JPS58108932A - Battery backup device - Google Patents

Battery backup device

Info

Publication number
JPS58108932A
JPS58108932A JP56206162A JP20616281A JPS58108932A JP S58108932 A JPS58108932 A JP S58108932A JP 56206162 A JP56206162 A JP 56206162A JP 20616281 A JP20616281 A JP 20616281A JP S58108932 A JPS58108932 A JP S58108932A
Authority
JP
Japan
Prior art keywords
battery
input
power supply
volatile memory
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56206162A
Other languages
Japanese (ja)
Inventor
渡部 忠二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP56206162A priority Critical patent/JPS58108932A/en
Publication of JPS58108932A publication Critical patent/JPS58108932A/en
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 本発明は半導体記憶装置(揮発性メモy)のバッテリバ
ックアップK11Iする。
DETAILED DESCRIPTION OF THE INVENTION The present invention performs battery backup K11I of a semiconductor memory device (volatile memory).

半導体記憶装置においては供給電IIO異常時(一時停
電Ill記憶内容を保護することが必要である。この場
合、記憶内容を保−する方法として一般にバッテリを付
加してバックアップ機能をもたせている。第1図はその
ような装置をブロック図で示したものである6図におい
て%(1)′VicPU(電源装置を含む)であり、(
2)は半導体記憶装置(揮発性メモリ)である、(3)
#fiバッタアップ用バッテリを備えたDC電源装置、
(4) ti A C入力、(5)は直流電源電圧、(
6)はデータ信号パスである。バックアップ時間はバッ
テリの容量及び記憶装置の消費電流に依存する。バッテ
リの容量は置体、システムスペース等の制限から概して
大容量のものとする仁とが出来ず、バックアップ時間は
短かくなる欠点があった。また長期停電が生じた時電池
の残存容量がOAKなるまでバッテリの放電が続くため
バッテリの寿命が短くなる欠点があった。
In semiconductor storage devices, it is necessary to protect the stored contents in the event of an abnormality in the power supply IIO (temporary power outage).In this case, as a method of preserving the stored contents, a battery is generally added to provide a backup function. Figure 1 shows such a device in block diagram form.In Figure 6, it is %(1)'VicPU (including power supply),
2) is a semiconductor storage device (volatile memory); (3)
#DC power supply device with battery for fi-batter-up,
(4) ti A C input, (5) is the DC power supply voltage, (
6) is a data signal path. The backup time depends on the battery capacity and the current consumption of the storage device. Generally speaking, it is not possible to increase the capacity of the battery due to limitations such as installation, system space, etc., and the backup time is shortened. Furthermore, when a long-term power outage occurs, the battery continues to be discharged until its remaining capacity reaches OAK, resulting in a shortened battery life.

本発明は以上に鑑みてなされえもので、小容量のバッテ
リで半導体記憶装置の記憶内容を長時間に亘り保持でき
るバッテリバックアップ装置管提供することを目的とす
る。 ′ 以下に実施例によ)その詳細を説明する。第2図は本発
明の一実施例を示すプロッタ図である。
The present invention has been made in view of the above, and it is an object of the present invention to provide a battery backup device capable of retaining the memory contents of a semiconductor storage device for a long time with a small capacity battery. ' The details will be explained below using examples. FIG. 2 is a plotter diagram showing one embodiment of the present invention.

同図に於ては第1図と同−機能部には同一符号を付けで
ある。第2図に於ける特徴は磁気ディスクやフロッピー
ディスク等の不揮発性メモリ(7)を半導体記憶値f(
2a)GCデータ転送パスライン(8)を用いて接続し
九ことである。+9)は半導体記憶装置がその記憶デー
タをパスライン(8)を通して不揮tメモリ(7)へデ
ータ転送完了したときKそれをバッテリバックアップ付
りCg源装置(3a)に伝える信号であり電源装置(3
11)はこの信号を受けたと色その直流出力15)を遮
断する機能を備えている。
In this figure, the same reference numerals are given to the same functional parts as in FIG. 1. The feature in Fig. 2 is that non-volatile memory (7) such as a magnetic disk or floppy disk is stored as a semiconductor memory value
2a) Connect using the GC data transfer path line (8). +9) is a signal that transmits the stored data to the Cg source device (3a) with battery backup when the semiconductor storage device completes data transfer to the nonvolatile t-memory (7) through the pass line (8). (3
11) has a function of cutting off the color's DC output 15) when it receives this signal.

次に第2図の動作をそのタイミングチャートであるa!
3図を用いて説明する。AC入力(4)が供給されると
CPU内の電源が投入され、 CPUから直流電源投入
指令が出て、DC電源装置(3a)からAC−DC変換
による直流電源電圧(5)が発生する。
Next, the timing chart of the operation shown in FIG. 2 is a!
This will be explained using Figure 3. When the AC input (4) is supplied, the power inside the CPU is turned on, the CPU issues a DC power-on command, and the DC power supply voltage (5) is generated by AC-DC conversion from the DC power supply (3a).

直流電源電圧(5)の発生により半導体記憶装置(2m
)は不揮発性メモリ(7)の記憶内容をデータ転送バス
%8)を介して受取る。この転送時間は記憶容量によっ
て異なる。半導体記憶装置(2a)に不揮発性メモ13
 (’7)の内容転送が終了すると半導体記憶装置(2
3)は(JIU (1)及び他の機器(図示なし)から
の要求を信号バス(6)を介してリクエストを受付け、
半導体記憶装置(2a)からの内容を読出し又は半導体
配憶装置(2a)への書込みを実行〔実行期間:第3図
の鱒〕する。従ってCPU (1)及び他の機器(図示
なし)からの要求に対してのアクセススピードは磁気デ
ィスク、フロッピーディスク等の不揮発性メモリ(1)
への直接アクセスよ)41向上する。
Due to the generation of DC power supply voltage (5), the semiconductor memory device (2 m
) receives the stored contents of the non-volatile memory (7) via the data transfer bus (%8). This transfer time varies depending on storage capacity. Non-volatile memory 13 in semiconductor storage device (2a)
('7) is completed, the semiconductor storage device ('7) is transferred.
3) accepts requests from the JIU (1) and other devices (not shown) via the signal bus (6);
The contents are read from the semiconductor storage device (2a) or written to the semiconductor storage device (2a) [execution period: trout in FIG. 3]. Therefore, the access speed for requests from the CPU (1) and other devices (not shown) is faster than non-volatile memory (1) such as magnetic disks and floppy disks.
Direct access to ) 41 improvements.

AC入力が遮断した場合は、 CPU(1)又は電源装
置(3a)にてその状態を検知し、バッテリによるバッ
クアップにより直流電源電圧(5)を出力し半導体記憶
装置(2a)の記憶内容をデータ転送バス(8)を介し
て不揮発性メそす(7)へ転送を開始する。転送を完了
すると、半導体配憶装置t(21)から電源装[(3a
)5電源遮断信号(9)を送って電源装置(3a)の直
流電源電圧出力(5)を遮断する。
When the AC input is cut off, the CPU (1) or power supply (3a) detects the condition and outputs the DC power supply voltage (5) with battery backup to data the memory contents of the semiconductor storage device (2a). Transfer to the non-volatile memory (7) is started via the transfer bus (8). When the transfer is completed, the semiconductor storage device t(21) is transferred from the power supply device [(3a
)5 A power cutoff signal (9) is sent to cut off the DC power supply voltage output (5) of the power supply device (3a).

以上で判るよう忙電源装置(3m)内のバッテリの放電
電流tiAc入男遮断にはじまり半導体記憶装置(2a
)内の記憶内容を不揮発性メモリ(7)への転送完了に
よって終了する。従ってバッテリの容量は半導体記憶装
置(21)と不揮発性メモリ())の消費電流及び転送
時間によって決まる。ムC入力が復帰した場合は直流電
源投入指令が出た動作と同じ動作が行われる。
As can be seen from the above, the discharge current of the battery in the busy power supply device (3m) starts with cutting off the tiAc input, and the semiconductor storage device (2a)
) is completed upon completion of transferring the stored contents to the nonvolatile memory (7). Therefore, the capacity of the battery is determined by the current consumption and transfer time of the semiconductor storage device (21) and the nonvolatile memory (). When the system C input is restored, the same operation as when the DC power-on command was issued is performed.

本発明は以上のようKlkbものであって、バックアッ
プバッテリの容量社ムC入力の遮断から上記データ転送
完了まで動作するに足)るものであればよいから比較的
小形のものでよい、しかも長時間に亘るムC入力纏断に
も記憶内容が保持される。まえ、不揮発性メモリはAC
入力の投入1a断時にのみ半導体記憶装置との転送を実
施するものである為、そのスピードは高く要求されない
As described above, the present invention is a Klkb device, and since the capacity of the backup battery is sufficient to operate from the cutoff of the C input to the completion of the data transfer, it is sufficient that the present invention is relatively small and has a long life. The memory contents are retained even if the input of the memory is interrupted over time. First, non-volatile memory is AC
Since the transfer with the semiconductor memory device is performed only when the input 1a is turned off, a high speed is not required.

又、同容量のバッテリに於て社長時間の停電に対しても
電池の残存容量が大きい(70〜80−位壕でKikる
)ため電池の寿命を長くできる0等の効果を奏すること
ができる。
In addition, even with a battery of the same capacity, the remaining capacity of the battery is large even in the event of a power outage during president's time (it reaches 70 to 80 degrees), so it can have the effect of extending the life of the battery. .

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来のバッテリバックアップ装置を示すブロッ
ク図、第2図は本発明の一実施例を示す、ブロック図、
第3図は第2図の動作タイミング雷821・・・揮発性
メモリ(半導体記憶装置)3Jl・・・DC電源装置 
4・・・・Ac入カフ・・・・ 不揮発性メモリ 代理人 弁理士 井 上−男
FIG. 1 is a block diagram showing a conventional battery backup device, and FIG. 2 is a block diagram showing an embodiment of the present invention.
Figure 3 shows the operation timing of Figure 2. Lightning 821...Volatile memory (semiconductor storage device) 3Jl...DC power supply device
4...Ac cuff...Non-volatile memory agent Patent attorney Inoue-Male

Claims (1)

【特許請求の範囲】[Claims] AC入力ON時に不揮発性メモリから揮発性メモリへ、
AC入力0FFliK揮発性メモリから不揮発性メモリ
へそれぞれ互にデータ転送を行う2つのメモリと、AC
入力OFF時KDC電源をバックアップするバッテリを
備えたDC電源装置とを具備し、AC入力0FFKよ)
ONシたバッテリからのDCiIIEIII供給を、前
記AC入力の0FPKよシ開始した揮発性メモリから不
揮発性メモリへのデータ転送の完了をもってOFFする
ことを特徴とするバッテリバックアップ装置。
From non-volatile memory to volatile memory when AC input is ON,
AC input 0FFliK Two memories that mutually transfer data from volatile memory to nonvolatile memory, and AC
It is equipped with a DC power supply device equipped with a battery to back up the KDC power supply when the input is OFF, and the AC input is OFF (
A battery backup device characterized in that the supply of DCiIIIEIII from a battery that has been turned on is turned off upon completion of data transfer from a volatile memory to a nonvolatile memory that started at 0FPK of the AC input.
JP56206162A 1981-12-22 1981-12-22 Battery backup device Pending JPS58108932A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56206162A JPS58108932A (en) 1981-12-22 1981-12-22 Battery backup device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56206162A JPS58108932A (en) 1981-12-22 1981-12-22 Battery backup device

Publications (1)

Publication Number Publication Date
JPS58108932A true JPS58108932A (en) 1983-06-29

Family

ID=16518823

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56206162A Pending JPS58108932A (en) 1981-12-22 1981-12-22 Battery backup device

Country Status (1)

Country Link
JP (1) JPS58108932A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01131247U (en) * 1988-02-27 1989-09-06
JPH01131246U (en) * 1988-02-27 1989-09-06
EP2034745A1 (en) 2007-09-07 2009-03-11 Canon Kabushiki Kaisha Projection display apparatus

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01131247U (en) * 1988-02-27 1989-09-06
JPH01131246U (en) * 1988-02-27 1989-09-06
EP2034745A1 (en) 2007-09-07 2009-03-11 Canon Kabushiki Kaisha Projection display apparatus
JP2009064285A (en) * 2007-09-07 2009-03-26 Canon Inc Projection display device
US8021003B2 (en) 2007-09-07 2011-09-20 Canon Kabushiki Kaisha Projection display apparatus having nonvolatile memory

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