JPH033638B2 - - Google Patents

Info

Publication number
JPH033638B2
JPH033638B2 JP17488083A JP17488083A JPH033638B2 JP H033638 B2 JPH033638 B2 JP H033638B2 JP 17488083 A JP17488083 A JP 17488083A JP 17488083 A JP17488083 A JP 17488083A JP H033638 B2 JPH033638 B2 JP H033638B2
Authority
JP
Japan
Prior art keywords
pulling
guide
pulling shaft
shaft
lateral vibration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP17488083A
Other languages
Japanese (ja)
Other versions
JPS6065789A (en
Inventor
Takao Takahashi
Shingo Hayashi
Hisataka Sugyama
Yoshiaki Tada
Toshio Ooishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Machine Co Ltd
Original Assignee
Toshiba Machine Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Machine Co Ltd filed Critical Toshiba Machine Co Ltd
Priority to JP17488083A priority Critical patent/JPS6065789A/en
Publication of JPS6065789A publication Critical patent/JPS6065789A/en
Publication of JPH033638B2 publication Critical patent/JPH033638B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30Mechanisms for rotating or moving either the melt or the crystal

Description

【発明の詳細な説明】 本発明は、CZ法による半導体引上機に係り、
特に引上軸としてワイヤまたはビードチエーンな
どの可とう性部材を用いたものの引上軸の横振れ
防止装置に関するものである。
[Detailed Description of the Invention] The present invention relates to a semiconductor pulling machine using the CZ method,
In particular, the present invention relates to a device for preventing lateral vibration of a pulling shaft in which a flexible member such as a wire or a bead chain is used as the pulling shaft.

半導体引上機は、引上げられた単結晶インゴツ
トの酸素濃度および比抵抗の分布特性を十分満足
させるため、引上軸を所定速度で回転させる必要
がある。この引上軸に前記のような可とう性部材
を用いた場合は、引上軸の回転が引上軸の長さに
よる固有振動数に影響され、ある回転数の範囲で
共振を起こして横振れを生ずるため、引上軸の途
中を回転可能に包囲するガイドを設けて、横振れ
を防止するようにした装置が提案されている。し
かしながら、このようなガイドを設けても、引上
チヤンバ内の圧力、温度やガスの流量などの条件
が変化すると、共振回転数が変化するためか、確
実に横振れを防止することができず、また、引上
軸に対するガイドの芯合わせを正確に行なわなけ
ればならない等の問題が生じた。
The semiconductor pulling machine needs to rotate the pulling shaft at a predetermined speed in order to fully satisfy the oxygen concentration and resistivity distribution characteristics of the pulled single crystal ingot. When a flexible member like the one described above is used for this pulling shaft, the rotation of the pulling shaft is affected by the natural frequency of the length of the pulling shaft, and resonance occurs within a certain rotational speed range, causing sideways movement. Because of the vibrations that occur, a device has been proposed in which a guide is provided to rotatably surround the pulling shaft in the middle to prevent lateral vibrations. However, even with such a guide, it is not possible to reliably prevent lateral vibration, probably because the resonance rotation speed changes when conditions such as pressure, temperature, and gas flow rate inside the pulling chamber change. Further, problems arose, such as the necessity of accurately aligning the guide with respect to the pulling shaft.

本発明の目的は、可とう性部材からなる引上軸
を、いかなる引上条件下においても横振れを生じ
させずに共振回転数近辺からそれ以上で回転させ
ることができ、また、熱変形などにより芯ずれを
生じ易い引上軸に対するガイドの支持に特別高度
な技術を用いることなく引上軸の横振れを確実に
防止できる装置を提供するにある。
It is an object of the present invention to be able to rotate a pulling shaft made of a flexible member at a speed from around the resonance rotation speed to above the resonance speed without causing lateral vibration under any pulling conditions, and to prevent thermal deformation. To provide a device that can reliably prevent lateral vibration of a pulling shaft without using particularly advanced technology to support a guide for the pulling shaft, which is prone to misalignment.

かかる目的を達成するための本発明は、可とう
性部材を引上軸として用いる半導体引上機の前記
引上軸の途中を直接または間接的に回転可能に包
囲するガイドを設けてなる引上軸横振れ防止装置
において、前記ガイドを引上軸に垂直な平面に沿
つて所定範囲にわたり移動自在に支持したことを
特徴とするものである。
To achieve this object, the present invention provides a semiconductor pulling machine that uses a flexible member as a pulling shaft, and is provided with a guide that rotatably surrounds the pulling shaft directly or indirectly. The shaft lateral vibration prevention device is characterized in that the guide is supported movably over a predetermined range along a plane perpendicular to the pulling shaft.

以下本発明の一実施例を示す第1図ないし第4
図について説明する。第1図において、10は引
上機本体で、密閉可能な構造になされ、下部はル
ツボ11および図示しない加熱装置などを内蔵し
た加熱チヤンバ10aを形成し、上部はルツボ1
1内の融液12から単結晶インゴツト13を引上
げるための引上チヤンバ10bを形成している。
本体10の上部には、巻上装置14が取付けられ
ている。巻上装置14のフレーム15はそれ自身
が前記本体10に回転可能に取付けられ、その下
部に固着されたプーリ16により、引上軸回転モ
ータ17からベルト18により回転を与えられる
ようになつている。前記フレーム15にはワイヤ
またはビートチエーンなどの可とう性を有する引
上軸19を巻上げるための巻上ドラム20が設け
られ、引上モータ21にて回転を与えられるよう
になつている。引上軸19の下端にはシード22
を取付けたシードチヤツク23が取付けられてお
り、該引上軸19の上端側はフレーム15に設け
た固定ガイド24により垂下位置を定められてい
る。
The following Figures 1 to 4 show one embodiment of the present invention.
The diagram will be explained. In FIG. 1, reference numeral 10 denotes the main body of the pulling machine, which has a hermetically sealed structure.The lower part forms a heating chamber 10a containing a crucible 11 and a heating device (not shown), and the upper part forms a heating chamber 10a containing a crucible 11 and a heating device (not shown).
A pulling chamber 10b for pulling up a single crystal ingot 13 from a melt 12 in the chamber 10 is formed.
A hoisting device 14 is attached to the upper part of the main body 10. The frame 15 of the hoisting device 14 is rotatably attached to the main body 10, and is rotated by a belt 18 from a hoisting shaft rotating motor 17 through a pulley 16 fixed to the lower part of the frame 15. . The frame 15 is provided with a hoisting drum 20 for hoisting a flexible hoisting shaft 19 such as a wire or a beat chain, and is rotated by a hoisting motor 21. A seed 22 is attached to the lower end of the pulling shaft 19.
A seed chuck 23 with a seed chuck attached thereto is attached, and the upper end side of the pulling shaft 19 has a hanging position determined by a fixed guide 24 provided on the frame 15.

引上チヤンバ10b内には、引上軸19と平行
に軸25が取付けられている。この軸25には、
第2図に示すような対をなすアーム26a,26
bが取付けられている。アーム26a,26bは
軸25に互いに旋回可能に取付けられ、バネ27
にて突起28a,28bが当接する位置に閉じら
れるようになつている。また、これらのアーム2
6a,26bは、シリンダなどの駆動部29にて
上下動されるロツド30にそれぞれ連結されたリ
ンク31a,31bにて開かれるようになつてい
る。
A shaft 25 is installed in the lifting chamber 10b in parallel with the lifting shaft 19. This shaft 25 has
A pair of arms 26a, 26 as shown in FIG.
b is installed. The arms 26a and 26b are attached to the shaft 25 so as to be able to rotate with respect to each other, and are supported by a spring 27.
At this point, the protrusions 28a and 28b are brought into contact with each other. Also, these arm 2
6a and 26b are opened by links 31a and 31b respectively connected to rods 30 that are moved up and down by a drive unit 29 such as a cylinder.

アーム26a,26bは、前記のように閉じた
とき、引上軸19に係合されているリング状のガ
イド32を先端で支持し、開いたときには、引上
げられてくる単結晶インゴツト13に干渉しない
ように引上軸19から十分遠ざかるようになされ
ている。
When the arms 26a and 26b are closed as described above, they support the ring-shaped guide 32 engaged with the pulling shaft 19 at their tips, and when opened, they do not interfere with the single crystal ingot 13 being pulled up. It is made to be sufficiently far away from the pulling shaft 19 as shown in FIG.

前記ガイド32は、第3図および第4図に拡大
して示すように、そのつば32aがアーム26
a,26bの上面によつて支持され、下方に伸び
る胴部32bの周面はアーム26a,26bの対
向する凹所33a,33b内にすき間Sを有する
ように嵌入されている。
As shown enlarged in FIGS. 3 and 4, the guide 32 has a collar 32a that is connected to the arm 26.
The peripheral surface of the body 32b, which is supported by the upper surfaces of the arms 26a and 26b and extends downward, is fitted into the opposing recesses 33a and 33b of the arms 26a and 26b with a gap S therebetween.

次いで本装置の作用について説明する。引上開
始に先立つて、駆動部29、ロツド30によりリ
ンク31a,31bを作動させてアーム26a,
26bを開き、シード22を取付けた引上軸19
にあらかじめ係合されているガイド32をアーム
26a,26bの凹部33a,33b内に嵌入さ
せて該アーム26a,26bを閉じる。
Next, the operation of this device will be explained. Prior to the start of lifting, the links 31a and 31b are actuated by the drive unit 29 and the rod 30 to move the arms 26a and 31b.
26b is opened and the pulling shaft 19 with the seed 22 attached
The guides 32, which have been previously engaged, are fitted into the recesses 33a, 33b of the arms 26a, 26b to close the arms 26a, 26b.

次いて、シード22をルツボ11内の融液12
に接触させ、引上軸回転モータ17によりフレー
ム15を回転させて引上軸19を回転させ、単結
晶インゴツト13を育成していく。このとき、引
上軸19は、途中に係合されているガイド32に
より横振れを防止される。
Next, the seeds 22 are added to the melt 12 in the crucible 11.
The frame 15 is rotated by the pulling shaft rotating motor 17, and the pulling shaft 19 is rotated to grow the single crystal ingot 13. At this time, the pulling shaft 19 is prevented from wobbling laterally by the guide 32 that is engaged in the middle.

なお、引上軸19の共振周波数fは なる式で表わされるが、この(1)式におけるlは横
振れに対する支点であるガイド32からシードチ
ヤツク23までの実際の引上軸19の長さでな
く、前記支点からシードチヤツク23、シード2
2および単結晶インゴツト13を含めた重心位置
Gまでの距離である。ただし、(1)式におけるgは
重力加速度である。
Note that the resonant frequency f of the pulling shaft 19 is However, l in this equation (1) is not the actual length of the pulling shaft 19 from the guide 32, which is the fulcrum against lateral vibration, to the seed chuck 23, but the length of the pulling shaft 19 from the fulcrum to the seed chuck 23, the seed chuck 23,
2 and the center of gravity position G including the single crystal ingot 13. However, g in equation (1) is the gravitational acceleration.

そこで、前記のようなガイド32がなく、単に
上端の固定ガイド24のみで引上軸19を保持し
た場合には、前記lは引上げ開始時には最も長
く、引合げが進むに連れて次第に短かくなつてい
くため、前記共振周波数fに関係して定められる
引上軸19の許容回転数は低く押えられてしまう
が、前記ガイド32を設けることにより、lを短
かくして前記許容回転数を高めることができる。
Therefore, if there is no guide 32 as described above and the pulling shaft 19 is simply held by the fixed guide 24 at the upper end, the length l is the longest at the start of pulling and gradually becomes shorter as the pulling progresses. Therefore, the allowable rotation speed of the pulling shaft 19 determined in relation to the resonance frequency f is kept low, but by providing the guide 32, it is possible to shorten l and increase the allowable rotation speed. can.

しかしながら、前記ガイド32をアーム26
a,26bに完全に固定した場合には、引上軸1
9はガイド32内で回転させる必要があるため、
これらの間に若干のすき間があるためか、前記の
(1)式は完全にあてはまらず、加熱チヤンバ10a
および引上チヤンバ10b内の圧力、温度や、こ
れらの中に流される図示しない不活性ガスの流量
などの周囲条件が変化すると、横振れを生じ、所
期の目的を十分に達することができない。
However, when the guide 32 is
a, 26b, the pulling shaft 1
9 needs to be rotated within the guide 32,
Perhaps because there is a slight gap between these,
Equation (1) does not apply completely, and the heating chamber 10a
If the ambient conditions such as the pressure and temperature inside the pulling chamber 10b and the flow rate of an inert gas (not shown) flowing into the chamber 10b change, lateral vibration occurs and the intended purpose cannot be fully achieved.

ところが、本装置のようにガイド32とアーム
26a,26bとの間に第4図に示したようにす
き間Sを設け、ガイド32がアーム26a,26
bの上面に沿つて、引上軸19と垂直な平面内で
移動し得るように取付けておくと、横振れの発生
がなくなる。前記すき間Sの大きさは、実験によ
ると、軸25やアーム26a,26bが組立誤差
や運転中の熱変形によつて変化しても上方の固定
ガイド24に対してガイド32を鉛直線に置くこ
とができる値より若干大きく、通常はガイド32
が凹部33a,33b内で1mm程度動き得るよう
にしておけばよい。ガイド32とアーム26a,
26bとの間には、両者の材質や接触面の面状態
を考慮することなどにより、若干の摩擦力を生じ
てわずかなダンピング効果を生ずるようにしてお
くことが好ましい。
However, in this device, a gap S is provided between the guide 32 and the arms 26a, 26b as shown in FIG.
If it is mounted so that it can move along the upper surface of the drawing shaft 19 in a plane perpendicular to the pulling shaft 19, lateral vibration will not occur. According to experiments, the size of the gap S is such that even if the shaft 25 and the arms 26a, 26b change due to assembly errors or thermal deformation during operation, the guide 32 remains perpendicular to the fixed guide 24 above. Slightly larger than the value that can be used, usually guide 32
It suffices if it is possible to move about 1 mm within the recesses 33a and 33b. guide 32 and arm 26a,
26b, it is preferable to create a slight frictional force between the two and a slight damping effect by considering the materials of the two and the surface condition of the contact surfaces.

引上が進み、シードチヤツク23がガイド32
に近付いたならば、駆動部29を作動させ、ロツ
ド30、リンク31a,31bにてアーム26
a,26bを引上げられた単結晶インゴツト13
に干渉しないところまで開く。このとき、ガイド
32はシードチヤツク23上迄落下して支持され
る。以後、引上軸19は上方の固定ガイド24に
て支点が定められるが、このとき垂下している引
上軸19の長さは初期の長さに対して約半分にな
つているため、このときの許容回転数は比較的高
い。
As the pulling progresses, the seed chuck 23 moves to the guide 32.
When the robot approaches the arm 26, the drive unit 29 is activated and the rod 30 and links 31a and 31b move the arm 26.
Single crystal ingot 13 pulled from a and 26b
Open until it does not interfere with the At this time, the guide 32 falls onto the seed chuck 23 and is supported. Thereafter, the fulcrum of the pulling shaft 19 is determined by the upper fixed guide 24, but since the length of the hanging shaft 19 at this time is about half of the initial length, The allowable rotation speed is relatively high.

本実施例では、ガイド32を1つだけ設けた例
を示したが、引上軸19に沿つて複数個設けてお
き、引上げの進行に伴なつてアーム26a,26
bを順次開いていく方式や、またガイド32を引
上げの進行に伴ない軸25に沿つて次第に上昇さ
せるようにすれば、許容回転数を一層高めること
ができる。また、アーム26a,26bの開閉は
リンク31a,31bに限らず、アーム26a,
26bの間に入れたカム板による方式など種々の
方式を採用し得ることは言うまでもない。
Although this embodiment shows an example in which only one guide 32 is provided, a plurality of guides 32 are provided along the pulling shaft 19, and as the pulling progresses, the arms 26a, 26
The permissible rotational speed can be further increased by sequentially opening the guide 32 or by gradually raising the guide 32 along the shaft 25 as the pulling progresses. Further, the opening and closing of the arms 26a, 26b is not limited to the links 31a, 31b;
It goes without saying that various methods can be adopted, such as a method using a cam plate inserted between 26b.

以上述べたように本発明によれば、可とう性材
料からなる引上軸の共振などによる横振れをより
確実に押えることができ、ガイドは引上軸と垂直
な平面に沿つて移動し得る構造であるため、それ
を支持するアームなどの部材の構造や組立に特別
な技術を用いる必要がない等の効果が得られる。
As described above, according to the present invention, it is possible to more reliably suppress the lateral vibration caused by resonance of the pulling shaft made of a flexible material, and the guide can move along a plane perpendicular to the pulling shaft. Because of this structure, it is advantageous that there is no need to use special techniques for the structure or assembly of members such as arms that support it.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例を示す一部破断概要
図、第2図は第1図の−線による断面図、第
3図は第2図のA部拡大図、第4図は第3図の
−線による断面図である。 10……引上機本体、11……ルツボ、13…
…単結晶インゴツト、14……巻上装置、19…
…引上軸、25……軸、26a,26b……アー
ム、29……駆動部、31a,31b……リン
ク、32……ガイド。
Fig. 1 is a partially cutaway schematic diagram showing an embodiment of the present invention, Fig. 2 is a sectional view taken along the - line in Fig. 1, Fig. 3 is an enlarged view of section A in Fig. 2, and Fig. 4 is a cross-sectional view taken along the - line in Fig. 1. FIG. 3 is a sectional view taken along the - line in FIG. 3; 10... Main body of the pulling machine, 11... Crucible, 13...
...Single crystal ingot, 14...Hoisting device, 19...
...Lifting shaft, 25... Axis, 26a, 26b... Arm, 29... Drive section, 31a, 31b... Link, 32... Guide.

Claims (1)

【特許請求の範囲】 1 可とう性部材を引上軸として用いる半導体引
上機の前記引上軸の途中を直接または間接的に回
転可能に包囲するガイドを設けてなる引上軸横振
れ防止装置において、前記ガイドを引上軸に垂直
な平面に沿つて所定範囲にわたり移動自在に支持
したことを特徴とする半導体引上機における引上
軸横振れ防止装置。 2 ガイドが引上軸に沿つて移動可能に設けられ
ている特許請求の範囲第1項記載の半導体引上機
における引上軸横振れ防止装置。 3 ガイドが引上軸に沿つて複数個着脱可能に取
付けられている特許請求の範囲第1項記載の半導
体引上機における引上軸横振れ防止装置。 4 ガイドを支持する部材が引上軸に対して対称
的に開閉可能に形成されている特許請求の範囲第
1、2または3項記載の半導体引上機における引
上軸横振れ防止装置。 5 ガイドとこれを引上軸に垂直な平面に沿つて
移動自在に支持する部材との間の前記平面に沿う
方向の移動に対し摩擦力によるダイピング効果を
持たせるようにガイドを支持した特許請求の範囲
第1、2、3または4項記載の半導体引上機にお
ける引上軸横振れ防止装置。
[Scope of Claims] 1. A device for preventing lateral vibration of a pulling shaft of a semiconductor pulling machine using a flexible member as a pulling shaft, which is provided with a guide that rotatably surrounds the midway of the pulling shaft, directly or indirectly. 1. A pulling shaft lateral vibration prevention device for a semiconductor pulling machine, characterized in that the guide is movably supported over a predetermined range along a plane perpendicular to the pulling shaft. 2. A pulling shaft lateral vibration prevention device in a semiconductor pulling machine according to claim 1, wherein the guide is provided movably along the pulling shaft. 3. A pulling shaft lateral vibration prevention device in a semiconductor pulling machine according to claim 1, wherein a plurality of guides are detachably attached along the pulling shaft. 4. A pulling shaft lateral vibration prevention device in a semiconductor pulling machine according to claim 1, 2 or 3, wherein the member supporting the guide is formed to be openable and closable symmetrically with respect to the pulling shaft. 5. A patent claim in which the guide is supported so as to have a dipping effect due to frictional force against movement in the direction along the plane between the guide and a member that supports the guide so as to be movable along the plane perpendicular to the pulling axis. A pulling shaft lateral vibration prevention device in a semiconductor pulling machine according to item 1, 2, 3 or 4.
JP17488083A 1983-09-21 1983-09-21 Apparatus for preventing lateral oscillation of pulling shaft of semiconductor pulling device Granted JPS6065789A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17488083A JPS6065789A (en) 1983-09-21 1983-09-21 Apparatus for preventing lateral oscillation of pulling shaft of semiconductor pulling device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17488083A JPS6065789A (en) 1983-09-21 1983-09-21 Apparatus for preventing lateral oscillation of pulling shaft of semiconductor pulling device

Publications (2)

Publication Number Publication Date
JPS6065789A JPS6065789A (en) 1985-04-15
JPH033638B2 true JPH033638B2 (en) 1991-01-21

Family

ID=15986271

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17488083A Granted JPS6065789A (en) 1983-09-21 1983-09-21 Apparatus for preventing lateral oscillation of pulling shaft of semiconductor pulling device

Country Status (1)

Country Link
JP (1) JPS6065789A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62171987A (en) * 1986-01-22 1987-07-28 Komatsu Denshi Kinzoku Kk Cz single crystal production apparatus and production method
JPH0747520B2 (en) * 1986-04-22 1995-05-24 三菱マテリアル株式会社 Single crystal pulling device
JPH0791149B2 (en) * 1987-01-09 1995-10-04 九州電子金属株式会社 Single crystal silicon swing width detection method in CZ furnace
JPH02279586A (en) * 1989-04-18 1990-11-15 Shin Etsu Handotai Co Ltd Mechanism for stopping wire swing of single crystal pulling-up device
US5089239A (en) * 1989-04-18 1992-02-18 Shin-Etsu Handotai Company Limited Wire vibration prevention mechanism for a single crystal pulling apparatus

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JPS6065789A (en) 1985-04-15

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