JPS58110487A - Preventing device for transverse movement of pulling shaft in pulling machine for semiconductor - Google Patents

Preventing device for transverse movement of pulling shaft in pulling machine for semiconductor

Info

Publication number
JPS58110487A
JPS58110487A JP20583381A JP20583381A JPS58110487A JP S58110487 A JPS58110487 A JP S58110487A JP 20583381 A JP20583381 A JP 20583381A JP 20583381 A JP20583381 A JP 20583381A JP S58110487 A JPS58110487 A JP S58110487A
Authority
JP
Japan
Prior art keywords
pulling
guides
shaft
pulling shaft
guide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20583381A
Other languages
Japanese (ja)
Inventor
Takao Takahashi
孝夫 高橋
Shingo Hayashi
信吾 林
Hisataka Sugiyama
杉山 久嵩
Yoshiaki Tada
多田 嘉明
Toshio Oishi
大石 俊夫
Kazumoto Honma
本間 一元
Asaji Kawanabe
川鍋 朝治
Hitoshi Hasebe
長谷部 等
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Shibaura Machine Co Ltd
Original Assignee
Toshiba Machine Co Ltd
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Machine Co Ltd, Toshiba Ceramics Co Ltd filed Critical Toshiba Machine Co Ltd
Priority to JP20583381A priority Critical patent/JPS58110487A/en
Publication of JPS58110487A publication Critical patent/JPS58110487A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30Mechanisms for rotating or moving either the melt or the crystal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To stably rotate a pulling shaft and to carry out satisfactory pulling by providing guides which enclose the shaft in a rotatable state and can be attached to and detached from the shaft and a guide releasing means to separate the guides. CONSTITUTION:At the beginning of pulling, a gude opening and shutting plate 30 is set at the lowest position. At this time, narrow parts 31, 32, 33 are positioned among guides 26a, 26b, 27a, 27b, 28a, 28b. The guides are shut by means of springs 29, and by pressing the guides against the narrow part of the plate 30 by the spring force, the guides are held at positions which are symmetrical with respect to a pulling shaft 19. The shut guides are slightly opened by hand against the springs 29, and rings 42 are put in the recessed parts 43 and grasped. A seed 22 is then brought into contact with a melt 12 in a crucible 11, and by rotating a frame 15 by a motor 17, the pulling shaft 19 is rotated to grow a single crystal ingot 13. The transverse movement of the shaft 19 is prevented by the guides through the rings 42.

Description

【発明の詳細な説明】 本発明は、チョクラルス中−法による一半導体引上機に
係り、特に引上軸としてワイヤまたはビードチェーンな
どの可とり性材料を用いた屯のの引上軸の横振れ防止装
置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor pulling machine using the Czochralz medium method, and particularly to a pulling machine that uses a flexible material such as a wire or a bead chain as the pulling shaft. This invention relates to an anti-shake device.

半導体引上機は、引上げられた単結晶インゴットの酸素
濃度および比抵抗の分布特性を十分満足させるため、引
上軸を所定速度で回転させる必要がある。ところが、前
記のように可とり性材料の引上軸を用いた場合は、引上
軸の回転が引上軸の長さによる固有振動数に影響され、
ある回転数の範囲で共振を起こして慣振れを生ずる驚め
、所望の回転数まで上げることができない欠点があった
The semiconductor pulling machine needs to rotate the pulling shaft at a predetermined speed in order to fully satisfy the oxygen concentration and resistivity distribution characteristics of the pulled single crystal ingot. However, when a pulling shaft made of a removable material is used as described above, the rotation of the pulling shaft is affected by the natural frequency due to the length of the pulling shaft.
There were drawbacks such as resonance occurring within a certain range of rotational speeds, resulting in run-in vibration, and the inability to increase the rotational speed to a desired level.

本発明は、前述したような欠点を解決し、可とり性材料
からなる引上軸の共振などによる横振れを小さく押え、
所望の速度で安定した回転を行なわせ、良好な引上げを
行ない得るようにした半導体引上機における引上軸横振
れ防止装置を提供するにある。
The present invention solves the above-mentioned drawbacks, suppresses lateral vibration caused by resonance of a pulling shaft made of a flexible material, and
It is an object of the present invention to provide a pulling shaft lateral vibration prevention device in a semiconductor pulling machine that allows stable rotation at a desired speed and good pulling.

以下、本発明の一実施例を示す第1図ないし第5図につ
いて説明する。第1図におhて、10は引上機本体で、
書間可能な構造になされ、下部はルツボ11および図示
しない加熱装置などを内蔵した加熱チャンバ10 mを
形成し、上部はルツボ11内の融液12から単結晶イン
=rット13を引上げる丸めの引上チャンバ10 bを
形成している0本体10の上部には、巻上装置14が取
付けられている0巻上装置14のフレーム15はそれ自
身が前記本体10に回転可能に取付けられ、その下部に
固着され九グー916により、引上軸回転モータ1rか
らベルト18により回転を与えられるようKなっている
。前記フレーム15にはワイヤオ九はビードチェーンな
どの可とり性を有する引上軸1gを巻上げるための巻上
ドラム20が設けられ、引上モータ21にて回転を与え
られるようになっている。
1 to 5 showing one embodiment of the present invention will be described below. In Fig. 1 h, 10 is the main body of the pulling machine;
The lower part forms a heating chamber 10m containing a crucible 11 and a heating device (not shown), and the upper part pulls a single crystal inlet 13 from the melt 12 in the crucible 11. A hoisting device 14 is attached to the upper part of the body 10 forming the rounded lifting chamber 10b.A frame 15 of the hoisting device 14 is itself rotatably attached to said body 10. , is configured so that rotation can be applied by the belt 18 from the pulling shaft rotating motor 1r by means of a nine-piece 916 fixed to the lower part thereof. The frame 15 is provided with a hoisting drum 20 for hoisting a pull-up shaft 1g such as a wire bead chain, which is rotated by a hoisting motor 21.

引上軸19の下端にはシード22を申付は走シードチャ
ック23が取付けられており、該引上軸19の上端側は
フレーム15に設けた固定ガイド24により垂下位置を
定められている。
A seed chuck 23 for transferring seeds 22 is attached to the lower end of the pulling shaft 19, and the hanging position of the upper end of the pulling shaft 19 is determined by a fixed guide 24 provided on the frame 15.

引上チャンバ10 b内には、引上軸19と平行に軸2
5が取付けられている。この軸25には、第2図および
第3図に示すような対をなすガイド26as 26b、
およびこれと同様のガイド27m、27b、28a、2
8bが複数組重付けられている。各々のガイド26m、
26b等は軸25に互いに旋回可能に取付けられ、バネ
29にて閉じられるようになっている。
Inside the pulling chamber 10b, there is a shaft 2 parallel to the pulling shaft 19.
5 is installed. This shaft 25 has a pair of guides 26as 26b as shown in FIGS. 2 and 3,
and similar guides 27m, 27b, 28a, 2
8b are stacked in multiple sets. Each guide 26m,
26b and the like are attached to the shaft 25 so as to be able to rotate with respect to each other, and are closed by a spring 29.

前記の対をなすガイド26m、26b、21”52rb
ないし28m、28bの関KFi、第4区内に示すよう
なガイド開閉板30が通されている。このガイド開閉板
30は、それぞれのガイド26m、26b等に対応して
狭巾部J L32.33と広巾部34.35.36を有
し、さらにそれぞれの狭巾部31等から広巾部14へ至
る傾斜部37.3B、39からなっており、狭巾部31
.32.33が各ガイド26a126b等の間に位置す
るとき、それぞれのガイド26 m、 26 b等を第
2図に示すように閉じ、広巾部3!、35.31が各ガ
イド261、J6b等の間に位置するとき、それぞれの
ガイド261.26b等を第3図に示すように開くよう
になっている。ガイド開閉板30は、第1図に示すよう
に、シリンダなどの駆動部40に連結され九昇降ロッド
41に連結され、第4区内ないし0に示すように、4位
置に定められるようになっている。しかして、前記狭巾
部3ハ32.33と広巾部34.35.311Fi、ガ
イド開閉板30が第4区内の位置にあるとき、すべての
ガイド26m、26b等を閉じ、@4図IB) 、 (
C) 、(I)と順次上昇するに従って下方のガイド2
6畠、2εbから順次開くように配置されている。
Said pair of guides 26m, 26b, 21"52rb
A guide opening/closing plate 30 as shown in the fourth section of Seki KFi of 28 m to 28 b is passed through. This guide opening/closing plate 30 has a narrow width part J L32.33 and a wide width part 34, 35, 36 corresponding to the respective guides 26m, 26b, etc., and further has a narrow width part 32.33 and a wide width part 34, 35. It consists of inclined parts 37.3B and 39 leading to the narrow part 31.
.. 32, 33 are located between the respective guides 26a, 126b, etc., the respective guides 26m, 26b, etc. are closed as shown in FIG. 2, and the wide portion 3! , 35.31 are positioned between the respective guides 261, J6b, etc., the respective guides 261.26b, etc. are opened as shown in FIG. As shown in FIG. 1, the guide opening/closing plate 30 is connected to a driving part 40 such as a cylinder and connected to a nine lifting rod 41, and can be set at four positions as shown in the fourth section and zero. ing. Therefore, when the narrow width portion 3H 32.33, the wide width portion 34.35.311Fi, and the guide opening/closing plate 30 are in the position within the fourth section, all the guides 26m, 26b, etc. are closed, @Figure 4 IB ), (
C), (I) and downward guide 2 as it rises sequentially.
They are arranged to open sequentially starting from 6th field and 2εb.

各々のガイド217m、job等は、前記のように閉じ
九とき、引上軸19に係合されているリンダ42を先端
の凹部43(第3図参照)で把持し、開い九ときには、
引上げられてくる単結晶インゴット13に干渉しないよ
うに、第3図に示す如く引上軸19から十分遠ざかるよ
うになされている。なお、ガイド26a、jib等は、
ガイド開閉板30を引上軸19と軸25を結ぶ直線上に
位置させることにより、引上軸19に対して対称的な位
置に保たれつつ開閉し、リンゲイ2を引上軸19に対し
て同心上に保持し得るようになっている。
As described above, each guide 217m, job, etc., when closed, grips the cylinder 42, which is engaged with the pulling shaft 19, with the concave portion 43 (see FIG. 3) at the tip, and when opened,
In order not to interfere with the single crystal ingot 13 being pulled up, it is made to be sufficiently far away from the pulling shaft 19 as shown in FIG. Note that the guide 26a, jib, etc.
By positioning the guide opening/closing plate 30 on the straight line connecting the pulling shaft 19 and the shaft 25, it can be opened and closed while being maintained in a symmetrical position with respect to the pulling shaft 19, and the ringay 2 can be opened and closed with respect to the pulling shaft 19. It can be held concentrically.

リング42は、引−ヒ軸19に対しわずかなすき間を置
いて回転自在に係合されると共に、引上軸19に沿って
移動自在に係合されている。
The ring 42 is rotatably engaged with the pulling shaft 19 with a slight gap, and is also movably engaged along the pulling shaft 19.

次いで本装置の作用について説明する。引上開始時には
、ガイド開閉板30をf$4図囚区内す最下位置に置く
。このとき、ガイド261.26b、27a、27bお
よび28息、211bの間には狭巾部31.32.33
が位置し、これらのガイド26&、26b等をバネ29
にて閉じると共に、このパネカにてガイド26a126
b等を前記ガイド開閉板30の狭巾部1ハsz、ssに
押圧してこれらのガイド26a126b等を引上軸J9
に対して対称の位置に保持する。前記のように閉じられ
ているガイド26m、26b等をバネ29に抗して手で
若干開き、引上軸19にあらかじめ係合されているリン
グ42を凹部43内に入れて把持する。
Next, the operation of this device will be explained. When starting to pull up, the guide opening/closing plate 30 is placed at the lowest position in the f$4 prisoner area. At this time, there is a narrow part 31.32.33 between the guides 261.26b, 27a, 27b and 28, 211b.
are located, and these guides 26&, 26b, etc. are connected to the spring 29
At the same time as closing the guide 26a126 at this panel
b, etc. to the narrow width portion 1h sz, ss of the guide opening/closing plate 30, and pull up these guides 26a, 126b, etc. to the lifting shaft J9.
Hold it in a symmetrical position. The guides 26m, 26b, etc., which have been closed as described above, are slightly opened by hand against the spring 29, and the ring 42, which has been previously engaged with the pulling shaft 19, is inserted into the recess 43 and gripped.

次いで、シード22をルツボ11内の融液12に接触さ
せ、引上軸回転モータ17によりフレーム15を回転さ
せて引上軸19を回転させ、単結晶インゴット1sを育
成していく、このとき、引上軸19は、各々のリング4
2を介してガイド26m、26b等により横振れを防止
される。
Next, the seed 22 is brought into contact with the melt 12 in the crucible 11, and the frame 15 is rotated by the pulling shaft rotation motor 17 to rotate the pulling shaft 19, thereby growing the single crystal ingot 1s. The pulling shaft 19 is connected to each ring 4
Lateral vibration is prevented by guides 26m, 26b, etc. via 2.

なお、引上軸19の共振周波数fは なる式で表わされるが、この(1)式におけるRはガイ
ド26m、26bなどの横振れに対する支緊からシード
チャック731での実際の引上軸19の長さでなく、前
記支点からシードチャック23、シード22および単結
晶インゴット13を含めた重心位置Gまでの距離である
。ただし、(11式におけるgは重力加速度である。
The resonant frequency f of the pulling shaft 19 is expressed by the following equation, and R in this equation (1) is determined by the actual pulling shaft 19 in the seed chuck 731 from the support against lateral vibration of the guides 26m, 26b, etc. It is not the length, but the distance from the fulcrum to the center of gravity position G including the seed chuck 23, seed 22, and single crystal ingot 13. However, (g in equation 11 is the gravitational acceleration.

そこで、前記のようなガイド26鳳、26b等がなく、
単に上端の固定ガイド24のみで引上軸19を保持した
場合には、前記lは引上げ開始時には最も長く、引上げ
が進むに連れて次第に短かぐなっていくため、前記共振
周波数fに相当する引上軸19のt/f8回転数は第5
図に曲線Aで示すようになり、引上げ開始時における回
転数Nmにより非常に低く押えられてしまう。
Therefore, there is no guide 26, 26b, etc. as described above,
When the pulling shaft 19 is simply held by the fixed guide 24 at the upper end, the length l is the longest at the start of pulling and gradually becomes shorter as the pulling progresses, so that the pulling shaft 19 corresponds to the resonant frequency f. The t/f8 rotation speed of the upper shaft 19 is the 5th
As shown by curve A in the figure, the rotational speed Nm at the start of pulling is kept very low.

しかしながら、本装置によれば、最下位置のガイド26
a、26bを融液12の表面に対して比較的近く設置し
ておくことにより、引上げ開始における前記(11式の
1を相当小さくすることができるため、第5図に曲@B
で示すように、引上げ開始時の許容回転数を曲、IAの
場合のN1からN、で示すように大巾に上昇させること
ができる。前記lは引上げが進むに連れて重心位置Gが
上昇するために次第に短かくなり、そのため許容回転数
は前記曲線Bで示すように上昇1 する。
However, according to the present device, the guide 26 at the lowest position
By installing a and 26b relatively close to the surface of the melt 12, 1 in equation 11 can be made considerably smaller at the start of pulling.
As shown in , the allowable rotational speed at the start of pulling can be greatly increased from N1 in the case of IA to N as shown in . The above l becomes gradually shorter as the center of gravity position G rises as the pulling progresses, and therefore the permissible rotational speed increases by 1 as shown by the above curve B.

引上げが進み、シードチャック23がガイド26m、2
6bに近付いたならば、これを図示しない引上長さ検出
装置などの検知手段で検知し、駆動部40を作動させて
、ガイド開閉板30を、第4図■に示すように、距@S
、だけ上昇させる。このガイド開閉板30の上昇により
、ガイド26a% 26bは傾斜部31によりバネ29
に抗して開かれ、広巾部34にて第3図に示すように、
開いた状態に保九れる。このとき、リング42は、その
すぐ下まで上昇してきているシートチャック23上に落
下して保持される。
As the pulling progresses, the seed chuck 23 moves to the guides 26m and 2.
6b, this is detected by a detection means such as a pull-up length detection device (not shown), and the drive unit 40 is operated to move the guide opening/closing plate 30 to the distance @ S
, only to rise. As the guide opening/closing plate 30 rises, the guides 26a and 26b are caused to spring 29 by the inclined portion 31.
As shown in FIG.
It is kept open. At this time, the ring 42 falls onto the sheet chuck 23, which has risen to just below it, and is held there.

このようにガイド26m、26bが開くと、引上軸19
はその上に位置するガイド27a。
When the guides 26m and 26b open in this way, the pulling shaft 19
is the guide 27a located above it.

2rbにて保持されることになる。そこで、C11式の
1は長くな9、このため、許容回転数は、曲線B上のN
、で示すように所定量低下する。
It will be held at 2rb. Therefore, 1 in formula C11 is long 9, so the allowable rotation speed is N on curve B.
, it decreases by a predetermined amount as shown by .

このとき、シードチャック23に対して重心位1i11
Gが引上げ開始時より下方へ移動している恵め、ガイド
21m、21bからり一ドチャック21までの距離を、
仮りに引上げ開始時のガイド26a126bからシード
チャック23までの距離と等しく定めても、直は引上げ
開始時より長くなり、このため前記許容回転数N、はN
At this time, the center of gravity is located at 1i11 with respect to the seed chuck 23.
The distance from the guides 21m and 21b to the rear chuck 21, where G is moving downward from when the pulling started, is
Even if the distance is set equal to the distance from the guide 26a126b to the seed chuck 23 at the start of pulling, the distance will be longer than at the start of pulling, and therefore the allowable rotation speed N is
.

より若干低下する。slightly lower.

シードチャック23および嚇結晶インゴット13は、引
上げが進むに連れてさらに上昇するが、最下位置のガイ
ド26m、26bは前記のように開かれているため、こ
れらに干渉することなく引上げられていく。
The seed chuck 23 and the black crystal ingot 13 rise further as the pulling progresses, but since the guides 26m and 26b at the lowest positions are opened as described above, they are pulled up without interfering with them. .

こうして、シードチャック23が中段のガイド27m、
21bに近付くと、ガイド開閉板30が駆動部40によ
り第4図(Qに示すように、最下位置から距離S、だけ
上方の位置へ移動し、これらのガイド27m、27bを
傾斜部38と広巾部35により開く。以下同様にしてシ
ードチャック23が最上段のガイド2Bm、21bに近
付くと、ガイド開閉板30が第4図0に示すように距離
S、tで上昇し同ガイド28a128b′It傾斜部3
9と広巾部36にて開き、引上軸19を1熾まで引上げ
可能にする。
In this way, the seed chuck 23 is placed in the middle guide 27m,
21b, the guide opening/closing plate 30 is moved by the drive unit 40 to a position a distance S above the lowest position as shown in FIG. It opens by the wide part 35. Similarly, when the seed chuck 23 approaches the uppermost guides 2Bm and 21b, the guide opening/closing plate 30 rises by distances S and t as shown in FIG. Inclined part 3
9 and the wide portion 36, allowing the pulling shaft 19 to be pulled up to 1 height.

そこで、本装置によれば、前記ガイド261、xsbな
どの間隔Cを適宜に定めて複数個設置することによ抄、
前記倉を引上長さに関係なく、十分短かく押えることが
でき、この1によって定まる引上軸19の共握周波数を
大巾にアップさせることができる。このため、引上軸1
90回転数を十分為〈とることが可能となり、育成され
る単結晶インゴット13の陵素Il&度および比抵抗の
分布特性を満足させるなどの引上条件に最も好しh引上
げが行なえる。
Therefore, according to the present device, by installing a plurality of guides 261, xsb, etc. with an appropriately determined interval C, papermaking,
The hold can be held sufficiently short regardless of the lifting length, and the common gripping frequency of the lifting shaft 19 determined by this 1 can be greatly increased. For this reason, the pulling shaft 1
It becomes possible to maintain a sufficient number of rotations of 90 rotations, and pulling can be carried out most preferably for the pulling conditions such as satisfying the distribution characteristics of the crystallinity and resistivity of the single crystal ingot 13 to be grown.

前述した実施例は、引上軸19にあらかじめ係合された
リング42を介して引上軸19をガイド1tia、xt
tb等によ)間接的にガイドするようにし先例を示し虎
が、ガイド2#麿、Jgb等にて直接引上軸19を包囲
するようにしてもよく、まえ、ガイドsea、 Jgb
等の開閉は、図示のようなガイド開閉板3oによらず公
知の種々の駆動手段を採用でき、さらにガイドは図示の
ような対称的な開閉方式のものによらず、引上軸19に
対して係脱可能でかつ引上軸19から遠ざけ得るもので
あればよh等、種々変更し得ることは言うまで本ない。
In the embodiment described above, the pulling shaft 19 is guided through the ring 42 which is previously engaged with the pulling shaft 19.
tb, etc.) to show a precedent, guides 2 #maro, Jgb, etc. may be used to directly surround the pulling shaft 19;
For opening and closing, various known driving means can be used instead of using the guide opening/closing plate 3o as shown in the figure.Furthermore, the guide is not dependent on the symmetrical opening/closing method as shown in the figure, but can be opened and closed with respect to the pulling shaft 19. It goes without saying that various modifications can be made, such as providing a device that can be engaged and detached from the pull-up shaft 19 and moved away from the pulling shaft 19.

以上述べ友ように本発明によれば、可とう性材料からな
る引上軸の共振などによる横振れを引上開始時から終了
時までのすべての間においてより小さく押えることがで
き、引上軸を所望の速度で安定して回転させることがで
きる九め、良好な引上げを行な一部ると共に、各ガイド
は所定の位置にて開閉するのみであるため、引上機の高
さを高くする必要もない埠の効果が得られる。
As described above, according to the present invention, it is possible to suppress the lateral vibration of the pulling shaft made of a flexible material due to resonance etc. to a smaller extent throughout the period from the start of pulling to the end of pulling. In addition to being able to stably rotate the machine at the desired speed and perform good pulling, each guide only opens and closes at a predetermined position, so the height of the pulling machine can be increased. You can get the effect of a bun without having to do it.

【図面の簡単な説明】[Brief explanation of the drawing]

fa1図は本発明の一実施例を示す一部破断概暑図、第
2図は第1図の1−1線による部分拡大断面図、第3図
は第2図に示すガイドが開い次状態を示°を断面図、第
4回置ないし0はガイド開閉板およびそれとガイドとの
相対的位置関係の変化を示す図、第5図は引上長さと引
上軸の許容回転数との関係を示す曲線図である。 IO・・・引上機本体、10 m・・・加熱チャンバ、
IOb・・・引上チしパ、11・・・ルツボ、13・・
・単結晶インゴット、14・・・巻上装置、19・・・
引上軸、22・・・シード%23・・・シードチャック
、25・・・軸、26a、J6b、 271.27b、
jt8ah2ab・・・ガイド、29・・・バネ、3o
・・・ガイド開閉板、40・・・駆動部、41・・・昇
降ロッド。 出願人代理人  弁理士 鈴 江 武 彦jlI1図 第41I (A)    (B)    (C)    (D)1
51f 引J−!にセ − 第1頁の続き 0発 明 者 用鍋朝治 山形県西置賜郡小国町大字小国 町378東芝セラミック株式会社 小国製造所内 0発 明 者 長谷部等 山形県西置賜郡小国町大字小国 町り78東芝セラミックス株式会 社小国製造所内 ■出 願 人 東芝セラミックス株式会社東京都新宿区
西新宿1丁目26番 2号
Figure fa1 is a partially cutaway schematic diagram showing one embodiment of the present invention, Figure 2 is a partially enlarged sectional view taken along line 1-1 in Figure 1, and Figure 3 is a state in which the guide shown in Figure 2 is open. Figure 5 shows the relationship between the pulling length and the permissible rotational speed of the pulling shaft. FIG. IO...pulling machine main body, 10 m...heating chamber,
IOb...lifting chip, 11...crucible, 13...
・Single crystal ingot, 14... winding device, 19...
Pulling shaft, 22... Seed% 23... Seed chuck, 25... Axis, 26a, J6b, 271.27b,
jt8ah2ab...Guide, 29...Spring, 3o
...Guide opening/closing plate, 40...Drive unit, 41...Elevating rod. Applicant's agent Patent attorney Suzue TakehikoJI1 Figure 41I (A) (B) (C) (D) 1
51f Pull J-! - Continued from page 10 Inventor Asaji Yonabe 378 Oguni-cho, Oguni-machi, Nishiokitama-gun, Yamagata Prefecture Oguni-cho, Toshiba Ceramic Corporation 0 Inventor Toshiba Hasebe 78 Oguni-cho, Oguni-machi, Nishiokitama-gun, Yamagata Prefecture Toshiba Ceramics Co., Ltd. Oguni Factory ■Applicant: Toshiba Ceramics Co., Ltd. 1-26-2 Nishi-Shinjuku, Shinjuku-ku, Tokyo

Claims (1)

【特許請求の範囲】 (11可とう性材料を引上軸として用いる半導体引上機
において、引上軸に沿って複数個配置され、同引上軸を
直接または間接的に回転可能に包囲すると共に同引上軸
に対して係脱可能に設けられたガイドと、引上軸の引上
げに従って下方に位置するガイドから順次同ガイドを引
上軸から離脱させて遠ざけるガイド逃がし手段とを真備
することを特徴とする半導体引上機における引上軸横振
れ防止装置。 (21ガイドが、引上軸に対して対称的に開閉可能に形
成されている特許請求の範囲第1項記載の半導体引上機
における引上軸横振れ防止装置。
[Claims] (11) In a semiconductor pulling machine using a flexible material as a pulling shaft, a plurality of semiconductor pulling machines are arranged along the pulling shaft and rotatably surround the pulling shaft directly or indirectly. In addition, a guide is provided to be detachably connected to the pulling shaft, and a guide releasing means is provided for sequentially disengaging the guide from the lower guide as the pulling shaft is pulled up and away from the pulling shaft. A device for preventing lateral vibration of a pulling shaft in a semiconductor pulling machine, characterized in that the guide 21 is formed to be able to open and close symmetrically with respect to the pulling shaft. A device to prevent horizontal vibration of the pulling shaft in a machine.
JP20583381A 1981-12-19 1981-12-19 Preventing device for transverse movement of pulling shaft in pulling machine for semiconductor Pending JPS58110487A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20583381A JPS58110487A (en) 1981-12-19 1981-12-19 Preventing device for transverse movement of pulling shaft in pulling machine for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20583381A JPS58110487A (en) 1981-12-19 1981-12-19 Preventing device for transverse movement of pulling shaft in pulling machine for semiconductor

Publications (1)

Publication Number Publication Date
JPS58110487A true JPS58110487A (en) 1983-07-01

Family

ID=16513463

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20583381A Pending JPS58110487A (en) 1981-12-19 1981-12-19 Preventing device for transverse movement of pulling shaft in pulling machine for semiconductor

Country Status (1)

Country Link
JP (1) JPS58110487A (en)

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