconductor element 205 and the external leads 204 are electrically connected using thin metal wires 20 and 6. After this, a film-retaining resin 207 is potted onto the semiconductor element 205 to form a sealed structure.
従来のかかる光通信用半導体装置に於いては、金属細線
２０６が半導体素子２０５まだ、場合によってｉ樹脂２
０６より突出している為、光７アイパー２０８（第２図
中に点線で示す）を半導体素子２０５に近接させ固定す
る際に光ファーイバーが直接もしくは樹脂２０６を介し
て金属細線２０６を圧迫することにより、金属線＠２０
６が変形しステムベースと電気的に４［１１１Ｌ、たり
、金属細線、２０６が断線する危険がある等の信頼上の
欠点を有している。In such a conventional semiconductor device for optical communication, the thin metal wire 206 is connected to the semiconductor element 205 and, in some cases, to the i-resin 2.
06, when the optical fiber 208 (indicated by a dotted line in FIG. 2) is brought close to and fixed to the semiconductor element 205, the optical fiber presses the thin metal wire 206 directly or through the resin 206. , metal wire @20
6 is deformed and electrically connected to the stem base, and there is a risk that the thin metal wire 206 may be disconnected.
次に本発明の一実施例につき図面を参照しズ説゛明する
。Next, one embodiment of the present invention will be explained with reference to the drawings.
第３図（ｍｌは本発明の半導体装置の一実施例を示す縦
断面図、第３図（ｂ）は第３図（ｉ）の半導体装置の、
金属キャップを除いた上面図であり、第４図は光通信用
半導体に係る本発明の他の実施例を示す縦断面図である
。FIG. 3 (ml is a vertical cross-sectional view showing one embodiment of the semiconductor device of the present invention, FIG. 3(b) is a vertical cross-sectional view of the semiconductor device of FIG. 3(i),
FIG. 4 is a top view with the metal cap removed, and FIG. 4 is a longitudinal sectional view showing another embodiment of the present invention related to a semiconductor for optical communication.
第３図（ａ）、 （ｂ）、 （第４図）に於いて３０
０（４００）は金属ステムでステムベース３０１（４０
１）の゛貫通孔３０２（４０２）を通し、ガラス５６ａ
（４ｏｓ）によりでこれから絶縁さ゛れた外部導出リー
ド３０４（４０４）が封着されている。In Figure 3 (a), (b), (Figure 4), 30
0 (400) is a metal stem and stem base 301 (40
1) Through the through hole 302 (402), the glass 56a
An external lead-out lead 304 (404) insulated from this is sealed with (4os).
前記ステムベース３０１（４０１）の上面には半導体素
子３０５（４０５’）の載置部３０８（４０８）を含み
前記金属細線３０６（４０６）の接ｆＥｖｋ路に対応し
た凹部３０９（４０９）が形成されて、いる。半導体素
子３０５（４０５）は前記ステムベース３０１（４０１
）の凹部３０９（４０９）の載置部３０８（４０８）上
に固定され、半導体素子３０５（４０５）の電極と前記
外部導出リード３０４（４０４）とは金属細線３０６（
４０６）により凹部３０９（４０９）を通りて電気的に
接続されている。A recess 309 (409) is formed on the upper surface of the stem base 301 (401), which includes a mounting portion 308 (408) for the semiconductor element 305 (405') and corresponds to the tangential fEvk path of the thin metal wire 306 (406). ing. The semiconductor element 305 (405) is attached to the stem base 301 (401
), and the electrodes of the semiconductor element 305 (405) and the external leads 304 (404) are connected to the thin metal wire 306 (
406) through the recess 309 (409).
しかる後、第３図の実施例においては金属キャップ３０
７で半導体装置内部が気密に両正される。Thereafter, in the embodiment of FIG.
In step 7, the inside of the semiconductor device is sealed airtight.
このような構造の半導体装置に於いては、ステムベース
３０１に凹部３０９を形成することにより半導体素子３
０５、金属細線３０６がステムベース３０１の面上にで
きる限り突出しないような構造とすることがで館るため
、金属キャップ３０７とステムベースとの間隔をできる
限り小さくすることができ、それでも金属細線３０６と
キャップとが接触する危険性を十分回避で館小臘で信一
度の高い半導体装置を提供することができる。In a semiconductor device having such a structure, by forming a recess 309 in the stem base 301, the semiconductor element 3
05. Since the structure can be such that the thin metal wire 306 does not protrude as much as possible on the surface of the stem base 301, the distance between the metal cap 307 and the stem base can be made as small as possible, and the thin metal wire 306 can still It is possible to sufficiently avoid the risk of contact between the 306 and the cap, and provide a highly reliable semiconductor device in a small space.
また、第４図に示す樹脂封止型の他の実施例に於いては
、前記ステムベース４０１の凹部４０９において半導体
素子４０５および金属細線４０６を保護する為の樹脂４
０７がキャスティングされている。このように光通信用
半導体装置に於いても、半導体素子４０５と金属細線４
０６とがステ五ベース４０１０面上に突出しないような
構造とするができるため、光ファイバー４１０（第４図
中に点線で示す）を半導体素子４０５に近接して固定す
ることができる。しかも、光ファイバーが金属細線４０
６に接触するのを完全に防止でき、金属細線４０６がス
テムベース４０１と電気的に短絡したり、金属細線４０
６の断線を生じることのない信頼度の高い半導体装置を
提供することができる。Further, in another embodiment of the resin-sealed type shown in FIG.
07 has been cast. In this way, even in the semiconductor device for optical communication, the semiconductor element 405 and the thin metal wire 4
06 does not protrude above the surface of the base 4010, the optical fiber 410 (indicated by a dotted line in FIG. 4) can be fixed close to the semiconductor element 405. Moreover, the optical fiber is made of thin metal wire 40.
6 can be completely prevented from coming into contact with the stem base 401, and the thin metal wire 406 may be electrically short-circuited with the stem base 401, or the thin metal wire 40
It is possible to provide a highly reliable semiconductor device that does not cause wire breakage.
以上、本発明の二つの実施例につき図面を参照して説明
したが本発明の効果は特許−求範囲に記す全ての半導体
装置に及ぶことは明らかであろう。Although two embodiments of the present invention have been described above with reference to the drawings, it is clear that the effects of the present invention extend to all semiconductor devices described in the scope of patent claims.
第１図は従来の金属キャップ型半導体装置の縦断面図で
あり、第２図は従来の光通信用の樹脂封止製半導体装置
の縦断面図である。
第３図−）は本発明の一実施例を示す半導体装置の縦断
面図であり、第３図伽）は第３図（ａ）の半導体装置の
金属キャップを除いた上面図である。
第４図は本発明の他の実施例を示す光通信用半導体装置
の縦断面図である。
１００．２００，３００，４００・・・・・・金属ステ
ム、１０１゜２０１．３０１，４０１・・・・・・ステ
ムベース、１０２，２０２゜３０２．４０２・・・・・
・貫通孔、１０３，２０３，３０３，４０３・・・・・
・ガラス、１０４，２０４，３０４，４０４・・・・・
・外部導出リード、１０５，２０５，３０５，４０５・
・・・・・半導体素子、１０６，２０６，３０６，４０
６・・・・・・金属細線、１０７゜３０７・・・・・・
金属キャップ、２０７，４０７・・・・・・樹脂、３０
８．４０８・・・・・・凹部、３０９，４０９・・・・
・・細線径路、２０８．４１０・・・・・・光ファイバ
￥７ ｌ 閉
第２閃FIG. 1 is a vertical cross-sectional view of a conventional metal cap type semiconductor device, and FIG. 2 is a vertical cross-sectional view of a conventional resin-sealed semiconductor device for optical communication. 3-) is a longitudinal sectional view of a semiconductor device showing an embodiment of the present invention, and FIG. 3(a) is a top view of the semiconductor device of FIG. 3(a) with the metal cap removed. FIG. 4 is a longitudinal sectional view of a semiconductor device for optical communication showing another embodiment of the present invention. 100.200,300,400...Metal stem, 101°201.301,401...Stem base, 102,202°302.402...
・Through hole, 103, 203, 303, 403...
・Glass, 104, 204, 304, 404...
・External lead-out lead, 105, 205, 305, 405・
...semiconductor element, 106, 206, 306, 40
6...Thin metal wire, 107°307...
Metal cap, 207,407...Resin, 30
8.408... recess, 309,409...
...Thin wire path, 208.410...Optical fiber ￥7 l Closed second flash
Claims (1)
ム上に半導体素子と、この半導体素子を載置する載置基
台、および外部導出端子とを有する半導体装置に於いて
、前記半導体素子と前記外部導出端子とを接続する電気
的媒体が、前記載置基台の表面に設けられた凹部な通過
するように設けられていることを特徴とする半導体装置
。In a semiconductor device having a semiconductor element on a metal stem formed by sealing an external lead lead through glass, a mounting base on which the semiconductor element is placed, and an external lead terminal, the semiconductor element and A semiconductor device characterized in that an electrical medium connecting the external lead-out terminal is provided so as to pass through a recess provided on the surface of the mounting base.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57011372A JPS58128779A (en) | 1982-01-27 | 1982-01-27 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57011372A JPS58128779A (en) | 1982-01-27 | 1982-01-27 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58128779A true JPS58128779A (en) | 1983-08-01 |
Family
ID=11776179
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57011372A Pending JPS58128779A (en) | 1982-01-27 | 1982-01-27 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58128779A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0284351U (en) * | 1988-12-16 | 1990-06-29 | ||
| AT409913B (en) * | 2000-11-27 | 2002-12-27 | Electrovac Metall Glaseinschme | Closure stopper |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4924225U (en) * | 1972-06-01 | 1974-03-01 | ||
| JPS5129793A (en) * | 1974-09-06 | 1976-03-13 | Iwashita Kk | MARUNOKOSETSUDANKINIOKERU SETSUDANKAERIBOSHISOCHI |
| JPS5270783A (en) * | 1975-12-10 | 1977-06-13 | Toshiba Corp | Semiconductor luminescent unit |
| JPS53126268A (en) * | 1977-04-11 | 1978-11-04 | Hitachi Ltd | Semiconductor device |
-
1982
- 1982-01-27 JP JP57011372A patent/JPS58128779A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4924225U (en) * | 1972-06-01 | 1974-03-01 | ||
| JPS5129793A (en) * | 1974-09-06 | 1976-03-13 | Iwashita Kk | MARUNOKOSETSUDANKINIOKERU SETSUDANKAERIBOSHISOCHI |
| JPS5270783A (en) * | 1975-12-10 | 1977-06-13 | Toshiba Corp | Semiconductor luminescent unit |
| JPS53126268A (en) * | 1977-04-11 | 1978-11-04 | Hitachi Ltd | Semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0284351U (en) * | 1988-12-16 | 1990-06-29 | ||
| AT409913B (en) * | 2000-11-27 | 2002-12-27 | Electrovac Metall Glaseinschme | Closure stopper |
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