JPS58109268U - thyristor - Google Patents

thyristor

Info

Publication number
JPS58109268U
JPS58109268U JP18066182U JP18066182U JPS58109268U JP S58109268 U JPS58109268 U JP S58109268U JP 18066182 U JP18066182 U JP 18066182U JP 18066182 U JP18066182 U JP 18066182U JP S58109268 U JPS58109268 U JP S58109268U
Authority
JP
Japan
Prior art keywords
base region
junction
region
glass member
annular glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18066182U
Other languages
Japanese (ja)
Inventor
デビツドブレロイ・ム−ア
ジヨン・アンソニ−・オストツプ
ジヨセフ・エドガ−・ジヨンソン
Original Assignee
ウエスチングハウス　エレクトリック　コ−ポレ−ション
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ウエスチングハウス　エレクトリック　コ−ポレ−ション filed Critical ウエスチングハウス　エレクトリック　コ−ポレ−ション
Publication of JPS58109268U publication Critical patent/JPS58109268U/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図はこの考案の第１の実施例の一部断面図、第２図
はこの考案あ第２の実施例の一部断面図、第３図はこの
考案の第３の実施例の一部断面図、第４図はこの考案の
第４の実施例のｉ部断面図、第５図はこの考案の第５の
実施例の一部断面図、第６図は第１の環状ガラス予備形
成物を示す斜視図、第７図は第２の環状ガラス予備形成
物を示す斜視図、第８図はサイリスタの構成要素を保持
するために用いられるジグの断面図、及び第９図は融解
炉の時間一温度グラフである。　。 ２０．２２０．３２０：　　４２０．５２０・・・・・
・サイリスク、２２，２２２，３２２，４２２゜５２２
・・・・・・半導体材料本体、１９，２１９゜３１９．
４１９，５１９．２３，２２３，３２３゜４２３．５２
３・・・・・・主表面、２４，２２４゜３２４．４２４
，５２４・・・・・・第１エミツタ領域、２６．２２６
，３２６，４２６，５２６・・・・・・第１ベース領域
、２Ｂ、ｎ２ａ、、３２ａ、４２８゜５２８・・・・・
・第２ベース領域、３０，２３０゜３３０．４３０，５
３０・・・・・Ｊ第２エミッタ領域、２１．２２１，３
２１，４２１，５２１，２５゜２２５．３２５，４２５
，５２５．２９，２２９゜３２９．４２９．５２９・・
・・・−ＰＮ接合、２７゜２２７．３２７，４２７，５
２７・・・・・・縁部、３２゜２３２．３３２，４３２
，５３２・・・・・・カソード電極、３４，２３４，３
３４，４３４，５３４・・・・・・ゲニ゛ト電極、３６
．・・２３６，３３．６，４３６゜５３６・・・・・・
アノード電極、３５，２３５，３３５゜４３５．５３５
．３８，２３８，３３．８．　４３８゜５３８・・・・
・・縁部、４０，２４０，３４０，４４０゜５４０．４
６，２４６，３４６，４４６，５４６補正　昭５８．　
１．６ 実用新案登録請求の範囲を次のように補正する。 Ｏ実用新案登録請求の範囲Fig. 1 is a partial sectional view of the first embodiment of this invention, Fig. 2 is a partial sectional view of the second embodiment of this invention, and Fig. 3 is a partial sectional view of the second embodiment of this invention. 4 is a sectional view of part i of the fourth embodiment of this invention, FIG. 5 is a partial sectional view of the fifth embodiment of this invention, and FIG. 6 is a first annular glass preliminary. FIG. 7 is a perspective view of the second annular glass preform; FIG. 8 is a cross-sectional view of the jig used to hold the thyristor components; and FIG. 9 is a perspective view of the fused glass preform. It is a time-temperature graph of the furnace. . 20.220.320: 420.520...
・Sirisk, 22,222,322,422°522
... Semiconductor material body, 19,219°319.
419,519.23,223,323°423.52
3... Main surface, 24,224°324.424
,524...First emitter region, 26.226
, 326, 426, 526... First base region, 2B, n2a, , 32a, 428° 528...
・Second base area, 30,230°330.430,5
30...J second emitter region, 21.221,3
21,421,521,25°225.325,425
,525.29,229゜329.429.529...
...-PN junction, 27°227.327,427,5
27...Edge, 32°232.332,432
,532... cathode electrode, 34,234,3
34,434,534...Genite electrode, 36
．．・・・236,33.6,436゜536・・・・・・
Anode electrode, 35,235,335°435.535
．． 38,238,33.8. 438°538...
・・Edge, 40,240,340,440°540.4
6,246,346,446,546 correction 1982.
1.6 The scope of claims for utility model registration shall be amended as follows. O Scope of utility model registration request

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半導体材料本体、この半導体材料本体の第１エミツタ領
域と第１ベース領域との間のＰＮ接合を保護する封止体
を形成する第１の環状ガラス部材；及び、第１ベース領
域と第２ペニス領域との間のＰＮ接合及び第２ベース領
域と第２工逝ツタ領域との間のＰＮ接合を保護する封止
体を形成する第２の環状ガラス部材；４有し、前記第１
及び第２の環状ガラス部材の重量組成が５ｉｎ２３２−
４０％、８２０３１２３３％、Ｐｂ０４２−４８％、及
びＡｌｑ０３２　６％、であることを特徴としたサイリ
スク。a body of semiconductor material, a first annular glass member forming a seal protecting a PN junction between a first emitter region and a first base region of the body of semiconductor material; and a first base region and a second penis. a second annular glass member forming a sealing body for protecting a PN junction between the second base region and the second base region and a PN junction between the second base region and the second vine region;
And the weight composition of the second annular glass member is 5in232-
40%, 82031233%, Pb042-48%, and Alq032 6%.
JP18066182U 1978-09-15 1982-12-01 thyristor Pending JPS58109268U (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US94257778A 1978-09-15 1978-09-15
US942577 1978-09-15

Publications (1)

Publication Number Publication Date
JPS58109268U true JPS58109268U (en) 1983-07-25

Family

ID=25478299

Family Applications (2)

Application Number Title Priority Date Filing Date
JP11747279A Pending JPS5558571A (en) 1978-09-15 1979-09-14 Thyristor
JP18066182U Pending JPS58109268U (en) 1978-09-15 1982-12-01 thyristor

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP11747279A Pending JPS5558571A (en) 1978-09-15 1979-09-14 Thyristor

Country Status (8)

Country Link
JP (2) JPS5558571A (en)
BE (1) BE878751A (en)
BR (1) BR7905849A (en)
CA (1) CA1134057A (en)
DE (1) DE2937258A1 (en)
FR (1) FR2436499A1 (en)
GB (1) GB2031225B (en)
IN (1) IN152228B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4349584A (en) * 1981-04-28 1982-09-14 Rca Corporation Process for tapering openings in ternary glass coatings
DE102009001534B4 (en) * 2009-03-13 2012-10-04 Infineon Technologies Bipolar Gmbh & Co. Kg Photosensitive electronic component and method for producing a housing cover

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4934282A (en) * 1972-07-29 1974-03-29
JPS5069971A (en) * 1973-10-24 1975-06-11
JPS5130480A (en) * 1974-09-09 1976-03-15 New Nippon Electric Co Handotaisochi no seizohoho

Also Published As

Publication number Publication date
BR7905849A (en) 1980-05-27
GB2031225A (en) 1980-04-16
IN152228B (en) 1983-11-26
FR2436499A1 (en) 1980-04-11
JPS5558571A (en) 1980-05-01
BE878751A (en) 1980-03-12
DE2937258A1 (en) 1980-03-27
CA1134057A (en) 1982-10-19
GB2031225B (en) 1983-07-20

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