JPS58110034A - Vertical vapor phase epitaxial device - Google Patents

Abstract

PURPOSE:To perform vapor phase epitaxy by a method wherein a vertical furnace body is held in a housing, and a reaction tube having a freely open and closed vertical gas inlet and outlet at the upper end is accommodated in the furnace body, and a substrate holder is freely rotated and ascended an well as descended. CONSTITUTION:A substrate holder 3 is loaded at the upper part of a box under N2 atmosphere and is inserted in a reaction tube 43 with a mechanism 80. A furnace body is pushed up together with the reaction tube 43 with a hydraulic mechanism 60, and a manifold 45 is pressed to the furnace body. Furthermore, an opening section is closed with a cover 65 through a mechanism 73, and reaction gas is supplied 51 to rotate 71 the holder 3 in the reaction tube 43. The mechanism 73 is connected to a screw feed mechanism 80 with a supporting arm 65 and is ascended as well as descended. After epitaxial formation, the furnace body is descended to contact with a manifold 47 and to exhaust the reaction gas. When the holder 3 is accommodated or taken out with the mechanism 80, a semicircular shield plate 98 instead of the cover 65 is operated to prevent gas or heat from radiation. This constitution easily forms the temperature distribution of the reaction tube and can uniformly smooth gas flow. An epitaxial device with easy ascent and descent and rotation of the holder 3 and requiring a small occupied floor area is obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to a vapor phase epitaxial apparatus for performing vapor phase epitaxial growth on a substrate of gallium garnet or silicon as a material for magnetic bubbles, for example.

(2) Background of the Technology There are generally two known epitaxial growth methods: liquid phase epitaxial growth and vapor phase epitaxial growth. The present invention relates to the latter, that is, an epitaxial growth apparatus applied to vapor phase epitaxial growth. Chiru.

(3) Prior art and problems Currently, all the diffusion furnace type vapor phase epitaxial devices proposed and implemented are horizontal types, and there are no vertical type devices. However, in the case of a horizontal furnace, not only is it undesirable because it requires a large floor area, but also the holder that holds the substrate is located on the bottom wall of the reaction tube. The disadvantage was that the flow of gas (gas) became non-uniform, making it difficult to obtain the designed temperature distribution. Further, it is desirable to rotate the substrate in order to uniformly perform epitaxial growth 1 on the substrate within t*, F, but in the case of a horizontal lid, the mechanism for rotating the substrate has to be complicated.

(4) Another object of the invention is to provide a completely new vertical vapor phase epitaxial furnace in order to eliminate all of these problems. All the drawbacks of the above-mentioned scraper furnaces are solved by the vertical epitaxial apparatus of the present invention.

(5) Structure of the Invention In order to achieve the above-mentioned object, the present invention provides a reaction tube with an upright gas inlet/outlet whose upper end can be opened and closed, a vertical furnace body for holding the reaction tube, and A vertical vapor phase epitaxial apparatus having a rotatable and movable substrate holder which is located above a tube and which carries a substrate to be epitaxially grown into and out of the reaction tube, and an actuator which is held in a furnace body and which rotates and moves the substrate holder up and down. is provided.

(6) Embodiments of the Invention Preferred embodiments of the invention will now be described with reference to the accompanying drawings.

A substrate (wafer) 1 to be subjected to vapor phase epitaxial growth is held on a multilayer ring support 5 of a basket (holder) 3 as shown in FIG. 1, for example.

A hook 7 is formed at the upper end of the basket 3, and is suspended and supported from a substrate holder, which will be described later.

A vertical vapor phase epitaxial device according to the present invention.

The housing 11 has a loading section for loading the basket 3 in its lower half, and a furnace section for accommodating the furnace body 13 in its lower half. A double-opening door 19 with an enlarged window 17 in the loading part is added so as to be openable and closable by a hinge 21, making it possible to load the basket 3 from the outside. 23 is the handle of door 19. Housing 1
Nitrogen becomes gas in the interior 9 spaces of the upper half of 1.
Make sure that the inner walls of the reaction tube, holder, wafer, etc. do not come into contact with hydrogen or water. Instead of the phoneme gas, an inert gas such as Alfongame may be filled. A lighting device 25 such as a fluorescent light is provided in the box depending on the membership fee. A rotary arm 29 is rotatably supported on a shaft 27 at the top of the housing 11. The zero-rotation arm 29 has a motor 33, and the motor 33 rotates the flap body 3 via a rope 35.
1 is telescopically suspended from an arm 29 in a pulley manner.

The rotary arm 29 can rotate about the axis 27 to a virtual line position 29' in FIG. 3.

The furnace body 13 may be a normal heating furnace having a built-in electric heater 41, and a reaction material 43 can be placed inside.

Manifolds 45 and 47 are attached to the upper and lower openings of the reaction tube 43, and a gas introduction tube 51 is attached to the upper manifold 45.
Gas exhaust pipes 53 are connected to the lower manifold 47, respectively. All gases such as carrier gas, reaction gas, raw material gas, etc. are supplied into the reaction tube 43 through the gas introduction pipe 51t, and are discharged from the discharge pipe 53. The gas inlet pipe 51 is connected to a gas source, and the gas discharge pipe 53 is connected to a discharge pump 55. The lower manifold 47 is supported by a frame 57 fixed to the furnace body 13.

A flange portion 59 is provided at the upper end of the reaction tube 43, and by pressing the flange portion 59 against the upper manifold 45, the reaction tube 43 can be brought into close contact with the upper manifold 45. In this way, convert reaction t43 into Dobe manifold 4.
The housing 11 is provided with a floating mechanism 60 for slightly pushing the reactor body 13 upward in order to bring the reactor body 13 into close contact with the reactor body 143. The floating mechanism 60 is installed, for example, from below IflK under the flange portion 61 provided on the furnace body 13 by a compressor or the like. A fluid pressure flotation mechanism that pushes the furnace body 13 upward by feeding air or hydraulic pressure through a pump 63 or the like may be used. Upper manifold 45 is passke, t3t
- It has a cylindrical shape with an open top end so that a person can draw it from above into the reaction e#13. Upper manifold 4
This open upper end of the actuator 5 is closed by a disk-shaped cover or cap 65 that is firmly attached to the first actuator 73 having the motor 71. The actuator 73 is connected to the rotational output shaft of the motor 71. It has a hanger 7o, on which the hook 7 of the basket 3 is suspended.

The basket 3 is rotated by the motor 71 within the reaction tube 43 so as not to come into contact with the inner wall of the reaction tube 43. A support arm 67 is fixed to the 17th cut unit 73, and the outer end of this support arm 67 is connected to a nut member 8 screwed onto a feed screw shaft 83, which generally constitutes an actuator sot.
Fixed to 1. The screw shaft 83 is connected to a rotation output shaft of a motor 850 held in the housing 11, and the rotation of the screw shaft 83 causes the nut member 81, and thus the first actuator 73, to move up and down. In this way, the basket 3 is rotated by the first actuator 3 and moved up and down by the second actuator 80. Preferably, an endless curtain 90 rotatably supported by rollers 91 is added to the support arm "67, and freely rotates endlessly as the support arm 67 moves up and down.

The curtain 90 is provided to prevent lubricating oil and the like from the second actuator portion from scattering into the nitrogen gas space.

When the second actuator 80 is activated and the basket 3 is pulled up together with the first actuator 73 before the epitaxial growth is completed, the character f65 separates from the upper manifold 45, and gas and heat inside the reaction tube are released from the upper end opening of the upper manifold 45. Run away. To prevent this, the housing 11 is provided with a shutter mechanism as shown in FIG. 5 at the same height as the cap 65. The shutter mechanism consists of a pair of semi-circular shutter tazolates 96.96 connected to a gear wheel 97.97 by a respective arm 98.98.

One gear 97 is a driving gear connected to a motor (not shown), and the other gear 97 is a driven gear meshing with this driving gear. By doing this, shutter play)
96.96 is opened and closed, and when it is closed, the upper end opening of the upper manifold 45 can be closed instead of the cap 65. In FIG. 5, reference numeral 84 indicates a pair of guide rods extending parallel to the screw shaft 83, which are used to move the support arm 67 up and down without vibration.

The motors of the l/I, 1 actuator, 27th actuator, and jet mechanism are connected to the control panel 12 of the housing 11.
It is properly controlled by an electrical control circuit built into the unit.

7 Each switch (or dial) 16 of the analogue 14 is a control switch for these motors.In addition, the control panel 12 is also conventionally provided with control equipment necessary for an epitaxial furnace with a vacuum gauge of 18%.e Reaction tube 43 It is necessary to make it removable for cleaning. For this reason, in the present invention, a guide rail 20 is provided at the bottom of the furnace body 11, and a roller 22 that moves on the guide rail 20 is provided at the bottom of the furnace body 13. The roller 22 is slightly lifted from the guide rail 20 when the flotation mechanism 60 is activated, but when the flotation device $60 is released, it is positioned on the guide rail 20 by the weight of the furnace body. Further, a support guide rail 30 is provided on the extension line of the guide rail 20 so that the reaction tube can be pulled out of the Howsong together with the furnace body. The auxiliary guide rail 30 is preferably connected to the mounting 1 via a pin 32.
1 so as to be rotatably supported, and can stand up on its own and stand along the housing 11 when not in use.

When the furnace body 13 is pulled out along the auxiliary guide rail 30 to the 13' position shown in Fig. 3, the hook body located at 31' is lowered in a pulley manner by the operation of the motor 33, and the warping tube 43 is pulled out.
It is enough to engage the upper end of the
It is convenient to grasp the flange portion 59 of the reaction tube 43 using a suitable jig as shown at 0. In this way, by pulling up the reaction tube 43 onto the flap body 31, it can be easily removed from the furnace body 13.

(7) Effects of the Invention According to the vertical vapor phase epitaxial apparatus as described above, the basket 3 and therefore the wafer 1 can be positioned on the center line of the reaction tube, and the gas flow becomes uniform and smooth. Further, the basket 3 and therefore the wafer 1 can be rotated and lowered very easily. The temperature distribution in the reaction tube is also 90%. In history, the floor space is much smaller than the horizontal W (D device).

[Brief explanation of drawings]

Fig. 181 is a perspective view showing an example of a basket for holding a substrate wafer, Fig. 2 is an overall overview and perspective view of the vertical single-air taxial apparatus according to the present invention, and Fig. 3 is a right side view of Fig. 2. ,
FIG. 4 is a diagram showing the internal structure of FIG. 2, and FIG. 5 is a plan view of the shutter mechanism. 1... Wafer, 3... Basket (holder), 1
DESCRIPTION OF SYMBOLS 1... Housing, 13... Furnace body, 43... Reaction tube, 73.80... Actuator. Figure 1 Figure 21!1 33 -35 Figure 3 Figure 4 Figure 25 Figure 5

Claims (1)

[Claims] 1. A reaction tube with an upright gas inlet/outlet whose upper end can be opened and closed; a vertical furnace body that holds the reaction tube; a no-uji puffer that holds the furnace body; A vertical vapor phase epitaxial apparatus includes a rotatable and movable substrate holder that carries a substrate to be epitaxially grown into and out of a reaction tube, and an actuator that is held in a housing and rotates and moves the substrate holder up and down.