JPS5810884A - 埋め込みヘテロ構造半導体レ−ザの製造方法 - Google Patents
埋め込みヘテロ構造半導体レ−ザの製造方法Info
- Publication number
- JPS5810884A JPS5810884A JP10968881A JP10968881A JPS5810884A JP S5810884 A JPS5810884 A JP S5810884A JP 10968881 A JP10968881 A JP 10968881A JP 10968881 A JP10968881 A JP 10968881A JP S5810884 A JPS5810884 A JP S5810884A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- active layer
- inp
- laminated
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000004065 semiconductor Substances 0.000 title claims abstract description 10
- 239000012535 impurity Substances 0.000 claims abstract description 16
- 238000009792 diffusion process Methods 0.000 claims description 20
- 230000000903 blocking effect Effects 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- 238000002844 melting Methods 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 5
- 238000010030 laminating Methods 0.000 claims description 2
- 210000003127 knee Anatomy 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 9
- 230000010355 oscillation Effects 0.000 description 8
- 238000005253 cladding Methods 0.000 description 4
- 230000003685 thermal hair damage Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2081—Methods of obtaining the confinement using special etching techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Semiconductor Lasers (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10968881A JPS5810884A (ja) | 1981-07-14 | 1981-07-14 | 埋め込みヘテロ構造半導体レ−ザの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10968881A JPS5810884A (ja) | 1981-07-14 | 1981-07-14 | 埋め込みヘテロ構造半導体レ−ザの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5810884A true JPS5810884A (ja) | 1983-01-21 |
| JPS6248919B2 JPS6248919B2 (enrdf_load_stackoverflow) | 1987-10-16 |
Family
ID=14516664
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10968881A Granted JPS5810884A (ja) | 1981-07-14 | 1981-07-14 | 埋め込みヘテロ構造半導体レ−ザの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5810884A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4948753A (en) * | 1984-03-27 | 1990-08-14 | Matsushita Electric Industrial Co., Ltd. | Method of producing stripe-structure semiconductor laser |
| US5028563A (en) * | 1989-02-24 | 1991-07-02 | Laser Photonics, Inc. | Method for making low tuning rate single mode PbTe/PbEuSeTe buried heterostructure tunable diode lasers and arrays |
| US5119388A (en) * | 1989-02-24 | 1992-06-02 | Laser Photonics, Inc. | Low tuning rate PbTe/PbEuSeTe buried quantum well tunable diode lasers and arrays |
| JPH0557922U (ja) * | 1991-12-26 | 1993-07-30 | 日本ビクター株式会社 | 電力増幅器の駆動回路 |
| EP0610777A1 (en) * | 1993-02-12 | 1994-08-17 | ALCATEL ITALIA S.p.A. | Semiconductor laser with low threshold current and related manufacturing process |
-
1981
- 1981-07-14 JP JP10968881A patent/JPS5810884A/ja active Granted
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4948753A (en) * | 1984-03-27 | 1990-08-14 | Matsushita Electric Industrial Co., Ltd. | Method of producing stripe-structure semiconductor laser |
| US5028563A (en) * | 1989-02-24 | 1991-07-02 | Laser Photonics, Inc. | Method for making low tuning rate single mode PbTe/PbEuSeTe buried heterostructure tunable diode lasers and arrays |
| US5119388A (en) * | 1989-02-24 | 1992-06-02 | Laser Photonics, Inc. | Low tuning rate PbTe/PbEuSeTe buried quantum well tunable diode lasers and arrays |
| JPH0557922U (ja) * | 1991-12-26 | 1993-07-30 | 日本ビクター株式会社 | 電力増幅器の駆動回路 |
| EP0610777A1 (en) * | 1993-02-12 | 1994-08-17 | ALCATEL ITALIA S.p.A. | Semiconductor laser with low threshold current and related manufacturing process |
| US5504769A (en) * | 1993-02-12 | 1996-04-02 | Alcatel Italia S.P.A. | Semiconductor laser having low current threshold |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6248919B2 (enrdf_load_stackoverflow) | 1987-10-16 |
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