JPS58100399A - Neutral particle incident device - Google Patents

Neutral particle incident device

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Publication number
JPS58100399A
JPS58100399A JP56196831A JP19683181A JPS58100399A JP S58100399 A JPS58100399 A JP S58100399A JP 56196831 A JP56196831 A JP 56196831A JP 19683181 A JP19683181 A JP 19683181A JP S58100399 A JPS58100399 A JP S58100399A
Authority
JP
Japan
Prior art keywords
magnetic
magnetic shield
shield
permeability
magnetic permeability
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56196831A
Other languages
Japanese (ja)
Inventor
磯部 昭二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56196831A priority Critical patent/JPS58100399A/en
Publication of JPS58100399A publication Critical patent/JPS58100399A/en
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 ”本発明は、核融合装置の追加加熱を行なう中性粒子入
射装置に係シ、特にイオノ源と中性化セルt−接続する
iI続フフンジの構造に関する4のである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a neutral particle injection device that performs additional heating of a nuclear fusion device, and in particular relates to the structure of an II series fin that connects an ion source and a neutralization cell. .

核融合装置では、中性粒子入射装置によるプラズマの追
加加熱を必要とする。従来の中性粒子入射装置は第1図
に示したような概略構造を有している。即ち、イオン源
グッズマml内にてフイフメ/ト2の熱電子により希ガ
スがイオノ化され且つプラズマ化される。このプラズマ
化されたイオンはイオン加速電#A3によシ取出され中
性化セル4内に入る。この中性化セル4よりイオンは中
性粒子となシ、核融合実験装置本体5のプラズマ6内に
入射される。なお、イオン源グッズマIllにはプラズ
マ室ガス尋人部7が接続されておシ、また中性化セル4
には中性化セルガス導入部8が接続されている。なお、
中性化セル4は真空−/夕9に収納され、この真空−ン
ク9の先端は核融合貢41iIti&置本体5にiI!
続されている。しかしこのような構成の中性粒子入射装
置では、中性化セル4とイオン源プフズマ!i11とに
磁気シールドがな構えめ、実験装置本体5の中のプクズ
マ6によ〕生ずるm洩磁場1Gによシ、粒子は中性化上
ル4内においてとの1iAJaの影響を受けて破−の如
く−がる。
Fusion devices require additional heating of the plasma by a neutral particle injection device. A conventional neutral particle injection device has a schematic structure as shown in FIG. That is, the rare gas is ionized and turned into plasma by thermionic electrons of the fifmet/to 2 in the ion source Goods Maml. This plasma ion is extracted by the ion accelerating electric current #A3 and enters the neutralization cell 4. From this neutralization cell 4, ions are converted into neutral particles and enter the plasma 6 of the fusion experimental device main body 5. In addition, a plasma chamber gas station 7 is connected to the ion source goods master Ill, and a neutralization cell 4 is also connected.
A neutralized cell gas introduction section 8 is connected to the . In addition,
The neutralization cell 4 is housed in a vacuum tank 9, and the tip of this vacuum tank 9 is placed in the fusion tank 41iIti&iI!
It is continued. However, in a neutral particle injection device with such a configuration, the neutralization cell 4 and the ion source Pfusma! A magnetic shield is set up between i11 and Pukuzma 6 in the experimental apparatus main body 5. Due to the leakage magnetic field 1G generated by the Pukuzuma 6 inside the main body 5 of the experimental device, the particles are destroyed in the neutralization top 4 under the influence of 1iAJa. Like-garu.

このa−の影響を防止するため、従来の中性粒子入射装
置には、j1g2図に示す如く、中性化セル4の嶌gK
m気シールド11を設け、壜九イオン源グフズマ富lの
周[C!気シールド13を設けて−る。この磁気シール
ド11.11によシ、漏洩磁場10の影響を防止し、中
性粒子は矢印13の如く真直ぐに核融合実験装置本体5
に入射される。
In order to prevent the influence of this a-, in the conventional neutral particle injection device, as shown in Fig.
Set up a m air shield 11, and use the surroundings of the nine ion source Gufusumafu l [C! An air shield 13 is provided. This magnetic shield 11.11 prevents the influence of the leakage magnetic field 10, and the neutral particles are directed straight to the fusion experimental device main body 5 as shown by the arrow 13.
is incident on the

s3図は、上ml磁気シールド11.l!のI#細梼造
を示すものである。a気シールド11は普通4磁率の磁
気シールド14の内−に高導磁率の磁気シールド15が
配設された二重構造を有し、また、磁気シールド12も
、普通導磁率のdfiシールド16の内側に尚導磁率の
磁気シールド17が配設された二重綱造倉有して−る。
Figure s3 shows the upper ml magnetic shield 11. l! This shows the I# thin structure. The a-air shield 11 has a double structure in which a magnetic shield 15 with high magnetic permeability is disposed inside a magnetic shield 14 with a normal magnetic permeability, and the magnetic shield 12 also has a dfi shield 16 with a normal magnetic permeability. It has a double steel structure with a magnetic shield 17 of high permeability placed inside.

これらの普通導磁率の磁気シールド14.16及び高導
磁率の磁気シールド15.17は接続フランジ18にボ
ルト締めにて一定され、東にこの接続フランジ1gはボ
ルト締めにて^空タ7クフッンジ1GK#Hiされてい
る。また、t44iIA率の磁気シールド150内側に
はイオン源弁20が弁台21にょシ支持されて配tされ
、この弁台21はIII続フフンジ18の非磁性822
に堆付けである。これは弁台21が非磁性であるため、
取付部も非磁性化したもので、特に意味のあるものでは
ない。
These magnetic shields 14.16 with normal magnetic permeability and magnetic shields 15.17 with high magnetic permeability are secured by bolts to the connecting flange 18, and to the east this connecting flange 1g is bolted to the empty tank 7 flange 1GK. #It is Hi. In addition, an ion source valve 20 is disposed inside the magnetic shield 150 with a t44iIA rate, supported by a valve stand 21, and this valve stand 21 is connected to a non-magnetic 822
It is attached to. This is because the valve stand 21 is non-magnetic.
The mounting part is also non-magnetic and has no particular meaning.

ところで、普通導磁率の磁気シールドと高導磁率の磁気
シールドとが接触すると、例えば、接続フランジ18が
1枚の同一材質で構成されていたとすると、磁気シール
ド14,18,1@、17  −が接続フランジ18の
面で接触し、A4磁率のものと普通導磁率のものとが接
続フランジl$にょυ一体となる。このため、磁束が互
%/%に干渉し合い、高導磁率の磁気シールド15.1
7のMJ釆が減少することになる。
By the way, when the magnetic shield with normal magnetic permeability and the magnetic shield with high magnetic permeability come into contact, for example, if the connecting flange 18 is made of one sheet of the same material, the magnetic shields 14, 18, 1@, 17 - They come into contact with each other at the surface of the connecting flange 18, and the one with A4 magnetic permeability and the one with normal magnetic permeability become one body with the connecting flange 18. For this reason, the magnetic fluxes interfere with each other at a rate of %/%, and the magnetic shield with high magnetic permeability 15.1
7 MJ buttons will be reduced.

そこで、本′14施例では上記の欠点を防止する九め、
接続フランジI8の@造を、非磁性体23、磁性s24
及び#I磁性部22の複雑な構成としておシ、この部分
を平向的に見たのがji4図である。
Therefore, in this '14 embodiment, the ninth point is to prevent the above drawbacks.
The @ structure of the connection flange I8 is made of non-magnetic material 23 and magnetic material s24.
The #I magnetic part 22 has a complicated structure, and FIG. 4 shows a plan view of this part.

11に続フランジ18がこのような構造を有ニジている
ため、外−のfA441に率の磁気シールド15は接続
フランジ18t−−由して、中性化セル側の磁気シール
ド16に逼鯖する。また、44磁亭の磁気シールli’
16に磁性部24を絹出して中性化セル側の高4磁皐の
磁気シールド17と連結している。
Since the flange 18 following 11 has such a structure, the external magnetic shield 15 connected to fA441 is connected to the magnetic shield 16 on the neutralization cell side through the connecting flange 18t. . In addition, 44 Jitei's magnetic seal li'
A magnetic part 24 is extended from the 16 and connected to a magnetic shield 17 made of high-4 magnetic wire on the neutralization cell side.

このため、普通導磁率の磁気シールド14.15と+1
%4磁率の磁気シールド15.17との閾には非磁性体
23が入って−るため、相互に磁気的に絶llされてお
9、両者間の磁気的干渉がなく、高導磁率の磁気シール
ド1り、17の性能は維持される。
For this reason, the magnetic shield with normal magnetic permeability is 14.15 and +1
Since a non-magnetic material 23 is included in the threshold with the magnetic shield 15.17 with a magnetic permeability of %4, they are magnetically isolated from each other9, and there is no magnetic interference between the two, resulting in a magnetic shield with a high magnetic permeability. The performance of magnetic shields 1 and 17 is maintained.

δて、量続フフノジ五8、非磁性体22,23、磁性s
24のfs合は、磁気絶縁のみならず機械的にも漠く、
且つイオン源と中性化セル側との閲を真空保持しなけれ
ばならぬため、十分なる溶接、圧接及びロー付等の接合
作業が必要である。第5図は、最も高い?1llIIK
と性能を発揮した電子ビーム#l簑機によりこれらt−
軸合した状mを示し九ものである0図中符号25はビー
トの溶は込みt示すもので、非磁性体23、磁性部24
、#I!繊性鄭22を完全に結合している。このビート
26は礁めて薄く、非磁性体23、非磁性部28の非磁
性特性を全く劣化させない。
δ, quantity continuous 58, non-magnetic material 22, 23, magnetic material s
The fs match of 24 is vague not only in terms of magnetic insulation but also mechanically.
In addition, since the connection between the ion source and the neutralization cell must be maintained in a vacuum, sufficient joining work such as welding, pressure welding, brazing, etc. is required. Is Figure 5 the highest? 1llIIK
These T-
The number 25 in the figure indicates the melting of the beet, and the non-magnetic material 23 and the magnetic part 24.
, #I! The fibers 22 are completely combined. This beat 26 is extremely thin and does not deteriorate the non-magnetic properties of the non-magnetic body 23 and the non-magnetic portion 28 at all.

このように、電子ビームS績砿によるS摘が上記のよう
な構成物を結合するには一一無二の接合法ではな−かと
考えられるが、周知の如く、電子ビームfa接は真空中
においてしか溶接することができないため、もし上記の
ような18mフランジ18が真空容器中に入らない場合
紘緒合することは不可能となる欠点がある。また、接続
フランジ18、非磁性体23、磁性s24、非磁性部2
2というような複雑な形状のものを僑めて僅かな閾ll
[を持って組合わせる際には、この間隙が電子溶接ビー
ムの幅よシ広iと、ビームはこO関−七通ることとなり
、#Im!することかで亀なくなる欠点がある。更に、
構造が複雑なため、溶接の加工工数が礁めて多く、非常
に手間と時間がかかるという欠点もある。
In this way, it is thought that S welding using an electron beam S welding is the unique bonding method for joining the above-mentioned components, but as is well known, electron beam welding is performed in a vacuum. Since welding can only be performed in the vacuum container, there is a drawback that if the 18 m flange 18 described above does not fit into the vacuum vessel, it will be impossible to weld it together. In addition, the connection flange 18, the non-magnetic body 23, the magnetic s24, the non-magnetic part 2
A small threshold for complex shapes such as 2
When combining with [, this gap is wider than the width of the electron welding beam i, and the beam passes through this point, #Im! There is a drawback that it becomes boring depending on what you do. Furthermore,
Since the structure is complex, the welding process requires a large number of man-hours, and it also has the disadvantage of being extremely time-consuming and labor-intensive.

本発明の目的は、上記の欠点を解消し、イオン−側磁気
シールドと中性化セル@磁気シールドとに4i1する接
続フランジの構造を簡単とし、且つ趣エエ畝を低減した
中性粒子入射装置を提供することにるる。
The object of the present invention is to provide a neutral particle injection device that eliminates the above-mentioned drawbacks, simplifies the structure of the connecting flange that connects the ion-side magnetic shield and the neutralization cell @magnetic shield, and reduces the appearance of ridges. It depends on providing.

本発明は、同一材料から成る接続フランジの中央部にあ
けられた窓部の周囲にllE畝個の孔をあけ、この孔を
、孔内壁と所定の空隙を介して貫通すゐ導aaのボルト
によシ、イオン源側の高導磁率の磁気7−ルドと中性化
セル側の高導磁率の磁気シールドとf:接続フランジの
両面にff1L、イオン源側の普通導磁率の磁気シール
ドと中性化セル側の普通導磁率の磁気シールドとt−、
!I続フラッジの前記孔外周部両面にボルトによシ締結
することによって、上記目的を構成する。
In the present invention, a number of holes are formed around a window formed in the center of a connecting flange made of the same material, and a conductive AA bolt is inserted through the holes through a predetermined gap between the inner wall of the hole. Also, a magnetic shield with high magnetic permeability on the ion source side, a magnetic shield with high magnetic permeability on the neutralization cell side, and ff1L on both sides of the connection flange, and a magnetic shield with normal magnetic permeability on the ion source side. A magnetic shield of normal magnetic permeability on the neutralization cell side and t-,
! The above object is achieved by fastening bolts to both sides of the outer periphery of the hole of the I-connected flage.

以下本発明の中性粒子入射装置の一実施例を従来例と同
部品は同符号を用いて第61乃引1図によ〕説明する。
An embodiment of the neutral particle injection device of the present invention will be described below with reference to FIGS.

第6図は本発明の要部であるイオンg*の磁気シールド
と中性化セル側の磁気シールドとを締結する*aミツ2
ンジ構造を示す一実施例である。
Figure 6 shows *a technology 2 for connecting the magnetic shield for ions g* and the magnetic shield on the neutralization cell side, which is the main part of the present invention.
This is an example showing a hinge structure.

イオン源側の高導磁率の磁気シールド15と中性化セル
側の高導磁率の磁気シールド17とは、接続フランジ1
8の中央窓1126の外周部にあけられた孔27を貞逸
する導磁性のボルト28によシ、接続フランジ18の両
面に##!Iされてiる。イオン源側の普通導磁率の磁
気シールド14と中性化セル側の普通導磁率の磁気シー
ルド16とは、接続フランジ18の前記孔27の外周部
両面に直接ボルトにより締結されて−る。第7glは前
記接続フランジ18の構造を示す平面図で、同一材質か
ら成るli!続フランジ18の中央部Khh窓部26の
周Hに複数個の孔27が6けられておシ、この孔に27
前記ボルト28が貫通して−る。他の構成は従来例と同
様であるためat明は省略する。
The high permeability magnetic shield 15 on the ion source side and the high permeability magnetic shield 17 on the neutralization cell side are connected to the connecting flange 1.
##! ##! I've been treated. The magnetic shield 14 of normal magnetic permeability on the ion source side and the magnetic shield 16 of normal magnetic permeability on the neutralization cell side are directly fastened to both sides of the outer periphery of the hole 27 of the connection flange 18 by bolts. 7gl is a plan view showing the structure of the connection flange 18, which is made of the same material as li! A plurality of holes 27 are provided on the circumference H of the center Khh window portion 26 of the connecting flange 18, and six holes 27 are provided in the holes.
The bolt 28 passes through it. Since the other configurations are the same as those of the conventional example, ``at'' will be omitted.

第8図扛箒6図で示した孔27とボルト26部分の−g
岨面図である。ボルト28には、その両端部に磁気シー
ルド15と!I続フク/ジ18及び磁気シールド17と
接続フランジ18との閾の磁気絶縁を行なうために、非
磁性材29.30が取付けられており、ボルト28の頭
部が直**mフラ/ジ18に接触しなiようにしである
。ボルト28は非磁性材29と30を接続フランジ18
の両面に締付け、非dlt性材30と接続フランジ18
及び非磁性#31と接続フランジ−18との関には、真
空を保持するパラ中7グ31が挿入響れている。
Figure 8 -g of the hole 27 and bolt 26 shown in Figure 6
This is a map of Cape. The bolt 28 has a magnetic shield 15 on both ends! Non-magnetic material 29.30 is attached to provide magnetic insulation between the I connection hook/ji 18 and the magnetic shield 17 and the connection flange 18, and the head of the bolt 28 is directly connected to the **m flange/ji. Please do not touch 18. Bolts 28 connect non-magnetic materials 29 and 30 to flange 18
Tighten the non-DLT material 30 and the connecting flange 18 on both sides of the
A parallel medium 7-gage 31 for maintaining a vacuum is inserted between the non-magnetic #31 and the connecting flange 18.

このパラヤング31は、イオン#A@と中法化セル餉と
の間の真空を保つために挿入される。tた、磁気シール
ド1Bとボルト28及び磁気シールド17とボルト28
との磁気導通t−^くするために、ボルト28011部
と、磁気シール口1及び磁気シールド17との閾に間隙
を生じないような磁性材32が挿入され、磁気シールド
Isと磁気シールド17とがボルト28に介して互いに
磁気的に4通するようにしである。
This parayoung 31 is inserted to maintain a vacuum between the ion #A@ and the intermediate cell holder. t, magnetic shield 1B and bolt 28 and magnetic shield 17 and bolt 28
A magnetic material 32 that does not create a gap is inserted between the bolt 28011 and the threshold between the magnetic seal port 1 and the magnetic shield 17 in order to establish magnetic continuity between the magnetic shield Is and the magnetic shield 17. are magnetically passed through each other through bolts 28.

本夫施例によれば、接続フランジ18の患部26の周囲
にあけられた複数の孔27に、空1NIIt−介して挿
入されたボルト28により、高導磁率の磁気シールド1
5と高導磁率の磁気シールド17とを接続7ランジ1B
の両面rc#結し、且つ普通導磁率の磁気シールド14
と普通導磁率の磁気シールド16とを直接接続フランジ
18ON向にボルトによシmtiaすることにより、高
導磁率の磁気シールド15.17と普通導磁率の磁気シ
ールド14.16との磁気的絶縁をボルト28と孔27
の空一部により行ない、Ii続7フンジl$と同一材料
で構成し、且つその窓部の周一に複数の孔27をあける
だけの簡単な構造とする効果があり、接続フランジ18
の加エエaを著しく低減させ、この部分の手間及び時間
を減らして原価を低減させる効果がある。tた、W!続
フツノジ18の加工に電子ビームS*を用−ることがな
く、この溶接に関するトラブルを皆無とする効果がある
According to the present embodiment, the high magnetic permeability magnetic shield 1
5 and high magnetic conductivity magnetic shield 17 are connected 7 langes 1B
Magnetic shield 14 with normal magnetic permeability and RC # bonded on both sides of
By bolting the magnetic shield 16 of normal magnetic permeability and the magnetic shield 16 of normal magnetic permeability directly in the direction of the connecting flange 18 ON, magnetic insulation between the magnetic shield 15.17 of high magnetic permeability and the magnetic shield 14.16 of normal magnetic permeability is achieved. Bolt 28 and hole 27
It is made of the same material as the connecting flange 18 and is made of the same material as the connecting flange 18.
This has the effect of significantly reducing the processing air a, reducing the labor and time involved in this part, and reducing the cost. T-W! The electron beam S* is not used to process the connecting joint 18, which has the effect of eliminating any troubles related to welding.

以上記述した如く本発明の中性粒子入射装置によれば、
イオン5its磁気シールドと中性化セル側磁気シール
ドとをHfl!tするWI絖ツツノジの構造を簡単とし
、且つ加工工数を低減することがで龜る。
As described above, according to the neutral particle injection device of the present invention,
Hfl! Ion 5its magnetic shield and neutralization cell side magnetic shield! This makes it possible to simplify the structure of the WI thread and reduce the number of processing steps.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の中性粒子入射装置の概略構成図、嬉2図
は第1図の中性粒子入射装置に磁気シーにドtaした場
合を示す概略構成図、第3図は第2図で示し友afAシ
ールド部の詳IIAを示す概略断面図sea図は纂3図
で示した接続7クンジの一部平向図、ms図は744図
で示した接続フクンジの*像部分の状−を示した11!
明図、落6図は本発明の中性粒子入射#l−の要部でめ
る磁気シールド部の構成を示し九航路#面図、jI7図
は第6図で示した接続フフンジの一部平面図、籐8図は
第6図の磁気シールドt−接続するボルト部分の#細を
示すWR面図である。 l・・・グフズマ意、4・・・中性化セル、5・・・核
鯖倉夷m装置本体、14,15,16.17・・・磁気
シールド、is・・・接続フランジ、26・・・窓11
.27−・・孔、28・・・ボルト。 第1 口 第 2 図 第3 回 第4回 第5 図 3
Figure 1 is a schematic configuration diagram of a conventional neutral particle injection device, Figure 2 is a schematic configuration diagram showing the case where the neutral particle injection device in Figure 1 is magnetically attached, and Figure 3 is Figure 2. A schematic cross-sectional view showing details IIA of the afA shield part shown in .Sea figure is a partial plan view of connection 7 Kunji shown in Figure 3, and MS figure is a state of the image part of connection 7 Kunji shown in Figure 744. 11 that showed!
The clear figure and Figure 6 show the configuration of the magnetic shield part that is included in the main part of the neutral particle incident #l- of the present invention. The plan view, Figure 8, is a WR side view showing the #thinness of the bolt portion connecting the magnetic shield t in Figure 6. l...Gufsuma meaning, 4...Neutralization cell, 5...Nuclear Sabakura Yoshim device body, 14, 15, 16.17...Magnetic shield, IS...Connection flange, 26.・Window 11
.. 27-...hole, 28...bolt. 1st mouth 2nd figure 3rd 4th 5th figure 3

Claims (1)

【特許請求の範囲】[Claims] 1、 イオンを放出するイオノ源と、前記イオンを中性
粒子とする中性化セルとを、外IIVC配置される普通
導磁率の磁気シールドと内側に配置される^4磁卓の磁
気シールドとから成る二重の磁気シールドでd気的に遮
蔽し、前記中性粒子が外部磁界の影譬を受けることなく
、被−合装置のプラズマに入射される中性粒子入射装置
におφて、イオン源と中性化セルの境界部に配置される
接続7ツンジを同一材質で形成し、且つこの接続フフシ
ジの中央部に6けられた窓部の周囲に複航−の孔を設け
、鎖孔の内面と所定の空lIを介して鎖孔に挿入されク
ボルトによシ、イオンIIl側の高導磁率の磁気シール
ドと中性化セル側の高導磁率の磁気シールドとを接続フ
フ/ジの両面に締結し、イオ7源貴の普通導磁率の磁気
シールドを中性化セル側の普通導磁率の磁気シールドと
をIi絖フツンジの−ml孔の外iR部Vこ直接ボルト
によシ締結したことを特徴とする中性粒子入射装置。
1. An ion source that emits ions and a neutralization cell that uses the ions as neutral particles are connected to a magnetic shield of normal magnetic permeability placed on the outside IIVC and a magnetic shield of a ^4 magnetic table placed on the inside. In the neutral particle injection device, the neutral particles are shielded by a double magnetic shield consisting of a The connecting tube located at the boundary between the ion source and the neutralization cell is made of the same material, and a double-sided hole is provided around the six-sided window in the center of the connecting tube. A fufu/zip is inserted into the chain hole through the inner surface of the hole and a predetermined air gap, and connects the magnetic shield with high magnetic permeability on the ion II side and the magnetic shield with high magnetic permeability on the neutralization cell side. Connect the normal magnetic permeability magnetic shield of the io7 source to the normal magnetic permeability magnetic shield of the neutralization cell side with the bolts directly to the iR part V of the -ml hole of the Ii bolt. A neutral particle injection device characterized by:
JP56196831A 1981-12-09 1981-12-09 Neutral particle incident device Pending JPS58100399A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56196831A JPS58100399A (en) 1981-12-09 1981-12-09 Neutral particle incident device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56196831A JPS58100399A (en) 1981-12-09 1981-12-09 Neutral particle incident device

Publications (1)

Publication Number Publication Date
JPS58100399A true JPS58100399A (en) 1983-06-15

Family

ID=16364385

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56196831A Pending JPS58100399A (en) 1981-12-09 1981-12-09 Neutral particle incident device

Country Status (1)

Country Link
JP (1) JPS58100399A (en)

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