JPH0232689Y2 - - Google Patents

Info

Publication number
JPH0232689Y2
JPH0232689Y2 JP18912385U JP18912385U JPH0232689Y2 JP H0232689 Y2 JPH0232689 Y2 JP H0232689Y2 JP 18912385 U JP18912385 U JP 18912385U JP 18912385 U JP18912385 U JP 18912385U JP H0232689 Y2 JPH0232689 Y2 JP H0232689Y2
Authority
JP
Japan
Prior art keywords
pulling
friction plate
pulling shaft
single crystal
shaft
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP18912385U
Other languages
Japanese (ja)
Other versions
JPS6297183U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP18912385U priority Critical patent/JPH0232689Y2/ja
Publication of JPS6297183U publication Critical patent/JPS6297183U/ja
Application granted granted Critical
Publication of JPH0232689Y2 publication Critical patent/JPH0232689Y2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Description

【考案の詳細な説明】 (考案の属する技術分野) 本考案はCZ法によつてSiなどの単結晶を製造
する装置、すなわち単結晶引上装置の特に引上軸
の回転振れ防止装置の改良に関するものである。
[Detailed description of the invention] (Technical field to which the invention pertains) The invention is directed to an apparatus for manufacturing single crystals such as Si by the CZ method, specifically a device for preventing rotational vibration of a pulling shaft of a single crystal pulling apparatus. It is about improvement.

(従来の装置) 従来の単結晶引上装置においては、種結晶(シ
ード)を回転させながら上下方向に移動可能とし
たシード引上軸に、可撓性のある材料、例えばワ
イヤまたはチエーンを用いて装置の高さを抑制す
る方法が用いられる場合があるが、このような装
置ではシードの回転や外部振動などによるシード
回転振れを生じて完全な単結晶の製造が困難な場
合がある。
(Conventional Device) In a conventional single crystal pulling device, a flexible material such as a wire or chain is used for the seed pulling shaft, which allows the seed crystal to move vertically while rotating. In some cases, a method is used to suppress the height of the device, but in such a device, it may be difficult to produce a perfect single crystal due to seed rotational vibration due to seed rotation or external vibration.

この解決には本考案者が提案した摩擦を利用し
た回転振れ防止装置がある。第3図はこの装置を
利用した一例を示す単結晶引上装置の構造例図
で、図中の21は炉体、22はシード、23は単
結晶、24はるつぼ、25は引上軸、26は支持
台、27はガイド、28は摩擦板である。しかし
この26〜28による回転振れ防止装置の効果を
有効に発揮させるには、引上軸25に対する上下
方向の取付位置の選定が重要で、一般にはなるべ
く引上軸の下端に近い方が有利である。実験によ
れば引上軸上端より約400mm以上下方に取付けた
場合に有効であつた。このような回転振れ防止装
置の欠点は、 1 引上軸上端より回転振れ防止装置の取付位置
までの寸法分が、防止装置を用いない場合に比
べて引上装置の全高を高くすることが必要な原
因となる。これは引上軸に可撓性材料を用いる
目的に反し効果はない。
To solve this problem, there is a rotational shake prevention device that uses friction, proposed by the present inventor. FIG. 3 is a structural example diagram of a single crystal pulling device showing an example of using this device. In the figure, 21 is a furnace body, 22 is a seed, 23 is a single crystal, 24 is a crucible, 25 is a pulling shaft, 26 is a support stand, 27 is a guide, and 28 is a friction plate. However, in order to effectively utilize the effect of the rotational shake prevention device 26 to 28, it is important to select the mounting position in the vertical direction with respect to the pulling shaft 25. Generally, it is advantageous to select a mounting position as close to the lower end of the pulling shaft as possible. be. According to experiments, it was effective when installed approximately 400 mm or more below the upper end of the pulling shaft. The disadvantages of such a rotational shake prevention device are: 1. The total height of the lifting device must be higher than when no prevention device is used due to the dimension from the upper end of the pulling shaft to the installation position of the rotational shake prevention device. cause This goes against the purpose of using a flexible material for the pulling shaft and has no effect.

2 引上装置の全高を従来の装置と同一にするに
は、回転振れ防止装置を引上軸の上下移動に合
わせて独立に上下させるメカニズムを設けるこ
とが必要となるが、このため単結晶引上装置の
構成が複雑となり、かつ引上炉内の雰囲気を汚
染する可能性を増すという欠点がある。
2 In order to make the overall height of the pulling device the same as that of conventional devices, it is necessary to provide a mechanism to move the rotational shake prevention device up and down independently in accordance with the vertical movement of the pulling shaft. There are disadvantages in that the structure of the upper apparatus becomes complicated and the possibility of contaminating the atmosphere inside the pulling furnace increases.

(考案の具体的な目的) 本考案はCZ法によつて単結晶を製造する装置
の引上軸に可撓性材料を用いた場合に、回転振れ
を生じた時これを直ちに減衰させる回転振れ防止
装置を、単結晶引上装置の全高の増加および引上
軸移動のストロークの減少等の欠点を伴うことな
く、または防止装置を上下に移動させるメカニズ
ムを追加するなどのことを行わずに装着可能とす
ることを目的としている。
(Specific purpose of the invention) This invention aims to immediately attenuate rotational vibration when a flexible material is used for the pulling shaft of an apparatus for producing single crystals by the CZ method. The preventer can be installed without disadvantages such as an increase in the overall height of the single crystal pulling device and a reduction in the stroke of the pulling axis movement, or without adding a mechanism to move the preventer up and down. It is intended to make it possible.

(考案の構成と動作) 第1図および第2図は本考案を実施した単結晶
引上装置の構成例図で、第1図は単結晶引上げ途
中の状態、第2図は単結晶引上終了時の状態をそ
れぞれ示している。これらの図において1は引上
装置の上部チヤンバ、2はシードチヤツク、3は
引上中の結晶、4はるつぼ、5は引上軸、6は引
上軸支持具、7は移動摩擦板、8は固定摩擦板、
9は引上軸5の上下移動と回転を与える機構で駆
動源を含んでいる。
(Structure and operation of the invention) Figures 1 and 2 are diagrams showing an example of the configuration of a single crystal pulling apparatus in which the invention is implemented. The status at the end of each is shown. In these figures, 1 is the upper chamber of the pulling device, 2 is the seed chuck, 3 is the crystal being pulled, 4 is the crucible, 5 is the pulling shaft, 6 is the pulling shaft support, 7 is the movable friction plate, 8 is a fixed friction plate,
Reference numeral 9 is a mechanism for vertically moving and rotating the pulling shaft 5, and includes a driving source.

本考案の主要部は、単結晶引上装置の炉内を成
長する単結晶を低速度で回転させなばら、かつ回
転振れを防止しながら引上げる機構中の回転振れ
防止装置であつて、引上軸支持具6と移動摩擦板
7および固定摩擦板8より構成される。このうち
引上軸支持具6は、引上軸5に対してはその中心
にこの引上軸を貫通させ、かつ引上軸に沿つて上
下方向に自由に動くように構成され、シードチヤ
ツク2の上昇によりシードチヤツクに押されて共
に上部チヤンバ1内を上昇可能な構造とし、引上
軸5に回転振れを生じた場合にはその水平方向の
動きを移動摩擦板7に伝える。移動摩擦板7には
引上軸支持具6が落下しないように支持する穴が
あけてある。この穴の直径は、シードチヤツク2
が通過可能な大きさとする。この移動摩擦板7は
引上軸5の水平方向の動きに同期して固定摩擦板
8の上面をスライドする。固定摩擦板8は移動摩
擦板7を支持する平板であるが、中心部にはシー
ドチヤツク2が通過可能な穴を設けてある。固定
摩擦板8の固定位置は、引上軸の長さによつて最
適位置が定められるが、一般には上部チヤンバ1
の上端近傍に設けることが多い。なお引上軸支持
具6と移動摩擦板7とは一体に固定された構造と
してもよく、この一体構造体は引上軸5に対して
は上下方向に自由に動くように固定され、シード
チヤツク2の上昇によつてシードチヤツクと共に
上部チヤンバ1内を上昇できる。移動摩擦板7は
固定摩擦板8より必ず上方にあるので8の固定位
置の選定は重要であるが、引上軸5に回転振れを
生じた場合にはその水平方向の動きに同期(追
従)して固定摩擦板8の面上をスライドする。
The main part of the present invention is a rotational shake prevention device in a mechanism for rotating a single crystal growing in a furnace of a single crystal pulling apparatus at a low speed and pulling it up while preventing rotational shake. It is composed of an upper shaft support 6, a movable friction plate 7, and a fixed friction plate 8. Among these, the pulling shaft support 6 is configured so that the pulling shaft passes through the center of the pulling shaft 5 and can freely move up and down along the pulling shaft. It has a structure that can be pushed by the seed chuck as it rises and rise together in the upper chamber 1, and when rotational vibration occurs in the pulling shaft 5, the horizontal movement is transmitted to the movable friction plate 7. The movable friction plate 7 has a hole for supporting the pulling shaft support 6 so that it does not fall. The diameter of this hole is
be large enough to pass through. The movable friction plate 7 slides on the upper surface of the fixed friction plate 8 in synchronization with the horizontal movement of the pulling shaft 5. The fixed friction plate 8 is a flat plate that supports the movable friction plate 7, and has a hole in the center through which the seed chuck 2 can pass. The optimum position for fixing the fixed friction plate 8 is determined depending on the length of the pulling shaft, but generally it is located at the upper chamber 1.
It is often provided near the upper end of the The pulling shaft support 6 and the movable friction plate 7 may be fixed together, and this integral structure is fixed to the pulling shaft 5 so that it can move freely in the vertical direction, and the seed chuck 2 can rise in the upper chamber 1 together with the seed chuck. Since the movable friction plate 7 is always located above the fixed friction plate 8, the selection of the fixed position of the plate 8 is important, but if rotational runout occurs in the pulling shaft 5, it should be synchronized (followed) with its horizontal movement. and slide on the surface of the fixed friction plate 8.

次に回転振れ防止動作を説明する。 Next, the rotational shake prevention operation will be explained.

(1) 結晶引上中の状態は第1図に示す通りで、シ
ードチヤツク2の上端は回転振れ防止装置の下
方にある。引上軸5に回転振れを生じた時、そ
の水平面での動きによく追従して移動摩擦板7
は固定摩擦板8上をスライドし、両者の摩擦に
よつて回転振れは直ちに減衰する。
(1) The state during crystal pulling is as shown in Fig. 1, and the upper end of the seed chuck 2 is below the rotational vibration prevention device. When rotational runout occurs in the pulling shaft 5, the moving friction plate 7 closely follows the movement on the horizontal plane.
slides on the fixed friction plate 8, and the rotational runout is immediately attenuated by the friction between the two.

(2) 結晶引上終了の状態は、例えば第2図のよう
で、シードチヤツク2は上下移動ストロークの
最上部まで上がり、引上げられた結晶3は上部
チヤンバ1内に収納される。このとき引上軸支
持具6(または引上軸支持具6および移動摩擦
板7)はシードチヤツクの上端によつて押上げ
られることによつて上昇し、シードチヤツク2
(またはシードチヤツク2および結晶3)は移
動摩擦板7(または固定摩擦板8)の中央の穴
を通過する。
(2) The state at the end of crystal pulling is as shown in FIG. 2, for example, where the seed chuck 2 rises to the top of the vertical movement stroke and the pulled crystal 3 is stored in the upper chamber 1. At this time, the pulling shaft support 6 (or the pulling shaft support 6 and the movable friction plate 7) rises by being pushed up by the upper end of the seed chuck.
(or seed chuck 2 and crystal 3) passes through the central hole of moving friction plate 7 (or fixed friction plate 8).

(考案の効果) 本考案の実施により結晶引上軸にワイヤ、チエ
ーンなどの可撓性材料を用いた単結晶引上装置に
おいて、生じた回転振れを急速に減衰させること
が容易となり、引上げられた単結晶の品質向上に
著しい効果が得られる。
(Effects of the invention) By implementing the invention, it becomes easy to rapidly damp the rotational vibration that occurs in a single crystal pulling apparatus using a flexible material such as a wire or chain for the crystal pulling shaft, and the pulling This has a significant effect on improving the quality of single crystals.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図および第2図は本考案を実施した単結晶
引上装置の構成例図で、第1図は単結晶引上げ中
の状態、第2図は単結晶引上終了状態を示す。第
3図は従来の回転振れ止めを設けた単結晶引上装
置の構成例図である。 1……上部チヤンバ、2……シードチヤツク、
3,23……引上中の結晶、4,24……るつ
ぼ、5,25……引上軸、6……引上軸支持具、
7……移動摩擦板、8……固定摩擦板、9,29
……引上機構、21……炉体、22……シード、
26……支持台、27……ガイド、28……摩擦
板。
FIGS. 1 and 2 are diagrams showing an example of the configuration of a single crystal pulling apparatus embodying the present invention, with FIG. 1 showing a state in which the single crystal is being pulled, and FIG. 2 showing the state in which the single crystal has been pulled. FIG. 3 is a diagram showing an example of the configuration of a conventional single crystal pulling apparatus provided with a rotational steady rest. 1... Upper chamber, 2... Seed chuck,
3, 23... Crystal being pulled, 4, 24... Crucible, 5, 25... Pulling shaft, 6... Pulling shaft support,
7...Moving friction plate, 8...Fixed friction plate, 9,29
... Pulling mechanism, 21 ... Furnace body, 22 ... Seed,
26...Support stand, 27...Guide, 28...Friction plate.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 引上軸にワイヤやチエーンなどの可撓性材料を
用いた単結晶引上装置の炉内に設ける引上軸の回
転振れ防止装置を、引上軸を中心に貫通させ単結
晶先端のシードチヤツクの上昇を利用して引上軸
に沿つて上下自由に移動可能な引上軸支持具と、
前記支持具を中心に設けられかつ前記シードチヤ
ツクの通過を許す大きさの穴にはめ合わせて保持
すると共に、単結晶引上時に生ずる引上軸の回転
振れに追従して水平方向に移動可能とした移動摩
擦板と、前記炉内上方の最適位置に固着されて中
心に引上軸、シードチヤツクおよび引上げられた
単結晶がいずれも通過可能な穴を有し、前記移動
摩擦板が上面に着座状態にあつて引上軸の回転振
れに伴つて水平移動するとき、これに摩擦抵抗を
与える固定摩擦板にて構成したことを特徴とする
単結晶引上装置。
A device for preventing rotational vibration of the pulling shaft installed in the furnace of a single crystal pulling apparatus using a flexible material such as a wire or chain for the pulling shaft is passed through the pulling shaft to prevent the seed chuck at the tip of the single crystal. a lifting shaft support that can be freely moved up and down along the lifting shaft using the lift;
The supporting tool is fitted into a hole provided at the center and is large enough to allow the seed chuck to pass through, and is held, and is movable in the horizontal direction following the rotational vibration of the pulling shaft that occurs when pulling a single crystal. A movable friction plate is fixed at an optimal position above the furnace and has a hole in the center through which the seed chuck and the pulled single crystal can pass, and the movable friction plate is seated on the upper surface. 1. A single-crystal pulling device comprising a fixed friction plate that provides frictional resistance when the device moves horizontally with the rotational deflection of a pulling shaft.
JP18912385U 1985-12-10 1985-12-10 Expired JPH0232689Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18912385U JPH0232689Y2 (en) 1985-12-10 1985-12-10

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18912385U JPH0232689Y2 (en) 1985-12-10 1985-12-10

Publications (2)

Publication Number Publication Date
JPS6297183U JPS6297183U (en) 1987-06-20
JPH0232689Y2 true JPH0232689Y2 (en) 1990-09-04

Family

ID=31141133

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18912385U Expired JPH0232689Y2 (en) 1985-12-10 1985-12-10

Country Status (1)

Country Link
JP (1) JPH0232689Y2 (en)

Also Published As

Publication number Publication date
JPS6297183U (en) 1987-06-20

Similar Documents

Publication Publication Date Title
KR20000069103A (en) Single crystal pulling apparatus
JPH0232689Y2 (en)
EP0373899A3 (en) Monocrystal ingot pulling apparatus
CN102943302A (en) Crystal clamping apparatus and zone melting single crystal furnace
JPH05270975A (en) Single crystal pulling apparatus
JP2665500B2 (en) Wire steadying device for CZ furnace
US6217648B1 (en) Single crystal pull-up apparatus and single crystal pull-up method
JP3400317B2 (en) Single crystal pulling device
JPS62252396A (en) Apparatus for pulling up single crystal
JPH11255579A (en) Single crystal pulling device
CN218119227U (en) Computer support
JPS6339848Y2 (en)
JPS60176990A (en) Chucking device of lifting machine
US3210023A (en) Dendrite pulling and reeling mechanism
JP3076488B2 (en) Semiconductor single crystal growth equipment
JPS58223691A (en) Device for growing single crystal of semiconductor
JP2838168B2 (en) Crystal pulling device
JP2000034189A (en) Single crystal-pulling machine and pulling method
JPH11199372A (en) Apparatus for pulling up single crystal, device for preventing drop and method therefor
JPS63201091A (en) Heating furnace for producing silicon single crystal
JPH11217292A (en) Single crystal producing apparatus
JPS59121188A (en) Pulling device of apparatus for pulling semiconductor crystal
JPH11240791A (en) Apparatus for holding single crystal
JPH06116084A (en) Single crystal growth device by cz process
JPH0556964U (en) Crystal growth equipment