JPS58109271U - 半導体レ−ザ - Google Patents
半導体レ−ザInfo
- Publication number
- JPS58109271U JPS58109271U JP584182U JP584182U JPS58109271U JP S58109271 U JPS58109271 U JP S58109271U JP 584182 U JP584182 U JP 584182U JP 584182 U JP584182 U JP 584182U JP S58109271 U JPS58109271 U JP S58109271U
- Authority
- JP
- Japan
- Prior art keywords
- refractive index
- layer
- semiconductor laser
- active layer
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP584182U JPS58109271U (ja) | 1982-01-20 | 1982-01-20 | 半導体レ−ザ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP584182U JPS58109271U (ja) | 1982-01-20 | 1982-01-20 | 半導体レ−ザ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58109271U true JPS58109271U (ja) | 1983-07-25 |
| JPS6334293Y2 JPS6334293Y2 (enrdf_load_stackoverflow) | 1988-09-12 |
Family
ID=30018635
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP584182U Granted JPS58109271U (ja) | 1982-01-20 | 1982-01-20 | 半導体レ−ザ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58109271U (enrdf_load_stackoverflow) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5887370U (ja) * | 1981-12-08 | 1983-06-14 | 日本電気株式会社 | 半導体レ−ザ |
-
1982
- 1982-01-20 JP JP584182U patent/JPS58109271U/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5887370U (ja) * | 1981-12-08 | 1983-06-14 | 日本電気株式会社 | 半導体レ−ザ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6334293Y2 (enrdf_load_stackoverflow) | 1988-09-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS58109271U (ja) | 半導体レ−ザ | |
| JPS5887370U (ja) | 半導体レ−ザ | |
| JPS60146370U (ja) | 半導体レ−ザ | |
| JPS5911690A (ja) | 半導体レ−ザ装置 | |
| JPS60181063U (ja) | 半導体レ−ザ | |
| JPS60176563U (ja) | 半導体レ−ザ | |
| KR100284765B1 (ko) | 반도체 레이저 다이오드 및 그 제조 방법 | |
| JPH036877A (ja) | 半導体レーザの製造方法 | |
| JP2873303B2 (ja) | 半導体光導波路 | |
| JPS606906A (ja) | 半導体光素子 | |
| JPS60107881A (ja) | 半導体レ−ザ装置の製造方法 | |
| JPS5979812U (ja) | 薄膜光導波路の光結合構造 | |
| JPS62293686A (ja) | 半導体レ−ザ | |
| JPH03167882A (ja) | 端面放射型発光ダイオード及びその製造方法 | |
| JPH0228388A (ja) | 半導体レーザ素子 | |
| JPS60172354U (ja) | 半導体レ−ザ | |
| JPS5961086A (ja) | 半導体発光装置 | |
| JPS62296589A (ja) | 半導体レ−ザ素子 | |
| JPH02105593A (ja) | 半導体レーザ | |
| JPS5984511U (ja) | 半導体レ−ザと光フアイバの結合構造 | |
| JPS61248582A (ja) | 半導体レ−ザアレイ装置の製造方法 | |
| JPS58150856U (ja) | 半導体レ−ザ装置 | |
| JPH02191388A (ja) | 半導体レーザーの製造方法 | |
| JPS6255984A (ja) | 半導体レ−ザ素子 | |
| JPH0389426U (enrdf_load_stackoverflow) |