JPS58111178A - 磁気バブル記憶素子 - Google Patents
磁気バブル記憶素子Info
- Publication number
- JPS58111178A JPS58111178A JP56208780A JP20878081A JPS58111178A JP S58111178 A JPS58111178 A JP S58111178A JP 56208780 A JP56208780 A JP 56208780A JP 20878081 A JP20878081 A JP 20878081A JP S58111178 A JPS58111178 A JP S58111178A
- Authority
- JP
- Japan
- Prior art keywords
- minor
- bubble
- generator
- seed
- minor loop
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000003860 storage Methods 0.000 claims description 15
- 230000007547 defect Effects 0.000 abstract description 27
- 230000002950 deficient Effects 0.000 abstract description 16
- 239000000284 extract Substances 0.000 abstract description 4
- 230000000873 masking effect Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 241001347978 Major minor Species 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 238000000605 extraction Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- OZFAFGSSMRRTDW-UHFFFAOYSA-N (2,4-dichlorophenyl) benzenesulfonate Chemical compound ClC1=CC(Cl)=CC=C1OS(=O)(=O)C1=CC=CC=C1 OZFAFGSSMRRTDW-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0875—Organisation of a plurality of magnetic shift registers
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56208780A JPS58111178A (ja) | 1981-12-23 | 1981-12-23 | 磁気バブル記憶素子 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56208780A JPS58111178A (ja) | 1981-12-23 | 1981-12-23 | 磁気バブル記憶素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58111178A true JPS58111178A (ja) | 1983-07-02 |
JPS6137701B2 JPS6137701B2 (enrdf_load_stackoverflow) | 1986-08-25 |
Family
ID=16561970
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56208780A Granted JPS58111178A (ja) | 1981-12-23 | 1981-12-23 | 磁気バブル記憶素子 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58111178A (enrdf_load_stackoverflow) |
-
1981
- 1981-12-23 JP JP56208780A patent/JPS58111178A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6137701B2 (enrdf_load_stackoverflow) | 1986-08-25 |
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