JPS58127379A - 絶縁ゲ−ト形トランジスタ - Google Patents

絶縁ゲ−ト形トランジスタ

Info

Publication number
JPS58127379A
JPS58127379A JP57009746A JP974682A JPS58127379A JP S58127379 A JPS58127379 A JP S58127379A JP 57009746 A JP57009746 A JP 57009746A JP 974682 A JP974682 A JP 974682A JP S58127379 A JPS58127379 A JP S58127379A
Authority
JP
Japan
Prior art keywords
active layer
cathode
gate
anode
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57009746A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0475669B2 (enExample
Inventor
Yasuhisa Omura
泰久 大村
Katsutoshi Izumi
泉　勝俊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP57009746A priority Critical patent/JPS58127379A/ja
Publication of JPS58127379A publication Critical patent/JPS58127379A/ja
Publication of JPH0475669B2 publication Critical patent/JPH0475669B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP57009746A 1982-01-25 1982-01-25 絶縁ゲ−ト形トランジスタ Granted JPS58127379A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57009746A JPS58127379A (ja) 1982-01-25 1982-01-25 絶縁ゲ−ト形トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57009746A JPS58127379A (ja) 1982-01-25 1982-01-25 絶縁ゲ−ト形トランジスタ

Publications (2)

Publication Number Publication Date
JPS58127379A true JPS58127379A (ja) 1983-07-29
JPH0475669B2 JPH0475669B2 (enExample) 1992-12-01

Family

ID=11728865

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57009746A Granted JPS58127379A (ja) 1982-01-25 1982-01-25 絶縁ゲ−ト形トランジスタ

Country Status (1)

Country Link
JP (1) JPS58127379A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02278771A (ja) * 1989-04-20 1990-11-15 Matsushita Electron Corp 薄膜トランジスタ
US5442215A (en) * 1993-03-31 1995-08-15 Goldstar Co., Ltd. Thin film transistor having an asymmetrical lightly doped drain structure
US5477065A (en) * 1990-07-02 1995-12-19 Kabushiki Kaisha Toshiba Lateral thin film thyristor with bevel

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02278771A (ja) * 1989-04-20 1990-11-15 Matsushita Electron Corp 薄膜トランジスタ
US5477065A (en) * 1990-07-02 1995-12-19 Kabushiki Kaisha Toshiba Lateral thin film thyristor with bevel
US5442215A (en) * 1993-03-31 1995-08-15 Goldstar Co., Ltd. Thin film transistor having an asymmetrical lightly doped drain structure

Also Published As

Publication number Publication date
JPH0475669B2 (enExample) 1992-12-01

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