JPS5810863A - 光子的固体検出器及び、これを用いてなる画像形成タ−ゲツト - Google Patents

光子的固体検出器及び、これを用いてなる画像形成タ−ゲツト

Info

Publication number
JPS5810863A
JPS5810863A JP57112430A JP11243082A JPS5810863A JP S5810863 A JPS5810863 A JP S5810863A JP 57112430 A JP57112430 A JP 57112430A JP 11243082 A JP11243082 A JP 11243082A JP S5810863 A JPS5810863 A JP S5810863A
Authority
JP
Japan
Prior art keywords
transistor
current
gate electrode
substrate
transition section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57112430A
Other languages
English (en)
Japanese (ja)
Inventor
マルク・アルク
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of JPS5810863A publication Critical patent/JPS5810863A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/15Charge-coupled device [CCD] image sensors
    • H10F39/157CCD or CID infrared image sensors
    • H10F39/1575CCD or CID infrared image sensors of the hybrid type

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP57112430A 1981-06-30 1982-06-29 光子的固体検出器及び、これを用いてなる画像形成タ−ゲツト Pending JPS5810863A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8112841A FR2508709A1 (fr) 1981-06-30 1981-06-30 Detecteur photonique a lecture a transfert de charges a l'etat solide, et cible de prise de vues utilisant un tel detecteur
FR8112841 1981-06-30

Publications (1)

Publication Number Publication Date
JPS5810863A true JPS5810863A (ja) 1983-01-21

Family

ID=9260026

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57112430A Pending JPS5810863A (ja) 1981-06-30 1982-06-29 光子的固体検出器及び、これを用いてなる画像形成タ−ゲツト

Country Status (5)

Country Link
US (1) US4590390A (enExample)
EP (1) EP0068975B1 (enExample)
JP (1) JPS5810863A (enExample)
DE (1) DE3263247D1 (enExample)
FR (1) FR2508709A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5894317A (en) * 1990-02-23 1999-04-13 Seiko Epson Corporation Drop-on-demand ink-jet printing head
US6186619B1 (en) 1990-02-23 2001-02-13 Seiko Epson Corporation Drop-on-demand ink-jet printing head

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4896340A (en) * 1985-11-01 1990-01-23 Hughes Aircraft Company Partial direct injection for signal processing system
FR2634900B1 (fr) * 1988-08-01 1991-02-15 Commissariat Energie Atomique Systeme de detection d'informations sous forme de rayonnement electromagnetique et de lecture des informations detectees
JP2891550B2 (ja) * 1991-01-11 1999-05-17 三菱電機株式会社 イメージセンサ
FR2731569B1 (fr) * 1995-03-07 1997-04-25 Thomson Tubes Electroniques Dispositif de recopie de tension a grande linearite
US9029770B2 (en) * 2009-01-16 2015-05-12 Raytheon Company Enhanced direct injection circuit

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4087833A (en) * 1977-01-03 1978-05-02 Reticon Corporation Interlaced photodiode array employing analog shift registers
US4112316A (en) * 1977-04-28 1978-09-05 Westinghouse Electric Corp. Charge coupled device circuit with increased signal bandwidth
US4150304A (en) * 1978-03-14 1979-04-17 Hughes Aircraft Company CCD Comparator
NL7902968A (nl) * 1979-04-17 1980-10-21 Philips Nv Werkwijze voor het transporteren van lading en inrich- ting voor het uitvoeren van de werkwijze.
US4316103A (en) * 1979-05-15 1982-02-16 Westinghouse Electric Corp. Circuit for coupling signals from a sensor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5894317A (en) * 1990-02-23 1999-04-13 Seiko Epson Corporation Drop-on-demand ink-jet printing head
US6186619B1 (en) 1990-02-23 2001-02-13 Seiko Epson Corporation Drop-on-demand ink-jet printing head
US6742875B2 (en) 1990-02-23 2004-06-01 Seiko Epson Corp Drop-on-demand ink-jet printing head
US6942322B2 (en) 1990-02-23 2005-09-13 Seiko Epson Corporation Drop-on-demand ink-jet printing head

Also Published As

Publication number Publication date
DE3263247D1 (en) 1985-05-30
FR2508709B1 (enExample) 1985-02-08
EP0068975B1 (fr) 1985-04-24
EP0068975A1 (fr) 1983-01-05
US4590390A (en) 1986-05-20
FR2508709A1 (fr) 1982-12-31

Similar Documents

Publication Publication Date Title
US4827145A (en) Solid state light-sensitive device and method for reading such a device
US6636261B1 (en) Driven capacitor storage pixel sensor and array
US3715485A (en) Radiation sensing and signal transfer circuits
US4169273A (en) Photodetector signal processing
US4980546A (en) Photosensitive device of the type with amplification of the signal at the photosensitive dots
US4197469A (en) Capacitively coupled array of photodetectors
EP0365000A1 (en) CCD image sensor with vertical overflow drain
EP0022323B1 (en) Solid-state imaging device
US4598320A (en) Solid state photosensitive device
JPS5810863A (ja) 光子的固体検出器及び、これを用いてなる画像形成タ−ゲツト
US4500924A (en) Solid state imaging apparatus
JPH0453149B2 (enExample)
US4554571A (en) Matched photonic detector-charge transfer reader assembly and image forming target using such an assembly
EP0280097B1 (en) Charge transfer device with booster circuit
JPS6155784B2 (enExample)
JPS58175A (ja) 半導体装置
JPS60158775A (ja) 固体感光性デバイスのためのベースクリツピング方法
US6265737B1 (en) Circuit for integrating light-induced charges with improved linearity
JPS61228667A (ja) 固体撮像装置
US20030080358A1 (en) Method of charging the photodiode element in active pixel arrays
JPH02208974A (ja) 固体撮像装置
JPS6042666B2 (ja) 固体撮像装置
JP2556885B2 (ja) 半導体装置
WO1983002868A1 (fr) Dispositif de prise d'images a semiconducteurs
US6677997B1 (en) Amplifying solid-state imaging device, and method for driving the same