JPS58125968A - Solid-state image pickup device - Google Patents
Solid-state image pickup deviceInfo
- Publication number
- JPS58125968A JPS58125968A JP57008441A JP844182A JPS58125968A JP S58125968 A JPS58125968 A JP S58125968A JP 57008441 A JP57008441 A JP 57008441A JP 844182 A JP844182 A JP 844182A JP S58125968 A JPS58125968 A JP S58125968A
- Authority
- JP
- Japan
- Prior art keywords
- light
- film
- shielding layer
- solid
- light shielding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims description 37
- 238000003384 imaging method Methods 0.000 claims description 27
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 238000007743 anodising Methods 0.000 claims description 4
- 239000002344 surface layer Substances 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims 1
- 238000010030 laminating Methods 0.000 abstract description 2
- 238000002161 passivation Methods 0.000 abstract 2
- 239000007787 solid Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 21
- 239000000463 material Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 102100035526 B melanoma antigen 1 Human genes 0.000 description 1
- 101000874316 Homo sapiens B melanoma antigen 1 Proteins 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000010407 anodic oxide Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は固体撮像装置特にそＯ！１光層に閤するもので
あゐ向
固体撮像装置の基本的な動作は画素と呼ばれる領域での
光電変換と情報電荷の蓄積と各画素を走査して蓄積され
た電荷１ｓ次読み出すことから構成されて−る。DETAILED DESCRIPTION OF THE INVENTION The present invention is particularly applicable to solid-state imaging devices. The basic operation of a forward-facing solid-state imaging device consists of photoelectric conversion and accumulation of information charges in an area called a pixel, and scanning each pixel to read out the accumulated charges for 1 second. It's being done.
固体撮像装置の一例亡して各画素を走査して情報電荷を
読み出丁走査ＳにＣＣＤ あるいはＢＢＤなどの電荷
転送素子を使用したインターライｙ転送型固体撮會装置
Ｏ原理的な模式図を纂１図に一１画素の断面を示す模式
Ｗを第２図に示す一第１＠Ｋかいてマトリックス状に配
列した各々１画素として動作する多数Ｏ受光素子ｌと受
光素子ＩＫ蓄積された光情報に対応する電荷！−垂直方
向転送する垂直転送５ｓａａに出力部Ｓへ電荷を転送す
る水平・転送部４および受光素子ｌかも垂直転送［１１
３への電荷の転送を制御する転送グー）ＩＩ（図示ぜず
）とでインターライン転送ｉｌ＠体撮會素子が構ｗＬ堪
れて―る。An example of a solid-state imaging device is shown below, which scans each pixel to read out information charges.The following is a schematic diagram of the principle of an interline Y-transfer type solid-state imaging device that uses a charge transfer device such as a CCD or BBD for scanning S. Figure 1 shows a schematic cross-section of 11 pixels, and Figure 2 shows a large number of light-receiving elements L and light-receiving elements IK arranged in a matrix, each operating as one pixel. Charge corresponding to information! - Vertical transfer 5saa that transfers vertically, horizontal transfer section 4 that transfers charges to output section S, and light receiving element l may also be used for vertical transfer [11
The interline transfer system is configured with a transfer system II (not shown) that controls the transfer of charges to the interline transfer system.
これらＯ転送グー）１５．垂直転送Ｗおよび水平転送Ｓ
Ｃは遮光が必要であ！＋、第２図に示したように遮光層
６を設けて転送グー）ｓ！および転送ａＳＫ光の入射を
防止するように遮光！行っている（水平転送部につ−て
は図示せず）・更＃Ｃ１また水平走査部の一端の受光素
子群にも遮光を行って黒Ｏインデックス信号としてｉる
場合も参る・こむ遮光層６は従来ムｊＯ蒸着層で形成さ
れてか？、可視光に対して９２〜９０％ ｔ）反射率を
有するム１ｏｉ１１党層表面での反射光か固体撮像装置
を収納しているパッケージＯキャップガラスあるいは固
体撮像装置に愉を結像させるため０レンズ等の表面で繰
返して反射し、他の受光素子ｗＩＫＩ射して、撮（１さ
ｆＬπ画會を乱丁いわゆるフレア現象を生じさせるとい
う欠点があったー
特にここで−例として取り上げたインターライン転送型
固体撮俸装置では受光部に蓄積される電荷量と、転送最
大電荷量との関係から転送ｌＩＯ面積は撮像装置Ｏ有効
な受光領域（光電変換のための受光ｍが配置されて−る
領域）０１１に程＊１占めている。従って反射率の大き
なムｊで遮光層を形成した場合には入射光Ｏ＃にが遮光
層で反射されることにな９ツレアの影響が着るしい―と
０７レアを防止した遮光層として実開ｗＢｓｓ−１３７
５６８号に示されている工うに有機高分子樹脂の黒色膜
、有機染料参るｖｈは顔料の黒色膜、あるいは人ｊｌｌ
ｌｔ陽極酸化してムＪｔｏｍ膜としこれｔ黒色に染色し
た膜、更にＰｂ８．８ｎ８ などによる黒色薄膜を使
用した囲体撮像素子が提案されている。These O transfers) 15. Vertical transfer W and horizontal transfer S
C needs light shielding! +, as shown in FIG. 2, a light shielding layer 6 is provided to transfer the data) s! And light shielding to prevent the incidence of transferred aSK light! (The horizontal transfer section is not shown).Additionally, there is also a case where the light-receiving element group at one end of the horizontal scanning section is also shielded from light and output as a black O index signal. 6 is conventionally formed with a MujO vapor deposited layer? , 92 to 90% for visible light t) Reflected light on the surface of the layer that has a reflectance or the package O cap glass containing the solid-state imaging device or 0 to form an image on the solid-state imaging device. It has the disadvantage that it is repeatedly reflected on the surface of the lens, etc., and irradiated to other light receiving elements, causing a so-called flare phenomenon in the image (1 fLπ image). In a transfer type solid-state imaging device, the transfer lIO area is determined by the relationship between the amount of charge accumulated in the light receiving section and the maximum amount of charge transferred. area) 011. Therefore, if a light-shielding layer is formed with a large reflectance, the incident light O# will be reflected by the light-shielding layer, and the influence of 9th ray will be exerted. As a light shielding layer that prevents 07 rare
The black film of organic polymer resin shown in No. 568, the vh of organic dye, is the black film of pigment, or
Surrounding imaging devices have been proposed that use a Jtom film that is anodized and dyed black, and a black thin film made of Pb8.8n8 or the like.
ところがここに示されて％Ａ４ような材料を使用丁４ｃ
とは半導体装置としてＶ信頼性に欠けるという欠点かあ
った。更にこれらの材料によって遮光層を形成すること
は製造工Ｓｔ複雑にすると−う欠点もあった。However, as shown here, a material like %A4 is used.
However, as a semiconductor device, it had the disadvantage of lacking V reliability. Furthermore, forming a light shielding layer using these materials has the disadvantage that the manufacturing process is complicated.
本発明の目的は半導体装置として信頼性が高く。An object of the present invention is to provide a highly reliable semiconductor device.
製造工程−簡単な、フレアを防止できる遮光層【有する
固体撮像装置を提供することにある一不発明によｆＬは
固体撮像装置の走査Ｓｔ迩光するための遮光層ｔＪｘＡ
ｊ膜上Ｋ ８ ｉ膜を積層して構成されるか、或Ｖｋは
８１ を含有するムｊ合金によって形成され、その光入
射側０表面層を陽極酸化して形成されて−ることｔ特徴
とする固体撮像装置が得らｎるー
ｆＩｉ記不発明にＬれｄ半導体装置として信頼性が高く
、製造工程が簡単で、フレア現象Ｏ無い固体撮像装置が
実現さ詐る一
本発明でσ遮光層を槽底する材料はムｊと８１Ｔ。Manufacturing process - It is an object of the present invention to provide a solid-state imaging device having a simple light-shielding layer that can prevent flare.
It is formed by laminating a K 8 i film on a K 8 i film, or it is formed by a Muj alloy containing Vk 81 and is formed by anodizing the light incident side 0 surface layer. The present invention makes it possible to obtain a solid-state imaging device that is highly reliable as a semiconductor device, has a simple manufacturing process, and does not have the flare phenomenon. The material that forms the bottom of the tank is Muj and 81T.
るＩＡｄ８１１−含むＡｊ合金とその陽極酸化膜で６９
、これらは半導体装置を構成する主要材料であるため、
信頼性については全く心配が無い一１ｔム遥膜上に８１
１［Ｖ積層した遮光層では８１膜お工びムＡｌｌが同一
にエツチング可能で、製造工程が簡単になる。69 with IAd811-containing Aj alloy and its anodized film
, these are the main materials that make up semiconductor devices, so
There is no need to worry about reliability.
1[V] In the laminated light shielding layer, all 81 films can be etched in the same way, simplifying the manufacturing process.
１．５−以上８ｉ を含むムｊ合金の陽ｉｉｍ化膜は灰
色ないし黒色になり、陽極酸化するＯみで反射率を低減
できるため陽極酸化後、黒色染色や封孔処理か不要であ
り、製造工程が簡単である・更に不発明によれば光の入
射側の面が８１あるいは８遍を含むＡ）合金のＩＩ極極
北化膜１りｏ１反射率Ｆｘ３ｏ 憾以下とな５７レア現
象は大巾に低減できる−
先に述ヘタ実開″昭５５−１３７５６８号ｒａｃｖｎＫ
：ｚるパッジベージ諺ン膜のピンホールが不可避であり
、そのため導電性物質による遮光層では多結晶８１電極
と短絡するため遮光層材料は絶縁材料でなければならな
いと述べられて−るｔＩＸ１１１！際にはこのような現
象は生じていない、ＣｒｔはＣＶＤ Ｋ１６パツシベ一
シ冒ン層は多孔性ではあって！ｈ表面から内部１で直線
的に穴が生じては−１にいためと考えられる。従って遮
光層を構成する材料は絶縁材料である必要は無偽のであ
る。The anodized film of the Muj alloy containing 1.5-8i or more becomes gray or black, and the reflectance can be reduced by using O during anodizing, so there is no need for black staining or sealing treatment after anodizing. The manufacturing process is simple.Furthermore, according to the invention, the surface on the incident side of light includes 81 or 8 layers A) Alloy II polarized film 1 l o 1 reflectance F x 3 o less than 57 Rare phenomenon is large The width can be reduced to 1980-137568, as mentioned earlier
It is stated that the material of the light shielding layer must be an insulating material because pinholes in the film are unavoidable, and therefore a light shielding layer made of a conductive material will short-circuit with the polycrystalline 81 electrode. In reality, such a phenomenon does not occur; Crt is a CVD K16 adhesive, and the corrosion layer is porous! It is thought that if a hole is formed linearly from the h surface to the inside 1, it will become -1. Therefore, there is no need for the material constituting the light shielding layer to be an insulating material.
以下実施例により不発明を説明する。The invention will be explained below with reference to Examples.
実施例！。Example! .
シリーンウエハー上に第ＲＷＪに示す工うに通常のプロ
セスによりインターライｙ転送ｆｉｃｃＤＪＩ偉装置の
受光部ｌ、転送ゲート１１２．！Ｉ直転送部３％水平転
送部（図示せず）管形成し、更にバッジペ−シーン層７
Ｙｔ形成し１次にＡｊ膜６１および８過膜６２會真空蒸
着あるいはスパッタリングによって形成し、パターン化
して遮光層とした。更にζυ上にパッジページｗｓ’層
を形成して固体撮像装置ｒｌｌた。なお第３図では遮光
層以外の詳細な図は省略した。この固体撮像装置を組み
立てて、撮像したところフレアのない良好な撮像特性が
得られｔ・
実施例λ
実施例１と同様にしてムｊ膜６１を形成後ＣＶＤＫより
多結晶８に膜６２を積層してパターン化し。A conventional process shown in RWJ is performed on the serial wafer to interlay the light receiving section 112 of the DJI device and the transfer gate 112. ! A 3% horizontal transfer section (not shown) is formed in the I direct transfer section, and a badge pagene layer 7 is formed.
After forming Yt, first, an Aj film 61 and an 8-layer film 62 were formed by vacuum evaporation or sputtering, and were patterned to form a light-shielding layer. Furthermore, a pad page ws' layer was formed on ζυ to form a solid-state imaging device rll. In addition, in FIG. 3, detailed diagrams other than the light-shielding layer are omitted. When this solid-state imaging device was assembled and imaged, good imaging characteristics without flare were obtained.Example λ After forming the muj film 61 in the same manner as in Example 1, the film 62 was laminated on the polycrystalline 8 using CVDK. and make a pattern.
固体撮像装置を得た。この固体撮像装置による撮像特性
も実施例１と同様に十分満足できるもので６った・
実施例１お１び２ともムｊ膜上に８ｉ１［を積層した遮
光層でＴｏす、実施例ｎｏ８１１Ｆ！非結晶８Ｍ膜、実
施例２の場合は多結晶Ｓｉ膜であるがどちらＯ場合も遮
光層の反射率は受光部とはソ同様でＴｏ９．ムｊＩ［単
独の場合に比べて大巾に低減式ｎていたー
実施例１
実施例、ｌと同様にして第４１１に示すように受光部１
．転送ゲート部２、垂直転送部３．水平転送ｌＢ（図示
せず）、パッジベージ−７層７１１−形成した０次に８
ｉをＩＱチ含むＡｊｊ金１１［６３をスパッタリングＩ
ＩＣよって形成し、次なこの人！合金膜の表面を陽極酸
化膜６４とし、更に仁れｗパターン化して遮光層を形成
したーこＯ！１光層上に更にパッジベージ−７層を形成
して固体撮像装置を得た。この遮光層は暗灰色で６０、
反射率が大巾に低減さｎていた・この固体撮像装置によ
る撮像特性も実施例１および２と同様に十分満足できる
一〇であったー
以上の不発明の説明および実施例に訃いてはインタライ
ン転送型固体撮像装置について説明したが、フレアはイ
ンタライン転送型固体撮像装置で生じゃ丁いものである
ため、これｔ例として説明して１またのであり他の方式
による固体撮像装置においてｔ本発明が実施できること
は明らかであろう−
また実施例にお−てＦｉ迩遮光ｔパッジページ雪ン層上
あるいはパッジベージ１ｙ層中に般社たが。A solid-state imaging device was obtained. The imaging characteristics of this solid-state imaging device were also sufficiently satisfactory as in Example 1. Examples 1 and 2 both had a light shielding layer laminated with 8i1 on the muj film, Example No. 811F. ! In the case of the amorphous 8M film and the polycrystalline Si film in the case of Example 2, the reflectance of the light-shielding layer is the same as that of the light-receiving part in both cases, and To9. Embodiment 1 In the same manner as in Embodiment 1, as shown in No. 411, the light receiving section 1 was
．． Transfer gate section 2, vertical transfer section 3. Horizontal transfer lB (not shown), padge page - 7 layer 711 - formed 0th order 8
Ajj Gold 11 [63 including IQ] sputtering I
Formed by IC, this person is next! The surface of the alloy film was made into an anodic oxide film 64 and further patterned to form a light shielding layer. A solid-state imaging device was obtained by further forming 7 layers of PADGE BAGE on the 1st optical layer. This light shielding layer is dark gray and has a color of 60,
The reflectance was greatly reduced.The imaging characteristics of this solid-state imaging device were also sufficiently satisfactory as in Examples 1 and 2. Although we have explained the interline transfer type solid-state imaging device, since flare cannot be produced in the interline transfer type solid-state imaging device, we will explain this as an example. It will be clear that the present invention can be carried out in the following embodiments using a light-shielding layer on the layer or in the layer on the layer.
不発明は配線あるいは電極が遮光層を兼ねているような
場合ｖｌ−−適用できる。The non-invention can be applied in cases where wiring or electrodes also serve as a light-shielding layer.
＄８１１１およびＩＩ！２図は固体撮像装置の一例を示
す模式図で６９．第３図および第４図は本発明の各実施
例を示す図である。
図において、ｌは受光素子、２は伝単グー）ｗｌ。
３は垂直転送ＩＢ、 ４は水平転送部、５は出力部。
６は遮光層、７はパッジベージ−７層であり、６１はム
１１［６２は８１１１．６３は８１ｔ−含むＡｊ會全金
膜６４は８１に含む人！合金の陽極酸化膜である―
第１区
第２区
′ｆ）３目 １４１ｇ$8111 and II! Figure 2 is a schematic diagram showing an example of a solid-state imaging device. FIG. 3 and FIG. 4 are diagrams showing each embodiment of the present invention. In the figure, l is a light receiving element, and 2 is a transmitter) wl. 3 is a vertical transfer IB, 4 is a horizontal transfer section, and 5 is an output section. 6 is the light shielding layer, 7 is the padgebege-7 layer, 61 is the mu 11 [62 is 8111.63 is 81t-containing Aj meeting all gold film 64 is included in 81! It is an anodized film of the alloy - Section 1, Section 2 'f) 3, 141g
Claims (1)
所定Ｏピッチを持って設けられた複数の受光素子と％該
受光素子を水平および垂直方向に走査し、前記受光素子
に蓄積１ＪｆＬ究電荷！職次読み出丁走査部とｔ有丁４
ｉ１体撮僚素子にお−で、前記受光素子以外の領域に光
が入射しないように設けられて−る遮光層−ｔＩＫ、ム
ｊ膜上に８ｉ膜を積層して構成されてなることを特徴と
する固体撮像装置。 λ 同一結像面内に水平走査方向と垂直走査方向に各々
所定Ｏピッチを持って設けられた複数Ｏ受光素子と、酸
受光素子を水平および垂直方向に走査し、前記受光素子
に蓄積された電荷で順次読み出す走査ｍとを有する圃体
撮＊装置において、前記受光素子以外の領域に光が入射
し１ｋｖｈように設けられている遮光層が％ａｌ を含
むムｊ合金層で形成され、かつ該ムｊ合金層の表面層が
陽極酸化されて碌ることｗｌｌｌｉ徽とする固体撮像装
置。[Claims]! , a plurality of light receiving elements provided with a predetermined pitch of O in the horizontal scanning direction and the vertical scanning direction in the same imaging plane, respectively, are scanned in the horizontal and vertical directions, and 1JfL is accumulated in the light receiving elements. charge! Job title reading page scanning unit and t page 4
The light-shielding layer provided on the i1 body camera element to prevent light from entering areas other than the light receiving element is composed of an 8i film laminated on a tIK and muj film. Characteristic solid-state imaging device. λ A plurality of O light-receiving elements provided with a predetermined O pitch in the horizontal scanning direction and the vertical scanning direction in the same imaging plane, and an acid light-receiving element are scanned in the horizontal and vertical directions, and the light accumulated in the light-receiving element is In a field imaging *device having a scan m that sequentially reads out images using charges, a light shielding layer provided so that light enters a region other than the light receiving element and is provided at 1 kVh is formed of a muj alloy layer containing %al, and A solid-state imaging device in which the surface layer of the Muj alloy layer is enhanced by anodizing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57008441A JPS58125968A (en) | 1982-01-22 | 1982-01-22 | Solid-state image pickup device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57008441A JPS58125968A (en) | 1982-01-22 | 1982-01-22 | Solid-state image pickup device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58125968A true JPS58125968A (en) | 1983-07-27 |
| JPH0414550B2 JPH0414550B2 (en) | 1992-03-13 |
Family
ID=11693210
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57008441A Granted JPS58125968A (en) | 1982-01-22 | 1982-01-22 | Solid-state image pickup device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58125968A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03257966A (en) * | 1990-03-08 | 1991-11-18 | Matsushita Electron Corp | Manufacture of solid-state image sensing device |
| US5455624A (en) * | 1991-06-12 | 1995-10-03 | Sharp Kabushiki Kaisha | Solid image pick-up element |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51136234A (en) * | 1975-05-21 | 1976-11-25 | Toshiba Corp | Solid state image device |
| JPS52144218A (en) * | 1976-05-26 | 1977-12-01 | Sony Corp | Solid pickup element |
| JPS5844867A (en) * | 1981-09-11 | 1983-03-15 | Toshiba Corp | Solid-state image pickup device and its manufacture |
-
1982
- 1982-01-22 JP JP57008441A patent/JPS58125968A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51136234A (en) * | 1975-05-21 | 1976-11-25 | Toshiba Corp | Solid state image device |
| JPS52144218A (en) * | 1976-05-26 | 1977-12-01 | Sony Corp | Solid pickup element |
| JPS5844867A (en) * | 1981-09-11 | 1983-03-15 | Toshiba Corp | Solid-state image pickup device and its manufacture |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03257966A (en) * | 1990-03-08 | 1991-11-18 | Matsushita Electron Corp | Manufacture of solid-state image sensing device |
| US5455624A (en) * | 1991-06-12 | 1995-10-03 | Sharp Kabushiki Kaisha | Solid image pick-up element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0414550B2 (en) | 1992-03-13 |
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