JPS5799747A - Light beam diffusor - Google Patents

Light beam diffusor

Info

Publication number
JPS5799747A
JPS5799747A JP55175642A JP17564280A JPS5799747A JP S5799747 A JPS5799747 A JP S5799747A JP 55175642 A JP55175642 A JP 55175642A JP 17564280 A JP17564280 A JP 17564280A JP S5799747 A JPS5799747 A JP S5799747A
Authority
JP
Japan
Prior art keywords
diffusor
laser
light beam
chip
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55175642A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6322453B2 (enExample
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55175642A priority Critical patent/JPS5799747A/ja
Publication of JPS5799747A publication Critical patent/JPS5799747A/ja
Publication of JPS6322453B2 publication Critical patent/JPS6322453B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing

Landscapes

  • Laser Beam Processing (AREA)
  • Lasers (AREA)
JP55175642A 1980-12-12 1980-12-12 Light beam diffusor Granted JPS5799747A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55175642A JPS5799747A (en) 1980-12-12 1980-12-12 Light beam diffusor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55175642A JPS5799747A (en) 1980-12-12 1980-12-12 Light beam diffusor

Publications (2)

Publication Number Publication Date
JPS5799747A true JPS5799747A (en) 1982-06-21
JPS6322453B2 JPS6322453B2 (enExample) 1988-05-12

Family

ID=15999648

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55175642A Granted JPS5799747A (en) 1980-12-12 1980-12-12 Light beam diffusor

Country Status (1)

Country Link
JP (1) JPS5799747A (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5540183A (en) * 1993-03-16 1996-07-30 Mitsubishi Denki Kabushiki Kaisha Zone-melting recrystallization of semiconductor materials
WO2006055123A1 (en) * 2004-11-12 2006-05-26 Applied Materials, Inc. Single axis light pipe for homogenizing one axis of illumination systems based on laser diodes
US7135392B1 (en) 2005-07-20 2006-11-14 Applied Materials, Inc. Thermal flux laser annealing for ion implantation of semiconductor P-N junctions
US7422988B2 (en) 2004-11-12 2008-09-09 Applied Materials, Inc. Rapid detection of imminent failure in laser thermal processing of a substrate
US7438468B2 (en) 2004-11-12 2008-10-21 Applied Materials, Inc. Multiple band pass filtering for pyrometry in laser based annealing systems
US7659187B2 (en) 2006-11-03 2010-02-09 Applied Materials, Inc. Method of forming PN junctions including a post-ion implant dynamic surface anneal process with minimum interface trap density at the gate insulator-silicon interface
US7674999B2 (en) 2006-08-23 2010-03-09 Applied Materials, Inc. Fast axis beam profile shaping by collimation lenslets for high power laser diode based annealing system
US7910499B2 (en) 2004-11-12 2011-03-22 Applied Materials, Inc. Autofocus for high power laser diode based annealing system

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4589606B2 (ja) * 2003-06-02 2010-12-01 住友重機械工業株式会社 半導体装置の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4830875A (enExample) * 1971-08-25 1973-04-23
JPS5571147A (en) * 1978-11-15 1980-05-29 Kraftwerk Union Ag Rotary electric machine rotor cooler
JPS5577147A (en) * 1978-11-24 1980-06-10 Nat Res Dev Laser light beam diffusing unit for tempering

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4830875A (enExample) * 1971-08-25 1973-04-23
JPS5571147A (en) * 1978-11-15 1980-05-29 Kraftwerk Union Ag Rotary electric machine rotor cooler
JPS5577147A (en) * 1978-11-24 1980-06-10 Nat Res Dev Laser light beam diffusing unit for tempering

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5540183A (en) * 1993-03-16 1996-07-30 Mitsubishi Denki Kabushiki Kaisha Zone-melting recrystallization of semiconductor materials
WO2006055123A1 (en) * 2004-11-12 2006-05-26 Applied Materials, Inc. Single axis light pipe for homogenizing one axis of illumination systems based on laser diodes
US7129440B2 (en) 2004-11-12 2006-10-31 Applied Materials, Inc. Single axis light pipe for homogenizing slow axis of illumination systems based on laser diodes
US7422988B2 (en) 2004-11-12 2008-09-09 Applied Materials, Inc. Rapid detection of imminent failure in laser thermal processing of a substrate
US7438468B2 (en) 2004-11-12 2008-10-21 Applied Materials, Inc. Multiple band pass filtering for pyrometry in laser based annealing systems
US7717617B2 (en) 2004-11-12 2010-05-18 Applied Materials, Inc. Multiple band pass filtering for pyrometry in laser based annealing systems
US7910499B2 (en) 2004-11-12 2011-03-22 Applied Materials, Inc. Autofocus for high power laser diode based annealing system
US8586893B2 (en) 2004-11-12 2013-11-19 Applied Materials, Inc. Rapid detection of imminent failure in optical thermal processing of a substrate
US7135392B1 (en) 2005-07-20 2006-11-14 Applied Materials, Inc. Thermal flux laser annealing for ion implantation of semiconductor P-N junctions
US7674999B2 (en) 2006-08-23 2010-03-09 Applied Materials, Inc. Fast axis beam profile shaping by collimation lenslets for high power laser diode based annealing system
US8288683B2 (en) 2006-08-23 2012-10-16 Applied Materials, Inc. Fast axis beam profile shaping for high power laser diode based annealing system
US7659187B2 (en) 2006-11-03 2010-02-09 Applied Materials, Inc. Method of forming PN junctions including a post-ion implant dynamic surface anneal process with minimum interface trap density at the gate insulator-silicon interface

Also Published As

Publication number Publication date
JPS6322453B2 (enExample) 1988-05-12

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