JP4068711B2 - Single crystal manufacturing equipment - Google Patents

Single crystal manufacturing equipment Download PDF

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Publication number
JP4068711B2
JP4068711B2 JP03352598A JP3352598A JP4068711B2 JP 4068711 B2 JP4068711 B2 JP 4068711B2 JP 03352598 A JP03352598 A JP 03352598A JP 3352598 A JP3352598 A JP 3352598A JP 4068711 B2 JP4068711 B2 JP 4068711B2
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Prior art keywords
single crystal
holder
wire
crystal
claw
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JP03352598A
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JPH11217293A (en
Inventor
昇栄 黒坂
純輔 冨岡
正和 小林
明広 義本
成俊 大司
和弘 三村
浩 門田
裕 吉灘
健治 岡村
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Sumco Techxiv Corp
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Sumco Techxiv Corp
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【0001】
【発明の属する技術分野】
本発明は、CZ法による半導体単結晶の製造に用いられ、特に大重量の単結晶の引き上げに好適な単結晶製造装置に関する。
【0002】
【従来の技術】
単結晶シリコンは一般にCZ法を用いて製造されている。CZ法では、単結晶製造装置内に設置した石英るつぼに多結晶シリコンを充填し、石英るつぼの周囲に設けたヒータによって前記多結晶シリコンを加熱溶解して融液とする。そして、シードホルダに取り付けた種結晶を融液に浸漬し、シードホルダおよび石英るつぼを互いに同方向または逆方向に回転させながらシードホルダを引き上げて単結晶シリコンを所定の直径および長さに成長させる。
【0003】
種結晶には、融液に浸漬したときの熱衝撃で転位が発生する。この転位を除去するため、ダッシュネック法を用いて直径3〜4mm程度のネック部を種結晶の下方に形成し、転位をネック部の表面に逃がす。そして、無転位化が確認された後、肩部を形成して単結晶を所定の直径まで拡大させ、次いで直胴部形成に移行する。
【0004】
近年、半導体デバイス生産の効率化、歩留り向上等を目的とした単結晶の大径化あるいは軸方向長さの増大に伴ってその重量が増大し、ネック部の強度が限界に近づいている。そのため、従来の結晶引き上げ方法ではネック部が破断するおそれがあり、安全な単結晶育成ができない。この対策として、単結晶育成中にその荷重をネック部から保持具へ移し換える装置や方法が提案されている。このような装置、方法によれば単結晶重量の大部分を保持具で支えるため、ネック部の破断が防止され、ネック部が破断した場合でも保持具により単結晶の落下を防止することができる。
【0005】
上記単結晶保持具を用いる各種の単結晶引上装置のうち、特公平7−103000で開示された結晶引上装置は、複数の把持レバーをそれぞれワイヤで吊り下げ、ワイヤの昇降により把持レバーを開閉して単結晶のくびれ部を保持する構造になっている。また、把持レバーが閉じるにつれてスライドリングが自重により下降し、把持レバーの開きを阻止している。一方、特開平5−270975で開示された単結晶引上装置は、シードホルダの上方に設けた昇降用リングが上フックを押し上げると、これに連動して下フックが閉じて単結晶を保持する構造になっている。
【0006】
【発明が解決しようとする課題】
しかしながら、上記単結晶引上装置には、それぞれ次のような問題点がある。
(1)特公平7−103000による結晶引上装置は、シードホルダが保持具の位置決め機能を兼ねているため、保持具は炉内における位置を任意に選択することができず、シードホルダに追従して昇降せざるを得ない。従って、種結晶を融液に浸漬する際に把持レバーの下端が融液に近接し、高温に曝されるため、把持レバーやスライドリングの焼き付きによる作動不良を起こしたり、育成中の単結晶を汚染させるおそれがある。また、シードホルダの下端からくびれ部までの寸法が目標値を逸脱すると、所定の保持動作を行うことができない。更に、保持動作を開始するとスライドリングが下降するため、炉内で再度把持レバーを開くことができなくなる。従って、育成中に単結晶が有転位化した場合に、単結晶を保持具から外して再溶解することができず、炉外に取り出す以外に対処方法がない。
(2)特開平5−270975による単結晶引上装置は、下フックを閉じる動作をばねの張力に依存している。このため、昇降用リングが上フックを押し上げると下フックが最終位置まで瞬時に移動してしまい、このときに発生する振動により育成中の単結晶が有転位化するおそれがある。また、特公平7−103000による結晶引上装置と同様に、保持位置に移動した下フックを炉内で開くことができない。
【0007】
本発明は上記従来の問題点に着目してなされたもので、単結晶に形成したくびれ部を保持する保持具が高温に曝されず、保持具の爪閉じ動作による振動により育成中の単結晶が有転位化するおそれがなく、必要に応じて閉じた爪を開くことが可能な単結晶保持具を備えた単結晶製造装置を提供することを目的としている。
【0008】
【課題を解決するための手段】
上記目的を達成するため、本発明に係る単結晶製造装置は、単結晶に形成したくびれ部を保持しつつ単結晶を引き上げる単結晶保持具を備えた単結晶製造装置において、単結晶保持具の保持具本体を昇降させる複数本の第1ワイヤユニットと、保持具本体に揺動自在に取着した複数の爪を開閉させる複数本の第2ワイヤユニットとを有し、第2ワイヤユニットは単結晶保持具によってくびれ部を保持した後、結晶引上軸として機能することを特徴とする。
上記構成によれば、単結晶に形成したくびれ部を保持する単結晶保持具の保持具本体は複数本の第1ワイヤユニットによって昇降するので、単結晶保持具をシードホルダの昇降にかかわらず独立に昇降させることが可能である。従って、単結晶にくびれ部を形成し、更に直胴部が所定の長さに成長するまでの間は、単結晶保持具を融液面から離れた高い位置に待機させておくことができる。また、複数本の第2ワイヤユニットを操作すれば、任意の時期に単結晶保持具の爪を開閉することができ、くびれ部への爪の係合は自在である。単結晶保持具によってくびれ部を保持した後は第2ワイヤユニットを所定の速度で巻き取ることにより、単結晶の育成が継続される。
【0009】
【発明の実施の形態および実施例】
次に、本発明に係る単結晶製造装置の実施例について図面を参照して説明する。
図1は、本発明の第1実施例による単結晶製造装置を模式的に示す断面図である。この単結晶製造装置は図示しないプルチャンバの上方に真空容器1を備え、真空容器1内には結晶引上ワイヤ巻取装置2と、単結晶保持具10を昇降させる複数のワイヤ巻取装置11及びワイヤ巻取装置12とが設置されている。結晶引上ワイヤ巻取装置2から炉体中心に垂下する結晶引上ワイヤ3の下端には種結晶4を取着したシードホルダ5が繋着され、融液6を貯留するるつぼ7は図示しないメインチャンバ内に回転ならびに昇降可能に設置されている。
【0010】
単結晶保持具10は、リング状の板からなる保持具本体13と、保持具本体13の下面から突出する複数の支持部材14に一端を回動自在に取着された複数のリンク15と、各リンク15の他端に揺動自在に取着された爪16とを備えている。爪16は、揺動中心に対して内側部分すなわち炉体中心側の部分よりも外側部分が重くなるように製作されている。また、保持具本体13はワイヤ巻取装置11から垂下する複数の第1ワイヤユニット17によって釣支され、爪16の外側部分上面にはワイヤ巻取装置12から垂下する複数の第2ワイヤユニット18の下端が繋着されている。
【0011】
第1実施例の単結晶保持具10の動作は下記の通りである。
通常の単結晶引き上げと同様に結晶引き上げワイヤ3を巻き戻し、シードホルダ5に装着した種結晶4を融液6に浸漬してなじませた後、結晶引き上げワイヤ3を巻き取ることによりネック部8が形成される。更に、単結晶9の拡径部9aとくびれ部9bとを形成した後、肩部9c及び直胴部9dの形成に移行する。この間、単結晶保持具10は第1ワイヤユニット17によってメインチャンバの上部に釣支され、結晶引き上げワイヤ3と同一の回転速度で同じ方向に回転している。第2ワイヤユニット18は弛められているため、図1に示すように爪16の外側部分が下がり、内側部分が開いた状態を保っている。従って、拡径部9aは爪16の内側先端に触れることなく通過することができる。
【0012】
育成中の単結晶9があらかじめ設定した長さに育成されると、ワイヤ巻取装置11及びワイヤ巻取装置12が駆動して第1ワイヤユニット17及び第2ワイヤユニット18が巻き戻され、単結晶保持具10が下降する。爪16の内側先端が拡径部9aを通過した後、ワイヤ巻取装置11の駆動が停止され、ワイヤ巻取装置12が巻き取り側に駆動されて第2ワイヤユニット18が巻き取られる。これにより爪16の外側端部が引き上げら、リンク15の他端すなわち爪16との連結部が上方に向かって変位するため、図2に示すように爪16の内側先端が炉体中心方向に押し出され、爪を閉じた状態となる。爪16は、外側部分の上面が支持部材14の下面に当接した位置で固定され、更に第2ワイヤユニット18が巻き取られると、単結晶保持具10全体が上昇する。第1ワイヤユニット17及び第2ワイヤユニット18は結晶引き上げワイヤ3より速い速度で巻き取られ、閉じた爪16の内側先端が拡径部9aの下側円錐面に当接して単結晶9を保持する。単結晶保持具10で単結晶9を保持した後、第1ワイヤユニット17及び第2ワイヤユニット18は結晶引き上げワイヤ3と同じ上昇速度で巻き取られる。
【0013】
単結晶保持具10によって単結晶9を保持した後、単結晶9の重量の大部分を第2ワイヤユニット18によって保持し、一部を結晶引上ワイヤ3によって保持しつつ単結晶9の育成を継続する。前記両者の荷重負担割合は任意に定めるものとする。
【0014】
図3は、本発明の第2実施例による単結晶製造装置における単結晶保持具を説明する模式図で、中心線の左側は爪を開いた状態を示し、右側は爪を閉じて単結晶を保持した状態を示している。この単結晶保持具20は、リング状の板からなる保持具本体21と、保持具本体21の下面から突出する複数の支持部材22及びストッパ23と、支持部材22に揺動自在に取着された複数の爪24とを備えている。保持具本体21は第1実施例の場合と同様に、真空容器1内に設置された複数のワイヤ巻取装置(図示せず)から垂下する第1ワイヤユニット17によって釣支されている。また、複数のワイヤ巻取装置から垂下する第2ワイヤユニット18の下端は、爪24の揺動中心と先端との中間部上面に繋着されている。
【0015】
次に、第2実施例の単結晶保持具20の動作について説明する。
第1実施例の場合と同様に、ネック部8に続いて拡径部9a、くびれ部9b、肩部9c及び直胴部9dの一部が形成される。単結晶保持具20は第1ワイヤユニット17によってメインチャンバの上部に釣支され、結晶引き上げワイヤ3と同一の回転速度で同じ方向に回転している。第2ワイヤユニット18は弛められているため、爪24の先端は下向きとなり、拡径部9aが通過したときこれに接触しない。
【0016】
育成中の単結晶9があらかじめ設定した長さに育成されると、第1ワイヤユニット17及び第2ワイヤユニット18が巻き戻され、単結晶保持具20が下降する。爪24の先端が拡径部9aを通過した後、第1ワイヤユニット17及び第2ワイヤユニット18の巻き戻しが停止され、第2ワイヤユニット18が巻き取られる。これにより爪24の先端が内側に引き上げられ、爪24の側面がストッパ23に当接した後は単結晶保持具20全体が上昇する。これにより、閉じた爪24の先端は拡径部9aの下側円錐面に当接して単結晶9を保持する。その後、第1ワイヤユニット17及び第2ワイヤユニット18は結晶引き上げワイヤ3と同じ速度で巻き取られるため、単結晶保持具20によって単結晶9が引き上げられる。単結晶9の重量の大部分は単結晶保持具20によって保持される。
【0017】
上記第1実施例及び第2実施例において、結晶引上ワイヤ巻取装置2、ワイヤ巻取装置12を荷重センサの上に載置し、荷重検出値に基づいて結晶引上ワイヤ巻取装置2、ワイヤ巻取装置12の駆動トルクを制御すれば、結晶引き上げワイヤ3と単結晶保持具10(または単結晶保持具20)との荷重配分を所望の比率に制御することができる。
【0018】
上記第1実施例及び第2実施例ではワイヤ方式の単結晶製造装置について説明したが、本発明はシャフト方式の単結晶製造装置に対しても適用可能である。
【0019】
【発明の効果】
以上説明したように本発明によれば、次の効果が得られる。
(1)単結晶保持具を炉内の任意の位置に自在に移動可能としたので、育成中の単結晶の温度や重量を考慮した最適の保持タイミングを選択することができるとともに、保持具が高温に曝されることがない。
(2)単結晶保持具の爪閉じ動作と単結晶保持後の引上げ動作とを同一の昇降機構によって行うようにし、専用のワイヤ巻取装置を設置したので、これらの一連の動作を確実に遂行することができる。また、爪閉じ動作による振動が発生せず、育成中の単結晶が有転位化するおそれがない。
(3)単結晶保持具により単結晶を保持した後においても、閉じた爪を開くことが可能であるから、単結晶保持具で保持した単結晶が有転位化した場合はこれをるつぼ内に戻し、爪を開いて再溶解することが容易である。
【図面の簡単な説明】
【図1】本発明の第1実施例による単結晶製造装置の模式的断面図で、単結晶保持具の爪が開いた状態を示す。
【図2】図1の単結晶保持具で単結晶を保持した状態を示す模式図である。
【図3】第2実施例の単結晶保持具で、爪の開閉状態を示す模式図である。
【符号の説明】
1 真空容器
2 結晶引上ワイヤ巻取装置
3 結晶引上ワイヤ
9 単結晶
9a 拡径部
9b くびれ部
10,20 単結晶保持具
11,12 ワイヤ巻取装置
13,21 保持具本体
15 リンク
16,24 爪
17 第1ワイヤユニット
18 第2ワイヤユニット
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a single crystal manufacturing apparatus which is used for manufacturing a semiconductor single crystal by a CZ method and is particularly suitable for pulling a large weight single crystal.
[0002]
[Prior art]
Single crystal silicon is generally manufactured using the CZ method. In the CZ method, polycrystalline silicon is filled in a quartz crucible installed in a single crystal manufacturing apparatus, and the polycrystalline silicon is heated and melted by a heater provided around the quartz crucible to obtain a melt. Then, the seed crystal attached to the seed holder is immersed in the melt, and the seed holder is pulled up while rotating the seed holder and the quartz crucible in the same direction or in the opposite direction to grow single crystal silicon to a predetermined diameter and length. .
[0003]
In the seed crystal, dislocation occurs due to thermal shock when immersed in the melt. In order to remove this dislocation, a neck portion having a diameter of about 3 to 4 mm is formed below the seed crystal by using the dash neck method, and the dislocation is released to the surface of the neck portion. Then, after confirmation of dislocation-freeness, the shoulder portion is formed to enlarge the single crystal to a predetermined diameter, and then the process shifts to the formation of the straight body portion.
[0004]
In recent years, as the diameter of a single crystal is increased or the length in the axial direction is increased for the purpose of improving the efficiency of production of semiconductor devices and improving yield, the strength of the neck portion is approaching its limit. Therefore, in the conventional crystal pulling method, there is a possibility that the neck portion is broken, and safe single crystal growth cannot be performed. As a countermeasure, an apparatus and a method for transferring the load from the neck portion to the holder during single crystal growth have been proposed. According to such an apparatus and method, since most of the weight of the single crystal is supported by the holder, the neck portion is prevented from being broken, and even when the neck portion is broken, the holder can prevent the single crystal from falling. .
[0005]
Among the various single crystal pulling devices using the single crystal holder described above, the crystal pulling device disclosed in Japanese Patent Publication No. 7-103000 hangs a plurality of gripping levers with wires, and pulls the gripping levers by raising and lowering the wires. It has a structure that opens and closes to hold the constricted portion of the single crystal. Further, as the grip lever is closed, the slide ring is lowered by its own weight to prevent the grip lever from opening. On the other hand, in the single crystal pulling apparatus disclosed in JP-A-5-270975, when the lifting ring provided above the seed holder pushes up the upper hook, the lower hook closes and holds the single crystal in conjunction with this. It has a structure.
[0006]
[Problems to be solved by the invention]
However, the single crystal pulling apparatus has the following problems.
(1) In the crystal pulling apparatus according to Japanese Patent Publication No. 7-103000, since the seed holder also serves as a holder positioning function, the holder cannot arbitrarily select a position in the furnace, and follows the seed holder. Then you have to go up and down. Therefore, when the seed crystal is immersed in the melt, the lower end of the grip lever is close to the melt and is exposed to high temperatures, which may cause malfunction due to seizure of the grip lever and the slide ring, and the growing single crystal. There is a risk of contamination. Moreover, if the dimension from the lower end of the seed holder to the constricted portion deviates from the target value, a predetermined holding operation cannot be performed. Furthermore, when the holding operation is started, the slide ring is lowered, and therefore it is impossible to open the grip lever again in the furnace. Therefore, when the single crystal is dislocated during the growth, the single crystal cannot be removed from the holder and re-dissolved, and there is no countermeasure other than taking it out of the furnace.
(2) The single crystal pulling apparatus according to Japanese Patent Laid-Open No. 5-270975 relies on the tension of the spring to close the lower hook. For this reason, when the elevating ring pushes up the upper hook, the lower hook is instantaneously moved to the final position, and the growing single crystal may be dislocated due to the vibration generated at this time. Further, like the crystal pulling apparatus according to Japanese Patent Publication No. 7-103000, the lower hook moved to the holding position cannot be opened in the furnace.
[0007]
The present invention has been made paying attention to the above-mentioned conventional problems, and the single crystal being grown by vibration due to the nail closing operation of the holder is not exposed to a high temperature when the holder holding the constricted portion formed in the single crystal is exposed to high temperature. It is an object of the present invention to provide a single crystal production apparatus provided with a single crystal holder that can open a closed nail as necessary without causing a dislocation.
[0008]
[Means for Solving the Problems]
In order to achieve the above object, a single crystal manufacturing apparatus according to the present invention includes a single crystal holding apparatus for pulling up a single crystal while holding a constricted portion formed in the single crystal. A plurality of first wire units for raising and lowering the holder body; and a plurality of second wire units for opening and closing a plurality of claws attached to the holder body in a swingable manner. After the constricted portion is held by the crystal holder, it functions as a crystal pulling shaft.
According to the above configuration, since the holder body of the single crystal holder that holds the constricted portion formed in the single crystal is raised and lowered by the plurality of first wire units, the single crystal holder can be independent regardless of the raising and lowering of the seed holder. Can be raised and lowered. Therefore, the single crystal holder can be kept at a high position away from the melt surface until the constricted portion is formed in the single crystal and the straight body portion grows to a predetermined length. Further, by operating a plurality of second wire units, the claws of the single crystal holder can be opened and closed at any time, and the claws can be freely engaged with the constricted portions. After the constricted portion is held by the single crystal holder, the single wire is continuously grown by winding the second wire unit at a predetermined speed.
[0009]
BEST MODE FOR CARRYING OUT THE INVENTION
Next, embodiments of the single crystal manufacturing apparatus according to the present invention will be described with reference to the drawings.
FIG. 1 is a sectional view schematically showing a single crystal manufacturing apparatus according to a first embodiment of the present invention. This single crystal manufacturing apparatus includes a vacuum vessel 1 above a pull chamber (not shown), and in the vacuum vessel 1, a crystal pulling wire winding device 2, a plurality of wire winding devices 11 for raising and lowering a single crystal holder 10, and A wire take-up device 12 is installed. A seed holder 5 having a seed crystal 4 attached thereto is connected to the lower end of the crystal pulling wire 3 hanging from the crystal pulling wire winding device 2 to the center of the furnace body, and a crucible 7 for storing the melt 6 is not shown. It is installed in the main chamber so that it can rotate and move up and down.
[0010]
The single crystal holder 10 includes a holder main body 13 made of a ring-shaped plate, a plurality of links 15 having one ends rotatably attached to a plurality of support members 14 protruding from the lower surface of the holder main body 13, A claw 16 attached to the other end of each link 15 is provided. The nail | claw 16 is manufactured so that an inner side part, ie, the outer side part, may become heavier than a rocking | fluctuation center. The holder body 13 is supported by a plurality of first wire units 17 that hang from the wire take-up device 11, and a plurality of second wire units 18 that hang from the wire take-up device 12 on the upper surface of the outer portion of the claw 16. The lower end of is connected.
[0011]
The operation of the single crystal holder 10 of the first embodiment is as follows.
The crystal pulling wire 3 is rewound in the same manner as in the normal single crystal pulling, the seed crystal 4 mounted on the seed holder 5 is immersed in the melt 6 and then the neck portion 8 is wound by winding the crystal pulling wire 3. Is formed. Further, after forming the enlarged diameter portion 9a and the constricted portion 9b of the single crystal 9, the process proceeds to the formation of the shoulder portion 9c and the straight body portion 9d. During this time, the single crystal holder 10 is supported on the upper part of the main chamber by the first wire unit 17 and is rotating in the same direction at the same rotational speed as the crystal pulling wire 3. Since the second wire unit 18 is loosened, the outer part of the claw 16 is lowered and the inner part is kept open as shown in FIG. Therefore, the enlarged diameter portion 9a can pass without touching the inner tip of the claw 16.
[0012]
When the growing single crystal 9 is grown to a preset length, the wire winding device 11 and the wire winding device 12 are driven to unwind the first wire unit 17 and the second wire unit 18, The crystal holder 10 is lowered. After the inner tip of the claw 16 passes through the enlarged diameter portion 9a, the driving of the wire winding device 11 is stopped, the wire winding device 12 is driven to the winding side, and the second wire unit 18 is wound. As a result, the outer end of the claw 16 is pulled up, and the other end of the link 15, that is, the connecting portion with the claw 16 is displaced upward. As shown in FIG. It is pushed out and the nail is closed. The claw 16 is fixed at a position where the upper surface of the outer portion is in contact with the lower surface of the support member 14, and when the second wire unit 18 is further wound, the entire single crystal holder 10 is raised. The first wire unit 17 and the second wire unit 18 are wound up at a speed higher than that of the crystal pulling wire 3, and the inner tip of the closed claw 16 contacts the lower conical surface of the enlarged diameter portion 9a to hold the single crystal 9. To do. After holding the single crystal 9 with the single crystal holder 10, the first wire unit 17 and the second wire unit 18 are wound up at the same ascending speed as the crystal pulling wire 3.
[0013]
After holding the single crystal 9 by the single crystal holder 10, the majority of the weight of the single crystal 9 is held by the second wire unit 18, and the single crystal 9 is grown while holding a part by the crystal pulling wire 3. continue. The load burden ratio between the two is arbitrarily determined.
[0014]
FIG. 3 is a schematic diagram for explaining a single crystal holder in the single crystal manufacturing apparatus according to the second embodiment of the present invention, in which the left side of the center line shows a state where the nail is opened, and the right side shows a state where the single crystal is closed by closing the nail. The held state is shown. The single crystal holder 20 is swingably attached to a holder body 21 made of a ring-shaped plate, a plurality of support members 22 and stoppers 23 protruding from the lower surface of the holder body 21, and the support member 22. And a plurality of claws 24. As in the case of the first embodiment, the holder main body 21 is supported by a first wire unit 17 suspended from a plurality of wire winding devices (not shown) installed in the vacuum vessel 1. The lower end of the second wire unit 18 that hangs down from the plurality of wire winding devices is connected to the upper surface of the intermediate portion between the swing center and the tip of the claw 24.
[0015]
Next, the operation of the single crystal holder 20 of the second embodiment will be described.
As in the case of the first embodiment, the enlarged diameter portion 9a, the constricted portion 9b, the shoulder portion 9c, and a part of the straight body portion 9d are formed following the neck portion 8. The single crystal holder 20 is supported on the upper part of the main chamber by the first wire unit 17 and rotates in the same direction at the same rotational speed as the crystal pulling wire 3. Since the 2nd wire unit 18 is loosened, the front-end | tip of the nail | claw 24 turns downward and does not contact this when the enlarged diameter part 9a passes.
[0016]
When the growing single crystal 9 is grown to a preset length, the first wire unit 17 and the second wire unit 18 are rewound, and the single crystal holder 20 is lowered. After the tip of the claw 24 passes through the enlarged diameter portion 9a, the unwinding of the first wire unit 17 and the second wire unit 18 is stopped, and the second wire unit 18 is wound up. As a result, the tip of the claw 24 is pulled inward, and after the side surface of the claw 24 comes into contact with the stopper 23, the entire single crystal holder 20 is raised. As a result, the tip of the closed claw 24 abuts on the lower conical surface of the enlarged diameter portion 9 a to hold the single crystal 9. Thereafter, since the first wire unit 17 and the second wire unit 18 are wound up at the same speed as the crystal pulling wire 3, the single crystal 9 is pulled up by the single crystal holder 20. Most of the weight of the single crystal 9 is held by the single crystal holder 20.
[0017]
In the first and second embodiments, the crystal pulling wire winding device 2 and the wire winding device 12 are placed on a load sensor, and the crystal pulling wire winding device 2 is based on the detected load value. If the driving torque of the wire winding device 12 is controlled, the load distribution between the crystal pulling wire 3 and the single crystal holder 10 (or the single crystal holder 20) can be controlled to a desired ratio.
[0018]
In the first and second embodiments, the wire type single crystal manufacturing apparatus has been described. However, the present invention is also applicable to a shaft type single crystal manufacturing apparatus.
[0019]
【The invention's effect】
As described above, according to the present invention, the following effects can be obtained.
(1) Since the single crystal holder can be freely moved to an arbitrary position in the furnace, it is possible to select an optimal holding timing in consideration of the temperature and weight of the growing single crystal and No exposure to high temperatures.
(2) The claw closing operation of the single crystal holder and the pulling operation after holding the single crystal are performed by the same lifting mechanism, and a dedicated wire winding device is installed, so these series of operations are performed reliably. can do. Further, vibration due to the claw closing operation does not occur, and there is no possibility that the single crystal being grown is dislocated.
(3) Even after holding the single crystal with the single crystal holder, it is possible to open the closed nail, so if the single crystal held with the single crystal holder is dislocated, put it in the crucible. It is easy to return, open the nail and redissolve.
[Brief description of the drawings]
FIG. 1 is a schematic cross-sectional view of a single crystal manufacturing apparatus according to a first embodiment of the present invention, showing a state in which a nail of a single crystal holder is open.
2 is a schematic diagram showing a state where a single crystal is held by the single crystal holder of FIG. 1. FIG.
FIG. 3 is a schematic view showing an open / close state of a nail in the single crystal holder of the second embodiment.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Vacuum container 2 Crystal pulling wire winding apparatus 3 Crystal pulling wire 9 Single crystal 9a Expanding part 9b Narrow part 10 and 20 Single crystal holders 11 and 12 Wire winding apparatuses 13 and 21 Holder main body 15 Link 16, 24 Claw 17 First wire unit 18 Second wire unit

Claims (1)

くびれ部(9b)を保持して単結晶(9)を引き上げる単結晶保持具(10)を備えた単結晶製造装置において、
単結晶保持具(10)の保持具本体(13)を昇降させる複数本の第1ワイヤユニット(17)と、
保持具本体(13)に揺動自在に取着した複数の爪(16)を開閉させる複数本の第2ワイヤユニット(18)と
を有し、
単結晶保持具 (10) は、爪 (16) の向きを変更させて、くびれ部 (9b) を保持し、
第2ワイヤユニット(18)は単結晶保持具(10)によってくびれ部(9b) 保持された後、結晶引上軸として機能する
ことを特徴とする単結晶製造装置。
In the single crystal manufacturing apparatus provided with the single crystal holder (10) that pulls up the single crystal (9) while holding the constricted portion (9b),
A plurality of first wire units (17) for moving up and down the holder body (13) of the single crystal holder (10);
A plurality of second wire units (18) for opening and closing a plurality of claws (16) pivotably attached to the holder body (13);
The single crystal holder (10) changes the direction of the nails (16 ) to hold the constricted part (9b) ,
The second wire unit (18) functions as a crystal pulling shaft after the constricted portion (9b) is held by the single crystal holder (10).
JP03352598A 1998-02-02 1998-02-02 Single crystal manufacturing equipment Expired - Lifetime JP4068711B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP03352598A JP4068711B2 (en) 1998-02-02 1998-02-02 Single crystal manufacturing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP03352598A JP4068711B2 (en) 1998-02-02 1998-02-02 Single crystal manufacturing equipment

Publications (2)

Publication Number Publication Date
JPH11217293A JPH11217293A (en) 1999-08-10
JP4068711B2 true JP4068711B2 (en) 2008-03-26

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP4068711B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008047599B4 (en) * 2008-09-17 2012-12-20 Siltronic Ag Apparatus and method for pulling a single crystal

Also Published As

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