JPS5787127A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5787127A JPS5787127A JP16356180A JP16356180A JPS5787127A JP S5787127 A JPS5787127 A JP S5787127A JP 16356180 A JP16356180 A JP 16356180A JP 16356180 A JP16356180 A JP 16356180A JP S5787127 A JPS5787127 A JP S5787127A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- semiconductor device
- residue
- layer
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910018125 Al-Si Inorganic materials 0.000 abstract 2
- 229910018520 Al—Si Inorganic materials 0.000 abstract 2
- 229910018594 Si-Cu Inorganic materials 0.000 abstract 2
- 229910008465 Si—Cu Inorganic materials 0.000 abstract 2
- 229910045601 alloy Inorganic materials 0.000 abstract 2
- 239000000956 alloy Substances 0.000 abstract 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 abstract 1
- 229910021592 Copper(II) chloride Inorganic materials 0.000 abstract 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To obtain a circuit pattern of Al-Si-Cu alloy by providing Cu circuit pattern on a semiconductor substrate with the same pattern of Al-Si laminated on the top of it and heat treated without leaving any residue. CONSTITUTION:A Cu circuit layer 4 is formed on a semiconductor device. After spattering an Al-Si layer over it, the same circuit is patterned by plasma etching. Al-Si-Cu alloy layer 6 is made by heat treatment which leaves no residue of reacted product of etching gas and resist or chloride such as CuCl2. The circuit is formed on the surface free of corrosion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16356180A JPS5787127A (en) | 1980-11-20 | 1980-11-20 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16356180A JPS5787127A (en) | 1980-11-20 | 1980-11-20 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5787127A true JPS5787127A (en) | 1982-05-31 |
Family
ID=15776236
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16356180A Pending JPS5787127A (en) | 1980-11-20 | 1980-11-20 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5787127A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0472804A2 (en) * | 1990-08-01 | 1992-03-04 | International Business Machines Corporation | Copper-semiconductor compounds capable of being produced at room temperature |
-
1980
- 1980-11-20 JP JP16356180A patent/JPS5787127A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0472804A2 (en) * | 1990-08-01 | 1992-03-04 | International Business Machines Corporation | Copper-semiconductor compounds capable of being produced at room temperature |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR970072118A (en) | Plasma treatment method and apparatus | |
| JPS5787127A (en) | Manufacture of semiconductor device | |
| JPS5248468A (en) | Process for production of semiconductor device | |
| JPS5623752A (en) | Manufacture of semiconductor device | |
| JPS56148846A (en) | Manufacture of circuit pattern | |
| JPS5785246A (en) | Semiconductor device | |
| JPS5787126A (en) | Manufacture of semiconductor device | |
| JPS60111450A (en) | Semiconductor integrated circuit device | |
| JPS5561038A (en) | Manufacture of semiconductor device | |
| JPS57162350A (en) | Forming method for wiring | |
| JPS52113162A (en) | Preparation of semiconductor device | |
| JPS5779648A (en) | Multilayer wiring of semiconductor device | |
| JPS5219297A (en) | Method of manufacturing a metal film resistor | |
| JPS5726431A (en) | Forming method for electrode and wiring layer of semiconductor device | |
| JPS5493970A (en) | Patttern forming method of multi-layer metallic thin film | |
| JPS57201026A (en) | Manufacture of semiconductor device | |
| JPS56114355A (en) | Manufacture of semiconductor device | |
| JPS51123086A (en) | Semicanductor device and its production process | |
| JPS57159044A (en) | Semiconductor device | |
| JPS5435690A (en) | Manufacture of semiconductor device of multilayer wiring type | |
| Vossen | Plasma Processes in Semiconductor Device Fabrication | |
| JPS5331966A (en) | Production of semiconductor device | |
| JPS5497385A (en) | Manufacture of semiconductor device | |
| JPS6412554A (en) | Manufacture of semiconductor device | |
| JPS55107781A (en) | Etching method for metal film |