JPS58102942A - Heat developing method of resist - Google Patents

Abstract

PURPOSE:To shorten the developing time and to improve the reproducibility of development, by providing a heater to a turntable of a device which put a wafer on the turntable and spraying a developer to the water to develop a resist and preheating the resist or heating the developer. CONSTITUTION:A wafer 5 is put on a turntable 4 and turned, and a developer is supplied 2 to the wafer to develop a resist. A heater 8 is provided to the turntable 4 to preheat the wafer 5 from the lower side. Otherwise a tank of the developer is heated to give a proper temperature to the developer for spray, or a microwave generator (not shown in the figure) is set at the top of a developing device 1 to preheat the wafer 5 by the high frequency heating. As a result, the developing time is shortened and the reproducibility of development is improved.

Description

DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to a method for developing a resist on a wafer, and more particularly to a spray developing method.

(No Background of the Technology) In the manufacture of semiconductor devices, a resist formed on a wafer is patterned. At this time, the resist is exposed to light and then developed completely by spraying. At this time, the resist is developed at a predetermined temperature and time. There is a need to.

(3) Conventional technology and problems In the resist spray development method, the wafer is mounted on a wafer chuck, that is, a rotary table.

While rotating the wafer, a developer is sprayed onto the resist on the wafer, and the developer in the form of a gas or minute droplets is evacuated under a weak vacuum for processing. The disadvantage of this method is that the temperature of the resist changes due to the heat of vaporization during vaporization.
The temperature drops below the specified temperature.

The required development time becomes long, and it is difficult to always obtain adequate development. For example, when methyl ethyl ketone was sprayed as a developer at a flow rate of 100 cc/ml, the temperature inside the developer decreased from 25°C to 12°C in 30 seconds.

(4) Purpose of the Invention The purpose of the present invention is to
and jin, which controls m.

(3) Structure of the Invention The above-mentioned object of the present invention is to spray a developer onto the resist on the wafer while the wafer is mounted and rotated on a rotary table provided in a developing device that communicates with a developer supply device and an exhaust device. This can be achieved by a developing method characterized by developing while heating the resist or developer.

It is preferable to heat the resist from the bottom surface by applying microwaves to the wafer and a rotary table, which is a wafer chuck made of a microwave-absorbing material.

For heating the resist, it is convenient to provide a heater on a rotating table that is a wafer chuck and heat the resist from the bottom surface.

It is advantageous to spray y7A(1111) preheated.

(6) Embodiment of the Invention FIG. 1 is a schematic diagram illustrating the operation of spray development. The developer is equipped with an IFi developer spray pipe 2 and an exhaust pipe 3,
There is a turntable 4 in the chamber, on which a wafer 5 with exposed resist is mounted. For microwave heating F1. As shown in FIG. 1, a VC-f microwave generator 6 is provided above the IH, and is communicated with the inside of the developer l through a waveguide 7. Since silicon wafers absorb microwaves, the resist on the wafer can be heated from the bottom and the temperature of the resist can be precisely controlled. If there is a metal such as aluminum or gold on the wafer, the -w wave will be reflected, but the rotating table should be made of a microwave-absorbing material and covered with Teflon, etc., which will not be corroded by the developer. In this case, the wafer can be heated indirectly.Heating using microwaves has a quick response, so the reproducibility of development is good.

FIG. 2 shows a developing device 1 with a heater 8 built into a rotary table 4, which is a wafer chuck. The resist is heated from the bottom surface through the wafer 6 from the rotary table 4, which is a wafer chuck, and the temperature of the resist is easily adjusted to the desired value. can be retained.

In Figure 3, the developer sprayed onto the resist on the wafer 6 in the development III was heated in the storage tank 9 and the supply pipe 2, and the developer was maintained at 50°C. The temperature inside the wound vessel reached 30°C after 30 seconds of continuous spraying, and this temperature was maintained.

(7) Effects of the invention In either embodiment, the temperature inside the developing device is reduced to 30'.
If the temperature is maintained at C, a development time of 15 to 20 seconds is sufficient, which is shorter than the 60 to 100 seconds when no heating is performed. Since the developing temperature and time can be kept constant, the reproducibility of development can be improved.

FIG.

DESCRIPTION OF SYMBOLS 1... Developing device, 2... Developer supply pipe, 3... Exhaust pipe, 4... Rotating table, 5... Wafer, 6... Microwave generator, 7... Waveguide, 8... Heater, 9.
...Developer storage tank.

10...Microphone ■Wave transparent material.

patent applicant Fujitsu Limited patent originating agent Patent attorney Akira Aomizu Patent attorney Kazuyuki Nishidate Patent attorney 1) Yukio Patent attorney Akira Yamaguchi

Claims (1)

[Claims] L Current gII communicating with current liquid supply device and exhaust device
A developing method in which a developing solution is sprayed onto a resist on a wafer while the wafer is viewed and rotated on a rotary table provided in a rotating stage II, and the developing method is characterized in that the resist or developing solution is sprayed while being heated. 2. The developing method according to claim 1, wherein the heating is performed by applying microwaves to the wafer and/or a rotary table, which is a wafer chuck made of a microphone wave absorbing material, to characterize the resist from the bottom surface. λ The developing method according to claim 1, wherein the heating is performed by installing a heater on a rotary table that is a wafer chuck, and applying the resist from the bottom surface. 4. Heat Heating The developing solution to be supplied is heated in advance and sprayed. A developing method according to claim 1.