JPS58114528A - GaAs論理集積回路 - Google Patents
GaAs論理集積回路Info
- Publication number
- JPS58114528A JPS58114528A JP56214911A JP21491181A JPS58114528A JP S58114528 A JPS58114528 A JP S58114528A JP 56214911 A JP56214911 A JP 56214911A JP 21491181 A JP21491181 A JP 21491181A JP S58114528 A JPS58114528 A JP S58114528A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- fet
- gaas
- logic
- fets
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/09403—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors
- H03K19/09407—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors of the same canal type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0952—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using Schottky type FET MESFET
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Logic Circuits (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56214911A JPS58114528A (ja) | 1981-12-26 | 1981-12-26 | GaAs論理集積回路 |
| US06/449,997 US4518871A (en) | 1981-12-26 | 1982-12-15 | Ga/As NOR/NAND gate circuit using enhancement mode FET's |
| DE8282306768T DE3274040D1 (en) | 1981-12-26 | 1982-12-17 | An integrated logic circuit |
| EP82306768A EP0083181B1 (en) | 1981-12-26 | 1982-12-17 | An integrated logic circuit |
| CA000418567A CA1189579A (en) | 1981-12-26 | 1982-12-24 | Integrated logic circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56214911A JPS58114528A (ja) | 1981-12-26 | 1981-12-26 | GaAs論理集積回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58114528A true JPS58114528A (ja) | 1983-07-07 |
| JPH0421371B2 JPH0421371B2 (cg-RX-API-DMAC7.html) | 1992-04-09 |
Family
ID=16663608
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56214911A Granted JPS58114528A (ja) | 1981-12-26 | 1981-12-26 | GaAs論理集積回路 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4518871A (cg-RX-API-DMAC7.html) |
| EP (1) | EP0083181B1 (cg-RX-API-DMAC7.html) |
| JP (1) | JPS58114528A (cg-RX-API-DMAC7.html) |
| CA (1) | CA1189579A (cg-RX-API-DMAC7.html) |
| DE (1) | DE3274040D1 (cg-RX-API-DMAC7.html) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2559323B1 (fr) * | 1984-02-08 | 1986-06-20 | Labo Electronique Physique | Circuit logique elementaire realise a l'aide de transistors a effet de champ en arseniure de gallium et compatible avec la technologie ecl 100 k |
| JPS61125224A (ja) * | 1984-11-21 | 1986-06-12 | Sony Corp | 半導体回路装置 |
| FR2574605B1 (fr) * | 1984-12-07 | 1990-12-28 | Labo Electronique Physique | Circuit integre du type bascule bistable |
| US4695743A (en) * | 1985-10-23 | 1987-09-22 | Hughes Aircraft Company | Multiple input dissymmetric latch |
| US4705967A (en) * | 1985-10-31 | 1987-11-10 | Hazeltine Corporation | Multifunction floating FET circuit |
| JPS64817A (en) * | 1987-03-11 | 1989-01-05 | Fujitsu Ltd | Logic circuit |
| US4877976A (en) * | 1987-03-13 | 1989-10-31 | Gould Inc. | Cascade FET logic circuits |
| US4800303A (en) * | 1987-05-19 | 1989-01-24 | Gazelle Microcircuits, Inc. | TTL compatible output buffer |
| US4845681A (en) * | 1987-10-02 | 1989-07-04 | Honeywell Inc. | GaAs SCFL RAM |
| US5099148A (en) * | 1990-10-22 | 1992-03-24 | Sgs-Thomson Microelectronics, Inc. | Integrated circuit having multiple data outputs sharing a resistor network |
| JP3270801B2 (ja) * | 1995-04-11 | 2002-04-02 | 富士通株式会社 | アッテネータユニット及びこれを有するステップアッテネータ並びにステップアッテネータを有する電子機器 |
| WO2016172267A1 (en) * | 2015-04-20 | 2016-10-27 | Lockheed Martin Corporation | APPARATUS AND METHOD FOR SELF BIAS IN GALLIUM NITRIDE (GaN) AMPLIFIERS |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4038563A (en) * | 1975-10-03 | 1977-07-26 | Mcdonnell Douglas Corporation | Symmetrical input nor/nand gate circuit |
| US4417162A (en) * | 1979-01-11 | 1983-11-22 | Bell Telephone Laboratories, Incorporated | Tri-state logic buffer circuit |
| FR2483146A1 (fr) * | 1980-05-23 | 1981-11-27 | Thomson Csf | Operateur logique rapide, a grande entrance, a fonction logique complexe, utilisant au moins un transistor a effet de champ a faible tension de seuil |
| US4405870A (en) * | 1980-12-10 | 1983-09-20 | Rockwell International Corporation | Schottky diode-diode field effect transistor logic |
-
1981
- 1981-12-26 JP JP56214911A patent/JPS58114528A/ja active Granted
-
1982
- 1982-12-15 US US06/449,997 patent/US4518871A/en not_active Expired - Lifetime
- 1982-12-17 DE DE8282306768T patent/DE3274040D1/de not_active Expired
- 1982-12-17 EP EP82306768A patent/EP0083181B1/en not_active Expired
- 1982-12-24 CA CA000418567A patent/CA1189579A/en not_active Expired
Non-Patent Citations (1)
| Title |
|---|
| IEEE TRANSACTION ON ELECTRON DEVICES=1978 * |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0083181B1 (en) | 1986-10-29 |
| CA1189579A (en) | 1985-06-25 |
| EP0083181A2 (en) | 1983-07-06 |
| DE3274040D1 (en) | 1986-12-04 |
| EP0083181A3 (en) | 1984-08-01 |
| JPH0421371B2 (cg-RX-API-DMAC7.html) | 1992-04-09 |
| US4518871A (en) | 1985-05-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS58114528A (ja) | GaAs論理集積回路 | |
| US4028556A (en) | High-speed, low consumption integrated logic circuit | |
| US4423339A (en) | Majority logic gate | |
| JPH027537B2 (cg-RX-API-DMAC7.html) | ||
| KR950006352B1 (ko) | 정류성 전송 게이트와 그 응용회로 | |
| US4798979A (en) | Schottky diode logic for E-mode FET/D-mode FET VLSI circuits | |
| EP0084844A1 (en) | FET circuits | |
| EP0207429A2 (en) | Input circuit for FET logic | |
| JPS61222250A (ja) | GaAsゲ−トアレイ集積回路 | |
| JPH02216912A (ja) | 3―5族技術に適当なソース フォロワー電界効果形論理ゲート(sffl) | |
| EP0170134A1 (en) | Schottky diode field effect transistor logic circuit | |
| EP0074604B1 (en) | Circuit utilizing josephson effect | |
| US3125674A (en) | Full binary adder including negative resistance diode | |
| EP0425063B1 (en) | MESFET logic circuit operable over a wide temperature range | |
| US5004938A (en) | MOS analog NOR amplifier and current source therefor | |
| JPH02182029A (ja) | 半導体装置 | |
| US11483003B2 (en) | Pseudo-complementary logic network | |
| JP2524686B2 (ja) | GaAs論理回路装置 | |
| JPS58103232A (ja) | インバ−タ回路 | |
| JPS6155788B2 (cg-RX-API-DMAC7.html) | ||
| JPH0472914A (ja) | 電界効果トランジスタ回路 | |
| JPH07131329A (ja) | 出力バッファ | |
| JPS6160013A (ja) | 論理回路 | |
| JPS63246926A (ja) | 論理集積回路装置 | |
| JP2735338B2 (ja) | 化合物半導体ガリウムひ素集積回路 |