JPS58111040A - フォトレジストプロセスにおける露光量決定方法 - Google Patents

フォトレジストプロセスにおける露光量決定方法

Info

Publication number
JPS58111040A
JPS58111040A JP56209152A JP20915281A JPS58111040A JP S58111040 A JPS58111040 A JP S58111040A JP 56209152 A JP56209152 A JP 56209152A JP 20915281 A JP20915281 A JP 20915281A JP S58111040 A JPS58111040 A JP S58111040A
Authority
JP
Japan
Prior art keywords
resist
exposure
energy
exposure energy
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56209152A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0346968B2 (cs
Inventor
Tetsuo Ito
伊藤　鉄男
Masaya Tanuma
田沼　正也
Yasuo Morooka
泰男 諸岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56209152A priority Critical patent/JPS58111040A/ja
Publication of JPS58111040A publication Critical patent/JPS58111040A/ja
Publication of JPH0346968B2 publication Critical patent/JPH0346968B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP56209152A 1981-12-25 1981-12-25 フォトレジストプロセスにおける露光量決定方法 Granted JPS58111040A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56209152A JPS58111040A (ja) 1981-12-25 1981-12-25 フォトレジストプロセスにおける露光量決定方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56209152A JPS58111040A (ja) 1981-12-25 1981-12-25 フォトレジストプロセスにおける露光量決定方法

Publications (2)

Publication Number Publication Date
JPS58111040A true JPS58111040A (ja) 1983-07-01
JPH0346968B2 JPH0346968B2 (cs) 1991-07-17

Family

ID=16568169

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56209152A Granted JPS58111040A (ja) 1981-12-25 1981-12-25 フォトレジストプロセスにおける露光量決定方法

Country Status (1)

Country Link
JP (1) JPS58111040A (cs)

Also Published As

Publication number Publication date
JPH0346968B2 (cs) 1991-07-17

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