JPS58125978A - Driving method of charge transfer image pickup device - Google Patents
Driving method of charge transfer image pickup deviceInfo
- Publication number
- JPS58125978A JPS58125978A JP57008451A JP845182A JPS58125978A JP S58125978 A JPS58125978 A JP S58125978A JP 57008451 A JP57008451 A JP 57008451A JP 845182 A JP845182 A JP 845182A JP S58125978 A JPS58125978 A JP S58125978A
- Authority
- JP
- Japan
- Prior art keywords
- shift register
- charge
- horizontal
- transfer
- register
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000012546 transfer Methods 0.000 title claims abstract description 66
- 238000000034 method Methods 0.000 title claims description 21
- 238000003384 imaging method Methods 0.000 claims description 14
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 230000008878 coupling Effects 0.000 claims description 7
- 238000010168 coupling process Methods 0.000 claims description 7
- 238000005859 coupling reaction Methods 0.000 claims description 7
- 238000001514 detection method Methods 0.000 claims description 5
- 241000270666 Testudines Species 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 238000002791 soaking Methods 0.000 claims 1
- 235000021419 vinegar Nutrition 0.000 claims 1
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- 230000000694 effects Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 241000132007 Bahia Species 0.000 description 1
- 229930194845 Bahia Natural products 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- 208000006558 Dental Calculus Diseases 0.000 description 1
- 235000017858 Laurus nobilis Nutrition 0.000 description 1
- 241000406668 Loxodonta cyclotis Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 235000012149 noodles Nutrition 0.000 description 1
- 239000010802 sludge Substances 0.000 description 1
- 210000001215 vagina Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は電信転送装置を用いた固体撮像装置に関するも
のである。固体撮像装置は、小m軽董、低16費1,力
、^信頼性を特徴とし、しかも撮像管におけるような焼
き付きの必配らないため、近ヰ、多方面にわたって研研
開発がなされている。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a solid-state imaging device using a telegraph transfer device. Solid-state imaging devices are characterized by their small size, low cost, power, and reliability, and because they do not suffer from burn-in unlike image pickup tubes, they have recently been researched and developed in many fields. .
第1図はh yl5した電信転送撮像装置のうち、イン
ターライン転送方式と呼ばれるものの概略区であり、複
数列の電萄転送鉄憤から成る垂直シフトレジスタ群lO
と、各垂直シフトレンスタの片側に隣接して配置された
光電変換素子群l1と、各垂直シフトレジスタの一端に
電気的に結合した水平シフトレンスタl2と,水平シフ
トレジスタl2の一端に設けられた電荷検出部13から
構成されている。Figure 1 schematically shows the so-called interline transfer method among telegraph transfer imaging devices using hyl5, and a vertical shift register group consisting of multiple rows of telegraph transfer devices.
, a photoelectric conversion element group l1 arranged adjacent to one side of each vertical shift register, a horizontal shift register l2 electrically coupled to one end of each vertical shift register, and a charge detection device provided at one end of the horizontal shift register l2. It consists of a section 13.
第2図は第l図に不す電荷転送撮俸装箇のうち垂直シフ
トレジスタ群lOと水平シフトレジスタl2との結合領
域14の拡大図であり、垂直シフトレンスタ10のチャ
ネル領域20は垂直電荷転送電極21.22と、垂直シ
フトレジスタlOから水平シフトレジスタ12への信号
電荷の転送を制御する垂直トランス7アグート電極23
で被われている。また水平シフトレンスタ12のチャネ
ル領域24は水平電荷転送電極25,26.27゜28
.29で普われでいる。さらに同図において、チャネル
領域20の末端の領域30を水平1mm転送機27の一
部で被うことKより、垂直シフトレンスタlOと水平シ
フトレジスタ12が電気的に結合されてい仝。FIG. 2 is an enlarged view of the coupling region 14 between the vertical shift register group lO and the horizontal shift register l2 among the charge transfer imaging equipment not shown in FIG. electrodes 21 , 22 and the vertical transformer 7 agate electrode 23 that controls the transfer of signal charges from the vertical shift register lO to the horizontal shift register 12
covered with Further, the channel region 24 of the horizontal shift lens 12 is connected to the horizontal charge transfer electrodes 25, 26, 27° 28
.. It's popular at 29. Further, in the figure, the vertical shift register 10 and the horizontal shift register 12 are electrically coupled by covering the end region 30 of the channel region 20 with a part of the horizontal 1 mm transfer device 27.
93図は第2図に示す結合領域のト」縁上の断面を模式
的に示したものである。半導体基板31の主面には絶縁
層32を介して上述した垂直電荷転送電極21,22.
垂直トランスファゲート電$23.水平電荷転送%橡2
7が形成されている。うた上記の各電極下には、例えば
基板半導体とは反対の導電製をもつ埋込みチャネル層3
3が形成され、またチャネル領域の外部には例えば埋込
杓チャ洋ル層33の不純物と反対の導電製不純物をドー
ピングしたチャネルストップ領域34が形成されている
。また半導体の主面は例えば金属層35で光遮蔽されて
いる。同図において′44域36は垂直シフトレジスタ
と水平シフトレンスタを電気的に結合している第2図の
領域30を示し、またill域37は水平シフトレンス
タのチャネル領域を示している。FIG. 93 schematically shows a cross section on the edge of the joint region shown in FIG. 2. The above-mentioned vertical charge transfer electrodes 21, 22 .
Vertical transfer gate voltage $23. Horizontal charge transfer%2
7 is formed. Under each of the above electrodes, there is a buried channel layer 3 having a conductivity opposite to that of the substrate semiconductor, for example.
3 is formed, and a channel stop region 34 doped with, for example, a conductive impurity opposite to the impurity of the buried channel layer 33 is formed outside the channel region. Further, the main surface of the semiconductor is shielded from light by, for example, a metal layer 35. In the figure, a '44 area 36 indicates the area 30 of FIG. 2 which electrically couples the vertical shift register and the horizontal shift register, and an ill area 37 indicates the channel area of the horizontal shift register.
かかる構造の′に荷転送撮像装置の製作は、第1図にお
いて光電変換素子群11に入射光量に応じて蓄積された
信号電荷か映倫信号のフレーム周動、あるいはフィール
ド周動ごとに対広する!l龜シフトレジスタ群lOへ読
み出されたのち、映像信号の水平走査周期(IH)ごと
に前記垂直シフトレンスタ群lO内を並列に下方向KF
@次転送される。In order to manufacture a charge transfer imaging device having such a structure, as shown in FIG. ! After being read into the vertical shift register group lO, the downward KF is read out in parallel within the vertical shift register group lO every horizontal scanning period (IH) of the video signal.
@Next forwarded.
垂直シフトレジスタ群10の末端まで転送された信号電
荷は、垂直トランスファゲート電極23がオン状態とな
る水平走査周期(IH)ととに水平シフトレジスタ12
へ並列に注入される。水平シフトレジスタ12へ送られ
た信号電鉤は、次の周期で垂直シフトレジスタ群10か
ら信号電荷が転送されてくる間に、水平方向に順次転送
され、電荷検出部13から映像信号として外部へ取り出
される。The signal charge transferred to the end of the vertical shift register group 10 is transferred to the horizontal shift register 12 in the horizontal scanning period (IH) in which the vertical transfer gate electrode 23 is turned on.
are injected in parallel. The signal electric hook sent to the horizontal shift register 12 is sequentially transferred in the horizontal direction while signal charges are transferred from the vertical shift register group 10 in the next cycle, and is output from the charge detection unit 13 to the outside as a video signal. taken out.
この様な従来の電萄転送撮像装皺では、^輝度普写体を
装置した場合に、映像が横方向へ流れたり、あるいはテ
レヒ画面右伺の再生m*だけがぼけたりする、撮饋動作
上好ましくない現象が見受けられた。この現獣は前記電
菌転迭撮像装置を単板カラーカメラに応用し九場合など
、色ずれ、あるいは色のシェーデングの原因ともなって
いた。With such conventional digital transfer imaging equipment, when a luminance normal object is used, the image may flow horizontally, or only the reproduction m* on the right side of the TV screen may be blurred. An unfavorable phenomenon was observed. This phenomenon has been the cause of color shift or color shading when the electromagnetic transfer imaging device is applied to a single-chip color camera.
前記現象線第2図あるいは第3図に示す垂直シフトレジ
スタと水平シフトレジスタの結合領域の構造に起因する
ものである。縞4図(a) 、 (b) 、 (c)は
前記現象を説明するために第3図に示す結合wA域の断
面図の各部分に8ける電位分布を模式的に示したもので
、垂1ift電繭転送電撫21,22と水平電輪転送電
極27がオン状態で、垂直トランス7アグート亀勧23
がオフ状態となる時点の一位分布が、水平シフトレジス
タ12での転送電薗量が少ない順に示されている。また
第5図は水平シフトレンスタ12での転送電荷量と非転
送効率との関係を示す実測結果であり、測定には第2図
rc示す領域30のチャネル幅Wマが8μm、水平シフ
トレジスタ12のチャネル領域24の411 W Mが
30μmである電荷転送撮像装置が用いられている。This phenomenon is caused by the structure of the coupling region of the vertical shift register and horizontal shift register shown in FIG. 2 or 3. 4 (a), (b), and (c) schematically show the potential distribution in each part of the cross-sectional view of the bond wA region shown in FIG. 3 in order to explain the above phenomenon. When vertical 1ift electric cocoon transfer electrodes 21 and 22 and horizontal electric ring transfer electrode 27 are on, vertical transformer 7 agutotokikan 23
The first-place distribution at the time when the horizontal shift register 12 is turned off is shown in descending order of the amount of transfer power in the horizontal shift register 12. Further, FIG. 5 shows the actual measurement results showing the relationship between the amount of transferred charge and the non-transfer efficiency in the horizontal shift register 12. The measurement was carried out when the channel width W of the region 30 shown in FIG. A charge transfer imaging device is used in which the channel region 24 has a 411 W M of 30 μm.
以後、第2図、第3図、第4図及び第5図を用いて前記
現象を説明する。Hereinafter, the above phenomenon will be explained using FIGS. 2, 3, 4, and 5.
ます、第2図に示す領域30のチャネル幅Wvは水平シ
フトレンスタのチャネル領域24のチャネル幅WMに比
べて小さいため、第4図(ml 、 (b) 。First, since the channel width Wv of the region 30 shown in FIG. 2 is smaller than the channel width WM of the channel region 24 of the horizontal shift lens, the channel width Wv of the region 30 shown in FIG.
(c)における領域36のチャネル電位φvL、狭チャ
ネル勿果により、領域37のチャネル電位φ□よりも小
さくなる。このため、第4図(1)に示すように、水平
シフトレンスタのチャネル領域37t−上記2つのチャ
ネル電位差φ、−φ7よりも小さなレベルの信号電荷が
転送される場合には、信号電菌社軸域36には入いり込
まず、効率の良い転送が行なわれる。ところが、同図(
b)に示すように、転送される信号電荷のレベルが上記
電位差φヨーφ9を越える程大きくなると、上記信号電
荷の一部は領域36へ入いり込み、水平シフトレンスタ
の転送効率を著しく劣化させる。これが前述した^輝度
被写体操体膣の映像の横方向への流れや、テレビ画面右
側の再ヰ画像のぼけの原因となっている。The channel potential φvL of the region 36 in (c) becomes smaller than the channel potential φ□ of the region 37 due to the narrow channel effect. Therefore, as shown in FIG. 4 (1), when a signal charge of a level smaller than the channel region 37t of the horizontal shift lens star - the above two channel potential differences φ, -φ7 is transferred, 36, and efficient transfer is performed. However, the same figure (
As shown in b), when the level of the signal charge to be transferred becomes so large as to exceed the potential difference φyaw φ9, a portion of the signal charge enters the region 36, significantly deteriorating the transfer efficiency of the horizontal shift lens. This is the cause of the horizontal movement of the image of the subject's vagina, which is a luminance subject, and the blurring of the replay image on the right side of the TV screen, as mentioned above.
よって、これら現象tj!けるためには、し/ズの紋り
などで入射光′1kを1!II IIブることにより、
光電変換される最大信号電荷のレベルを、第4図(1)
のごとく、チャネル電位差φヨーφ9よりも小さく限定
する必要がある。しかしながら、第5図の実りIJ結果
によれば、前述した転送効率が良い範囲は、同図の範1
!iIK示すごとく、転送電繭量で約0.005pC,
出力信号電圧に換算して約200mVの狭い範囲に限定
され、十分なダイナミックレンジを得ることはできない
。これは取りも直さず、電荷転送撮像装置全体の信号対
雑音比を大きく取れない原因ともなっている。次に、水
平シフトレジスタ中を第4図(blにボすよりも更に大
きなレベルの信号電画が転送される場合、すなわち第4
図(c)の場合の転送効率は、バイアス電荷の効果rC
より@4図(b)の場合よりも改善される。このバイア
スvlL傭による転送効率改善効果は、第5図の実6g
ll16果の範囲■にも明確に示されている。しかしな
がら、第1図に示す従来の電荷転送撮像装置では、光電
変換された信号電荷は零のレベルから映像情報を持って
いるため、第5図に不すよ5なバイアス電荷による転送
効率改善効果は期待できない。Therefore, these phenomena tj! In order to reduce the incident light '1k to 1! By II II,
The maximum signal charge level to be photoelectrically converted is shown in Figure 4 (1).
As shown in the figure, it is necessary to limit the channel potential difference φyaw to be smaller than φ9. However, according to the fruitful IJ results in Figure 5, the range with good transfer efficiency as described above is within range 1 in the figure.
! As shown in iIK, the amount of transferred electrococoon is about 0.005 pC,
The output signal voltage is limited to a narrow range of about 200 mV, and a sufficient dynamic range cannot be obtained. This problem cannot be corrected and becomes a cause of not being able to obtain a high signal-to-noise ratio for the entire charge transfer imaging device. Next, when a signal electric image of a higher level than the one shown in FIG. 4 (b1) is transferred in the horizontal shift register,
The transfer efficiency in the case of figure (c) is the effect of bias charge rC
This is better than the case shown in Figure 4 (b). The transfer efficiency improvement effect due to this bias vlL is shown in Figure 5, 6g.
It is also clearly shown in the range ■ of ll16 fruits. However, in the conventional charge transfer imaging device shown in Fig. 1, since the photoelectrically converted signal charge has image information from the zero level, Fig. 5 shows the disadvantageous transfer efficiency improvement effect of bias charge. cannot be expected.
例えば、光電変換により得られた0、1OpCの侶号′
a曲が水平シフトレンスタを転送される一合を考えると
、この信号電画は第5図の範囲Iにボす転送動車劣化の
領域の影響も受けるため、必す電画の取り残し成分が発
生する。もっとも、光電変換餉城全(9)r(0,05
pC5aco電向菫を発生させるようなバイアス九を照
射することにより、バイアス電荷の効果を得ることはで
きるが、この場合の信号対雑音比の劣化は実用に耐え侮
るものではなかりだ。For example, the number ' of 0, 1 OpC obtained by photoelectric conversion
Considering the case where song a is transferred through a horizontal shift lens, this signal electric image is also affected by the area of transfer vehicle deterioration shown in range I in Fig. 5, so that some components of the electric image are inevitably left behind. . However, photoelectric conversion
Although it is possible to obtain the effect of a bias charge by irradiating with a bias 9 that generates pC5aco electric violet, the deterioration of the signal-to-noise ratio in this case is practical and cannot be underestimated.
本発明の目的はかかる欠点を除いた新規の電荷転送撮像
装置の駆動方法を提供することにある。An object of the present invention is to provide a novel method for driving a charge transfer imaging device that eliminates such drawbacks.
本発明によれば、同一基板上に形成されたiI倍倍速送
装置ら成る複数列の垂直シフトレンメタ群と、前記垂直
シフトレジスタ群に対応して配置さされた光電変換素子
群と、前記!l!山シフトレジスタ群の一端KM接して
設けられた*伺転送水平シフトレジスタと、前記垂直シ
フトレジスタ群の末端のチャネル領域を前記水平シフト
レンスタの水平電鍮転送亀働の一部で被うことにより設
けられた前記垂直シフトレジスタ群と前配水半シフトレ
ンスタとの結合部と、前記水平シフトレジスタの一端に
設けられた電荷検出部と、前記水平シフトレンスタの他
の一端に設けられた亀他入力部とからびる亀信転送偉*
装璽の駆動において、前記水平亀伺転込亀廟が#I!*
状紐′のときに形成される前1@合部の電位井戸に、f
#記電傭人力部から注入されるバイアス電鍔が入いり込
むよ5に、前記バイアス電信の量を設定することを特徴
とするKM転送抛像装麹の駆動方法が得られる。According to the present invention, a plurality of rows of vertical shift register groups formed on the same substrate are formed of iI double speed transfer devices, a photoelectric conversion element group arranged corresponding to the vertical shift register group, and the! l! A horizontal transfer register provided in contact with one end KM of the mountain shift register group and a channel region at the end of the vertical shift register group are provided by covering with a part of the horizontal electric brass transfer mechanism of the horizontal shift register group. a coupling part between the vertical shift register group and the front water distribution half shift register; a charge detection part provided at one end of the horizontal shift register; and an input part provided at the other end of the horizontal shift register. Biru Kamishin Transfer *
In the driving of the seal, the above-mentioned horizontal Kamebi Tikomi Kamebyo is #I! *
f in the potential well of the front 1@ joint formed when the
#A method for driving a KM transfer imager is obtained, characterized in that the amount of the bias electric current is set such that the bias electric current injected from the electric power unit penetrates.
次に本発明の実Jlli例について図面を用いて説明す
る。Next, an actual example of the present invention will be explained using the drawings.
本発明を実施するに必簀なIIL荷転送連痙装置の構造
は、第6図に示す麹り、第1図にボす従来例の水平シフ
トレジスタ12の一端に電画入力部60を設けるだけで
よい。第6図Kliいて第1り1と同一4#号のものは
同−桝成費翫を示している。The structure of the IIL load transfer linkage device necessary to carry out the present invention is as shown in FIG. 6, and the conventional horizontal shift register 12 shown in FIG. Just that is enough. In Figure 6 Kli, the number 4#, which is the same as No. 1, indicates the same box formation fee.
また、かかる構造の′II1.I転送撮懺装瀘の動作は
、第1図に示した従来例とはは同様なため、ここでは事
始8AK関係の株い水平シフトレンスタでの亀鉤転込の
模様について欧明する。Also, 'II1.' of such a structure. Since the operation of the I-transfer photographing arrangement is similar to that of the conventional example shown in FIG. 1, here we will briefly explain the process of transferring the turtle hook in the 8AK-related stock horizontal shift lens star.
本発明による′IIL伺転送撫像鉄直の駆動方法の特徴
は、第6図に4くす亀M入力部60から水平シフトレジ
スタ12へ常に一定量のバイアスを傭を注入することに
皮、る。ここで、−傭人)−,1鄭6 Qから’ik曲
を注入する方式としては、当該分針の技術者には燭知な
タイオード・力、トオフ法、麺、缶平−法等のいずれを
用いてもよい。また 注入するバイアス電傭飯L、象、
5図の笑澱結果の範囲1と範囲lの両方の領域をバイア
スtmで坤め尽くす倉に設定する。例えば、第5図の場
合では、0.059Cが最適バイアス電荷量となる。The feature of the driving method of the ``IIL transfer transfer'' according to the present invention is that a constant amount of bias is always injected from the 4-mass M input section 60 to the horizontal shift register 12 as shown in FIG. . Here, as a method for injecting the 'ik song from Q, the minute hand engineer should use any of the following methods: tiode force, tooff method, noodles, can-pei method, etc. May be used. Also, inject bias electricity L, elephant,
The bias tm is used to set both the range 1 and the range l of the sludge results in FIG. For example, in the case of FIG. 5, the optimum bias charge amount is 0.059C.
第7図は本発明による駆動方法を史に評細に紗明するだ
めの図で、第4凶と同様に、第3図に示す結合領域の断
面幽の各部分における電位分布が。FIG. 7 is a diagram for explaining the driving method according to the present invention in detail, and similarly to the fourth example, the potential distribution in each part of the cross section of the coupling region shown in FIG. 3 is shown.
垂直電荷転送電極21.22と水平m荷転送電極27が
オン状−で、垂直トランス7アグート電棚23がオフ状
態となる時点で模式的に示されている。同図において、
70は前述した%繭入力部60から注入されるバイアス
電荷であり、第5−の範lhIと範囲lの両方がバイア
ス電信で埋め尽くされた状態が示されている。このとき
、領域36下にもバイアス電画が存在している。また同
図において、71は光電変換索子11で光電変換され、
垂直シフトレジスタpi O?:介して水平シフトレジ
スタ12へ転送されて米た信号*傭であり、バイアス電
画70と共に領域36と領域37の両方に蓄えられる、
以上の動作に従えは、水平シフトレンスタでの信号鬼面
の転送は、転送動画の良い謝5−に示す範囲lで常に行
なわれることになり、従来の駆動方法にあった^輝度被
写体拗音時の映像の横方向の流れや、テレビ−歯石側の
再生i!Il儂の1ざけは完全に防止できる。また、水
平シフトレンスタのダイナミ、り・レンジも、第5図の
実揃結果に示す通り、範囲lを使う従来の駆動方法では
約200mV と非常に小さいが、範!IImを使う本
発明の駆動方法では約2■もあり、従来例に比べて10
倍近く改善される。さらに本発明ではバイアス電at−
純電気的に注入しているので、光電変換領域全面にバイ
アス元を照射する仁とによってバイアス電荷を発生させ
る従来の方式に比べて、照射むらやフリ、カーの影Vは
なく、′IIL@転送胸像装置全体の信号対雑音比を劣
化させることも少ない。本発明では、バイアx電傭の童
を最適−に遇ふことが最も電喪なホイントとなるが、本
4+#許の発明者による実験によれは、第5図の亀#4
蓋と非転送効率の関係を示すグラフのル状は、チャネル
員やナヤネル幅などのデバイスパラメーターやプロセス
条件が変化しない限り、チップごとのばらつくことは少
ない。さらに、バイアス電傭量の調整は、電荷入力部6
0に印加する直流バイアス電圧を変化させることにより
容易に行なえる。The vertical charge transfer electrodes 21, 22 and the horizontal charge transfer electrodes 27 are shown schematically at the time when they are in the on state and the vertical transformer 7 agoto electric shelf 23 is in the off state. In the same figure,
Reference numeral 70 denotes a bias charge injected from the above-mentioned %cocoon input section 60, and a state in which both the 5-th range lhI and the range l are filled with bias electric charges is shown. At this time, a bias electric image also exists under the area 36. Further, in the same figure, 71 is photoelectrically converted by the photoelectric conversion cable 11,
Vertical shift register pi O? : The signal is transferred to the horizontal shift register 12 via the bias voltage 70, and is stored in both areas 36 and 37 along with the bias voltage 70.
According to the above operation, the transfer of the signal on the horizontal shift lens is always carried out in the range l shown in 5-5 of the transfer video, which is the same as in the conventional drive method. The horizontal flow of the TV - Tartar side playback i! My first mistake is completely preventable. Furthermore, as shown in the actual alignment results in Figure 5, the dynamism and range of the horizontal shift lens star is very small at about 200 mV in the conventional drive method using the range l, but it is very small at about 200 mV. In the driving method of the present invention using IIm, the driving speed is about 2 mm, which is 10 mm compared to the conventional example.
Improved by almost twice as much. Furthermore, in the present invention, the bias voltage at-
Because the injection is done purely electrically, there is no uneven irradiation, false spots, or Kerr shadows compared to the conventional method, which generates bias charges by irradiating the entire photoelectric conversion region with a bias source. It also causes less deterioration of the signal-to-noise ratio of the entire transfer chest apparatus. In the present invention, the most effective hint is to optimally meet the child of Bahia x Electrician, but according to the experiment by the inventor of Book 4+#, the turtle #4 in Figure 5
The curve of the graph showing the relationship between the lid and the non-transfer efficiency does not vary from chip to chip unless device parameters such as channel length and channel width or process conditions change. Furthermore, the amount of bias electricity can be adjusted by the charge input section 6.
This can be easily done by changing the DC bias voltage applied to zero.
以上のように1本発明によれば、映像の横方向への流れ
やテレビ画面右側の!4荏6画像のばばが発生せず、し
かもダイナミ、り・レンジを広くとれる電画転送m像装
麹の駆動方法が得られる。As described above, according to the present invention, the horizontal flow of the video and the right side of the TV screen! It is possible to obtain a method for driving an electronic image transfer m-image device koji that does not generate 4-6 images and can have a wide dynamic range.
なお、ここでは本発明をインターライン転送方式のma
転送撮*懐装を使って説明したが、7レ一ム転送方式の
ものでも同様に実現できる。It should be noted that the present invention will be described here as an example of an interline transfer method.
Although the explanation was given using a transfer camera, it can be similarly achieved using a 7-rem transfer system.
秘1図゛はインターライン転送方式の撮像装置の械wl
I図、第21は第1図における垂1シフトレジスタと水
平シフトレンスタの結合領域の拡大図、第3図は第2#
IAの1−1線上の断面図、第4図(1)。
lb) @ tc)は第3図の各点に奢げる電位分布と
転送電値の様子を下す模式図であり、従来の駆動方法に
よるものを示している。また@5111は水平シフトレ
ンスタでの転送亀@蓋と非転送効率の関係を示す夾棚結
果、第6図は本発明の実施に必要な電荷入力部を設けた
インターライン転送方式撮像装置の機略図、第7図は本
発明による駆動方法を用いえときの第3図の各点におけ
る電位分布とgM−1!電背及びバイアス電荷の様子を
示す模式図である。
図において、lOは垂直シフトレジスタ群、11は光電
変換素子群、12は水平シフトレジスタ、13社電荷検
出部、14Fil直シフトレンスタと水平シフトレンス
タの結合領域、20は垂直シフトレジスタのチャネル領
域、21.22は垂直電荷転送電極、23は垂直トラン
スファゲート[4,24,37Fi水平シフトレジスタ
のチャネル領域、25〜29は水平電画転送電極、30
゜36は水平′1IlcW1転送%−の一部で被われた
垂直シフトレジスタの末端領域、311i半尋体基板、
32は絶縁揄、33は珈込みチャネル騰、34はチャネ
ルスト、プ領域、35は金属層、60は電荷入力部であ
る。
代域人fF忌士 内厚 葦
第1図
第2図
第3回
Cα)
34 37
36 37
36 3り
第5図
ヨー1力電Jゴヒ (V)
第6図
第7図
駕 37Figure 1 shows an image capture device using the interline transfer method.
Figure I, Figure 21 is an enlarged view of the coupling area of the vertical 1 shift register and horizontal shift register in Figure 1, and Figure 3 is the 2nd #
FIG. 4(1) is a cross-sectional view of IA along line 1-1. lb) @ tc) is a schematic diagram showing the potential distribution and transfer voltage value at each point in FIG. 3, and shows the conventional driving method. In addition, @5111 is the result showing the relationship between the transfer mechanism @ lid and non-transfer efficiency in a horizontal shift lens star, and Figure 6 is a schematic diagram of an interline transfer type imaging device equipped with a charge input section necessary for implementing the present invention. , FIG. 7 shows the potential distribution at each point in FIG. 3 and gM-1! when the driving method according to the present invention is used. It is a schematic diagram which shows the state of an electric back and a bias charge. In the figure, 1O is a vertical shift register group, 11 is a photoelectric conversion element group, 12 is a horizontal shift register, 13 is a charge detection unit, 14 is a coupling area between the Fil direct shift lens and horizontal shift lens, 20 is a channel area of the vertical shift register, 21. 22 is a vertical charge transfer electrode, 23 is a vertical transfer gate [4, 24, 37Fi channel region of horizontal shift register, 25 to 29 are horizontal charge transfer electrodes, 30
゜36 is the end area of the vertical shift register covered with a part of the horizontal '1IlcW1 transfer%-, 311i half-width board,
32 is an insulating layer, 33 is an indentation channel riser, 34 is a channel stop region, 35 is a metal layer, and 60 is a charge input portion. Daiken fF deceased Atsushi Uchi Atsushi Ashi Figure 1 Figure 2 Figure 3 Cα) 34 37 36 37 36 3 Figure 5 Yo 1 Rikiden J Gohi (V) Figure 6 Figure 7 Pavilion 37
Claims (1)
列の重置シフトレジスタ群と、前記垂直シフトレジスタ
群に対応して配置された光電変換素子群と、前記垂直シ
フトレンメタ群の一端に隣接して設けられた電荷転送水
平シフトレンスタと、前配坐直シフトレジスタ群の末−
のチャネル餉域を前記水平シフトレジスタの水平′#L
伺転送11橡の−酢で普うことにより設けられた前II
C垂直シフトレジスタ群と前記水モシフトレジスタとの
結合部と、Ail 糺水平シフトレジスタの一端に耽け
られた電信検出部と、前記水平シフトレジスタの他の一
端に設−丁られた一1荷入力部とからなる亀傭転送撮像
装亀の駆動において、前記水平′1Kf+1転送電秘か
&積状勘のときに形成される前記結合部の電位井戸に、
Fl’ll配′に仙入力部から注入されるバイアス電荷
が入いり込むようK、前記バイアス電荷の量を設定する
ことを特命とする電伺転送撮像装置の駆動方法。A plurality of rows of stacked shift register groups formed on a Toj-substrate including charge transfer devices, a photoelectric conversion element group arranged corresponding to the vertical shift register group, and adjacent to one end of the vertical shift register group. The charge transfer horizontal shift register provided at the front and the end of the front vertical shift register group
The channel area of the horizontal '#L' of the horizontal shift register is
Transfer 11 - Prepared by soaking with vinegar II
A connecting part between a group of vertical shift registers and the water shift register, a telegraph detection part installed at one end of the horizontal shift register, and one installed at the other end of the horizontal shift register. In the driving of the turtle transfer imaging device consisting of the load input part, the potential well of the coupling part formed when the horizontal '1Kf+1 transfer electric current is &
A method for driving a telegraph transfer imaging device in which the special mission is to set the amount of bias charge so that the bias charge injected from the sacral input section enters the Fl'll arrangement.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57008451A JPS58125978A (en) | 1982-01-22 | 1982-01-22 | Driving method of charge transfer image pickup device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57008451A JPS58125978A (en) | 1982-01-22 | 1982-01-22 | Driving method of charge transfer image pickup device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS58125978A true JPS58125978A (en) | 1983-07-27 |
Family
ID=11693485
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57008451A Pending JPS58125978A (en) | 1982-01-22 | 1982-01-22 | Driving method of charge transfer image pickup device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58125978A (en) |
-
1982
- 1982-01-22 JP JP57008451A patent/JPS58125978A/en active Pending
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