FR2508709A1 - Detecteur photonique a lecture a transfert de charges a l'etat solide, et cible de prise de vues utilisant un tel detecteur - Google Patents
Detecteur photonique a lecture a transfert de charges a l'etat solide, et cible de prise de vues utilisant un tel detecteur Download PDFInfo
- Publication number
- FR2508709A1 FR2508709A1 FR8112841A FR8112841A FR2508709A1 FR 2508709 A1 FR2508709 A1 FR 2508709A1 FR 8112841 A FR8112841 A FR 8112841A FR 8112841 A FR8112841 A FR 8112841A FR 2508709 A1 FR2508709 A1 FR 2508709A1
- Authority
- FR
- France
- Prior art keywords
- substrate
- current
- reader
- gate electrode
- detector according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007787 solid Substances 0.000 title claims description 3
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 230000007704 transition Effects 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- 238000001514 detection method Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 9
- 108091006146 Channels Proteins 0.000 description 5
- 230000010354 integration Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 2
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 150000004772 tellurides Chemical class 0.000 description 2
- TVEXGJYMHHTVKP-UHFFFAOYSA-N 6-oxabicyclo[3.2.1]oct-3-en-7-one Chemical compound C1C2C(=O)OC1C=CC2 TVEXGJYMHHTVKP-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 101100112682 Danio rerio ccne1 gene Proteins 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- -1 already named Chemical compound 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- DGJPPCSCQOIWCP-UHFFFAOYSA-N cadmium mercury Chemical compound [Cd].[Hg] DGJPPCSCQOIWCP-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000004313 glare Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/157—CCD or CID infrared image sensors
- H10F39/1575—CCD or CID infrared image sensors of the hybrid type
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8112841A FR2508709A1 (fr) | 1981-06-30 | 1981-06-30 | Detecteur photonique a lecture a transfert de charges a l'etat solide, et cible de prise de vues utilisant un tel detecteur |
| DE8282401092T DE3263247D1 (en) | 1981-06-30 | 1982-06-15 | Solid-state photo detector with charge transfer reading, and image sensor using such a detector |
| EP82401092A EP0068975B1 (fr) | 1981-06-30 | 1982-06-15 | Détecteur photonique à lecture à transfert de charges à l'état solide, et cible de prise de vues utilisant un tel détecteur |
| US06/391,485 US4590390A (en) | 1981-06-30 | 1982-06-24 | Solid state photonic detector with charge transfer reader and image-forming target using such a detector |
| JP57112430A JPS5810863A (ja) | 1981-06-30 | 1982-06-29 | 光子的固体検出器及び、これを用いてなる画像形成タ−ゲツト |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8112841A FR2508709A1 (fr) | 1981-06-30 | 1981-06-30 | Detecteur photonique a lecture a transfert de charges a l'etat solide, et cible de prise de vues utilisant un tel detecteur |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2508709A1 true FR2508709A1 (fr) | 1982-12-31 |
| FR2508709B1 FR2508709B1 (enExample) | 1985-02-08 |
Family
ID=9260026
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8112841A Granted FR2508709A1 (fr) | 1981-06-30 | 1981-06-30 | Detecteur photonique a lecture a transfert de charges a l'etat solide, et cible de prise de vues utilisant un tel detecteur |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4590390A (enExample) |
| EP (1) | EP0068975B1 (enExample) |
| JP (1) | JPS5810863A (enExample) |
| DE (1) | DE3263247D1 (enExample) |
| FR (1) | FR2508709A1 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4896340A (en) * | 1985-11-01 | 1990-01-23 | Hughes Aircraft Company | Partial direct injection for signal processing system |
| FR2634900B1 (fr) * | 1988-08-01 | 1991-02-15 | Commissariat Energie Atomique | Systeme de detection d'informations sous forme de rayonnement electromagnetique et de lecture des informations detectees |
| JP3041952B2 (ja) * | 1990-02-23 | 2000-05-15 | セイコーエプソン株式会社 | インクジェット式記録ヘッド、圧電振動体、及びこれらの製造方法 |
| US6186619B1 (en) | 1990-02-23 | 2001-02-13 | Seiko Epson Corporation | Drop-on-demand ink-jet printing head |
| JP2891550B2 (ja) * | 1991-01-11 | 1999-05-17 | 三菱電機株式会社 | イメージセンサ |
| FR2731569B1 (fr) * | 1995-03-07 | 1997-04-25 | Thomson Tubes Electroniques | Dispositif de recopie de tension a grande linearite |
| US9029770B2 (en) * | 2009-01-16 | 2015-05-12 | Raytheon Company | Enhanced direct injection circuit |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4087833A (en) * | 1977-01-03 | 1978-05-02 | Reticon Corporation | Interlaced photodiode array employing analog shift registers |
| US4112316A (en) * | 1977-04-28 | 1978-09-05 | Westinghouse Electric Corp. | Charge coupled device circuit with increased signal bandwidth |
| US4150304A (en) * | 1978-03-14 | 1979-04-17 | Hughes Aircraft Company | CCD Comparator |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7902968A (nl) * | 1979-04-17 | 1980-10-21 | Philips Nv | Werkwijze voor het transporteren van lading en inrich- ting voor het uitvoeren van de werkwijze. |
| US4316103A (en) * | 1979-05-15 | 1982-02-16 | Westinghouse Electric Corp. | Circuit for coupling signals from a sensor |
-
1981
- 1981-06-30 FR FR8112841A patent/FR2508709A1/fr active Granted
-
1982
- 1982-06-15 EP EP82401092A patent/EP0068975B1/fr not_active Expired
- 1982-06-15 DE DE8282401092T patent/DE3263247D1/de not_active Expired
- 1982-06-24 US US06/391,485 patent/US4590390A/en not_active Expired - Lifetime
- 1982-06-29 JP JP57112430A patent/JPS5810863A/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4087833A (en) * | 1977-01-03 | 1978-05-02 | Reticon Corporation | Interlaced photodiode array employing analog shift registers |
| US4112316A (en) * | 1977-04-28 | 1978-09-05 | Westinghouse Electric Corp. | Charge coupled device circuit with increased signal bandwidth |
| US4150304A (en) * | 1978-03-14 | 1979-04-17 | Hughes Aircraft Company | CCD Comparator |
Non-Patent Citations (2)
| Title |
|---|
| EXBK/78 * |
| EXBK/80 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5810863A (ja) | 1983-01-21 |
| DE3263247D1 (en) | 1985-05-30 |
| FR2508709B1 (enExample) | 1985-02-08 |
| EP0068975B1 (fr) | 1985-04-24 |
| EP0068975A1 (fr) | 1983-01-05 |
| US4590390A (en) | 1986-05-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP3188238B1 (fr) | Pixel de détection de temps de vol | |
| FR3065320A1 (fr) | Pixel de detection de temps de vol | |
| EP3155661B1 (fr) | Procédé d'acquisition d'images au moyen d'un capteur d'images cmos | |
| EP0128828B1 (fr) | Dispositif photosensible à l'état solide | |
| EP0068975B1 (fr) | Détecteur photonique à lecture à transfert de charges à l'état solide, et cible de prise de vues utilisant un tel détecteur | |
| FR2627922A1 (fr) | Matrice photosensible a deux diodes par point, sans conducteur specifique de remise a niveau | |
| EP1627432B1 (fr) | Capteur d image matriciel en technologie cmos | |
| EP0098191B1 (fr) | Dispositif photosensible assurant un effet anti-éblouissement | |
| EP2430659A1 (fr) | Capteur d'image integre a tres grande sensibilite | |
| EP0958545B1 (fr) | Circuit integrateur de charges photogenerees a linearite amelioree | |
| EP0148086B1 (fr) | Procédé de suppression de charge de fond d'un dispositif photosensible à l'état solide | |
| FR2513015A1 (fr) | Dispositif de detection d'image en couleurs du type transfert de charge | |
| EP2178288B1 (fr) | Dispositif et procédé pour réaliser la lecture de courants électriques résultant d'un détecteur de signaux électromagnétiques | |
| FR2857158A1 (fr) | Procede de commande d'un photocopieur de type mos | |
| FR3011980A1 (fr) | Capteur d'image a multiplication d'electrons et a lecture regroupee de pixels | |
| EP3050107B1 (fr) | Pixel d'un imageur cmos de détecteur optique | |
| EP0129470A1 (fr) | Dispositif photosensible à l'état solide | |
| FR3106238A1 (fr) | Détecteur d’image à collection électronique latérale | |
| EP4325573B1 (fr) | Double ctia pour photodiode non clampée | |
| WO2014060479A1 (fr) | Capteur d'image a efficacite quantique amelioree dans les grandes longueurs d'onde | |
| WO2010130951A1 (fr) | Capteur d'image pour imagerie a tres bas niveau de lumiere | |
| WO2016110466A1 (fr) | Capteur matriciel a reponse logarithmique et plage de fonctionnement etendue en temperature | |
| FR2627314A1 (fr) | Dispositif de lecture de charges pour photosenseur lineaire, avec dispositif d'antieblouissement a structure en ligne |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| CL | Concession to grant licences |