JPS58127386A - Multistage connected solar battery - Google Patents
Multistage connected solar batteryInfo
- Publication number
- JPS58127386A JPS58127386A JP57009845A JP984582A JPS58127386A JP S58127386 A JPS58127386 A JP S58127386A JP 57009845 A JP57009845 A JP 57009845A JP 984582 A JP984582 A JP 984582A JP S58127386 A JPS58127386 A JP S58127386A
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- layer
- stage
- junction
- constituted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 claims abstract description 30
- 239000004065 semiconductor Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 abstract description 13
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 5
- 238000001228 spectrum Methods 0.000 abstract description 2
- 125000005842 heteroatom Chemical group 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
- 238000005457 optimization Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 28
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000003595 spectral effect Effects 0.000 description 5
- 239000004020 conductor Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 239000000470 constituent Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 101000998146 Homo sapiens Interleukin-17A Proteins 0.000 description 1
- 102100033461 Interleukin-17A Human genes 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 101150023010 smu1 gene Proteins 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
Description
【発明の詳細な説明】 本発明は、多層へテロ接合構造太陽電池に関し。[Detailed description of the invention] The present invention relates to a multilayer heterojunction structure solar cell.
特に各暦学導体材料の禁止帯幅、格子定数の最適化をは
かや、太陽電池の多段接続によ抄充電変換効率を高めた
多段接続太陽電池に関するものである０
従来の太陽電池の多くは、例えば第１ｗＪ（２）Ｋ示す
ようｌｃ、 ８１ 、 ＧａＡｓ５の同一材料から成る
ｐ−ｎ接合構ｆ［ｌて構成されてい友。これらの単一半
導体を用いているＩＩ＃）は、太陽光エネルギーを有効
利用できず、％に半導体の禁止帯幅よ抄紙エネルギーの
光は太陽電池内における光起電力発生に寄与し得す、光
電変換効率はａｉにおいて２２−２ｔ％、Ｇａｐｓにお
いてｎ−ムラが限界である等の欠点があった。In particular, it is concerned with multi-stage connected solar cells that improve charge conversion efficiency by optimizing the forbidden band width and lattice constant of each solar cell conductor material and by connecting solar cells in multiple stages.0 Most conventional solar cells For example, as shown in the first wJ(2)K, a p-n junction structure made of the same materials of lc, 81, and GaAs5 is constructed. II#) using these single semiconductors cannot effectively utilize solar energy, and the paper-making energy light can contribute to the generation of photovoltaic power within the solar cell due to the semiconductor's forbidden band width. There were drawbacks such as the photoelectric conversion efficiency was 22-2 t% in AI, and n-unevenness was the limit in Gaps.
また、第１図（Ｂ）に示すように、太陽光に対するスペ
クトル感度帯域を拡大し、晶効率化をはかる目的で、
Ｇａ０．、ム１．，２ムＢのｐｎ接合コを有する上部太
陽電池３とＧａＡｇ （Ｄ ｐｎ接合ダを有する下部太
陽電池ｊとをＧａ、、ム１０．２ムＳのｐｎ接合から成
るトンネル接合≦を介して接続し九太陽電池も提案され
ている。しかし、この太陽電池においては、上部太陽電
池３および下部太陽電池ｊの各構成材料ｅａｏ、ｓム１
０．２ムＳおよびＧａＡｇの格子定数整合の最適化はは
かられてはいるものの、これら構成材料の禁止帯幅が各
ｋｌ、ぶｓ ｅＶおよびｔ、ｔｎ ｅＶであるため、太
陽光スペクトルの内／、９Ｊ６Ｖよりも低エネルギーの
光は太陽電池内における光起電力発生に寄与し得す、従
って太陽光エネルギーを有効利用できず、光電変換効率
は理論的にも約３θ％、実験上で屯／Ｊ％と低いなどの
欠点があった。In addition, as shown in Figure 1 (B), in order to expand the spectral sensitivity band to sunlight and improve crystal efficiency,
Ga0. , Mu1. The upper solar cell 3 having a pn junction of Ga, 2μB and the lower solar cell j having a pn junction of GaAg (D) are connected through a tunnel junction ≦ consisting of a pn junction of Ga, , 10.2μS. A solar cell has also been proposed. However, in this solar cell, the constituent materials of the upper solar cell 3 and the lower solar cell j are eao and smu1.
Although efforts have been made to optimize the lattice constant matching of 0.2 μmS and GaAg, the forbidden band widths of these constituent materials are kl, μs eV and t, tn eV, so the solar spectrum is Light with energy lower than 9J6V can contribute to the generation of photovoltaic power within the solar cell, so solar energy cannot be used effectively, and the photoelectric conversion efficiency is theoretically about 3θ%, but experimentally There were drawbacks such as a low ton/J%.
本発明は、これらの欠点を除去するためになされたもの
で、その目的は、多層へテロ接合構造太陽電池において
、各暦学導体材料の禁止帯幅および格子定数の最適化を
はか抄、太陽電池を多段接続することにより太陽光に対
するスペクトル感度帯域を拡大させた高効率の多段接続
太陽電池を提供することにある。The present invention has been made to eliminate these drawbacks, and its purpose is to optimize the forbidden band width and lattice constant of each solar conductor material in a multilayer heterojunction solar cell. The object of the present invention is to provide a highly efficient multi-stage connected solar cell whose spectral sensitivity band to sunlight is expanded by connecting cells in multiple stages.
かかる目的を達成する丸めに、本発明では、Ｇｅ単結晶
基板上に混晶半導体Ｇａ、 、Ｉｎ、ム８ （ｙ ＝０
．／ｊ〜Ｏ，ＳＳ ）から成るｐｎ接合によ鰺第コ段目
太陽電池を構成し、混晶半導体Ｇａ、、ムｌｘム８（Ｘ
＝Ｏ，／〜Ｏ，ａ ）から成るｐｎ接合により第７段目
太陽電池を構成し、該第１段目太陽電池と前記館２段目
太陽電池とを前記混晶半導体Ｇａ、、ムｌｘム８による
トンネル接合を介して接続し九ことを特徴とする。To achieve this purpose, the present invention provides mixed crystal semiconductors Ga, In, Mu8 (y = 0) on a Ge single crystal substrate.
．． /j~O,SS) constitutes the third stage solar cell, and the mixed crystal semiconductor Ga,, mulxmu8(X
A seventh stage solar cell is constructed by a pn junction consisting of =O,/~O,a), and the first stage solar cell and the second stage solar cell are connected to the mixed crystal semiconductor Ga, mulx It is characterized in that it is connected via a tunnel junction by a system 8.
本発明の他の形態では、Ｇｏ単結晶基板内あるいは該Ｇ
ｅ単結晶基板上にｐｎ接合を形成して第３段目太陽電池
を構成し、該第３段目太陽電池を、混晶ず導体Ｇａ ＋
−ｙＩｎｙム８ （ｙ ＝ ０．／Ｊ 〜０．ｊ月あ
るいはＧｅによるトンネル接合を介して前記混晶半導体
Ｇａ、−アＩｎｙＡｓから成るｐｎ接合による第２段目
太陽電池と接続し、混晶半導体Ｇａ、−ｚＡｊ！Ａｓ
（ｘ−Ｏ，／〜Ｏ９参）から成るｐｎ接合により第１段
目太陽電池を構成し、該第１段目太陽電池と前記第１段
目太陽電池とを前記混晶半導体Ｇａ、−、ムｊＸＡｓ
Ｋよるトンネル接合を介して接続し丸亀＆を牝徽も１４
、前記第１．第一および第３段太陽電池を直列接続した
ことを特徴とする。In another embodiment of the present invention, within the Go single crystal substrate or the G
e A pn junction is formed on the single crystal substrate to constitute a third stage solar cell, and the third stage solar cell is made of a mixed crystal conductor Ga +
-yInym8 (y = 0./J ~ 0.j) Connected to the second stage solar cell by a pn junction made of the mixed crystal semiconductor Ga and -A InyAs through a tunnel junction made of moon or Ge, and Semiconductor Ga, -zAj!As
A first stage solar cell is constructed by a pn junction consisting of (x-O, /~O9 reference), and the first stage solar cell and the first stage solar cell are connected to the mixed crystal semiconductor Ga, -, MujXAs
Connected via tunnel junction by K, Marugame & 14
, the above-mentioned No. 1. It is characterized in that the first and third stage solar cells are connected in series.
以下に、 Ｗ４ＷＪを参照しながら、実施例を用いて本
発明の詳細な説明するが、かかる実施例は本発明〇ｆＬ
４示に過ぎず１本発明の範囲内で種々の改良や変形があ
抄部ることは勿論である。The present invention will be described in detail below using Examples while referring to W4WJ.
This is merely an illustration, and it goes without saying that various improvements and modifications may be made within the scope of the present invention.
第２図（４）および（四は本発明多段接続太陽電池の−
ｏ＠ＩｉＫおける構成例を示す。ここで、ｎ（ｔたはｐ
）形ａｅ単結晶基板ｌｌ上に混晶半導体Ｇａ、□Ｉｎ、
Ａｓの組成ｙ ＝ ｏ、ｉｓ 〜ｏ、ｓｓから成るｎ（
または電池）−を構成する。ｐ（ｆ九はｎ）形Ｇａ、
−、Ｉｎ。Fig. 2 (4) and (4) - of the multi-stage connected solar cell of the present invention
An example of the configuration in o@IiK is shown. Here, n(t or p
) mixed crystal semiconductors Ga, □In,
The composition of As is n(
or batteries). p (f9 is n) form Ga,
-, In.
（ｉたはｎ＋ ）層ｉｓおよびｎ＋ （ｔたはＰ” ）
層／４の各々膜厚１０００ Ｘ以下の薄層のトンネル接
合／７を形成して第１段目太陽電池／Ｉと第一段目太陽
電池／ヂとを接続する。第１段目太陽電池／Ｉは、混晶
半導体Ｇａ、−ｘＡｊ、ムＳの組成ｘ ＝ ０．Ｉ Ｎ
ｏ、１から成るｎ（ｔたはｐ）層１９およびｐ（１九は
ｎ）層Ｘをヘテロエピタキシャル成長させて形′威し九
ｐｎ接合から成る太陽電池で構成する。(i or n+) layer is and n+ (t or P'')
A thin tunnel junction /7 having a film thickness of 1000× or less in each layer /4 is formed to connect the first stage solar cell /I and the first stage solar cell /D. The first stage solar cell/I has a composition of mixed crystal semiconductors Ga, -xAj, and S, x = 0. IN
An n (t or p) layer 19 consisting of o, 1 and a p (t or p) layer X are grown heteroepitaxially to form a solar cell consisting of a pn junction.
ｐ（ｔたＦｉｎ）形Ｇａ、−、ム１ｘＡＢＷＩコＯにお
ける表面再結合の影響を低減する必要のある場合には、
第λ図山）に示すように、ｐ（まえはｎ）形Ｇａ、−ｘ
ＡｌＸｋｔｓ層コＯの表面にｐｉｆたはｎ）形Ｇａ、−
、ム１ｘムＢの組成ｘ ：＝ ０，４〜０．９から成る
室材料層コｌをヘテロエピタキシャル成長させれば良い
。When it is necessary to reduce the effect of surface recombination in p(tFin) type Ga, -, mu1xABWI coO,
As shown in Fig.
pif or n) type Ga, - on the surface of the AlXkts layer
, M1xMB composition x:=0.4 to 0.9 may be grown by heteroepitaxial growth.
上述のへテロエピタキシャル成長は分子線エピタキシャ
ル法で実施できるが、他に気相エピタキシャル法、液相
エピタキシャル法でも実施で亀る。The above-mentioned heteroepitaxial growth can be carried out by molecular beam epitaxial method, but it can also be carried out by vapor phase epitaxial method or liquid phase epitaxial method.
更に１第一図（１）、ＯＢ）の実施例において１表面層
電極として格子状電極ｎを層ｚｌ九はＩ上に形成し、結
晶基板／／の裏面に電極ｎを形成することＫより、Ｇａ
、−、ムｌ□ムＳの第１段目太陽電池／ＩとＧａ、−ア
Ｉｎ、Ａｓの第１段目太陽電池／ｌとをトンネル接合７
７により接続し九多段接続太陽電池が得られる。Furthermore, in the embodiment shown in Figure 1 (1), OB), a lattice electrode n is formed as a surface layer electrode on the layer I, and an electrode n is formed on the back surface of the crystal substrate. , Ga
The first stage solar cell/I of , -, Mu S and the first stage solar cell/l of Ga, -A, In, and As are connected by tunnel junction 7.
7 to obtain nine multi-stage connected solar cells.
本実施例の多段接続太陽電池においては、第２段目太陽
電池ｌ−よび第１段目太陽電池／ヂをそれぞれ構成する
混晶半導体材料Ｇａ、−、ムｊＸＡｓおよびＧａ、−ｙ
Ｉ！ｌｙＡ＆Ｄ禁止帯幅が各ｋ ／、ｒ 〜／、９ ｅ
Ｖおよび０．１１〜八コｊ ｅＶであり、入射太陽光コ
ゲに対するスペクトル感度帯域の拡大がはかられてお９
、理想的な太陽電池材料の禁止帯幅の組合せ／、６コｅ
Ｖ１０、デｊ ｅＶを包含し、光電変換効率はｙ〜ｖ％
に達する。を九、本発明多段接続太陽電池を構成するＧ
ａ、、ムｌＸムｓ 、 Ｇａ、−、Ｉｎ、ＡｓおよびＧ
ｅ単結晶基板の格子定数の整合も良い。In the multi-stage connected solar cell of this example, the mixed crystal semiconductor materials Ga, -, MujXAs and Ga, -y that constitute the second stage solar cell l- and the first stage solar cell /, respectively
I! lyA&D forbidden band width is each k/, r ~/, 9 e
V and 0.11 to 8 koj eV, and the spectral sensitivity band for incident solar burns has been expanded.
, ideal combination of forbidden band widths of solar cell materials/, 6 pieces
V10, including dej eV, photoelectric conversion efficiency is y~v%
reach. 9. G constituting the multi-stage connected solar cell of the present invention
a,,MuXmus,Ga,-,In,As and G
eThe lattice constant of the single crystal substrate is well matched.
さらに、Ｇｏ単結晶上にＧａ、−ｙＩｎｙＡＢを組成ｙ
をＯから徐★に増加させながら傾斜成長させて第一段目
太陽電池／＃を形成することもできるから、Ｇａ、−ア
Ｉｎアム８層内へのンスフィット転位の発生を抑制でき
、第１段目太陽電滝／ｌ内のキャリア収集効率低下を抑
制でき、高効率化を達成できる。このようなＧａ、−ア
Ｉｎ ｙム８の傾斜組成層はこの層内に内蔵電界を誘起
せしめ、さらにキャリアの収集効率を高めることができ
るなどの利点本省する。Furthermore, on the Go single crystal, Ga, -yInyAB is added to the composition y
It is also possible to form the first stage solar cell /# by gradually increasing from O to ★ to form the first stage solar cell /#, so it is possible to suppress the occurrence of Sfit dislocations in the Ga, -Ar 8 layer, and to It is possible to suppress a decrease in carrier collection efficiency within the first stage solar electric waterfall/l and achieve high efficiency. Such a graded composition layer of Ga, -In ym 8 has advantages such as inducing a built-in electric field in this layer and further increasing the carrier collection efficiency.
第３図■および（２）は本発明多段接続太陽電池の他の
形態における構成例を示す。ここで、ｎ（ｔたはｐ）形
Ｇｅ単結晶基板／／へ熱拡散、イオン注入岬によりｐ（
またはｎ）形Ｇｅ層コｊを形成する。FIGS. 3 (2) and (2) show examples of other configurations of the multi-stage connected solar cell of the present invention. Here, p(
or n) forming a type Ge layer;
あるいは第３図（８）に示すようにエピタキシャル威長
郷によりｎ（まえはｐ）形Ｇｏ Ｍコ４を形成し先後に
ｐ（またはｎ）形Ｇｏ Ｉｌｌを形成する。それにより
Ｇｅのｐｎ １合による第３段目太陽電池１を加したｐ
＋ ＜またはｎ＋ ）層１およびｎ” （まえはｐ＋
＞層Ｚの各々膜厚ｔｏｏｏ ｌ以下の薄層のトンネル接
合Ｘを形成し、このトンネル接合Ｘを介して第１段目太
陽電地／ｌと第３段目太陽電池１壇九は１′とを接続す
る。次いで、先の実施例の場合と同様に、第２段目太陽
電池ｌ−を構成するｎ（ま九はｐ）形Ｇａ、−、Ｉｎ、
ＡＳ層／コおよびｐ（を九はｎ）形Ｇａ、−。Alternatively, as shown in FIG. 3(8), an n (previously p) type Go M is formed by epitaxial process, and a p (or n) type Go Ill is formed afterwards. Therefore, the third stage solar cell 1 due to the pn 1 combination of Ge is added
+ < or n+ ) layer 1 and n” (before p+
>For each layer Z, a thin tunnel junction X is formed with a film thickness of too l or less, and through this tunnel junction Connect with. Next, as in the case of the previous embodiment, the n-type (p) type Ga, -, In, which constitutes the second stage solar cell l-,
AS layer/co and p (9 is n) type Ga, -.
Ｉｎ ｙＡｓ Ｎ ／Ｊ、トンネル接合ｎを形成するＩ
）（ｔたはｎ十３ Ｗ Ｇ’＋−ｘムｌｘム８層／ｊ
（ｘ ＝ ０．／ −０，参）およびｎ” （ｔ 九は
ｐ” ）形Ｇａ、−ｘＡＩＸム８層ｌ嶋および第２段目
太陽電池ｌ−を構成するｎ（またはｐ）％Ｇａ、−、ム
リムＢ Ｉｌｌ ／９およびｐ（またはｎ）形Ｇａ、−
ｘムノ、ム１層Ｊ７．更Ｋｍ）（１＊はｎ）形Ｇａ 、
−ｘＡ７．ム８による窓材料１をこの順序でへテロエ
ピタキシャル成長させる。次いで、表面層電極ｎを室材
料層Ｉ上に形成し、車両電極ｎを基板／／に形成するこ
とＫより、３個の太陽電池を直列接続した多段接続太陽
電池が構成される。本実施例の多段接続太陽電池におい
ては、各段の太陽電池を構成する半導体材料Ｇａ、−、
ム１Ｘムｇ、Ｇａ、−，工ｎ、ＡｓおよびＧｅの禁止帯
幅が各々／、ｊ Ｎ／、９ ｅＶ 、 ０．１３〜へＪ
ｊ ｅＶおよびｏ、４６ ｅＶであ抄、入射太陽光３に
対するスペクトル感度帯域の拡大がさらにはかられてお
り、第１図（１）、（３）に示し九コ段接続太陽電池の
光電変換効率よ抄さらにｊ％程度の向上が可能となる。In yAs N /J, I forming the tunnel junction n
)(t or n13 W G'+-xmlxmu8 layers/j
(x = 0./-0, see) and n" (t9 is p") type Ga, -xAIX 8-layer layer and n (or p)% Ga constituting the second stage solar cell l-. , -, Murim B Ill /9 and p (or n) type Ga, -
x muno, mu1 layer J7. further Km) (1* is n) type Ga,
-xA7. The window material 1 is grown heteroepitaxially using the film 8 in this order. Next, a surface layer electrode n is formed on the chamber material layer I, and a vehicle electrode n is formed on the substrate //, thereby forming a multi-stage connected solar cell in which three solar cells are connected in series. In the multi-stage connected solar cell of this example, the semiconductor materials constituting each stage of solar cells are Ga, -,
The forbidden band widths of M1X, Ga, -, n, As and Ge are respectively /,j N/,9 eV, 0.13 to J
eV and o, 46 eV, the spectral sensitivity band for incident sunlight 3 has been further expanded, and the photoelectric conversion of the nine-stage connected solar cell shown in Figure 1 (1) and (3). It is possible to further improve paper efficiency by about J%.
以上説明し丸ように１本発明の多段接続太陽電池は、各
段太陽電池を構成する半導体材料の禁止帯幅、格子定数
の最適化がなされ、各段太陽電池を多段接続することに
より太陽光に対するスペクトル感度帯域が拡大されてい
るので、従来の太陽電池に比べて高効率であるなどの利
点を有する。As explained above, the multi-stage connected solar cell of the present invention is achieved by optimizing the bandgap and lattice constant of the semiconductor material constituting each stage solar cell, and by connecting each stage solar cell in multiple stages, Since the spectral sensitivity band for solar cells has been expanded, it has advantages such as higher efficiency than conventional solar cells.
第１図（１）およびｔＢ）は従来の太陽電池の構成例を
示す断面図、第２図（１）および（８）は本発明の一実
施の態様における多段接続太陽電池の構成例を示す断面
図、第３図（４）および色）Ｆｉ本発明の他の実施の態
様における多段接続太陽電池の構成例を示す断面図であ
る。
／・ホモｐ−ｎ接合、 コ・Ｇａ、、ム１０．２ムｇ
ｐｎ接合、３・・・上部太陽電池、 参・・・Ｇａ
Ａｓ ｐｎ接合。
ｊ・・・下部太陽電池、
≦・・・ＧａＯ，Ｉム！０．２ムＢトンネル接合、／／
・・・ｎ （ｐ）形Ｇｅ単結晶基板、／２−ｎ（ｐ）形
Ｇａ、−、Ｉｎ、Ａｓ層、−／Ｊ−ｐ（ｎ）形Ｇａ １
−ｙ Ｉ ｎ ｙム竺層、／＃−・・第２段目太陽電池
、ｌｊ・・・ｐ＋（ｎ＋）形Ｇ〜−ｘｕ ｘＡｓ層、ｌ
≦・ｎ （ｐ）形Ｇａ、−１Ａｊ、ムＩＬ１７・・・ト
ンネル接合、１１・・・第１段目太陽電池、／９−ｎｔ
ｐ）形Ｇａ、−、ム１ＸＡＢ層、Ｊ −＝ ｐ （ｎ）
形Ｇａ、−ｘＡｊＸＡｓ層。
Ｉ・・・ｐｆｎ）形Ｇａ、 −ｘＡ４ＸＡｓ ＩＦ材料
層、ｎ・・・表面層電極、 ｎ・・・裏面電極、Ｊ
・・・太陽光、 Ｂ・・・ｐ（ｎ）形Ｇｅ層
。
ム・・・ｎ （ｐ）形Ｇｅ層、ｎ、ｎ’・・・第３段目
太陽電池。
コ・・・ｐ＋ （ｎ＋）形半導体層、？・・・ｒｉ”（
ｐ”）形半導体層、〃・・・トンネル接合。
特許出願人 日本電信電話公社
ｂ
区
！−一
呼Fig. 1 (1) and tB) are cross-sectional views showing an example of the configuration of a conventional solar cell, and Figs. 2 (1) and (8) show an example of the structure of a multi-stage connected solar cell in an embodiment of the present invention. Cross-sectional view, Figure 3 (4) and color) Fi is a cross-sectional view showing a configuration example of a multi-stage connection solar cell in another embodiment of the present invention. /・Homo p-n junction, Co・Ga,,mu10.2mg
pn junction, 3...upper solar cell, 3...Ga
As pn junction. j...lower solar cell, ≦...GaO, Im! 0.2μB tunnel junction, //
...n(p) type Ge single crystal substrate, /2-n(p) type Ga, -, In, As layer, -/J-p(n) type Ga 1
-y I n y vertical layer, /#-...2nd stage solar cell, lj...p+(n+) type G~-xu xAs layer, l
≦・n (p) type Ga, -1Aj, mu IL17... tunnel junction, 11... first stage solar cell, /9-nt
p) type Ga, -, mu 1XAB layer, J - = p (n)
Form Ga, -xAjXAs layer. I...pfn) type Ga, -xA4XAs IF material layer, n...surface layer electrode, n...back surface electrode, J
...Sunlight, B...p(n) type Ge layer. M...n(p) type Ge layer, n, n'...3rd stage solar cell. Co...p+ (n+) type semiconductor layer, ? ...ri” (
p”) type semiconductor layer, 〃...tunnel junction. Patent applicant Nippon Telegraph and Telephone Public Corporation b Ward!-Ichiko
Claims (1)
Ｓ（７＝ ａ、／Ｉ −０，ＩＪ ）から威るｐｎｌ！
合により第２段目太陽電池を構威し、混晶半導体Ｇ＆１
−ｘムリムｓ （ｘ ＝ ０．１−ＯＪ ）から成るｐ
ｎ接合により第１段目太陽電池を構成し、該第１段目太
陽電池と前記第一段目太陽電池とを前記混晶半導体Ｇａ
、、ｌｌｘｋｍ Ｋよるトンネル接合を介して接続した
ことを特徴とする多段接続太陽電池。 ２） Ｇｏ単結晶基板内あるいは該Ｇ５１単結晶基板
上Ｋｐｎ接合を形成して第１段目太陽電池を構成−験第
３段目太陽電池を、混晶半導体Ｇａ、−７Ｉｎ、Ａｓ
（ｙ ＝ ｏ、ｔｚ 〜ｏ、ｓｓ ）あるいはＧｅＫよ
るトンネル接合を介して前記混晶半導体Ｇａ、−ｙＩｎ
アム−から威るｐｎ接會による第２段目太陽電池と接続
し、混晶半導体Ｇａ、−□ムｌ□ムＢ（ｘ＝０．／〜０
．＃）から成るｐｎ接合によ抄第１段目太陽電池を構成
し、該第１段目太陽電池と前記第２段目太陽電池とを前
記混晶半導体Ｇ＆ １ 、ｕｘムＢによるトンネル接合
を介して接続し丸へ＆ｔ％甑８を鳳前記第１．第コおよ
び第３段目太陽電池を直列接続し九ことを特徴とする多
段接続太陽電池。[Claims] 1) pnl! formed from a mixed crystal semiconductor Ga, -7In AmS (7= a, /I -0, IJ ) on a Go single crystal substrate.
Depending on the combination, a second stage solar cell is constructed, and the mixed crystal semiconductor G&1
p consisting of -x Murims (x = 0.1-OJ)
A first-stage solar cell is configured by an n-junction, and the first-stage solar cell and the first-stage solar cell are connected to the mixed crystal semiconductor Ga.
A multi-stage connected solar cell characterized in that the solar cell is connected through a tunnel junction using K.,,llxkm K. 2) Forming a Kpn junction in the Go single crystal substrate or on the G51 single crystal substrate to construct the first stage solar cell;
(y = o, tz ~ o, ss) or the mixed crystal semiconductor Ga, -yIn via a tunnel junction made of GeK.
It is connected to the second stage solar cell by pn connection from am to mixed crystal semiconductor Ga, -
．． A first-stage solar cell is formed by a pn junction consisting of #), and a tunnel junction is formed between the first-stage solar cell and the second-stage solar cell by the mixed crystal semiconductor G & 1 and ux M B. Connect through the circle &t% koshiki 8 to the above-mentioned 1st. A multi-stage connected solar cell characterized in that nine first and third stage solar cells are connected in series.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57009845A JPS58127386A (en) | 1982-01-25 | 1982-01-25 | Multistage connected solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57009845A JPS58127386A (en) | 1982-01-25 | 1982-01-25 | Multistage connected solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58127386A true JPS58127386A (en) | 1983-07-29 |
Family
ID=11731459
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57009845A Pending JPS58127386A (en) | 1982-01-25 | 1982-01-25 | Multistage connected solar battery |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58127386A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5009719A (en) * | 1989-02-17 | 1991-04-23 | Mitsubishi Denki Kabushiki Kaisha | Tandem solar cell |
| US6300558B1 (en) * | 1999-04-27 | 2001-10-09 | Japan Energy Corporation | Lattice matched solar cell and method for manufacturing the same |
-
1982
- 1982-01-25 JP JP57009845A patent/JPS58127386A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5009719A (en) * | 1989-02-17 | 1991-04-23 | Mitsubishi Denki Kabushiki Kaisha | Tandem solar cell |
| US6300558B1 (en) * | 1999-04-27 | 2001-10-09 | Japan Energy Corporation | Lattice matched solar cell and method for manufacturing the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7217882B2 (en) | Broad spectrum solar cell | |
| US5223043A (en) | Current-matched high-efficiency, multijunction monolithic solar cells | |
| Yamaguchi et al. | Effect of dislocations on the efficiency of thin‐film GaAs solar cells on Si substrates | |
| Takamoto et al. | Over 30% efficient InGaP/GaAs tandem solar cells | |
| Olson et al. | A 27.3% efficient Ga0. 5In0. 5P/GaAs tandem solar cell | |
| US9231135B2 (en) | Low-bandgap, monolithic, multi-bandgap, optoelectronic devices | |
| JP4064592B2 (en) | Photoelectric conversion device | |
| US5316593A (en) | Heterojunction solar cell with passivated emitter surface | |
| CA1222043A (en) | Solar cells and photodetectors | |
| Yamaguchi | Multi-junction solar cells and novel structures for solar cell applications | |
| CN103915522A (en) | Multijunction solar cell with low band gap absorbing layer in the middle cell and method of fabricating same | |
| US20040261837A1 (en) | Multi-junction solar cell device | |
| US20050081910A1 (en) | High efficiency tandem solar cells on silicon substrates using ultra thin germanium buffer layers | |
| US20140090700A1 (en) | High-concentration multi-junction solar cell and method for fabricating same | |
| USH667H (en) | Patterned tunnel junction | |
| CN101478014A (en) | Light splitting manufacturing process for five-junction solar cell system | |
| JP2722761B2 (en) | GaAs solar cell | |
| CN105576068A (en) | Double-face-growing InP five-junction solar battery | |
| JPH0661513A (en) | Laminated solar battery | |
| CN103000740A (en) | GaAs/GaInP double knot solar battery and manufacturing method thereof | |
| JPS58127386A (en) | Multistage connected solar battery | |
| CN103247722B (en) | The manufacture method of four knot cascade solar cells | |
| CN111430493B (en) | Multi-junction solar cell and power supply equipment | |
| CN111276560B (en) | Gallium arsenide solar cell and manufacturing method thereof | |
| JPS58127387A (en) | High efficiency solar battery |