JPS5810979A - Solid-state image pickup device - Google Patents

Abstract

PURPOSE:To obtain a signal with high quality through the use of a circuit of low speed, by providing a plurality of signal output lines for a solid-state image pickup element, and picking up output signals at the same time and subjecting to A/D conversion, by decreasing a sampling period and a sampling time width. CONSTITUTION:When a vertical scanning circuit 24 and a horizontal scanning circuit 25 are sequentially driven with adriving pulse signals phiV and phiH, a readout signal is respectively applied to control lines V1-Vm and H1-He. Thus, an output signal of adjacent photo diodes is picked up always at output terminals 22 and 23. When this signal is processed with a sampling signal SP of the same frequency at A/D converters 31 and 32, doubled picture elements can simultaneously be processed. Thus, when the output terminal and the A/D converters are increased in number as each two or three and two or more picture elements can be picked up at the output terminals at the same time, then the amount of information to be processed with the same sampling signal can be increased to N times proportionally.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to, for example, a solid-state imaging device suitable for obtaining high-definition television broadcasting.

As is well known, television broadcasting in Japan and America is 5.6 g = 30011 horizontal pixels. Number of scanning lines: 52
Five methods have been adopted, and a similar method is also used in Europe. However, in recent years, higher quality images have been required. Therefore, another method with a larger number of scans has been proposed. For example, a method with 1125 scanning lines and 1400 horizontal pixels has been tested. There is. The disadvantage of this method is quantitatively: the signal bandwidth increases as the number of pixels and scanning lines increases to 525. In other words, when the number of scanning lines is s25, it is approximately 4 jtHz. Band is 1
In the 1125-line system, the range is 0 MHz or higher (this is a large book for designing a normal amplifier, but when dealing with a 41gm television signal by converting it into a pulse boondock,... /D * @ @ f) The design is perfect [problem] In the case of 1 normal 528 wires, the minimum number of chimpling cycles #I to turn the previsual signal into a pulse boond is 8M from Nyquist's condition C2
Hz, but if we consider this method under the same conditions, which is actually used at 13 MHz or 14 Hz, a chimp frequency of 60 MEx or 80 MHg will be required, and it will be /D
1 f converter! Therefore, the configuration shown in #IEl: is being considered.

1 is a solid-state image pickup device in which a horizontal, 1j and 2-dimensional two-dimensional matrix 4: for example, a photodiode and an MO8 field effect transistor are arranged; 12. IB are a horizontal scanning circuit and a direct scanning circuit which respectively drive the switches and take out the accumulated signals from the photodiode 4. A signal extracted from the solid-state image sensor 11 is supplied to a preamplifier 154 via a connector 14, and the output signal of this amplifier 15 is fed to a wideband delay 916.
supplied to This delay @161': is provided with a tag, and the signals with different delay amounts taken out from this tap are each supplied with a common sampling pulse signal Ip. A/D conversion @lfl, 11.19.10i :Supplied.

That is, the feature of this configuration is that signals are processed in parallel using the time difference between the delay lines 160, and the f-sampling period can be set to 1/N of the normal one, where N is the number of taps. However, the sample time width remains the same, and it also requires an expensive delay line, which poses technical difficulties.

This invention has been made based on the above-mentioned situation C, and its purpose is to provide a solid-state sensor C2 with a plurality of signal output lines, each of which has a horizontal direction 1: an output of an adjacent signal storage element. Simultaneous signal (: Spread out A/D
@Converting C: The chimpsing period and sampling time width can be reduced, and the relatively slow 1g1j
The present invention aims to provide a solid-state image sensor capable of obtaining high-density, high-quality television signals using I8. Example 6 of this invention will be described below with reference to the drawings. do.

K2E, No. 311 (:, zl is a solid-state image sensor. This solid-state image sensor 21 is a signal storage element arranged in a two-dimensional matrix in the horizontal and -vertical directions, for example, PN*
Confluence photodiode (p,, @ Dlm + '-
D In11) k Yohi M 08 Field effect transistor (T1., 'r1. @~Tmn) and field effect transistor for C two outputs (T・1@Tel~T, n
) and has %2 output terminals JJ, JJ. That is, the photodiode (D, 1. D,
, , ~Dmn) are respectively grounded, and the cathodes are connected to the door y registers (T1., 'I'tl, ~
Tmn) source (two connected. The gates of this transistor (Tll@'I'tt@-Tmn) are connected through the control 1i (Vt-Vm-"Vm)"C vertical scanning circuit 24C: 1. The drains are as above)
) sources (=respectively connected・The gates of this transistor (Te1-Te snow, ~T@n) are adjacent to each other, for example, TOI and TH@T(H and Te4~T@n)
n-1 and Ton form a pair, and the control line (Hm
-Ht to H/) to the horizontal scanning circuit 25.

Also, this transistor (Te1l * 'I'ot
A resistance of 1 g is applied to each drain y of I...Ton).
, IF are connected to a DC power source 28, and adjacent drains thereof are connected to separate output terminals 22 and 23, respectively. That is, a transistor (Tow-T
41 s s ~ Ton-t ) is connected to the output terminal 71 (:l:, Ji), and the transistor (Tom s
The drain of Tea, -Ton) is connected to the output terminal 2J (
: connected - these output electrons xx, sat 2 are respectively connected to the inputs of the preamplifiers 29.10 and 2 to these amplifiers III.

The output terminals of 10 are respectively input to the A/D converters 11 and 12 (:1-m1ll!).

In the above configuration, [I[scanning circuit 24 and horizontal scanning Kushiro IJ are sequentially driven by drive pulse signals φV, φH (=, control edges V, , V, ~Vm and) l, ,
H, -1j(: A read signal is sequentially supplied to each.

Therefore, it is clear that the output terminals xz, zsC: are always processed by the output signals of the adjacent photodiodes, and at the same time, twice as many pixels can be processed.In this way,
Output terminal and A/Dfyl! By increasing the number of pixels by two, three, etc., and extracting two or more pixels at the same time, the amount of information that can be obtained with the same sampling signal is proportional to (2). It can be seen that N〚C=.If Nm4 is assumed, it is clear that a 1125-line TV signal can be processed with the same 11MHz f-sampling signal as before, and it is possible to process not only the sampling period but also the sampling frequency. It is clear that the time will also be increased by N times. Therefore.

With such a configuration, signal processing (2 relatively slow A
It has the advantage that a /Dim device can be used, and that a conventional recording device can be used. Also,
The solid-state image sensor 21 also reads multiple pixels at the same time (=to read out,
The frequency of the horizontal readout signal of the horizontal scanning circuit 25 is 1/N, which is advantageous in terms of operation.

In the above embodiment, a PN junction photodiode was used as the signal storage element, but it is not limited to this.
Charge/'Injection DelvIce
), etc. It goes without saying that all kinds of modifications can be made without changing the gist of the present invention.

1. As detailed above, according to this FLJt, it is possible to reduce the chimpling period and sampling time width, and it is possible to obtain a high-density, high-quality television signal using a relatively low-speed circuit. It is possible to provide a porcelain imaging device that is possible.

[Brief explanation of the drawing]

Figure 1 is a configuration diagram showing an example of a conventional solid-state imaging device.
The figure is a block diagram showing one embodiment of a solid-state imaging device according to the present invention, and FIG. 3 is a block diagram specifically showing the main parts of FIG. 2. 21... Solid-state imaging device, 24.・Vertical scanning circuit, 2
5...Horizontal scanning circuit, 31.32...A/D converter, D11-Dmn-photodiode.

Claims (1)

[Claims] A solid-state imaging device (with multiple signal output lines,
A solid-state imaging device characterized by having a configuration in which two output signals of the signal storage elements adjacent to each other in the horizontal direction are simultaneously extracted from the output line (C) and converted into A/Dll'.