JPH1192276A - Apparatus for producing semiconductor single crystal and production of semiconductor single crystal - Google Patents
Apparatus for producing semiconductor single crystal and production of semiconductor single crystalInfo
- Publication number
- JPH1192276A JPH1192276A JP27510697A JP27510697A JPH1192276A JP H1192276 A JPH1192276 A JP H1192276A JP 27510697 A JP27510697 A JP 27510697A JP 27510697 A JP27510697 A JP 27510697A JP H1192276 A JPH1192276 A JP H1192276A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- raw material
- single crystal
- auxiliary
- semiconductor single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
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- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、引上げＣＺ（Czoc
hralski ）法によりＳｉ（シリコン）などの半導体単結
晶を製造するための装置及び方法に関し、特に原料を補
助ルツボから引上げ用の石英ルツボに供給する装置及び
方法に関する。TECHNICAL FIELD The present invention relates to a pulling CZ (Czoc).
The present invention relates to an apparatus and method for manufacturing a semiconductor single crystal such as Si (silicon) by the hralski method, and more particularly to an apparatus and method for supplying a raw material from an auxiliary crucible to a quartz crucible for pulling.
【０００２】[0002]
【従来の技術】一般に、引上げＣＺ法による単結晶製造
装置では、グラファイトにより構成された高耐圧気密チ
ャンバ内を１０torr程度に減圧して新鮮なＡｒ（アルゴ
ン）などの不活性ガスを流すととともに、チャンバ内の
下方に設けられた石英ルツボ内の多結晶を加熱して溶融
し、この融液の表面に種結晶を上から浸漬し、種結晶と
石英ルツボを回転、上下移動させながら種結晶を引き上
げることにより、種結晶の下に上端が突出した円錐形の
上部コーン部と、円筒形のボディ部と下端が突出した円
錐形の下部コーン部より成る単結晶（いわゆるインゴッ
ト）を成長させるように構成されている。2. Description of the Related Art In general, in a single crystal manufacturing apparatus by the pulling CZ method, a high pressure-resistant airtight chamber made of graphite is decompressed to about 10 torr to flow a fresh inert gas such as Ar (argon). The polycrystal in the quartz crucible provided below the chamber is heated and melted, the seed crystal is immersed from above in the surface of this melt, and the seed crystal and the quartz crucible are rotated and moved up and down to form the seed crystal. By pulling up, a single crystal (a so-called ingot) consisting of a conical upper cone part whose upper end protrudes below the seed crystal, a cylindrical body part and a conical lower cone part whose lower end protrudes, is grown. It is configured.
【０００３】[0003]
【発明が解決しようとする課題】ところで、このような
単結晶製造装置では、石英ルツボ内で溶解される原料の
温度は、引上げ中より引上げ前の方が高く設定される。
また、製造される単結晶の径が大きくなると石英ルツボ
のサイズも大きくなるので、ある程度の歩留りを確保す
るため、原料の量も多くする必要があり、そのため大き
な熱量を原料溶解に要し、また、溶解時間も長くなる。
したがって、石英ルツボが高温により軟化して変形した
り劣化が激しくなるという問題点がある。In such a single crystal manufacturing apparatus, the temperature of the raw material dissolved in the quartz crucible is set higher before the pulling than during the pulling.
Also, as the diameter of the single crystal to be manufactured increases, the size of the quartz crucible also increases, so that it is necessary to increase the amount of the raw material in order to secure a certain yield, so that a large amount of heat is required for melting the raw material, and Also, the dissolution time becomes longer.
Therefore, there is a problem that the quartz crucible is softened due to high temperature and is deformed or deteriorated severely.
【０００４】なお、石英ルツボの劣化を防止するため
に、単結晶の引き上げ中の石英ルツボに対して溶融状態
の原料を補助ルツボから追加供給することにより石英ル
ツボ内の原料の量を減少させる方法が提案されている。
例えば特開昭５５−１３０８９４号公報には単結晶引上
げ用の石英ルツボに対して連通した補助ルツボ内で原料
を溶解し、これを連通管を介して追加供給する方法が提
案されている。また、特開昭５６−１６４０９７号公報
には、単結晶引上げ用の石英ルツボとは独立した補助ル
ツボを炉内に設け、原料を炉の外からこの補助ルツボに
供給して溶解し、補助ルツボ内の溶融原料を単結晶引上
げ用の石英ルツボに追加供給する方法が提案されてい
る。In order to prevent the deterioration of the quartz crucible, a method of reducing the amount of the raw material in the quartz crucible by additionally supplying a raw material in a molten state from the auxiliary crucible to the quartz crucible during the pulling of the single crystal. Has been proposed.
For example, Japanese Patent Application Laid-Open No. 55-130894 proposes a method in which a raw material is melted in an auxiliary crucible connected to a quartz crucible for pulling a single crystal, and the raw material is additionally supplied through a communication pipe. Japanese Patent Application Laid-Open No. 56-164097 discloses that an auxiliary crucible independent of a quartz crucible for pulling a single crystal is provided in a furnace, and raw materials are supplied from the outside of the furnace to the auxiliary crucible to be melted. There has been proposed a method of additionally supplying a molten raw material therein to a quartz crucible for pulling a single crystal.
【０００５】しかしながら、このような方法では、補助
ルツボを引上げ炉内に設けるので、補助ルツボが単結晶
引上げ用の石英ルツボや他の構成部材に干渉しないよう
に設計する必要があり、そのため単結晶引上げ用の石英
ルツボのサイズが制限されたり、炉そのものを大きくす
る必要があるという問題点がある。なお、石英ルツボの
サイズが制限されたり、炉そのものを大きくすると、単
結晶の歩留りが悪化したり、製造コストが高くなる。However, in such a method, since the auxiliary crucible is provided in the pulling furnace, it is necessary to design the auxiliary crucible so as not to interfere with the quartz crucible for pulling the single crystal and other constituent members. There are problems that the size of the quartz crucible for pulling is limited and that the furnace itself needs to be enlarged. If the size of the quartz crucible is limited or if the size of the furnace itself is increased, the yield of single crystals is reduced, and the manufacturing cost is increased.
【０００６】本発明は上記従来の問題点に鑑み、単結晶
引上げ用の石英ルツボのサイズが制限されたり、炉その
ものを大きくすることなく原料を補助ルツボから引上げ
用の石英ルツボに供給することができる半導体単結晶の
製造装置及び製造方法を提供することを目的とする。SUMMARY OF THE INVENTION In view of the above-mentioned conventional problems, the present invention provides a method for supplying a raw material from an auxiliary crucible to a quartz crucible for pulling without limiting the size of the quartz crucible for pulling a single crystal or enlarging the furnace itself. It is an object of the present invention to provide an apparatus and a method for manufacturing a semiconductor single crystal that can be manufactured.
【０００７】[0007]
【課題を解決するための手段】本発明は上記目的を達成
するために、引上げ炉の外部において補助ルツボ内に半
導体単結晶の原料をあらかじめ溶解し、引上げ炉内の石
英ルツボ内に供給するようにしたものである。すなわち
本発明によれば、引上げ炉内に載置された石英ルツボ内
の原料融液に種結晶を浸漬させた後に、これを引き上げ
ることにより半導体単結晶を製造する半導体単結晶の製
造装置において、半導体単結晶の原料をあらかじめ溶解
するため、前記引上げ炉の外部に配された補助ルツボ
と、前記補助ルツボ内の融液を前記引上げ炉内の石英ル
ツボ内に供給する手段とを、有することを特徴とする半
導体単結晶の製造装置が提供される。According to the present invention, in order to achieve the above object, a semiconductor single crystal raw material is previously melted in an auxiliary crucible outside a pulling furnace and supplied to a quartz crucible in the pulling furnace. It was made. That is, according to the present invention, a semiconductor single crystal manufacturing apparatus for manufacturing a semiconductor single crystal by immersing a seed crystal in a raw material melt in a quartz crucible placed in a pulling furnace and then pulling the seed crystal, An auxiliary crucible disposed outside the pulling furnace and means for supplying a melt in the auxiliary crucible into a quartz crucible in the pulling furnace, in order to previously melt the raw material of the semiconductor single crystal. An apparatus for manufacturing a semiconductor single crystal is provided.
【０００８】また本発明によれば、引上げ炉内に載置さ
れた石英ルツボ内の原料融液に種結晶を浸漬させた後
に、これを引き上げることにより半導体単結晶を製造す
る半導体単結晶の製造装置において、半導体の原料を溶
解するために前記引上げ炉の外部に載置された補助ルツ
ボと、前記補助ルツボを格納する補助ルツボ室と、前記
補助ルツボ室と前記引上げ炉内を気密に遮断可能であ
り、かつ遮断を解除して前記補助ルツボが前記補助ルツ
ボ室から前記引上げ炉内に移動可能な開閉手段と、前記
補助ルツボを前記補助ルツボ室から前記引上げ炉内に移
動させる補助ルツボ移動手段と、前記引上げ室に移動し
た前記補助ルツボ内の原料融液を前記石英ルツボに導く
原料移動手段とを、有することを特徴とする半導体単結
晶の製造装置が提供される。Further, according to the present invention, a semiconductor single crystal is manufactured by immersing a seed crystal in a raw material melt in a quartz crucible placed in a pulling furnace and then pulling the seed crystal to manufacture a semiconductor single crystal. In the apparatus, an auxiliary crucible placed outside the pulling furnace for melting the semiconductor material, an auxiliary crucible chamber for storing the auxiliary crucible, and an airtight shutoff between the auxiliary crucible chamber and the pulling furnace can be provided. Opening and closing means capable of releasing the auxiliary crucible from the auxiliary crucible chamber into the pulling furnace by releasing the shutoff, and auxiliary crucible moving means for moving the auxiliary crucible from the auxiliary crucible chamber into the pulling furnace. And a raw material moving means for guiding the raw material melt in the auxiliary crucible moved to the pulling chamber to the quartz crucible. That.
【０００９】また本発明によれば、引上げ炉内に載置さ
れた石英ルツボ内の原料融液に種結晶を浸漬させた後
に、これを引き上げることにより半導体単結晶を製造す
る半導体単結晶の製造方法において、前記引上げ炉の外
部に載置された補助ルツボにて半導体の原料を溶解する
ステップと、前記補助ルツボを前記引上げ炉内に移動さ
せるステップと、前記補助ルツボ内の原料融液を前記石
英ルツボに導くステップとを、有することを特徴とする
半導体単結晶の製造方法が提供される。According to the present invention, a semiconductor single crystal is manufactured by immersing a seed crystal in a raw material melt in a quartz crucible placed in a pulling furnace and then pulling the seed crystal to manufacture a semiconductor single crystal. Dissolving a semiconductor raw material in an auxiliary crucible placed outside the pulling furnace; moving the auxiliary crucible into the pulling furnace; and melting the raw material melt in the auxiliary crucible. And (c) leading to a quartz crucible.
【００１０】[0010]
【発明の実施の形態】以下、図面を参照して本発明の実
施の形態を説明する。図１は本発明に係る半導体単結晶
の製造装置の一実施形態における補助ルツボ格納容器の
接合状態を示す説明図、図２は溶融原料の供給状態を示
す説明図、図３は溶融原料の供給機構の一例を示す説明
図、図４は溶融原料の供給機構の他の例を示す説明図、
図５は補助ルツボ格納容器の運搬を示す説明図、図６は
引き上げ機構の運搬を示す説明図、図７は単結晶の育成
状態を示す説明図である。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is an explanatory view showing a joined state of an auxiliary crucible storage container in an embodiment of a semiconductor single crystal manufacturing apparatus according to the present invention, FIG. 2 is an explanatory view showing a supply state of a molten raw material, and FIG. Explanatory drawing showing an example of a mechanism, FIG. 4 is an explanatory view showing another example of a supply mechanism of a molten raw material,
FIG. 5 is an explanatory view showing transport of the auxiliary crucible storage container, FIG. 6 is an explanatory view showing transport of the lifting mechanism, and FIG. 7 is an explanatory view showing a growing state of a single crystal.
【００１１】図１において、引上げ炉１内には石英ルツ
ボ２が上下方向に移動可能に、かつ回転可能に配置さ
れ、石英ルツボ２の回りには石英ルツボ２内の原料を加
熱するためのヒータ３が配置されている。ここで、引き
上げ開始前の石英ルツボ２内の原料の量は、単結晶を製
造するために必要な総量より少なく、例えば０％である
（全く入っていない）。補助ルツボ格納容器１０内には
補助ルツボ１１が配置され、補助ルツボ１１内では単結
晶を製造するために必要な量から石英ルツボ２内の原料
の量を差し引いた分（例えば１００％）の量の原料が加
熱されて溶融している（溶融された原料融液を１２で示
す）。なお、引上げ炉１と補助ルツボ格納容器１０の内
部は、原料溶解中にはいずれも真空状態又は不活性ガス
充填状態に維持される。In FIG. 1, a quartz crucible 2 is disposed in a pulling furnace 1 so as to be vertically movable and rotatable, and a heater for heating the raw material in the quartz crucible 2 is provided around the quartz crucible 2. 3 are arranged. Here, the amount of the raw material in the quartz crucible 2 before the start of the pulling is smaller than the total amount necessary for manufacturing a single crystal, for example, 0% (does not contain at all). An auxiliary crucible 11 is disposed in the auxiliary crucible container 10, and an amount (for example, 100%) obtained by subtracting the amount of the raw material in the quartz crucible 2 from the amount required to produce a single crystal in the auxiliary crucible 11 Are heated and melted (the melted raw material melt is indicated by 12). Note that the inside of the pulling furnace 1 and the auxiliary crucible storage container 10 are maintained in a vacuum state or an inert gas filled state during the melting of the raw materials.
【００１２】引上げ炉１の上方には真空アイソレーショ
ンバルブ１ａが取り付けられ、補助ルツボ格納容器１０
の下方は真空アイソレーションバルブ１ａを介して真空
状態を維持した状態で引上げ炉１に対して結合可能に構
成されている。そして、補助ルツボ１１内の原料が溶融
すると、図１に示すように補助ルツボ格納容器１０が例
えば図５、図６に示すような旋回／昇降機構２０により
運搬され、真空アイソレーションバルブ１ａを介して引
上げ炉１に連結され、次いで図２に示すように連結状態
で補助ルツボ１１を矢印Ｍ１で示すように引上げ炉１内
に下降せしめ、次いで補助ルツボ１１内の原料融液１２
が矢印Ｍ２で示すように石英ルツボ２内に供給される。A vacuum isolation valve 1a is mounted above the pulling furnace 1, and an auxiliary crucible storage container 10 is provided.
Is configured to be connectable to the pulling furnace 1 while maintaining a vacuum state via a vacuum isolation valve 1a. Then, when the raw material in the auxiliary crucible 11 is melted, the auxiliary crucible storage container 10 is transported by, for example, a turning / elevating mechanism 20 as shown in FIGS. 5 and 6, as shown in FIG. 1, and is passed through the vacuum isolation valve 1a. Then, the auxiliary crucible 11 is lowered into the pulling furnace 1 as shown by an arrow M1 in the connected state as shown in FIG. 2, and then the raw material melt 12 in the auxiliary crucible 11 is connected.
Is supplied into the quartz crucible 2 as shown by an arrow M2.
【００１３】補助ルツボ１１内の原料融液１２を石英ル
ツボ２内に供給する構造としては、例えば図３に示すよ
うにこぼし口１１ａ付きのルツボ１１−１を傾動支点１
１ａの回りを傾動させることにより、こぼし口１１ａを
介して矢印Ｍ３で示すように原料融液（メルト）１２を
石英ルツボ２内に供給することができる。また、他の例
としては図４に示すように、底穴１１ｃ付きのルツボ１
１−２を用い、底穴１１ｃをストッパ棒１１ｄにより開
けることにより矢印Ｍ４で示すように原料融液１２を石
英ルツボ２内に供給することができる。As a structure for supplying the raw material melt 12 in the auxiliary crucible 11 into the quartz crucible 2, for example, as shown in FIG.
By inclining around 1a, the raw material melt (melt) 12 can be supplied into the quartz crucible 2 through the spill opening 11a as shown by an arrow M3. As another example, as shown in FIG. 4, a crucible 1 having a bottom hole 11c is provided.
Using 1-2, the raw material melt 12 can be supplied into the quartz crucible 2 as shown by the arrow M4 by opening the bottom hole 11c with the stopper rod 11d.
【００１４】補助ルツボ１１内の原料融液１２の供給が
完了すると、図５に示すような旋回／昇降機構２０によ
り補助ルツボ格納容器１０を支持して旋回、下降させる
ことにより、矢印Ｍ５、Ｍ６で示すように補助ルツボ格
納容器１０が引上げ炉１から切り離される。次いで、図
５、図６に示すように旋回／昇降機構２０により引き上
げ機構４を支持して上昇、旋回させることにより、矢印
Ｍ７、Ｍ８で示すように引き上げ機構４が真空アイソレ
ーションバルブ１ａを介して真空状態を維持した状態で
引上げ炉１の上に結合される。そして、図７に示すよう
に引き上げ機構４内のワイヤ５の先端の図示省略の種結
晶ホルダに種結晶７を取り付けて原料融液１２の表面に
上から浸漬し、種結晶７と石英ルツボ２を回転、上下移
動させながら種結晶７を引き上げることにより、種結晶
７の下に単結晶８を成長させる。When the supply of the raw material melt 12 in the auxiliary crucible 11 is completed, the auxiliary crucible storage container 10 is rotated and lowered by supporting the auxiliary crucible storage container 10 by a turning / elevating mechanism 20 as shown in FIG. The auxiliary crucible storage container 10 is separated from the pulling furnace 1 as shown by. Next, as shown in FIG. 5 and FIG. 6, the lifting / uplifting mechanism 20 is supported by the rotation / elevation mechanism 20 to ascend and rotate, whereby the lifting mechanism 4 is moved through the vacuum isolation valve 1a as shown by arrows M7 and M8. Then, it is joined on the pulling furnace 1 while maintaining a vacuum state. Then, as shown in FIG. 7, the seed crystal 7 is attached to a seed crystal holder (not shown) at the tip of the wire 5 in the pulling mechanism 4 and immersed from above into the surface of the raw material melt 12, and the seed crystal 7 The single crystal 8 is grown under the seed crystal 7 by pulling the seed crystal 7 while rotating and vertically moving.
【００１５】ここで、石英ルツボ２として２４インチの
ものを用い、単結晶８を製造するために必要な原料融液
１２の量を１００ｋｇとして、従来例のように全てを石
英ルツボ２内に３時間で供給して８時間で溶解した後に
単結晶８を引き上げたところ、石英ルツボ２の寿命は約
４０時間、単結晶８の無転位化率は約７０％であり、ま
た、原料供給中の液はねや融液の固化が頻発した。これ
に対し、全ての量を補助ルツボ１１内に３時間で供給し
て溶解させた後にこれを石英ルツボ２に供給し、石英ル
ツボ２での溶解時間を０時間にして単結晶８を引き上げ
たところ、石英ルツボ２の寿命は約６０時間、単結晶８
の無転位化率は約８０％であり、また、原料供給中の液
はねや融液の固化は殆ど発生しなかった。Here, a quartz crucible 2 having a size of 24 inches is used, and the amount of the raw material melt 12 necessary for producing the single crystal 8 is set to 100 kg. When the single crystal 8 is pulled up after being supplied for 8 hours and melted for 8 hours, the life of the quartz crucible 2 is about 40 hours, the dislocation-free ratio of the single crystal 8 is about 70%, Liquid splashing and solidification of the melt frequently occurred. On the other hand, the entire amount was supplied and melted in the auxiliary crucible 11 in 3 hours, and then supplied to the quartz crucible 2, and the melting time in the quartz crucible 2 was set to 0 hour, and the single crystal 8 was pulled up. However, the life of the quartz crucible 2 is about 60 hours, and the single crystal 8
The dislocation-free ratio was about 80%, and almost no liquid splashing or solidification of the melt occurred during the supply of the raw material.
【００１６】[0016]
【発明の効果】以上説明したように本発明によれば、引
上げ炉の外部において補助ルツボ内に半導体単結晶の原
料をあらかじめ溶解し、引上げ炉内の石英ルツボ内に供
給するようにしたので、単結晶引き上げ用の石英ルツボ
のサイズが制限されたり、炉そのものを大きくすること
なく原料融液を補助ルツボから引上げ用の石英ルツボに
供給することができる。As described above, according to the present invention, the raw material of the semiconductor single crystal is previously melted in the auxiliary crucible outside the pulling furnace and supplied to the quartz crucible in the pulling furnace. The raw material melt can be supplied from the auxiliary crucible to the quartz crucible for pulling without restricting the size of the quartz crucible for pulling the single crystal or enlarging the furnace itself.
【図１】本発明に係る半導体単結晶の製造装置の一実施
形態における補助ルツボ格納容器の接合状態を示す説明
図である。FIG. 1 is an explanatory view showing a joined state of an auxiliary crucible storage container in one embodiment of a semiconductor single crystal manufacturing apparatus according to the present invention.
【図２】溶融原料の供給状態を示す説明図である。FIG. 2 is an explanatory diagram showing a supply state of a molten raw material.
【図３】溶融原料の供給機構の一例を示す説明図であ
る。FIG. 3 is an explanatory diagram illustrating an example of a supply mechanism of a molten raw material.
【図４】溶融原料の供給機構の他の例を示す説明図であ
る。FIG. 4 is an explanatory view showing another example of a supply mechanism of a molten raw material.
【図５】補助ルツボ格納容器の運搬を示す説明図であ
る。FIG. 5 is an explanatory view showing transportation of an auxiliary crucible storage container.
【図６】引き上げ機構の運搬を示す説明図である。FIG. 6 is an explanatory view showing transportation of the lifting mechanism.
【図７】単結晶の育成状態を示す説明図である。FIG. 7 is an explanatory view showing a growing state of a single crystal.
１ 引上げ炉 １ａ 真空アイソレーションバルブ ２ 石英ルツボ ３ ヒータ ７ 種結晶 ４ 引き上げ機構 ５ ワイヤ ８ 単結晶 １０ 補助ルツボ格納容器 １１ 補助ルツボ １１ａ こぼし口 １１ｂ 傾動支点 １１ｃ 底穴 １１ｄ ストッパ棒 １１−１ こぼし口付きのルツボ １１−２ 底穴付きのルツボ １２ 原料融液 ２０ 旋回／昇降機構 DESCRIPTION OF SYMBOLS 1 Pulling furnace 1a Vacuum isolation valve 2 Quartz crucible 3 Heater 7 Seed crystal 4 Pulling-up mechanism 5 Wire 8 Single crystal 10 Auxiliary crucible storage container 11 Auxiliary crucible 11a Drop hole 11b Tilting fulcrum 11c Bottom hole 11d Stopper rod 11-1 With drop hole Crucible 11-2 Crucible with bottom hole 12 Raw material melt 20 Rotating / elevating mechanism
Claims (11)
原料融液に種結晶を浸漬させた後に、これを引き上げる
ことにより半導体単結晶を製造する半導体単結晶の製造
装置において、 半導体単結晶の原料をあらかじめ溶解するため、前記引
上げ炉の外部に配された補助ルツボと、 前記補助ルツボ内の融液を前記引上げ炉内の石英ルツボ
内に供給する手段とを、 有することを特徴とする半導体単結晶の製造装置。1. A semiconductor single crystal manufacturing apparatus for manufacturing a semiconductor single crystal by immersing a seed crystal in a raw material melt in a quartz crucible placed in a pulling furnace and then pulling the seed crystal. An auxiliary crucible arranged outside the pulling furnace for dissolving the crystal raw material in advance, and means for supplying a melt in the auxiliary crucible into a quartz crucible in the pulling furnace, Semiconductor single crystal manufacturing equipment.
原料融液に種結晶を浸漬させた後に、これを引き上げる
ことにより半導体単結晶を製造する半導体単結晶の製造
装置において、 半導体の原料を溶解するために前記引上げ炉の外部に載
置された補助ルツボと、 前記補助ルツボを格納する補助ルツボ室と、 前記補助ルツボ室と前記引上げ炉内を気密に遮断可能で
あり、かつ遮断を解除して前記補助ルツボが前記補助ル
ツボ室から前記引上げ炉内に移動可能な開閉手段と、 前記補助ルツボを前記補助ルツボ室から前記引上げ炉内
に移動させる補助ルツボ移動手段と、 前記引上げ室に移動した前記補助ルツボ内の原料融液を
前記石英ルツボに導く原料移動手段とを、 有することを特徴とする半導体単結晶の製造装置。2. A semiconductor single crystal manufacturing apparatus for manufacturing a semiconductor single crystal by immersing a seed crystal in a raw material melt in a quartz crucible placed in a pulling furnace and then pulling the seed crystal. An auxiliary crucible placed outside the pulling furnace to dissolve the raw material, an auxiliary crucible chamber for storing the auxiliary crucible, and an airtight shutoff between the auxiliary crucible chamber and the pulling furnace, and shutoff Opening / closing means capable of releasing the auxiliary crucible from the auxiliary crucible chamber into the pulling furnace by releasing the auxiliary crucible from the auxiliary crucible chamber into the pulling furnace; and the pulling chamber. A raw material moving means for guiding the raw material melt in the auxiliary crucible moved to the quartz crucible to the quartz crucible.
けられた前記補助ルツボ室と前記引上げ炉の間に取り付
けられ真空アイソレーションバルブであることを特徴と
する請求項２記載の半導体単結晶の製造装置。3. The semiconductor single crystal according to claim 2, wherein said opening / closing means is a vacuum isolation valve mounted between said auxiliary crucible chamber provided above said pulling furnace and said pulling furnace. Manufacturing equipment.
で水平方向に移動可能であることを特徴とする請求項２
又は３記載の半導体単結晶の製造装置。4. The auxiliary crucible chamber is movable horizontally in an upper part of the pulling furnace.
Or the apparatus for producing a semiconductor single crystal according to 3.
炉の上部で水平方向に移動可能であることを特徴とする
請求項４記載の半導体単結晶の製造装置。5. The apparatus for producing a semiconductor single crystal according to claim 4, wherein said means for pulling said seed crystal is movable in a horizontal direction above said pulling furnace.
記石英ルツボの上部に位置せしめ、その後前記補助ルツ
ボを、その中心軸に垂直な線を中心に回転させて、前記
補助ルツボの上端開口を介して前記原料融液を前記石英
ルツボに移動させるものである請求項２ないし５のいず
れか１つに記載の半導体単結晶の製造装置。6. The raw material moving means positions the auxiliary crucible above the quartz crucible, and thereafter rotates the auxiliary crucible about a line perpendicular to the center axis thereof to open the upper end opening of the auxiliary crucible. The apparatus for producing a semiconductor single crystal according to any one of claims 2 to 5, wherein the raw material melt is moved to the quartz crucible through the apparatus.
記石英ルツボの上部に位置せしめ、その後前記補助ルツ
ボの下端又はその近傍に設けられた開閉可能な開口部を
開いて、前記原料融液を前記石英ルツボに移動させるも
のである請求項２ないし５のいずれか１つに記載の半導
体単結晶の製造装置。7. The raw material moving means positions the auxiliary crucible above the quartz crucible, and thereafter opens an openable and closable opening provided at a lower end of the auxiliary crucible or in the vicinity thereof, and transfers the raw material melt. The apparatus for manufacturing a semiconductor single crystal according to any one of claims 2 to 5, wherein the apparatus is moved to the quartz crucible.
原料融液に種結晶を浸漬させた後に、これを引き上げる
ことにより半導体単結晶を製造する半導体単結晶の製造
方法において、 前記引上げ炉の外部に載置された補助ルツボにて半導体
の原料を溶解するステップと、 前記補助ルツボを前記引上げ炉内に移動させるステップ
と、 前記補助ルツボ内の原料融液を前記石英ルツボに導くス
テップとを、 有することを特徴とする半導体単結晶の製造方法。8. A method for manufacturing a semiconductor single crystal, wherein a seed crystal is immersed in a raw material melt in a quartz crucible placed in a pulling furnace and then pulled up to manufacture a semiconductor single crystal. Melting a semiconductor raw material with an auxiliary crucible placed outside the furnace; moving the auxiliary crucible into the pulling furnace; and guiding a raw material melt in the auxiliary crucible to the quartz crucible. A method for producing a semiconductor single crystal, comprising:
の上部に設けられた前記補助ルツボを格納する補助ルツ
ボ室と前記引上げ炉を連結するステップを有することを
特徴とする請求項８記載の半導体単結晶の製造方法。9. The semiconductor unit according to claim 8, wherein the step of moving includes a step of connecting the auxiliary crucible chamber provided in an upper part of the pulling furnace for storing the auxiliary crucible with the pulling furnace. Method for producing crystals.
ステップが前記補助ルツボを前記石英ルツボの上部に位
置せしめるステップと、その後前記補助ルツボを、その
中心軸に垂直な線を中心に回転させて、前記補助ルツボ
の上端開口を介して前記原料融液を前記石英ルツボに移
動させるステップとを有することを特徴とする請求項８
又は９記載の半導体単結晶の製造方法。10. The step of directing the raw material melt to the quartz crucible includes the step of positioning the auxiliary crucible above the quartz crucible, and then rotating the auxiliary crucible about a line perpendicular to the central axis thereof. Moving the raw material melt to the quartz crucible via an upper end opening of the auxiliary crucible.
Or a method for producing a semiconductor single crystal according to 9.
ステップが前記補助ルツボを前記石英ルツボの上部に位
置せしめるステップと、その後前記補助ルツボの下端又
はその近傍に設けられた開閉可能な開口部を開いて、前
記原料融液を前記石英ルツボに移動させるステップとを
有することを特徴とする請求項８又は９記載の半導体単
結晶の製造方法。11. The step of guiding the raw material melt to the quartz crucible includes the step of positioning the auxiliary crucible above the quartz crucible, and the opening and closing portion provided at or near the lower end of the auxiliary crucible. And moving the raw material melt to the quartz crucible. 10. The method of manufacturing a semiconductor single crystal according to claim 8, wherein
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27510697A JPH1192276A (en) | 1997-09-22 | 1997-09-22 | Apparatus for producing semiconductor single crystal and production of semiconductor single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27510697A JPH1192276A (en) | 1997-09-22 | 1997-09-22 | Apparatus for producing semiconductor single crystal and production of semiconductor single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1192276A true JPH1192276A (en) | 1999-04-06 |
Family
ID=17550839
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27510697A Withdrawn JPH1192276A (en) | 1997-09-22 | 1997-09-22 | Apparatus for producing semiconductor single crystal and production of semiconductor single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1192276A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006009802A2 (en) * | 2004-06-18 | 2006-01-26 | Memc Electronic Materials, Inc. | A melter assembly and method for charging a crystal forming apparatus with molten source material |
| US7344594B2 (en) | 2004-06-18 | 2008-03-18 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
| US7465351B2 (en) | 2004-06-18 | 2008-12-16 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
| US7691199B2 (en) | 2004-06-18 | 2010-04-06 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
| KR102217883B1 (en) * | 2020-09-24 | 2021-02-18 | 한화솔루션 주식회사 | Continuous ingot growing apparatus |
| KR102271710B1 (en) * | 2020-09-24 | 2021-06-30 | 한화솔루션 주식회사 | Ingot growing apparatus |
| WO2022065736A1 (en) * | 2020-09-24 | 2022-03-31 | 한화솔루션 주식회사 | Apparatus for continuously growing ingot |
| WO2022065735A1 (en) * | 2020-09-24 | 2022-03-31 | 한화솔루션 주식회사 | Premelter for preliminarily melting silicon to be supplied to main crucible and control method thereof |
-
1997
- 1997-09-22 JP JP27510697A patent/JPH1192276A/en not_active Withdrawn
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006009802A2 (en) * | 2004-06-18 | 2006-01-26 | Memc Electronic Materials, Inc. | A melter assembly and method for charging a crystal forming apparatus with molten source material |
| WO2006009802A3 (en) * | 2004-06-18 | 2006-08-24 | Memc Electronic Materials | A melter assembly and method for charging a crystal forming apparatus with molten source material |
| JP2008503427A (en) * | 2004-06-18 | 2008-02-07 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | Method of charging molten source material into crystal manufacturing apparatus and melting apparatus assembly |
| US7344594B2 (en) | 2004-06-18 | 2008-03-18 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
| US7465351B2 (en) | 2004-06-18 | 2008-12-16 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
| US7691199B2 (en) | 2004-06-18 | 2010-04-06 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
| KR102217883B1 (en) * | 2020-09-24 | 2021-02-18 | 한화솔루션 주식회사 | Continuous ingot growing apparatus |
| KR102271710B1 (en) * | 2020-09-24 | 2021-06-30 | 한화솔루션 주식회사 | Ingot growing apparatus |
| WO2022065736A1 (en) * | 2020-09-24 | 2022-03-31 | 한화솔루션 주식회사 | Apparatus for continuously growing ingot |
| WO2022065737A1 (en) * | 2020-09-24 | 2022-03-31 | 한화솔루션 주식회사 | Apparatus for continuously growing ingot |
| WO2022065735A1 (en) * | 2020-09-24 | 2022-03-31 | 한화솔루션 주식회사 | Premelter for preliminarily melting silicon to be supplied to main crucible and control method thereof |
| WO2022065741A1 (en) * | 2020-09-24 | 2022-03-31 | 한화솔루션 주식회사 | Ingot growing apparatus |
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