JPS63319287A - Single crystal pulling up device - Google Patents

Abstract

PURPOSE:To continuously produce a single crystal and to improve the production efficiency of the title single crystal pulling up device by rotating plural pulling up chambers, and successively pulling up a single crystal from a crucible device through the pulling up hole of the pulling up furnace. CONSTITUTION:The inside of the pulling up furnace 20 is evacuated 26, an inert gas is supplied, and then a raw material 61 is supplied 64 in the outer vessel 42 of the quartz crucible 42. One of the pulling up chambers 70 is simultaneously rotated to a pulling up station ST1, and a pulling up wire 74 is lowered toward the crucible device 40 kept at an adjusted vacuum. A seed crystal held 73 by the wire 74 is dipped in the raw material melt 61 in the inner vessel 42A of the crucible 42, and then slowly wound up in the direction B to pull up and grow a single crystal 90. The single crystal 90 is then pulled up to a specified length, and placed in a main chamber body 71. The chamber 70 is then separated from the furnace 20 and rotated from the station ST1 to a pulling up station ST2, another chamber 70 placed at the station ST2 is rotated to the station ST1, a single crystal 90 is pulled up by the same operation as above, and the above-mentioned operation is repeated.

Description

Detailed Description of the Invention (1) Purpose of the Invention [Field of Industrial Application] The present invention relates to a single crystal pulling apparatus, and particularly to a single crystal pulling apparatus including a plurality of pulling chambers. It is.

[Prior Art] Conventionally, as shown in FIG. 2, this type of single crystal pulling apparatus includes a pulling station in which an open lower 1a located off a pulling chamber is connected to a pulling hole 23 of a pulling furnace. ST, the pulling wire 74 is lowered from the pulling chamber U, immersed in a molten raw material 61 similar to a seed crystal crucible device held in a seed crystal holder 73 at its tip, and then slowly pulled up into the hoisting member. The single-crystal concavity that has been grown by winding up the pulling wire 74 using the pulling wire 72 is housed in the chamber body 71 of the Pulling Chamber Co., Ltd., and is cooled with an inert gas.Then, the gate valve 25 is closed. While keeping the pulling furnace in an airtight state, the pulling chamber is separated from the lid 24 of the pulling furnace by the rotating device and rotated to the take-out station 5T2 (indicated by two diagonal lines) to remove the single crystal. A method was proposed that would take out the dent.

[Problems to be solved] However, in the conventional single crystal pulling apparatus, only one pulling chamber was included, so after pulling the same level as a single crystal, the pulling chamber was sufficiently closed. There is a drawback that it is not possible to use a drawing furnace that is cooled, and furthermore, it is not possible to improve the production efficiency of the single crystal concavity.

Therefore, in order to solve this drawback, the present invention aims to provide a single crystal pulling apparatus that includes a plurality of pulling chambers to continuously produce single crystals and improve production efficiency. .

(2) Structure of the Invention [Means for Solving the Problems] The means for solving the problems provided by the present invention is as follows. In the single crystal pulling apparatus for pulling up the single crystal by lowering the held pulling wire and immersing the seed crystal in the molten raw material of the crucible apparatus disposed inside the pulling furnace, A plurality of chambers are disposed relative to the rotating device, and the single crystal is pulled from the molten raw material of the crucible device by sequentially rotating the chambers so as to communicate with the pulling hole of the pulling furnace. ``Single crystal pulling device''.

[Function] Since the single crystal pulling apparatus according to the present invention includes a plurality of pulling chambers, the single crystal pulled from the pulling furnace is cooled in the pulling chamber, and is simultaneously The pulling chamber serves to pull up other single crystals from the pulling furnace, which in turn serves to improve the production efficiency of single crystals.

[Example] Next, the present invention will be specifically described with reference to the accompanying drawings.

FIG. 1 is a sectional view showing an embodiment of a single crystal pulling apparatus according to the present invention.

First, the configuration of an embodiment of the single crystal pulling apparatus according to the present invention will be described in detail.

10 is a single crystal pulling apparatus of the present invention;
A heating heater arranged inside the heater, a crucible device arranged inside the heating heater plate, and a crucible rotating which rotates and lowers the crucible device recess arranged below the lifting unit. It is arranged on the outside of the lifting device and the lifting device, and the raw material (for example, silicon material) 61 is placed in the crucible device.
A raw material supply device that supplies
.

A pulling station ST2 holding a plurality of lifting chambers U (hereinafter, two cases will be mainly explained) and a plurality of lifting chambers U and a pulling station ST2 different from the pulling station ST2 ST.

and a rotation device for rotating between the extraction station ST2 and the take-out station ST2.

The lifting station is placed against the furnace body 22 placed on the upper bottom plate 21 of the housing 52 that houses the base, that is, the crucible rotation lifting device, and the upper part of the furnace body 22. ST, and a lid body 24 having a pulling hole 23 that can communicate with a pulling chamber leak located at ST. A gate pulp 25 is disposed in the pulling hole 23, and by closing it, the inside of the pulling furnace can be made airtight. In addition, an exhaust pipe 26 is opened in the base 21 and communicated with a vacuum pump (not shown) as an exhaust means for evacuating the inside of the pulling furnace. In addition, the lid body 24 is provided with a gas supply pipe 27 for supplying inert gas (for example, argon gas) into the pulling furnace in the direction indicated by the arrow while the single crystal recess is being pulled and the gate valve 25 is closed. is installed.

The heater unit includes a cylindrical holding member 31 placed on the base 21 and a cylindrical heater held inside the holding member 31 and connected to an appropriate power source (not shown). member 32.

The crucible device includes a carbon crucible 41 placed on one end of a rotating shaft 51 of a crucible rotating and lifting device, and a quartz crucible 42 disposed within the carbon crucible 41 and containing a raw material 61. are doing. The quartz crucible 42 is connected to an inner tank 42A by a partition wall 42a having a communication hole 42b at the bottom.
and an outer tank 42B.

The view of the raw material supply device is that the raw material (for example, silicon material) 61
A raw material storage tank 62 for accommodating the raw material 61, and a lower opening 62a of the raw material storage tank 62, which is disposed at the lower part of the raw material storage tank 62, and a lower opening 62a of the raw material storage tank 62 for storing the raw material 61, and a pulling 1
A gate member 63 for maintaining the container in an airtight state, and a gate member 63 for passing the raw material (for example, silicon material) 61 dropped from the raw material storage tank 62 through the lid 24 to the outer tank 42 of the quartz crucible 42.
It includes a gutter member 64 for supplying water to A. The raw material storage tank 62 is brought into an airtight state when the gate member 63 is opened, and is designed to maintain the degree of vacuum during pulling.

The lifting chamber W includes a chamber body 71 having an open lower part 1a that communicates with a lifting hole 23 formed in a lid 24 of a lifting station ST, and an upper end portion of the chamber body 71. a winding member 72 disposed on the winding member 72;
It includes three pulling wires 74 arranged therein. A gas supply means (not shown) for supplying an inert gas (for example, argon gas) is disposed near the upper end of the chamber body 71 in order to cool the single crystal matrix and prevent oxidation. . A gate valve 75 is disposed in the open lower portion 1a of the chamber body 71, and when it is closed, it can be pulled out and the inside of the U to the upper chamber can be made airtight.

Further, near the lower end of the chamber body 71, there is provided a valve for evacuating the inside at least while the gate valve 75 is closed.
An exhaust pipe 76 is opened and communicated with a vacuum pump (not shown) as an exhaust means.

The rotating device has two sets of support arms 81A for supporting the two lifting shafts 0 and 70, respectively.

81B and 82A, 82B and support arms 81A, 8
1B, 82A, and 82B, and a rotating shaft 83 for holding and rotating the rotating shaft 83; The drive device 84 includes a drive device 84 for

Furthermore, the operation of an embodiment of the single crystal pulling apparatus according to the present invention will be explained in detail.

After placing the lid 24 of the lifting unit on the furnace body 22, the inside of the lifting unit is evacuated in the direction of arrow A through the exhaust pipe 26 using an appropriate evacuation means such as a vacuum pump to supply gas. A suitable inert gas is supplied via pipe 27. Furthermore, the gate member 63, which is equivalent to a raw material supply device, is opened, and the raw material 61 is supplied to the outer tank 42B of the quartz crucible 42 via the gutter member 64. In parallel with this, one side of the lifting chamber U is rotated to the lifting station ST using the rotating device, and the opening lower 1a can be communicated with the lifting hole 23 of the lid 24 of the first lifting chamber. At the same time, the inside of the pulling chamber is evacuated in the direction of arrow M through the exhaust pipe 76 using an appropriate evacuation means such as a vacuum pump, and an appropriate inert gas is supplied by a gas supply means. When the degree of vacuum inside the pulling furnace and pulling chamber U reaches an appropriate value, the Gate Harz 2
5 (or the gate valve 25.75 when the gate hartz 75 is not opened) and the pulling wire 74 is lowered toward the crucible device. At this time, the raw material 61 previously supplied to the crucible device is melted by the heater 30 . The seed crystal held in the seed crystal holder 73 of the pulling wire 74 reaches the molten raw material 61 of the crucible device, that is, the inner tank 42A of the quartz crucible 42, is immersed therein, and is then slowly rolled in the direction of arrow B. Upper member 72
The winding can be started by . This allows the single crystal to be pulled and grown.

During pulling of the single crystal, the single crystal is cooled to prevent it from being oxidized, and the Si generated in the pulling furnace is cooled.
In order to efficiently eliminate gases such as n, CO2, and GO, an inert gas (for example, argon gas) is flowed down in the direction of arrow E in the pulling chamber. Furthermore, the inert gas flows into the pulling furnace from the pulling hole 23 in the direction of arrow F, is moved inside the pulling furnace in the direction of arrow G, and finally passes through the exhaust pipe 26. It is removed from the pulling furnace in the direction of arrow A. As a result, in addition to cooling and preventing oxidation of the single crystal, oxidation of the molten raw material 61 is prevented, and Sin, Co2. Gases such as GO are also efficiently eliminated.

At this time, at least during the pulling of the single crystal mark, in order to equalize the temperature and impurity concentration of the single crystallization interface of the single crystal, the crucible equipment is moved by the crucible rotating and lifting equipment.
Preferably, it is rotated slowly in the direction of arrow C, and raised and lowered in the direction of arrow C in order to maintain the liquid level of the molten raw material 61 at a predetermined position.

When the single crystal is pulled up to a predetermined length, the pulling wire 74 is rapidly pulled up in the direction of arrow B by the hoisting member 72. As a result, the pulling growth of the single crystal is completed, and the single crystals pulled and grown up to that point are completely accommodated in the chamber body 71 of the pulling chamber. After that, both gate valve 25 and gate valve 75 are closed.

After the gate valve 25.75 is closed, the rotating shaft 83 is raised in the direction of arrow H by the driving member 84 of the rotating device, and the lifting chamber is separated from the lid 24 of the lifting chamber. Next, the rotating shaft 83 is rotated in the direction of arrow 1 by the drive device 84, and further lowered in the direction of arrow J. As a result, the pulling chamber 4 located at the pulling station ST is rotated to the unloading station ST2, and the pulling chamber 4 located at the unloading station ST is rotated to the pulling station ST.

The pulling chamber cutter rotated to the take-out station ST2 is left still until the single crystal is sufficiently cooled. After the single crystals have been sufficiently cooled, the gate valve 75 is opened and the lower opening 1a is opened. The pulling wire 74 is unwound by the winding member 72, and the single crystal body is moved in the direction of the arrow. Therefore, the single crystal is lowered from the chamber body 71 of the pulling chamber, and the single crystal 90 can be removed from the seed crystal holder 73.

After removing the single crystal, a new seed crystal is attached to the seed crystal holder 73. Then the hoisting member 7
2, the pulling wire 74 is wound up and accommodated in the chamber body 71, and is kept on standby for rotation to the pulling station STs.

At this time, it is preferable to close the gate valve 75 and replace the inside of the pulling chamber 70 with an inert gas, since this can shorten the preparation time before starting the next single crystal pulling operation.

On the other hand, the pulling chamber U rotated to the pulling station ST repeats the above-described lifting operation.

By repeating the above operations, the single crystal pulling operation of the present invention is performed.
Both single crystals are continuously pulled and grown.

In the above description, the raw material 61 is continuously supplied from the raw material supply device arranged outside the pulling unit to the crucible device, but the present invention is not limited to this. It also includes a single-crystal pulling device in which the raw material supply device or the like is removed and the lid 24 is opened and closed intermittently to supply the raw material 61 similar to the crucible device.

Furthermore, although the gate valve 75 is disposed with respect to the open lower portion 1a of the pulling chamber 4, the present invention is not limited to this, and also includes a single crystal pulling apparatus in which the gate valve 75 is removed. are doing. In this case, Gateharz 2
5, before opening the exhaust pipe 76 or Gate Harz 2.
The inside of the pulling chamber W may be evacuated through an exhaust hole formed directly above the chamber 5 and filled with an inert gas.

Although the single crystal is further lowered and taken out from the "pulling chamber," the present invention is not limited to this. It also includes crystal pulling equipment.

(3) Effects of the Invention As is clear from the above, the single crystal pulling device according to the present invention has a seed crystal held at the tip from the pulling chamber that communicates with the pulling hole of the pulling furnace. A single crystal pulling device for pulling a single crystal by lowering a pulling wire and immersing the seed into the molten raw material of a crucible device disposed inside the pulling furnace, the device comprising: (i) A plurality of crystals are disposed on the rotating device, and are sequentially rotated to communicate with the pulling hole of the pulling furnace to pull the single crystal from the molten raw material of the crucible device. This has the effect that while the single crystal pulled from the pulling furnace is cooled in the pulling chamber, a new single crystal can be pulled from the pulling furnace in parallel by another pulling chamber. ii) It has the effect of improving single crystal production efficiency.

[Brief explanation of drawings]

FIG. 1 is a sectional view showing an embodiment of a single crystal pulling apparatus according to the present invention, and FIG. 2 is a sectional view showing a conventional example.

Claims (3)

[Claims] (1) A pulling wire with a seed crystal held at its tip is lowered from a pulling chamber that communicates with a pulling hole of a pulling furnace, and a crucible device disposed inside the pulling furnace is opened. In a single crystal pulling apparatus for pulling a single crystal by immersing the seed crystal in the molten raw material, a plurality of the pulling chambers are disposed relative to the rotating device, and the pulling chambers are sequentially rotated to lift the single crystal. A single crystal pulling device, characterized in that the single crystal is pulled from the molten raw material of the crucible device by communicating with the pulling hole of the crucible device. (2) The single crystal pulling apparatus according to claim (1), further comprising a gate valve disposed at the opening of the pulling chamber. (3) Claims (1) or (2) characterized in that the raw material is continuously supplied to the crucible device of the pulling furnace from a raw material supply device outside the pulling furnace. The single crystal pulling device described above.