JPS58121624A - SiC基板へのP型不純物拡散方法 - Google Patents

SiC基板へのP型不純物拡散方法

Info

Publication number
JPS58121624A
JPS58121624A JP57004391A JP439182A JPS58121624A JP S58121624 A JPS58121624 A JP S58121624A JP 57004391 A JP57004391 A JP 57004391A JP 439182 A JP439182 A JP 439182A JP S58121624 A JPS58121624 A JP S58121624A
Authority
JP
Japan
Prior art keywords
substrate
layer
amorphous
type impurity
impurity diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57004391A
Other languages
English (en)
Japanese (ja)
Other versions
JPH043664B2 (OSRAM
Inventor
Toshitake Nakada
中田 俊武
Kiyoshi Yoneda
清 米田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP57004391A priority Critical patent/JPS58121624A/ja
Publication of JPS58121624A publication Critical patent/JPS58121624A/ja
Publication of JPH043664B2 publication Critical patent/JPH043664B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325Silicon carbide

Landscapes

  • Led Devices (AREA)
JP57004391A 1982-01-13 1982-01-13 SiC基板へのP型不純物拡散方法 Granted JPS58121624A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57004391A JPS58121624A (ja) 1982-01-13 1982-01-13 SiC基板へのP型不純物拡散方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57004391A JPS58121624A (ja) 1982-01-13 1982-01-13 SiC基板へのP型不純物拡散方法

Publications (2)

Publication Number Publication Date
JPS58121624A true JPS58121624A (ja) 1983-07-20
JPH043664B2 JPH043664B2 (OSRAM) 1992-01-23

Family

ID=11583049

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57004391A Granted JPS58121624A (ja) 1982-01-13 1982-01-13 SiC基板へのP型不純物拡散方法

Country Status (1)

Country Link
JP (1) JPS58121624A (OSRAM)

Also Published As

Publication number Publication date
JPH043664B2 (OSRAM) 1992-01-23

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