JPS58119631A - 薄膜生成装置 - Google Patents

薄膜生成装置

Info

Publication number
JPS58119631A
JPS58119631A JP57001042A JP104282A JPS58119631A JP S58119631 A JPS58119631 A JP S58119631A JP 57001042 A JP57001042 A JP 57001042A JP 104282 A JP104282 A JP 104282A JP S58119631 A JPS58119631 A JP S58119631A
Authority
JP
Japan
Prior art keywords
jig
reaction tube
thin film
reaction
flakes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57001042A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0136246B2 (https=
Inventor
Sumio Mizuno
水野　純男
Tetsuo Fujii
哲夫 藤井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP57001042A priority Critical patent/JPS58119631A/ja
Publication of JPS58119631A publication Critical patent/JPS58119631A/ja
Publication of JPH0136246B2 publication Critical patent/JPH0136246B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP57001042A 1982-01-08 1982-01-08 薄膜生成装置 Granted JPS58119631A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57001042A JPS58119631A (ja) 1982-01-08 1982-01-08 薄膜生成装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57001042A JPS58119631A (ja) 1982-01-08 1982-01-08 薄膜生成装置

Publications (2)

Publication Number Publication Date
JPS58119631A true JPS58119631A (ja) 1983-07-16
JPH0136246B2 JPH0136246B2 (https=) 1989-07-31

Family

ID=11490500

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57001042A Granted JPS58119631A (ja) 1982-01-08 1982-01-08 薄膜生成装置

Country Status (1)

Country Link
JP (1) JPS58119631A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63206383A (ja) * 1987-02-19 1988-08-25 Nec Corp 気相成長装置
WO2010020446A1 (en) * 2008-08-19 2010-02-25 Oerlikon Solar Ip Ag, Trübbach Trap

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0458444U (https=) * 1990-09-28 1992-05-19

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63206383A (ja) * 1987-02-19 1988-08-25 Nec Corp 気相成長装置
WO2010020446A1 (en) * 2008-08-19 2010-02-25 Oerlikon Solar Ip Ag, Trübbach Trap

Also Published As

Publication number Publication date
JPH0136246B2 (https=) 1989-07-31

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