JPS5787545U - - Google Patents
Info
- Publication number
- JPS5787545U JPS5787545U JP16340080U JP16340080U JPS5787545U JP S5787545 U JPS5787545 U JP S5787545U JP 16340080 U JP16340080 U JP 16340080U JP 16340080 U JP16340080 U JP 16340080U JP S5787545 U JPS5787545 U JP S5787545U
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16340080U JPS5787545U (zh) | 1980-11-17 | 1980-11-17 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16340080U JPS5787545U (zh) | 1980-11-17 | 1980-11-17 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5787545U true JPS5787545U (zh) | 1982-05-29 |
Family
ID=29522182
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16340080U Pending JPS5787545U (zh) | 1980-11-17 | 1980-11-17 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5787545U (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63197375A (ja) * | 1987-02-12 | 1988-08-16 | Matsushita Electric Ind Co Ltd | Mos型半導体装置及びその製造方法 |
JPH01194362A (ja) * | 1988-01-29 | 1989-08-04 | Oki Electric Ind Co Ltd | 埋め込みゲート型mosfetの製造方法 |
JP2006186303A (ja) * | 2004-12-24 | 2006-07-13 | Hynix Semiconductor Inc | 非対称リセスされたゲートを有する金属酸化膜半導体電界効果トランジスタ及びその製造方法 |
JP2008166562A (ja) * | 2006-12-28 | 2008-07-17 | Elpida Memory Inc | 半導体装置及びその製造方法 |
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1980
- 1980-11-17 JP JP16340080U patent/JPS5787545U/ja active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63197375A (ja) * | 1987-02-12 | 1988-08-16 | Matsushita Electric Ind Co Ltd | Mos型半導体装置及びその製造方法 |
JPH01194362A (ja) * | 1988-01-29 | 1989-08-04 | Oki Electric Ind Co Ltd | 埋め込みゲート型mosfetの製造方法 |
JP2006186303A (ja) * | 2004-12-24 | 2006-07-13 | Hynix Semiconductor Inc | 非対称リセスされたゲートを有する金属酸化膜半導体電界効果トランジスタ及びその製造方法 |
JP2008166562A (ja) * | 2006-12-28 | 2008-07-17 | Elpida Memory Inc | 半導体装置及びその製造方法 |
JP4609814B2 (ja) * | 2006-12-28 | 2011-01-12 | エルピーダメモリ株式会社 | 半導体装置の製造方法 |