JPS5787545U - - Google Patents

Info

Publication number
JPS5787545U
JPS5787545U JP16340080U JP16340080U JPS5787545U JP S5787545 U JPS5787545 U JP S5787545U JP 16340080 U JP16340080 U JP 16340080U JP 16340080 U JP16340080 U JP 16340080U JP S5787545 U JPS5787545 U JP S5787545U
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16340080U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP16340080U priority Critical patent/JPS5787545U/ja
Publication of JPS5787545U publication Critical patent/JPS5787545U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP16340080U 1980-11-17 1980-11-17 Pending JPS5787545U (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16340080U JPS5787545U (zh) 1980-11-17 1980-11-17

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16340080U JPS5787545U (zh) 1980-11-17 1980-11-17

Publications (1)

Publication Number Publication Date
JPS5787545U true JPS5787545U (zh) 1982-05-29

Family

ID=29522182

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16340080U Pending JPS5787545U (zh) 1980-11-17 1980-11-17

Country Status (1)

Country Link
JP (1) JPS5787545U (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63197375A (ja) * 1987-02-12 1988-08-16 Matsushita Electric Ind Co Ltd Mos型半導体装置及びその製造方法
JPH01194362A (ja) * 1988-01-29 1989-08-04 Oki Electric Ind Co Ltd 埋め込みゲート型mosfetの製造方法
JP2006186303A (ja) * 2004-12-24 2006-07-13 Hynix Semiconductor Inc 非対称リセスされたゲートを有する金属酸化膜半導体電界効果トランジスタ及びその製造方法
JP2008166562A (ja) * 2006-12-28 2008-07-17 Elpida Memory Inc 半導体装置及びその製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63197375A (ja) * 1987-02-12 1988-08-16 Matsushita Electric Ind Co Ltd Mos型半導体装置及びその製造方法
JPH01194362A (ja) * 1988-01-29 1989-08-04 Oki Electric Ind Co Ltd 埋め込みゲート型mosfetの製造方法
JP2006186303A (ja) * 2004-12-24 2006-07-13 Hynix Semiconductor Inc 非対称リセスされたゲートを有する金属酸化膜半導体電界効果トランジスタ及びその製造方法
JP2008166562A (ja) * 2006-12-28 2008-07-17 Elpida Memory Inc 半導体装置及びその製造方法
JP4609814B2 (ja) * 2006-12-28 2011-01-12 エルピーダメモリ株式会社 半導体装置の製造方法

Similar Documents

Publication Publication Date Title
FR2476954B1 (zh)
FR2476236B1 (zh)
FR2477401B1 (zh)
FR2473914B3 (zh)
FR2473318B1 (zh)
FR2477052B1 (zh)
FR2475572B1 (zh)
FR2476896B1 (zh)
FR2477129B1 (zh)
DE3048540C2 (zh)
DE3113795C2 (zh)
DE3150355C2 (zh)
FR2475739B1 (zh)
DE3118361C2 (zh)
FR2473266B1 (zh)
FR2473401B1 (zh)
FR2474196B1 (zh)
FR2473886B1 (zh)
FR2474217B1 (zh)
FR2476985B1 (zh)
FR2473188B1 (zh)
FR2476393B1 (zh)
FR2475805B1 (zh)
CH636745GA3 (zh)
FR2473282B3 (zh)