JPS5798840A - Devide for measuring concentration of semiconductor impurity - Google Patents

Devide for measuring concentration of semiconductor impurity

Info

Publication number
JPS5798840A
JPS5798840A JP17563380A JP17563380A JPS5798840A JP S5798840 A JPS5798840 A JP S5798840A JP 17563380 A JP17563380 A JP 17563380A JP 17563380 A JP17563380 A JP 17563380A JP S5798840 A JPS5798840 A JP S5798840A
Authority
JP
Japan
Prior art keywords
silicon wafer
optical fiber
light
emitting
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17563380A
Other languages
Japanese (ja)
Other versions
JPS6337888B2 (en
Inventor
Akira Osawa
Koichiro Honda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17563380A priority Critical patent/JPS5798840A/en
Publication of JPS5798840A publication Critical patent/JPS5798840A/en
Publication of JPS6337888B2 publication Critical patent/JPS6337888B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To simplify an optical system, by arranging optical fiber for infrared region between a light emitting laser and a silicon wafer, emitting a laser beam, and transmitting through silicon wafer. CONSTITUTION:In the measuring device, the laser light emitted from the PbSnTe semiconductor laser 1 which is enclosed in a Dewar vessel 12 is inputted to the light inputed end of the optical fiber 13 for the infrared region. In the meantime, the light emitting end of the optical fiber 13 is located as close as possible to the silicon wafer the vertically with respect to the silicon wafer, and the light is emitted to the silicon wafer. The laser beam is confined within the optical fiber during the transmission but emitted with an emitting angle of 10 deg.-20 deg. at the emitting end and tramsmitted through the silicon wafer 5. Therefore, the combination of a plurality of lenses can be omitted and the optical system can be simplified.
JP17563380A 1980-12-12 1980-12-12 Devide for measuring concentration of semiconductor impurity Granted JPS5798840A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17563380A JPS5798840A (en) 1980-12-12 1980-12-12 Devide for measuring concentration of semiconductor impurity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17563380A JPS5798840A (en) 1980-12-12 1980-12-12 Devide for measuring concentration of semiconductor impurity

Publications (2)

Publication Number Publication Date
JPS5798840A true JPS5798840A (en) 1982-06-19
JPS6337888B2 JPS6337888B2 (en) 1988-07-27

Family

ID=15999490

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17563380A Granted JPS5798840A (en) 1980-12-12 1980-12-12 Devide for measuring concentration of semiconductor impurity

Country Status (1)

Country Link
JP (1) JPS5798840A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0521564A (en) * 1991-07-12 1993-01-29 Toshiba Corp Measuring apparatus for diffusion layer depth
WO2010052854A1 (en) * 2008-11-05 2010-05-14 株式会社日立ハイテクノロジーズ Charged particle beam apparatus
JP2011517849A (en) * 2008-03-14 2011-06-16 アプライド マテリアルズ インコーポレイテッド Method for measuring dopant concentration during plasma ion implantation

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52126165A (en) * 1976-04-15 1977-10-22 Fujitsu Ltd Measurement of crystal properties
JPS53136893U (en) * 1977-04-04 1978-10-28
JPS54115061A (en) * 1978-02-28 1979-09-07 Fujitsu Ltd Inspection method of semiconductor wafer by infrared rays

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52126165A (en) * 1976-04-15 1977-10-22 Fujitsu Ltd Measurement of crystal properties
JPS53136893U (en) * 1977-04-04 1978-10-28
JPS54115061A (en) * 1978-02-28 1979-09-07 Fujitsu Ltd Inspection method of semiconductor wafer by infrared rays

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0521564A (en) * 1991-07-12 1993-01-29 Toshiba Corp Measuring apparatus for diffusion layer depth
JP2011517849A (en) * 2008-03-14 2011-06-16 アプライド マテリアルズ インコーポレイテッド Method for measuring dopant concentration during plasma ion implantation
TWI459488B (en) * 2008-03-14 2014-11-01 Applied Materials Inc Method for measuring dopant concentration during plasma ion implantation
WO2010052854A1 (en) * 2008-11-05 2010-05-14 株式会社日立ハイテクノロジーズ Charged particle beam apparatus
JPWO2010052854A1 (en) * 2008-11-05 2012-04-05 株式会社日立ハイテクノロジーズ Charged particle beam equipment
JP5190119B2 (en) * 2008-11-05 2013-04-24 株式会社日立ハイテクノロジーズ Charged particle beam equipment
US8586920B2 (en) 2008-11-05 2013-11-19 Hitachi High-Technologies Corporation Charged particle beam apparatus

Also Published As

Publication number Publication date
JPS6337888B2 (en) 1988-07-27

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