JPS58125673A - Diffusion joining method - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed description of the invention] This invention applies to ceramics, especially silicon-based ceramic A3. Concerning diffusion bonding methods for Nox and ferrous metals.

Silicon-based ceramics have been developed particularly recently, and their excellent properties are attracting attention. However, in order to put such ceramics into practical use, only a small amount of ceramic is required.1 In order to reduce the thickness, it is often used by bonding it to a metal base. However, there are various difficulties in bonding silicon-based ceramics and metals. In other words, conventional methods for bonding ceramics and metals include metallization, high melting point method 1, and methods using organic or inorganic adhesives. However, the former two have drawbacks, such as the fact that it takes time to join and does not provide sufficient joint strength, while the latter has the disadvantages of being water-based, having poor airtightness, and making the joint difficult. There are disadvantages such as short lifespan.

On the other hand, the recently developed diffusion bonding method is generally known as an effective bonding method, but there are various difficulties when bonding objects are ceramics and metals, so it has not been put into practical use until now. There's nothing.

Therefore, the inventor of this invention tried to resolve the above-mentioned problems by specifically working on diffusion bonding between silicon-based ceramics and iron-based metals, and as a result, made a divine effort. To complete this invention method, there are 0
, that is, silicon in silicon-based ceramics (
A eutectic reaction occurs with the Si) component at high temperatures, and a eutectic reaction with a second metal (described later).
In other words, silver (A, g), aluminum (h, g, gold (An), beryllium (Be), etc. are selected as the first metal), and A metal that undergoes a eutectic reaction with an iron-based metal, and whose coefficient of thermal expansion is between that of the ceramic and that of the iron-based metal, or the same value as that of the iron-based metal. (i.e. second metal) such as copper (Cu), titanium (TI), nickel (N1), beryllium (Be), cerium (Ce), germanium (Ge), antimony (
Sb),) lium (Th), zirconium (Zr), etc. were selected.

Diffusion bonding is then performed between the SiC and the ferrous metal by using a first metal in contact with the SiC and a second metal in contact with the ferrous metal as insert materials. The first metal and the second metal may be not only the single metals mentioned above, but also alloys containing these metals as main components.

In any case, the inventor focused on silicon carbide (SiC), which has excellent wear resistance and is highly practical among silicon-based ceramics, as one of the bonding materials, and stainless steel (stainless steel), which is an iron-based metal, on the other hand. We selected SUS304) and tried various diffusion bonding methods.

Of the first metals, Ag and Aυ have particularly good bonding performance and are economical, which is undesirable. Among the second metals, Ti and Cu are most preferable for Ag as the first metal, and 1 and Ni are the most preferable second metals for At. Ta.

In these cases, Ag and At as the first metal may be a 10-gauge 100 pm foil, or a material plated by vapor deposition, sputtering, etc. on the SiC bonding surface, or on the bonding surface on the second metal side. good. The thickness of the second metal plate should be selected to be a sufficient value to absorb the difference in thermal stress between SiC and stainless steel caused by heating and cooling during diffusion bonding, for example, 01 to 2.
is too hopeful.

Table 1 shows examples of the thermal expansion coefficients of the joints and the second metal used in the examples of this invention.

- Also, the specifications of the example test pieces are as shown in Table 2.

Table 1 Coefficient of thermal expansion of bonding material and second metal (×101
0c) Table 2 Specifications of bonding material Cup 7 Examples of the present invention will be described in detail below.

Example 1 (Ag-Ti insert material) The bonded material having the specifications shown in Table 2 and the insert material were ultrasonically cleaned in acetone for 10 minutes. Thickness: 50μm as insert
A, g foil is used as the first metal 1, T1 sheet with a thickness of 1 m is used as the second metal 2, and a vacuum of about 10-5 Torr is placed between the bonding materials 3 and 4 shown in Table 2 (refer to the drawing). Inside,
Bonding temperature 8500C and 900LJC1 bonding pressure approx. 2
Expansion bonding was carried out at 5 kg/- for 60 minutes. As a result, good bonding was obtained at each temperature. The shear strength at this time was 10 kq/mA, and the SiC side was peeled off or the SiC was damaged.

Example 2 (Insert material Ag-Cu) The bonding material and insert material were pretreated in the same manner as in Example 1. As the insert material, Ag foil with a thickness of 50 μm was used as the first
The metal 1 was used as the second metal 2, and a Cu sheet with a thickness of 0.8 mm was used as the second metal 2. They were stacked on top of each other in the same manner as in Example 1, and diffusion bonded under the same conditions. As a result, good bonding was obtained at each temperature. The shear strength at this time was 1.0.5 kq/ma, and it was peeled off with SiC I[111].

Example 3 (Inser)/4 At-Tl) In the same manner as in Example 1, the bond removal and In2-1/R were pretreated. As the insert u, an At foil with a thickness of 601 nm was used as the first metal, and an At foil with a thickness of 601 nm was used as the second metal. The bonding temperature was 650°C and 700°C, and the bonding pressure was approximately 2.5 kg/f+uf for 60 minutes each. The shear strength at this time was 4 to 7/-, and the peeled SiC11111 was 0, Example 4 (t-N1 to the insert material). -1. The old was pretreated. At foil with a thickness of 60 μm was used as the insert paulownia for the first
as a metal, and a Ni sheet with a thickness of 1 as the second metal,
11 were assembled in the same manner as in Example 1, and the bonding temperature was 700°C and 75°C in a vacuum of about 1O-5Torr.
Diffusion bonding was carried out for 60 minutes each at a C1 bonding pressure of approximately 1000 ky/mA.As a result, 14 good bonds were made at each temperature.The shear strength was 0.3 It was 2 to 7/-, and peeled off on the SiC side.

In addition to the above examples, similar results were obtained by using, for example, SiC coated on a carbon base material. In addition to stainless steel, similar results can be obtained with other iron-based metals.

In addition, the first metal and the second metal in the above-mentioned embodiment were selected from the most effective combination, but in addition to these, the first metal such as Ag+ At, Au, Be, etc., and Cu, Tis NL Bet Ce,
Some results were also obtained with various combinations of second metals such as Ge, Sb, Th, and Zr.

Even when silicon nitride (5i3N4) was used as the silicon-based ceramic in addition to sSiC, almost the same results were obtained.

In contrast to the above-mentioned example, in cases where no insert material was used or only one yuzu was used, no bonding was performed. These results are shown in Table 3 as a control example.

10 Table 3 Comparison Example: However, bonding and insert removal were carried out in a vacuum of about 10-5 Torr, bonding pressure and time: about 2-5 minutes. 7/-160 minutes, P; junction boundary ifn SiC1tllll peeling, D; S
IC is destroyed.

As has been made clear from the above explanation, the method of this invention has a unique and remarkable effect of being able to reliably and firmly diffuse and combine the silicon-based ceramic 7NOx and the iron-based metal. be.

[Brief explanation of the drawing]

Flat 11 The drawing is a side view of an embodiment joined by the method of this invention. 1...First metal, 2...Second metal, 3...Silicon-based ceramics, 4...Iron-based metal. Applicant ShinMaywa Industries Co., Ltd. Agent Tadashi Bengami (and 1 other person) Engraving of drawings (no changes in content) Procedures Amendment IL) (Homin) April 1980
July 30th, Showa st 7th year, Foundry Application No. 5770 2, the name of the D-ba, the old Tokoku Ota 3, relationship with the case to be amended J↑”TR'f Applicant Address: Nishinomiya City, Hyogo Prefecture Ozone-cho 1-5-25 Name (
235) ShinMaywa Industries Co., Ltd. Address: 6-107 Takkino-cho, Nishinomiya City, Hyogo Prefecture, 663 ShinMaywa Industries Co., Ltd. Development Center (0798) 51-7734 (Main) Procedures Amendment 2, Benefit P Name of ``No'' Hironi #8 Rikkei 3, Relationship with the person making the amendment Bamboo tube applicant address 1-5-25 Kozone-cho, Nishinomiya City, Hyogo Prefecture Seriku Chi 6=6=3= Residence -・- 1 Hyogo Prefecture Nishinomiya City Takonno IIt] -641 Responsibility H-To Banashi Howa Kogyo Co., Ltd. Development Seven = Hei = = fE L = (=0798) 5-1 = 7"? = F
4'(?Gobe name;=I--"k-qsa 5, date of amendment order 1 cold 6, q of invention increased by amendment 7, subject of amendment 2 (1) Ming, invention of I+llll book Detailed explanation column (2)
Column for brief explanation of drawings in Specification 1 (3) Drawing 8, contents of amendment (1) The following statement is inserted between the 6th line and the 5th line from the bottom of page 10 of Specification 1. [Furthermore, among the above-mentioned Examples, FIG.
Table 4 shows the point analysis results at each position of numerals 1 to 9 in the photograph of the figure. Also, among the aforementioned examples, Example 3
FIG. 3 shows a metallurgical microscopic photograph of the bonded portion of the sample according to the method, and Table 5 shows the point analysis results at each position of numerals 1 to 6 in the photograph of FIG. The apparatus used for these analyzes was MAX-560 model (energy dispersion type) manufactured by Hitachi, Ltd. According to the trenches, diffusion has been observed at the joints. 4 (2) Specification box 11 page i1; 1st line 1 - The drawing is...
1. Figure 1 is corrected to ``...''. (3) Ministry of Specification, page 11, line 2, “This is a side view.” Next to “!f,” Figures 2 and 3 are Embodiment 1 of this invention.
3 is a metallurgical micrograph of a joint location in Example 3. ”
Add the following description. (4) We apologize for the inconvenience, but as written in red in Attachment 5 of the drawings that we have already submitted, we would like to ask you to add the 3 letters in Figure 1 j.

Claims (7)

[Claims] (1) A method of diffusion bonding silicon-based ceramics and iron-based metals, in which at least two types of inserts are used that are in contact with the ceramic side and the iron-based metal side, and the insert material that is in contact with the ceramic side is The insert material in contact with the iron-based metal side is a metal whose main component is a first metal that can undergo a eutectic reaction with the Si component of The diffusion bonding method is characterized in that the second metal is a metal whose main component is a second metal having a value intermediate between that of the ceramic and that of the iron-based metal or the same value as the iron-based metal. (2) The diffusion bonding method according to claim 1, wherein the first metal is a thin film and the second metal is a thin plate. (3) The diffusion bonding method according to claim 1, wherein the ceramic is SiC and the iron thread is stainless steel. (4) The ceramic has 5iCf, the first iron thread metal is stainless steel, the first metal is Ag, and the second metal is stainless steel. The diffusion bonding method according to claim 1, wherein the metal is T1. (5) The ceramic is SiC, the iron-based metal is stainless steel, and furthermore, +iiJ, first total first metal i? J′lJ The second metal is Cu, especially i
f'l. Diffusion bonding method according to claim 1. (6) The diffusion method according to claim 1, wherein the ceramic is SiC, the iron-based metal is stainless steel, the first metal is At, and the second metal is Ti. Joining method. (7) Nil Ceramics is SiC, the iron-based metal is stainless steel, and Nij No. 1
2. The diffusion bonding method according to claim 1, wherein the metal is At and the second metal is Ni.