JPS58102445A - Voltage dividing resistor in electron gun structure - Google Patents

Abstract

PURPOSE:To obtain a thick film resistor, which has a high resistance accuracy and is more stable to high temperature and high pressure which are caused by knocking or the like, by forming the second resistor, one end of which is earthed, on the surface of a glass layer, along the longitudinal direction of the glass layer, and connecting one end of the second resistor to the end of the first resistor which is on the low-voltage side. CONSTITUTION:An RuO2-glass system paste containing RuO2 and glass in a ratio of over around 35 to 65, is applied to an alumina base plate 15 or the like by screen printing or something similar so as to make electrodes 30a-30d with given shapes. Next, an RuO2-glass system paste with a high area resistance is applied in liquid form between the electrodes 30a-30d so as to make a resistor 17. Here, guard electrodes 31a-31f are provided so that peripheral parts of each of the electrodes 30a-30d facing to one another are slightly covered. As a result, since the peripheral parts of the electrodes 30a-30d having low resistance are covered with the guard patterns 31a-31f having high resistance in such a manner as above, arcs developed by electric discharge during knockig hardly come to concentrate on the electrodes 30a-30d, and the sputtering can be suppressed.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a resistor that is incorporated together with an electron gun assembly inside a cathode ray tube and is used to divide and supply a predetermined voltage to a predetermined electrical number that powers the electron gun assembly. It is something.

The present applicant previously applied for "% Application No. 53-86507".
We proposed a voltage dividing resistor used in the electron gun assembly for color cathode ray tubes. In the invention according to the above application, a KJII film resistor is arranged near the electron gun assembly, and an anode voltage is applied from the outside to one end of the thick film resistor, and a voltage divided at a predetermined position is applied to a predetermined electrode of the electron gun. We are trying to supply it. The present invention relates to the above-mentioned thick film resistor. Prior to the details of the present invention, the outline of the embodiment of the above-mentioned application will be explained with reference to FIGS. An example in which a cathode ray tube according to the trademark) method is applied is shown below.

In Figure 1 and Figure 1142, (1) is an electron gun, (2)
is a glass stem, (3) is an exhaust pipe integrated with stem (2), (4) is a spiral bottle provided on stem (2),
GzxGs each have a cylindrical shape, and the first to fifth grids s are arranged coaxially with each other. Body, +81 (91 is the flange Q of the grid Gs (inner cylinder convergence electrode with Ik right attached,
aU21 is an outer convergence electrode supported by the support member (51 (61) via support piece a3, I is a contact piece integrally provided with the 7 langes (IQ), and as described later, this electron gun (11 051 is a metal support piece and a lead 1ilI ( It is a ceramic insulating substrate supported at both ends by C), and a resistor (17) is printed on its surface and further coated with glass.One end of the resistor αη has an electric current of 1k (3
0a) is formed, and this electrode (30m) and grid G,
and are connected by the support piece (16+), and this grid G11i
and Grid G.

The points are connected by a single point. Violet resistance body (17
An electrode (30b) is formed on the wrinkle at a predetermined position of ), and this electrode (50b) and the grid G4 are connected by a lead &m. Furthermore, an electrode (30c) is formed at a position separated by a predetermined length from the electrode (30m), and this electrode 1j (30c
) and con i (-jiensumi polar ana3 lead Scl
connected by υ. Furthermore, an electrode (30d) is formed at the other end of the resistor r1n, and this electrode (3[1d
) and the terminal pin (41) are connected by leads lII■. In addition, the convergence voltage 41 (Ill (121)
are electrically connected to each other.

The electron gun (11) having the above structure is enclosed in the neck part (c) of the cathode ray tube as shown in FIG.
A carbon film (C) with which the contact piece I comes into contact is formed on the inner circumferential surface iζ of the A high voltage of approximately 30 KV, for example, is applied via the button.

According to the above configuration, the high voltage applied to the carbon film Q41ζ is applied to the convergence electrode (8) via the contact piece (14+).
)(9) and added to grid Gs. The voltage of the resistive grid G5 is applied to the grid G through the lead *Q9, and is also applied to the resistor (1'/I) through the support piece abl.
is applied to one end of the convergence electrode 181 (91 and the grids G, , G, are kept at the same potential).
Lead by dividing the pressure at a point! It is applied to the convergence electrode antia via IIQII, and further divided at point b and applied to grid G4 via lead S■. By this t-++ζ, the convergence electrode 011 (121
By setting the potential of the convergence electrode 181 (91) slightly lower (e.g. 29 KV) and further lowering the potential of the grid G4 (e.g. 12 KV), the other end of the resistor (17+) is connected to the lead wire. via the bin (4
m), this pin (4a) is grounded via an orf resistor (c). This disposable resistor (c) is connected to the grid 04'Ik convergence 11 pole (Ill
(121). Note that a predetermined voltage is applied to each of the grids G, , G from the outside via a predetermined bin (4;).

As described above, each W+ pole can be held at a predetermined potential by dividing this voltage by the resistor 07 and applying it to each electrode based on the voltage obtained from tlFi and contact I.

In this embodiment, the convergence voltage and focus voltage are extracted from the resistor (171) by resistance division, but it is also possible to extract only the convergence voltage or only the focus voltage.As an example of a case where only the convergence voltage is extracted In some cases, power is supplied to the grid G4 by supplying a voltage of 0 to 5 KV not from the resistor (171) but from the terminal pin (4) as in the conventional case.

Further, when only the focus voltage is increased, this is the case without a convergence electrode, and is also applicable to cathode ray tubes other than the trinitron type.

In this case, the connection in Figure 1 - Diensumi pole 1
Just think of something without 8+ +910υaz.

According to the above, carbon film c! 4) In order to supply a high voltage of 1, it is sufficient to provide only one anode button of a simple structure in the funnel portion of the cathode ray tube, and there is no need to use the conventionally used coaxial button. We will describe a thick film resistor for zero-order i-voltage partial pressure, which can omit the conventional cable distribution root in the pipe and facilitates assembly work.

Thick film resistor is the 1st W! As shown in FIG. J and FIG.
a) - (30d) It has a structure formed by wo. The conditions required for the material of the resistor fiη that is incorporated and used inside this type of cathode ray tube are (II,
1liiiik, (2), less vaporization and i31% sputtering, (41, less reduction in resistance value, etc.). An important problem is the reduction in the degree of vacuum due to the release of gas due to the frit seals and high temperatures during knocking.

In the frit sealing process, heating is performed at about 430 t:', but it is necessary to generate as little gas as possible due to this heating. In the advanced knocking process, after the assembly of the electron gun is completed, a high voltage pulse of 50 to 60 KV, which is 2 to 3 times the rated voltage, is applied between the convergence electrode and the terminal bin to separate each grid G, ~G.

By causing a discharge between the edges of the cylindrical grid, the fine ridges that have formed unnecessarily are removed.The high voltage mentioned above is also applied to the resistor a7+, and therefore The resistor aD has its resistance 1[R
Extremely high heat is generated in L2R due to the current and current. It is necessary to prevent the resistor a9 from changing in quality due to this heat, changing the resistance wLR, or releasing gas.The resistance value R is selected to be 300 to 1000 J, but its stability is difficult. Vertical is required. Another important problem is that sputtering occurs between the patterns of the resistor an due to creeping discharge caused by the high electric field due to knocking, which changes the resistance value R, and that the sputtered material is harmful to the electron gun. It is necessary to prevent this from happening because it does not affect the shadow meeting.

In order to practically satisfy the above-mentioned requirements, in this example, RLJO2-glass is used as the material of the resistor (171).For example, silicic acid glass is used as a binder, and the material is made of RLJO2-glass. A paste is used in which TI, Al2O, and other additives are added, and an organic binder such as ethyl cellulose is mixed with a BOA-based solvent and pressed to form a paste.
A material made of alumina is used. On this substrate, a 02-glass thread paste is formed in a zigzag or wavy shape as shown in FIGS. 1m and 2 by screen printing. Next, by firing at 750 to 850C for 40 to 60 minutes, a resistor an can be obtained. In addition, Ru
O2-glass system. The film thickness of the resistor 071 after firing is 10 to 15 μm.

Next, the electrodes (30a) to (30d) will be described.

Generally, the electrode material for this type of thick film resistor is the resistor α9.
As in the case of (11 to (4)), the conditional force S described in (4) is required. In this example, a material with a resistance ratio higher than that of the resistor Q71 and a low sheet resistance of l/N is used as the electrode material. 4A and 4B show a first embodiment of a thick film resistor, and the manufacturing method thereof will be described below.

First, alumina-based @ 051 ic R55O2-glass thread paste was applied by screen printing, and the electrodes (3
(Im) to (3 (Jd)) are formed into a predetermined shape. The glass paste is removed.Next) luo 2-A glass-based paste with a high sheet resistance is applied between each electrode ζζ in a wave shape as shown in the figure. A resistor aη is formed. In this case, each electrode (
Guard patterns (31g) to (31f) are provided such that mutually opposing edges of 30a) to 30d are slightly covered.

Next, the resistors shown in FIG. 4A and B can be obtained by firing the base tIi (151) on which the electrodes and resistors are formed.
The film thickness of 30d) is approximately 10 μm.

In this resistor, a low resistance value of voltage @(30a) to (3[
Jd) with a high resistance guard pattern (31 m
) to (61f), the arc caused by the discharge during knocking concentrates on the electrode and becomes thicker, making it possible to suppress sputtering. Incidentally, as shown in FIG. 5 as an example of the turtle 2, each of the electric currents Q (30m) to (30d) may be entirely covered with a resistor (+71).

In that case, the contact resistance increases somewhat, but since the film is thin, there is no compensating upper layer.

Figures 6A and 6B show the sixth practical example.
(15+ (1)1t & (30a) ~(5CI
By providing a glass layer on the surface including d) and the resistor an, changes in resistance value due to gas release and sputtering are prevented. The glass layer (total) is -1 silicic acid glass with Aj20. A glass paste containing about 10 to 40,916 fine powders is used. - For example, a mixture of an organic binder and a solvent at a strength of 10 to 20% is applied by screen printing.

At this time, in order to increase the film thickness, 50 to 120 mesh (
Using a screen with a thickness of 200 to 600 μm,
Print in two or three layers. Next 550-650
Bake for 20 to 60 minutes at C to obtain a film thickness of 200 to 4005 m.
o httos powder to obtain one glass layer of three mechanical! It is mixed for the purpose of increasing the iIi & ◎In other words, when the thickness of the glass layer 04 is increased, black tends to be formed due to external force, so it is mixed to prevent this. j11
The effect of making the tensile modulus close to the I#ms number of the alumina substrate (151) can also be enjoyed.

In addition, in Figure 6, no guide pattern is provided for the electrodes (30m) to (30d), but the resistor pattern in Figure 5 or Figure 6 is also rubbed to form the glass layer (2). good. 50 to 100 of the top layer of the gas layer O7
sn portion, )J20. OA/20. If the resistor 1 is mixed in, the withstand voltage will drop slightly, but by doing as described above, the withstand voltage can be increased while suppressing the change in the resistor 1.

By using the above-mentioned thick film resistor including the glass layer, it is possible to greatly reduce the resistance change caused by sputtering due to discharge between the patterns of the resistor (171) at the time of knocking. It cannot be said that the problem of resistance value change caused by knocking [4] has been sufficiently improved. Embodiments of the invention will be described with reference to the drawings.

The author, #U, discovered that one of the other causes of the resistance value change of the resistor aD due to knocking is the discharge between the resistor (17+) and the grid.
In the case of the figure, since grid G, is connected to G,
When a high voltage pulse of #c 60 KV is applied during knocking, G also becomes approximately 60 KV. On the other hand, the resistor (171
The portion facing g') and o is close to the ground side and therefore has a low potential. Therefore, the potential difference between this portion and G increases, and a discharge occurs between this portion.

This discharge current I flows to ground through a portion (17a) of the resistor aη as shown in FIG. This discharge current I causes a change in the resistance value of the above-mentioned portion (17m) of the resistor (17). Such a phenomenon is particularly likely to occur in mIIIA wire tubes with small tube diameters.

The present invention is designed to directly release the discharge current (1) to the ground (-), and an embodiment thereof is shown in FIGS. 8 and 9.

In the present invention, as shown in FIG. 48, a second resistor is provided on the surface of the glass layer. This resistor is made of the same components as the resistor 071, and is formed with a predetermined width along the longitudinal direction of the insulating substrate Q5 as shown in 1, and has one end portion il! Connected to Jishogame et al. (30d),
The other end is grid 0. (not shown)
has been extended.

The pattern of the resistor (17) may of course be the one shown in FIGS. 4 to 6 described above, but it may also be the pattern shown in FIG.

In the case of Figure 9, the electrode (30c) is connected to another resistor (17).
b) It is connected to the electrode (30 heat) via. In this case, the electrode (30a) becomes an anode potential, and the electric potential 41 (3
0c) becomes the convergence potential. II in Figure 8!
The example uses a resistor formed with the pattern shown in FIG. 9 above. In this case, the dimensions of the insulating substrate a9 are, for example, width 9m, length 821III, and thickness 0.8cm, and the dimensions of the resistor (total) are width 61W11 length 25-1 thickness 10~15- . The glass layer (1) is formed to have a thickness of, for example, 500 μm, and the resistance value of the resistor 07) is, for example, V1600 MΩ.

According to the above configuration, the electrode (30 m) (3
Even if a high voltage is applied between (Jd) and a discharge occurs between the grid G5 and the grid G5, the discharge torque fiI flows through the second resistor (to) to the straight hard ground as shown in 10th. . In other words, the resistor an acts as a kind of lightning rod to protect the resistor an.

The results of an experiment using a SEP resistor showed that when the resistor was not used, the resistance value decreased by 100MΩ after knocking compared to the resistance value of 600MΩ. When the body was exposed, the resistance value decreased by about 0 to 2 MΩ. Also, the resistor (length is 25~
The effect hardly changed within the range of 3ScW&. Furthermore, the effect was less observed when the width of the resistor can was 6-inches than when it was 4inches.

In addition, if the resistor element is not provided, when the surface of the glass layer 0'A is charged up and becomes a high potential, a discharge will occur between it and the resistor element (7), and at this time the glass layer (A) will be destroyed. There is a risk that In the present invention, such a problem does not occur because the surfaces of the glass layers are always kept at the ground potential ζζ by the resistor.

As described above, the present invention is applicable to tf#! In a resistor that is used by being incorporated into a cathode ray tube as shown in Figures 1a14 and 2, and in which a glass layer is formed on the surface including the resistor on an insulating substrate, the surface of the glass layer and one end thereof are This relates to a voltage dividing resistor in an electron gun umbrella using a second resistor that is grounded.

Therefore, according to the present invention, it is possible to obtain a thick film resistor that is more stable against high temperatures and high pressures ζ caused by knocking or the like during the manufacturing process of cathode ray tubes and has a high resistance value accuracy.

[Brief explanation of the drawing]

Figure 1 is a perspective view showing an example of how the resistor is used, Figure 2 is a circuit diagram showing voltage division from the resistor to the electrodes of the electron gun, and Figure 3 is a schematic side view of the neck of the cathode ray tube. cross section,
4th Fj! JA%B is the first resistor to which the present invention can be applied.
Fig. 5 is a cross-sectional thin view showing the second embodiment, No. 68tJA,B is a plan view and cross-sectional side view showing the third embodiment, Fig. 7 The figure shows the above resistor and grid G. Figure 8 is a schematic diagram showing the relationship between This is a schematic diagram showing the relationship between the invention resistor and the grid G.In the symbols used in the drawing, (11......Electron gun a...
・・・・・・・・・・・・Insulating substrate (171...
・・・・・・・・・Resistor G, ~G5・・・・・・
Grid c......Glass layer a1...
.....This is the second resistor. Attorney Masaru Ueya (Voluntary) Procedural Amendment Written on February 4, 1981 Mr. Commissioner of the Japan Patent Office 1 Indication of the case Showa year Patent Application No. 2015?9 No. 6 Relationship to the case Patent applicant Tokyo Parts Co., Ltd. Kitashin 6-chome, No. 7 (218) Sony Corporation 6, Number of inventions increased by amendment (1), page 14, line 8 r (30a) J changed to "
30(0)” and “(30C)” to [30(1)
Correct to J. (2), Same #! On page 15, line 8, “Taku” is corrected to “■” ◎(3), on the same page, line 13, 1r type (7)” is changed to “type” (171J)
Correct the above.

Claims (1)

[Claims] A first resistor is formed on the surface of the insulating substrate along the longitudinal direction, and the insulating substrate is formed as a part of the electron gun structure in the direction in which the plurality of electrodes constituting the electron gun structure are arranged and in the longitudinal direction. are arranged so that they are substantially parallel to each other, one end of the first resistor is held at the anode voltage, and the other end is held at a sufficiently low voltage. A resistor configured such that a voltage divided at a predetermined position is supplied to a predetermined electrical connection of the electron gun integrally, and further comprising a glass layer formed on a surface of the insulating substrate including the first resistor. In the container, a resistor of 2 is formed along the longitudinal direction on the surface of the glass field, and -I+1 of the resistor of @2 is formed.
A voltage dividing resistor in an electron gun assembly, characterized in that a resistor j11 is connected to the low voltage hook part of the resistor j11.