JP2990659B2 - Single crystal pulling device - Google Patents

Single crystal pulling device

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Publication number
JP2990659B2
JP2990659B2 JP8236361A JP23636196A JP2990659B2 JP 2990659 B2 JP2990659 B2 JP 2990659B2 JP 8236361 A JP8236361 A JP 8236361A JP 23636196 A JP23636196 A JP 23636196A JP 2990659 B2 JP2990659 B2 JP 2990659B2
Authority
JP
Japan
Prior art keywords
single crystal
pulling
holding mechanism
holding
sub
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP8236361A
Other languages
Japanese (ja)
Other versions
JPH1081582A (en
Inventor
清文 西浦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Sumitomo Metal Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Industries Ltd filed Critical Sumitomo Metal Industries Ltd
Priority to JP8236361A priority Critical patent/JP2990659B2/en
Priority to DE19781966T priority patent/DE19781966T1/en
Priority to DE19781966A priority patent/DE19781966B4/en
Priority to US09/254,087 priority patent/US6139633A/en
Priority to PCT/JP1997/003042 priority patent/WO1998010125A1/en
Publication of JPH1081582A publication Critical patent/JPH1081582A/en
Priority to KR1019997001707A priority patent/KR100310780B1/en
Application granted granted Critical
Publication of JP2990659B2 publication Critical patent/JP2990659B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明はチョクラルスキー法
(以下、「CZ法」という)によって単結晶を製造する
引上装置に関し、さらに詳しくは大重量の単結晶を製造
する際に単結晶の落下を生ずることなく安全に引き上げ
ることができる単結晶引上装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pulling apparatus for producing a single crystal by the Czochralski method (hereinafter, referred to as "CZ method"). The present invention relates to a single crystal pulling device that can be safely pulled up without dropping.

【0002】[0002]

【従来の技術】単結晶の製造方法は種々あるが、なかで
も、シリコン単結晶の育成に関し、工業的に量産が可能
な方式で広く応用されているものとしてCZ法がある。
この方法による単結晶の製造は、坩堝内に収容された結
晶原料の溶融液の表面に種結晶を接触させ、坩堝を回転
させるとともに、この種結晶を反対方向に回転させなが
ら上方へ引上げることによって、種結晶の下端に溶融液
が凝固した単結晶を育成していく。
2. Description of the Related Art There are various methods for producing a single crystal. Among them, the CZ method is widely applied in a method capable of industrial mass production for growing a silicon single crystal.
The production of a single crystal by this method involves bringing a seed crystal into contact with the surface of a melt of a crystal raw material contained in a crucible, rotating the crucible, and pulling the seed crystal upward while rotating the seed crystal in the opposite direction. Thereby, a single crystal in which the melt is solidified grows at the lower end of the seed crystal.

【0003】CZ法によって単結晶を製造する場合に、
種結晶を溶融液に接触させたとき熱ショックで発生した
転位を完全に除去し、単結晶の本体(ボディ)に及ばな
いようにする必要がある。通常、この方策として、転位
を結晶表面から排除して単結晶を無転位化するために、
直径を細長く絞る、所謂「ダッシュズネック処理」が採
用されている。このときの無転位化に必要なダッシュズ
ネックの直径は約3mmで、その長さは30mm必要とされて
いる。
When a single crystal is produced by the CZ method,
When the seed crystal is brought into contact with the melt, it is necessary to completely remove dislocations generated by the thermal shock so as not to reach the single crystal body. Usually, as this measure, in order to eliminate dislocations from the crystal surface and make the single crystal dislocation-free,
A so-called "dash neck processing" for narrowing the diameter into an elongated shape is employed. At this time, the diameter of the dashes neck necessary for eliminating dislocations is about 3 mm, and its length is required to be 30 mm.

【0004】従来、CZ法によって製造される単結晶の
重量は、20〜30Kg程度に限定されていたが、近年におい
て半導体製造の効率化の要請が強く、単結晶の大径化と
共に長尺化の傾向が顕著となり、単結晶の重量が 100Kg
を超える場合も多くなってきた。単結晶の重量は細く絞
られたダッシュズネック部で負担するのであるが、上述
の通り、製造される単結晶の重量が増大してきても、負
担できる荷重に限界がある。単結晶が重くなり過ぎて引
上中に捩じれまたは曲げ応力が加わると、単結晶のダッ
シュズネックが破損し、単結晶が坩堝内の溶融液に落下
することになり、さらに引上装置の損傷や溶融液の流
出、水蒸気爆発等の事態が発生し、人身事故を招く恐れ
もある。
Conventionally, the weight of a single crystal manufactured by the CZ method has been limited to about 20 to 30 kg. However, in recent years, there has been a strong demand for more efficient semiconductor manufacturing. And the weight of the single crystal is 100 kg
In many cases. The weight of the single crystal is borne by the narrowed dash neck portion. However, as described above, even if the weight of the manufactured single crystal increases, the load that can be borne is limited. If the single crystal becomes too heavy and torsional or bending stress is applied during pulling, the dash's neck of the single crystal will break, and the single crystal will fall into the melt in the crucible, further damaging the pulling equipment. , Outflow of molten liquid, explosion of steam, etc. may occur, leading to personal injury.

【0005】そこで、単結晶の大重量化にともなって頻
発することが予想される引上中の落下等の事故を防止す
ることを目的として、改善を加えた引上装置が提案され
ている(例えば、特開平3−285893号公報、特開平3−
295893号公報参照)。すなわち、単結晶の上部に係合段
部を形成し、この係合段部を複数の爪、または爪を有す
る複数の把持ホルダーで係合・把持する構造を採用する
ことによって、引上途中における単結晶の落下を防いで
いる。このため、提案の引上装置を用いれば、大重量の
単結晶を引上げる場合であっても、単結晶の引上を確
実、かつ安全に行うことができるとしている。
Therefore, an improved pulling device has been proposed for the purpose of preventing an accident such as a drop during pulling which is expected to occur frequently with an increase in the weight of a single crystal (FIG. 1). For example, JP-A-3-285893, JP-A-3-285893
295893). That is, by forming an engaging step on the upper part of the single crystal and adopting a structure in which the engaging step is engaged and gripped by a plurality of claws or a plurality of grip holders having claws, The single crystal is prevented from falling. For this reason, the use of the proposed pulling apparatus makes it possible to pull up a single crystal reliably and safely even when pulling a heavy single crystal.

【0006】[0006]

【発明が解決しようとする課題】特開平3−285893号公
報および特開平3−295893号公報で開示された引上装置
では、前述の通り、単結晶に形成された係合段部を爪、
または爪を有する把持ホルダーで係合・把持するもので
あり、このとき、引上られる単結晶の中心位置と引上軸
とのズレを無くすことが品質上重要な管理項目になる。
そのため、上記の引上装置では、これらの対応として複
数の爪または複数の把持ホルダーを設けて、個々の爪ま
たは把持ホルダーの微調整によって位置ズレをなくし、
係合段部での係合・把持を確実なものとしている。
In the lifting apparatus disclosed in Japanese Patent Application Laid-Open Nos. 3-285893 and 3-295893, as described above, the engaging step formed on the single crystal is formed by a claw,
Alternatively, a gripping holder having claws is engaged and gripped. At this time, eliminating a deviation between the center position of the pulled single crystal and the pulling axis is an important management item in terms of quality.
Therefore, in the above-described lifting device, a plurality of claws or a plurality of grip holders are provided as a countermeasure for them, and a positional shift is eliminated by fine adjustment of each nail or the grip holder,
Engagement and gripping at the engagement step portion is ensured.

【0007】しかしながら、単結晶の引上は密閉された
真空チャンバー内で行われるから、常時、上昇および回
転を続ける単結晶の係合段部に合致するように爪または
把持ホルダーの動作を外部から遠隔操作で微調整するの
は非常に困難である。そのため、係合段部で係合・把持
される位置の調整が不具合になり易く、一旦位置ズレが
発生すると引上げられた単結晶の品質の著しい低下を及
ぼすだけでなく、引上中に単結晶に捩じれが加わり単結
晶が大きく傾いて、爪または把持ホルダーの係合が外れ
単結晶を落下させる恐れもある。
However, since the pulling of the single crystal is performed in a closed vacuum chamber, the operation of the claw or the gripping holder must be controlled from the outside so as to match the engaging step of the single crystal which is constantly rising and rotating. It is very difficult to fine-tune by remote control. Therefore, the adjustment of the position where the engagement step portion is engaged and gripped tends to be inconvenient, and once a displacement occurs, not only does the quality of the pulled single crystal significantly deteriorate, but also the single crystal is pulled during the pulling. In addition, the single crystal may be greatly inclined due to the torsion, and the nail or the grip holder may be disengaged to drop the single crystal.

【0008】本発明は、上述した従来の引上装置で見ら
れる問題点を解決し、単結晶に設けられた係合段部での
係合・把持を確実なものとし、大重量の単結晶を引上げ
る場合であっても落下事故を発生することなく、単結晶
を適切に製造することができて、安全性に優れる単結晶
引上装置を提供することを目的としている。
SUMMARY OF THE INVENTION The present invention solves the above-described problems of the conventional pulling apparatus, and ensures engagement and gripping at an engaging step provided on a single crystal, thereby achieving a heavy weight single crystal. It is an object of the present invention to provide a single crystal pulling apparatus which can appropriately manufacture a single crystal without causing a fall accident even when pulling a single crystal and is excellent in safety.

【0009】[0009]

【課題を解決するための手段】本発明は、図1に示すよ
うに、次の単結晶引上装置を要旨としている。
The present invention, as shown in FIG. 1, has the following single crystal pulling apparatus.

【0010】すなわち、回転されつつ引上げられる単結
晶3に逆円錐状の係合段部6を形成させるメイン引上手
段23と、その単結晶を把持する保持機構11と、前記メイ
ン引上手段の引上速度と同調して前記保持機構を上昇さ
せるサブ引上手段24を具備する単結晶引上装置であっ
て、前記保持機構にはその昇降にともなって所定の昇降
位置で上下動するプッシュロッド16と、このプッシュロ
ッドの上昇動作によって旋回し前記単結晶の係合段部6
を係合・把持する係合部材13とが設けられていることを
特徴とする単結晶引上装置である。
That is, the main pulling means 23 for forming the inverted conical engaging step 6 in the single crystal 3 which is pulled while being rotated, the holding mechanism 11 for gripping the single crystal, and the main pulling means A single crystal pulling apparatus comprising a sub pulling means 24 for raising the holding mechanism in synchronization with a pulling speed, wherein the holding mechanism has a push rod which moves up and down at a predetermined lifting position as the lifting mechanism moves. 16 and the single crystal engaging step 6
And an engaging member 13 for engaging and gripping the single crystal.

【0011】ここで保持機構に設けられる「係合部材」
とは、後述の図1、図4に示すように、保持レバー14お
よび回転レバー15によって一体的に構成されるものであ
り、回転レバー15の先端部はプッシュロッド16と当接さ
れている。
Here, an "engaging member" provided on the holding mechanism is provided.
As shown in FIG. 1 and FIG. 4 described later, the holding lever 14 and the rotating lever 15 are integrally formed, and the tip of the rotating lever 15 is in contact with the push rod 16.

【0012】上記の引上装置において、メイン引上手段
23およびサブ引上手段24はワイヤーの巻上、巻下によっ
て独立して昇降可能とし、さらにサブ引上手段24は保持
機構の傾き防止手段18を介して保持機構11を昇降させる
のが望ましい。保持機構11の傾きを解消し、安定した引
上操作と単結晶の品質向上が図れるからである。
In the above lifting device, the main lifting means
It is desirable that the 23 and the sub-raising means 24 can be independently raised and lowered by winding and unwinding the wire, and the sub-raising means 24 should raise and lower the holding mechanism 11 via the inclination preventing means 18 of the holding mechanism. This is because the inclination of the holding mechanism 11 is eliminated, and a stable pulling operation and an improvement in the quality of the single crystal can be achieved.

【0013】[0013]

【発明の実施の形態】本発明の単結晶引上装置では、メ
イン引上手段によって種結晶を溶融液面へ接触後、回転
させながら引き上げてダッシュズネック処理し、次いで
単結晶に逆円錐状の係合段部を形成さてのち、ショルダ
ーの成形および単結晶本体の引上げを行う。一方、引上
の進捗にともなって単結晶の重量が増加するが、ダッシ
ュズネック部で負担できる荷重の限界に達する前に、サ
ブ引上手段による単結晶の保持に移行する。
BEST MODE FOR CARRYING OUT THE INVENTION In a single crystal pulling apparatus of the present invention, a seed crystal is brought into contact with a melt surface by a main pulling means, pulled up while rotating, and subjected to a dashes neck treatment. After the engagement step is formed, the shoulder is formed and the single crystal body is pulled up. On the other hand, the weight of the single crystal increases with the progress of pulling, but before reaching the limit of the load that can be borne by the dash neck portion, the process shifts to holding the single crystal by the sub pulling means.

【0014】具体的な操作として、サブ引上手段の下降
操作によって上方で待機していた保持機構を下降させ
る。この下降の際、保持機構の下端に設けられたプッシ
ュロッドが、所定の位置で単結晶ショルダーに押し上げ
られて上昇動作する。この上昇動作によって、これと当
接している係合部材の回転レバーが押し上げられるとと
もに、保持レバーは旋回して単結晶の係合段部を係合す
る。旋回して閉じた保持レバーの受け面は切れ目のない
リング形状をしているので、単結晶を確実に係合・把持
することができる。
As a specific operation, the holding mechanism, which has been waiting above, is lowered by the lowering operation of the sub pulling means. At the time of this lowering, the push rod provided at the lower end of the holding mechanism is pushed up by the single crystal shoulder at a predetermined position and moves up. By this ascent operation, the rotating lever of the engaging member that is in contact with this is pushed up, and the holding lever pivots to engage the engaging step of the single crystal. Since the receiving surface of the holding lever that has been turned and closed has a continuous ring shape, the single crystal can be securely engaged and gripped.

【0015】保持機構の保持レバーによる単結晶の係合
・把持が完了すると、メイン引上手段とサブ引上手段の
引上速度を同調させて保持機構を上昇させる。このと
き、保持機構の傾きをなくすために、エコライザー等の
傾き防止手段を取り付けることが望ましい。
When the engagement and grip of the single crystal by the holding lever of the holding mechanism is completed, the holding mechanism is raised by synchronizing the pulling speeds of the main pulling means and the sub pulling means. At this time, in order to eliminate the inclination of the holding mechanism, it is desirable to attach an inclination preventing means such as an equalizer.

【0016】[0016]

【実施例】以下、本発明の単結晶引上装置の具体的な構
成例を図面に基づいて説明する。
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view of a single crystal pulling apparatus according to the present invention.

【0017】図1は、本発明装置の全体構成例を説明す
る縦断面図である。同図に示すように、真空チャンバ
(図示せず)内の中心位置には坩堝1が配設され、その
内部には原料となる多結晶シリコンが溶融された溶融液
2が保持されている。坩堝1の上方には種結晶ホルダー
10、保持機構11が配置され、さらに上方にはシリコン単
結晶3を回転させつつ引き上げる手段であるメイン引上
手段23と、保持機構11を昇降させる手段であるサブ引上
手段24とが設けられ、これらは引上機構22を構成する。
FIG. 1 is a longitudinal sectional view for explaining an example of the overall configuration of the apparatus of the present invention. As shown in FIG. 1, a crucible 1 is provided at a central position in a vacuum chamber (not shown), and a melt 2 in which polycrystalline silicon as a raw material is melted is held therein. Seed crystal holder above crucible 1
10, a holding mechanism 11 is disposed, and further provided above the main pulling means 23 as means for pulling up the silicon single crystal 3 while rotating it, and a sub-pulling means 24 as means for raising and lowering the holding mechanism 11 are provided. , These constitute a lifting mechanism 22.

【0018】本発明装置においては、メイン引上手段23
によって巻き取られる1本のメインワイヤー20と、サブ
引上手段24によって巻き取られる2本のサブワイヤー21
とが垂設されており、これらは独立して昇降が行われ
る。また、メイン引上手段23とサブ引上手段24とから成
る引上機構22は、引上工程において単結晶を一定速度で
回転させるため、図示しない構造によって所定方向に回
転される。
In the apparatus of the present invention, the main pulling means 23
One main wire 20 wound by the sub-raising means 24 and two main wires 21
And these are independently lifted and lowered. The pulling mechanism 22 composed of the main pulling means 23 and the sub pulling means 24 is rotated in a predetermined direction by a structure (not shown) to rotate the single crystal at a constant speed in the pulling step.

【0019】上記メインワイヤー20の下端には種結晶ホ
ルダー10が取り付けられ、一方、2本のサブワイヤー21
の先端にはエコライザー18を介して保持機構11が配置さ
れている。ここで用いられるエコライザー18は、保持機
構11の傾き防止手段として作用する。
At the lower end of the main wire 20, a seed crystal holder 10 is attached.
The holding mechanism 11 is disposed at the tip of the holding mechanism 11 via an equalizer 18. The equalizer 18 used here functions as a means for preventing the holding mechanism 11 from tilting.

【0020】図2は、前記図1のA−A矢視で示される
保持機構およびエコライザーの横断面図である。図中の
符号12は保持機構の外観を形成する保持ホルダーである
が、エコライザー18はピン19を介して保持ホルダー12に
軸支されるとともに、2本のサブワイヤー21によって垂
設される。このような構造を採用するので、2本のサブ
ワイヤー21の巻取りに差が生じたとしてもエコライザー
18が傾くことになるが、保持機構11には影響が及ばな
い。したがって、保持機構11の中心軸と単結晶3の中心
軸とがずれることなく、保持機構11によって単結晶を確
実に保持することができる。
FIG. 2 is a cross-sectional view of the holding mechanism and the equalizer indicated by arrows AA in FIG. Reference numeral 12 in the figure denotes a holding holder that forms the appearance of the holding mechanism. The equalizer 18 is supported by the holding holder 12 via a pin 19 and is vertically provided by two sub-wires 21. By adopting such a structure, even if there is a difference in the winding of the two sub wires 21, the
Although 18 tilts, the holding mechanism 11 is not affected. Therefore, the single crystal can be reliably held by the holding mechanism 11 without the center axis of the holding mechanism 11 being displaced from the center axis of the single crystal 3.

【0021】図3は、前記図1のB−B矢視で示される
保持機構に設けられる係合部材の構成例を説明する平面
図である。図1および図3から明らかなように、係合部
材13は保持レバー14および回転レバー15によって一体的
に構成される。係合部材13は保持ホルダー12の内面下端
部に回転自在の状態で取り付けられ、保持ホルダー12側
の支点を中心として、保持レバー14は垂直となるように
開いた状態から水平となる閉じた状態になるまで90°旋
回できる。
FIG. 3 is a plan view for explaining an example of the structure of an engaging member provided in the holding mechanism shown by the arrow BB in FIG. As is clear from FIGS. 1 and 3, the engaging member 13 is integrally formed by the holding lever 14 and the rotating lever 15. The engagement member 13 is rotatably attached to the lower end of the inner surface of the holding holder 12, and the holding lever 14 is opened from a vertical state to a horizontal state about a fulcrum on the holding holder 12 side. You can turn 90 degrees until

【0022】図4は、保持機構の下降にともなって係合
部材が旋回する動作を説明する図である。前述の通り、
メイン引上手段23で負担できる荷重の限界に達する前
に、サブ引上手段の下降操作によって上方で待機してい
た保持機構11を下降させる。この下降の際、単結晶の係
合段部に形成される径大部7が保持機構11の下端部を通
過したのち、保持機構11の下端に設けられたプッシュロ
ッド16が、単結晶ショルダー4に押し上げられて上昇す
る。このプッシュロッド16の上昇動作によって、これと
当接している回転レバー15が押し上げられ、一体で構成
される保持レバー14が旋回して、単結晶の係合段部を係
合するように閉じる。閉じられた保持レバー14はストッ
パー17に支持され、前記図3に示すように、一定の開口
孔径を形成する。この開口孔径は単結晶の径大部より小
さな径であり、しかも、保持レバーの受け面は切れ目の
ないリング形状をしているので、一旦保持レバーが閉じ
られると、係合が外れる心配はなく、単結晶の係合段部
に寸法的なズレがあっても、確実に係合・把持すること
ができる。
FIG. 4 is a view for explaining an operation in which the engaging member turns as the holding mechanism descends. As mentioned above,
Before the limit of the load that can be borne by the main pulling means 23 is reached, the holding mechanism 11 waiting above is lowered by the lowering operation of the sub pulling means. During this lowering, after the large-diameter portion 7 formed in the engagement step portion of the single crystal passes through the lower end of the holding mechanism 11, the push rod 16 provided at the lower end of the holding mechanism 11 moves the single crystal shoulder 4 It is pushed up and rises. Due to the upward movement of the push rod 16, the rotating lever 15 in contact with the push rod 16 is pushed up, and the holding lever 14, which is integrally formed, pivots and closes to engage the engaging step of the single crystal. The closed holding lever 14 is supported by a stopper 17 and forms a fixed opening hole diameter as shown in FIG. The diameter of the opening hole is smaller than the large diameter portion of the single crystal, and the receiving surface of the holding lever has a continuous ring shape. Therefore, once the holding lever is closed, there is no fear of disengagement. Even if there is a dimensional deviation in the engagement step portion of the single crystal, it can be securely engaged and gripped.

【0023】本発明装置において、係合部材13を保持レ
バー14および回転レバー15によって構成することによっ
て、回転レバー15が水平状態からプッシュロッド16の押
し上げによって角度30°程度の旋回を行うと、係合部材
13の重心位置が変化し、その後は自重によって旋回が持
続され、保持レバー14は閉じた状態に移行する。保持レ
バー14は閉じた状態では、保持レバーの受け面が寄り集
まってリング状の保持面を形成する。
In the apparatus according to the present invention, the engaging member 13 is constituted by the holding lever 14 and the rotating lever 15, so that when the rotating lever 15 makes a turn of about 30 ° by pushing up the push rod 16 from the horizontal state, the engaging member is engaged. Joint material
The position of the center of gravity of 13 changes, and thereafter the turning is continued by its own weight, and the holding lever 14 shifts to the closed state. When the holding lever 14 is in the closed state, the receiving surfaces of the holding lever gather to form a ring-shaped holding surface.

【0024】保持ホルダー12の内面円周に設けられる係
合部材の個数は、図3では4個の場合を示しているが、
リング状の保持面が形成できる限りにおいて、これに限
定するものではない。
Although the number of the engaging members provided on the inner circumference of the holding holder 12 is four in FIG.
It is not limited to this as long as a ring-shaped holding surface can be formed.

【0025】次に具体的な操作手順を説明する。単結晶
の引上開始時には、サブ引上手段24は保持機構11を上方
に保持した状態で待機する。一方、メイン引上手段23の
先端に設けられた種結晶ホルダー10に種結晶9を取付け
て、この種結晶9をシリコン溶融液2の液面の中心部に
接触させる。その後メイン引上手段23を作動させて種結
晶9を回転させながらゆっくり上昇させ、ダッシュズネ
ック(種絞り部)8を形成させる。次いで、単結晶の引
上速度を遅くして単結晶の直径を増大させ径大部7を成
形し、そののち単結晶の直径を徐々に小さくし、くびれ
部5まで細めて断面形状が逆円錐状になる係合段部6を
形成する。
Next, a specific operation procedure will be described. At the time of starting the pulling of the single crystal, the sub pulling means 24 stands by while holding the holding mechanism 11 upward. On the other hand, the seed crystal 9 is attached to the seed crystal holder 10 provided at the tip of the main pulling means 23, and this seed crystal 9 is brought into contact with the center of the liquid surface of the silicon melt 2. Thereafter, the main pulling means 23 is operated to slowly raise the seed crystal 9 while rotating the seed crystal 9, thereby forming a dash neck (seed drawing portion) 8. Next, the diameter of the single crystal is increased by slowing down the pulling speed of the single crystal to form a large-diameter portion 7, and then the diameter of the single crystal is gradually reduced and narrowed down to the constricted portion 5, and the cross-sectional shape is inverted conical. An engaging step 6 is formed.

【0026】係合段部6を形成したのち、再び単結晶の
直径を増大させてショルダー4を形成し、その後引上速
度、回転速度を定常条件に調整して所定直径の単結晶ボ
ディ3の引上に移行する。
After forming the engaging step 6, the shoulder 4 is formed by increasing the diameter of the single crystal again, and thereafter, the pulling speed and the rotation speed are adjusted to the steady conditions to adjust the single crystal body 3 having a predetermined diameter. Move to lifting.

【0027】定常の単結晶の引上に移行後、引き上げら
れる単結晶の重量が一定の重量に達した時点、例えば、
単結晶ボディ3の長さが1mになる時点で、上方で待機
していた保持機構11を下降させる。その下降段階におい
て、前記図4で説明したように、保持レバー14は開いた
状態で単結晶の径大部7を通過させ、その後、単結晶の
ショルダー4によって押し上げられたプッシュロッドの
作用によって、保持レバー14は閉じた状態にする。
When the weight of the single crystal to be pulled reaches a certain weight after the transition to the steady single crystal pulling, for example,
When the length of the single crystal body 3 becomes 1 m, the holding mechanism 11 waiting above is lowered. In the descending stage, as described with reference to FIG. 4, the holding lever 14 is allowed to pass through the large diameter portion 7 of the single crystal in the open state, and thereafter, by the action of the push rod pushed up by the single crystal shoulder 4, The holding lever 14 is closed.

【0028】保持機構11の係合部材13で単結晶の係合段
部6を係合・把持したのち、サブ引上手段24は、メイン
引上手段23の引上速度と同調して保持機構11を上昇させ
る。
After the engaging step 13 of the single crystal is engaged and gripped by the engaging member 13 of the holding mechanism 11, the sub-pulling means 24 is synchronized with the pulling speed of the main pulling means 23. Raise 11

【0029】ここで、係合部材である保持レバー14で単
結晶を把持させて保持機構11を上昇させるのは、単結晶
の重量が一定の重量に達した以降、すなわち、少なくと
も引上工程の後半段階であればよい。
Here, the holding mechanism 11 is lifted by holding the single crystal by the holding lever 14 as an engaging member after the weight of the single crystal reaches a certain weight, that is, at least in the pulling step. The second half is sufficient.

【0030】メイン引上手段23とサブ引上手段24とを同
調して保持機構11を上昇させる際には、メイン引上手段
23のメインモーター25は速度制御で、サブ引上手段24の
サブモーター26はトルク制御とするのが望ましい。
When the holding mechanism 11 is raised by synchronizing the main pulling means 23 and the sub pulling means 24, the main pulling means 23
It is preferable that the main motor 25 is controlled by a speed control and the sub motor 26 of the sub pulling means 24 is controlled by a torque.

【0031】このような引上駆動モーターの制御方式を
採用することによって、単結晶の重量をサブ引上手段の
保持機構で分担することができる。したがって、引上駆
動モーターの制御系どうしの干渉を防止でき、引上速度
およびメインモーターとサブモーター間の負荷割合を正
確に制御ができ、ショックのない安定した単結晶引き上
げが可能になる。
By employing such a control method of the pulling drive motor, the weight of the single crystal can be shared by the holding mechanism of the sub pulling means. Therefore, interference between the control systems of the pulling drive motors can be prevented, the pulling speed and the load ratio between the main motor and the sub motor can be accurately controlled, and stable single crystal pulling without shock can be achieved.

【0032】[0032]

【発明の効果】本発明の単結晶引上装置によれば、単結
晶に設けられた係合段部での係合・把持を確実なものと
し、大重量の単結晶を引上げる場合であっても落下事故
を発生することなく、単結晶を安全に製造することがで
きる。しかも簡易な装置で適用でき、多大な設備費を必
要としない。
According to the single crystal pulling apparatus of the present invention, it is possible to secure the engagement and gripping at the engaging step provided on the single crystal and to pull a heavy single crystal. However, a single crystal can be safely manufactured without a fall accident. Moreover, it can be applied with a simple device, and does not require a large facility cost.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明装置の全体構成例を説明する縦断面図で
ある。
FIG. 1 is a longitudinal sectional view illustrating an example of the overall configuration of a device of the present invention.

【図2】図1のA−A矢視で示される保持機構およびエ
コライザーの横断面図である。
FIG. 2 is a cross-sectional view of the holding mechanism and the equalizer indicated by arrows AA in FIG.

【図3】図1のB−B矢視で示される保持機構に設けら
れる係合部材の構成例を説明する平面図である。
FIG. 3 is a plan view illustrating a configuration example of an engagement member provided in a holding mechanism indicated by arrows BB in FIG. 1;

【図4】保持機構の下降にともなって係合部材が旋回す
る動作を説明する図である。
FIG. 4 is a view for explaining an operation in which an engagement member turns as the holding mechanism descends.

【符号の説明】[Explanation of symbols]

1…坩堝、 2…溶融液、 3…単結晶ボディ 4…単結晶ショルダー、 5…くびれ部 6…係合段部、 7…径大部 8…ダッシュズネック(種絞り部) 9…種結晶、 10…種結晶ホルダー 11…保持機構、 12…保持ホルダー 13…係合部材、 14…保持レバー 15…回転レバー、 16…プッシュロッド 17…ストッパー、 18…エコライザー 19…ピン、 20…メインワイヤー、 21…サブワイヤー 22…引上機構、 23…メイン引上手段 24…サブ引上手段、 25…メインモーター 26…サブモーター DESCRIPTION OF SYMBOLS 1 ... Crucible, 2 ... Melt, 3 ... Single crystal body 4 ... Single crystal shoulder, 5 ... Constricted part 6 ... Engagement step part, 7 ... Large diameter part 8 ... Dashes neck (seed drawing part) 9 ... Seed crystal , 10 ... seed crystal holder 11 ... holding mechanism, 12 ... holding holder 13 ... engaging member, 14 ... holding lever 15 ... rotating lever, 16 ... push rod 17 ... stopper, 18 ... ecolizer 19 ... pin, 20 ... main wire , 21 ... sub wire 22 ... pulling mechanism, 23 ... main pulling means 24 ... sub pulling means, 25 ... main motor 26 ... sub motor

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】回転されつつ引上げられる単結晶に逆円錐
状の係合段部を形成させるメイン引上手段と、その単結
晶を把持する保持機構と、前記メイン引上手段の引上速
度と同調して前記保持機構を上昇させるサブ引上手段を
具備する単結晶引上装置であって、前記保持機構にはそ
の昇降にともなって所定の昇降位置で上下動するプッシ
ュロッドと、このプッシュロッドの上昇動作によって旋
回し前記単結晶の係合段部を係合・把持する係合部材と
が設けられていることを特徴とする単結晶引上装置。
1. A main pulling means for forming an inverted conical engagement step on a single crystal which is pulled while being rotated, a holding mechanism for gripping the single crystal, and a pulling speed of the main pulling means. What is claimed is: 1. A single crystal pulling device comprising a sub-pulling-up means for raising said holding mechanism in synchronism, wherein said holding mechanism includes a push rod which moves up and down at a predetermined raising and lowering position as said lifting mechanism moves up and down. A single crystal pulling device provided with an engaging member which is turned by the ascending operation of the above and engages and grips the engaging step of the single crystal.
【請求項2】上記メイン引上手段およびサブ引上手段は
ワイヤーの巻上、巻下によって独立して昇降可能とし、
さらにサブ引上手段は保持機構の傾き防止手段を介して
保持機構を昇降させることを特徴とする請求項1記載の
単結晶引上装置。
2. The main pulling means and the sub pulling means can be independently raised and lowered by winding and unwinding a wire.
2. The single crystal pulling apparatus according to claim 1, wherein the sub-pulling means raises and lowers the holding mechanism via a tilt preventing means of the holding mechanism.
JP8236361A 1996-09-03 1996-09-06 Single crystal pulling device Expired - Lifetime JP2990659B2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP8236361A JP2990659B2 (en) 1996-09-06 1996-09-06 Single crystal pulling device
DE19781966T DE19781966T1 (en) 1996-09-03 1997-08-29 Device for pulling single crystals
DE19781966A DE19781966B4 (en) 1996-09-03 1997-08-29 Single crystal pulling apparatus - includes puller to from stepped locked portion of crystal
US09/254,087 US6139633A (en) 1996-09-03 1997-08-29 Single crystal pulling apparatus
PCT/JP1997/003042 WO1998010125A1 (en) 1996-09-03 1997-08-29 Single crystal pulling apparatus
KR1019997001707A KR100310780B1 (en) 1996-09-03 1999-03-02 Single crystal pulling apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8236361A JP2990659B2 (en) 1996-09-06 1996-09-06 Single crystal pulling device

Publications (2)

Publication Number Publication Date
JPH1081582A JPH1081582A (en) 1998-03-31
JP2990659B2 true JP2990659B2 (en) 1999-12-13

Family

ID=16999667

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8236361A Expired - Lifetime JP2990659B2 (en) 1996-09-03 1996-09-06 Single crystal pulling device

Country Status (1)

Country Link
JP (1) JP2990659B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980079892A (en) * 1997-03-28 1998-11-25 모리 레이자로 Single crystal pulling device
JP3573021B2 (en) * 1999-09-29 2004-10-06 三菱住友シリコン株式会社 Crystal holding device
DE102006034433B4 (en) * 2006-07-26 2018-03-22 Crystal Growing Systems Gmbh Crystal pulling apparatus, supporting device and method for producing heavy crystals
CN117904706B (en) * 2024-03-19 2024-06-07 浙江晶盛机电股份有限公司 Crystal growth furnace

Also Published As

Publication number Publication date
JPH1081582A (en) 1998-03-31

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